HRW1002B [ETC]
;
ETC 
ADE-208-241A(Z)
HRW1002B
Silicon Schottky Barrier Diode
for Rectifying
Rev. 1
Aug . 1994
Features
Pin Arrangement
• Low forward voltage drop and suitable for high
effifiency rectifying.
• Full molded fin enables easy insulation from
heat sink.
2
3
1
Ordering Information
1
2
3
Anode
Cathode
Anode
Type No.
Laser Mark
Package Code
1
2
3
HRW1002B
W1002B
TO-220FM
Absolute Maximum Ratings (Ta = 25°C) *
Item
Symbol
RRM**
I ***
Value
20
Unit
Repetitive peak reverse voltage
Average forward current
V
V
A
10
o
Non-Repetitive peak forward surge current IFSM****
75
A
Junction temperature
Storage temperature
T
125
°C
°C
j
T
-40 to +125
stg
*
Per one device
** See Fig.5
*** Square wave, Duty (1/2), Sum of two devices, See Fig.4
**** Sine wave 10msec
Electrical Characteristics (Ta = 25°C) *
Item
Symbol
VF
Min
—
Typ
—
Max
0.42
1.0
Unit
V
Test Condition
I F = 5.0 A
Forward voltage
Reverse current
ESD-capability
I R
—
—
mA
V
VR = 20 V
—
500
—
—
C=200pF
Both forward and reverse
direction 1 pulse
Thermal resistance
Rth(j-c)
—
3.0
—
°C/W
*
Per one device
HRW1002B
102
10
10-2
Pulse test
Ta=75°C
Pulse test
Ta=75°C
-3
10
Ta=25°C
1.0
-4
10
Ta=25°C
10-1
10-5
10-2
10-3
-6
10
0
20
Reverse voltage VR (V)
5
10
15
0
0.1
0.2 0.3
0.5 0.6
25
0.4
Forward voltage VF (V)
Fig.1 Forward current Vs.
Forward voltage
Fig.2 Reverse current Vs.
Reverse voltage
103
f=1MHz
Pulse test
102
10
10
40
1.0
Reverse voltage VR (V)
Fig.3 Capacitance Vs.
Reverse voltage
HRW1002B
12
10
30
25
20
15
8
6
4
2
0
10
5
I
=5A
FM
Per one device
Vout = 3V
0
0
50
125
75 100 150
25
0
50
125
75 100 150
25
Case temperature Tc ( °C)
Case temperature Tc ( °C)
Fig.5 Repetitive peak reverse voltage
Vs. Case temperature
Fig.4 Average forward current
Vs.Case temperature
Unit: mm
Package Dimensions
2.8 ± 0.2
2.5 ± 0.2
10.0 ± 0.3
7.0 ± 0.3
φ 3.2 ± 0.2
W1002B
Lot No.
1 Anode
2 Cathode
3 Anode
1.2 ± 0.2
1.4 ± 0.2
4.45 ± 0.3
2.7
0.7 ± 0.1
HITACHI Code TO-220FM
1
2 3
JEDEC Code
EIAJ Code
Weight (g)
—
—
0.5 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
1.8
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