HWD4558M [ETC]
DUAL OPERATIONAL AMPLIFIERS; 双运算放大器型号: | HWD4558M |
厂家: | ETC |
描述: | DUAL OPERATIONAL AMPLIFIERS |
文件: | 总8页 (文件大小:279K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Data Sheet
Chengdu Sino Microelectronics System Co.,Ltd.
DUAL OPERATIONAL AMPLIFIERS
General Description
HWD4558
Features
The HWD4558 consists of two high performance opera-
tional amplifiers. The IC features high gain, high input
resistance, excellent channel separation, wide range of
operating voltage and internal frequency compensa-
tion. It is specifically suitable for applications in differ-
ential-in, differential-out as well as in potential-metric
amplifiers and where gain and phase matched channels
are mandatory. The HWD4558 contains ± 18Vmaximum
power supply voltage.
·
Internal frequency compensation
·
·
·
·
·
Large DC voltage gain with 100 dB typical
High input resistance with 5MΩ typical
Low input noise voltage with 10nV/
HZ
Maximum power supply voltages: ± 18V
Compatible with NJM 4558
Applications
The HWD558 is available in DIP-8 or SOIC-8 package.
·
·
Audio AC-3 decoded system
Audio amplifier
Pin Configuration
SOIC-8/DIP-8
OUTPUT 1
INPUT 1-
INPUT 1+
1
2
3
4
8
7
6
5
V
CC
OUTPUT 2
INPUT 2-
INPUT 2+
V
EE
SOIC-8
DIP-8
Top View
Figure 2. Pin Configuration of HWD4558
Figure 1. Package Types of HWD4558
Functional Block Diagram
3.1 KΩ
VCC
- Input
150
Ω
+ Input
25
25
Ω
Ω
Output
10pF
87pF
4.2 KΩ
7.1
KΩ
7.1 KΩ
480
Ω
36 KΩ
VEE
Figure 3. Representative Schematic Diagram of HWD4558 (Each amplifier)
Issue Date: Jan. 2003
Rev.1.0
1
Data Sheet
Chengdu Sino Microelectronics System Co.,Ltd.
DUAL OPERATIONAL AMPLIFIERS
Ordering Information
HWD4558
Package
SOIC-8
DIP-8
Temperature Range
Part Number
HWD4558M
HWD4558P
Marking ID
4558M
HWD4558P
Packing Type
Tube, Reel
Tube
-40 to 85oC
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
V
V
V
V
+ 18
CC
EE
ID
IC
V
Power Supply Voltage
- 18
Differential Input Voltage
Input Voltage
± 30
± 15
V
V
DIP
SOIC
500
800
mW
Power Dissipation
P
D
o
Operating Temperature Range
Storage Temperature Range
T
-40 to 85
OP
C
o
T
-40 to 125
STG
C
Note: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the
device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those indicated under "Recommended Operation Ratings" is not implied. Exposure to "Absolute Maximum Rat-
ings" for extended periods may affect device reliability.
Recommended Operation Ratings
Parameter
Min.
Max.
Unit
Supply Voltage
± 4
± 18
V
Issue Date: Jan. 2003
Rev.1.0
2
Data Sheet
Chengdu Sino Microelectronics System Co.,Ltd.
DUAL OPERATIONAL AMPLIFIERS
HWD4558
Electrical Characteristics
Operating Conditions: VCC = +15V, VEE = - 15V, TA= 25oC unless otherwise specified.
Parameter
Input Offset Voltage
Input Bias Current
Conditions
Min.
-
-
Typ.
0.5
25
Max.
6
250
Unit
mV
nA
VCM = 0V
CM = 0V
Input Offset Current
Input Resistance
V
-
2.5
5
100
-
nA
0.3
MΩ
RL = ∞, Over full temperature
range
Supply Current
-
3.3
5.7
mA
Large Signal Voltage Gain
85
80
100
92
-
-
dB
dB
RL ≥2Κ, VO = 1V to 11V
Common Mode Rejection Ratio
VCM = 0V to VCC - 15V
VCC=5V to 18V
VEE =− 5V to - 18V
Power Supply Rejection Ratio
80
95
-
dB
Source
V+ = 1V, V- = 0V
V+ = 0V, V- = 1V
RL≥2KΩ
-
-
50
50
-
-
-
mA
mA
Output Current
Sink
±10
±13
Output Voltage Swing
V
-
-
-
RL≥10KΩ
±12
±14
1.3
10
Slew Rate
-
-
V / µS
0.5
Equivalent Input Noise Voltage
Rs=50Ω, f=1KHz
nV/(HZ)
MHz
Gain Bandwidth Product
-
-
3.4
Issue Date: Jan. 2003
Rev.1.0
3
Data Sheet
Chengdu Sino Microelectronics System Co.,Ltd.
DUAL OPERATIONAL AMPLIFIERS
HWD4558
Typical Characteristics
120
30
25
20
15
10
5
VCC=15V, VEE=-15V
100
RL=2K,TA=25oC
VCC=15V,VEE=-15V,
RL=2K, TA=25oC
80
60
40
20
0
0
2x100HZ 101HZ
102HZ
103HZ
104HZ
105HZ
106HZ
101HZ
102HZ
103HZ
104HZ
105HZ
106HZ
Frequency (HZ)
Frequency (HZ)
Figure 4. Open Loop Voltage Gain vs. Frequency
Figure 5. Maximum Output Voltage Swing vs. Frequency
103
30
VCC=15V,VEE=-15V,TA=25oC
28
VCC=15V, VEE=-15V
26
24
22
20
18
16
14
12
RS=50Ω,TA=25oC
102
101
100
100HZ
101HZ
102HZ
103HZ
0.1K
1K
10K
Load Resistance (kΩ)
Frequency (HZ)
Figure 6. Maximum Output Voltage Swing
vs. Load Resistance
Figure 7. Equivalent Input Noise Voltage vs. Frequency
Issue Date: Jan. 2003
Rev.1.0
4
Data Sheet
Chengdu Sino Microelectronics System Co.,Ltd.
DUAL OPERATIONAL AMPLIFIERS
HWD4558
Typical Characteristics (Continued)
80
70
60
50
40
30
20
10
0
1.2
1.1
V
=15V
VCC=15V
VEE=-15V
VCEEC=-15V
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
-25
0
25
50
75
100
125
-25
0
25
50
75
100
125
Ambient Temperature (oC)
Ambient Temperature (oC)
Figure 8. Input Offset Voltage vs. Temperature
Figure 9. Input Bias Current vs. Temperature
Typical Application
C1 10 µF
R5 20K
R2 20K
R4 20K
R3 10K
D1
1S1588
R1 20K
VIN
HWD4558
VO=VIN
HWD4558
D2
1S1588
R6 15K
R7 6.2K
Figure 10. Typical Application of HWD4558
Issue Date: Jan. 2003
Rev.1.0
5
Data Sheet
Chengdu Sino Microelectronics System Co.,Ltd.
DUAL OPERATIONAL AMPLIFIERS
Mechanical Dimensions
HWD4558
DIP - 8
9.2±0.10
7.62±0.25
5°
6°
1.46±0.31
φ3×0.15±0.05
0.254
0.28±0.07
2.54
0.457
10.0MAX
0.13MIN
R0.75
Issue Date: Ja.n. 2003
Rev.1.0
6
Data Sheet
Chengdu Sino Microelectronics System Co.,Ltd.
DUAL OPERATIONAL AMPLIFIERS
Mechanical Dimensions (Continued)
HWD4558
SOIC - 8
0.32
4.9±0.10
D
6.00±0.20
D
20:1
φ0.8
4°±4°
1.00
3°±2°
0.42±0.09
Issue Date: Jan. 2003
Rev.1.0
7
Chengdu Sino Microelectronics System Co.,Ltd
(Http://www.csmsc.com)
Headquarters of CSMSC
Address: 2nd floor, Building D,
Science Technology
Beijing Office:
Address: Room 505, No. 6 Building,
Zijin Garden, 68 Wanquanhe
&
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Province, P.R.China
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Beijing, P.R.China
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