HN1B01FDW1T1/D [ETC]
Complementary Dual General Purpose Amplifier Transistor ; 互补的双通用放大器晶体管
| 型号： | HN1B01FDW1T1/D |
| 厂家： | 
ETC |
| 描述： | Complementary Dual General Purpose Amplifier Transistor
|
| 文件： | 总8页 (文件大小：70K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HN1B01FDW1T1
Complementary Dual
General Purpose
Amplifier Transistor
PNP and NPN Surface Mount
http://onsemi.com
• High Voltage and High Current: V
= 50 V, I = 200 mA
CEO
C
• High h : h = 200X400
FE FE
(6)
(5)
(4)
Q
• Moisture Sensitivity Level: 1
• ESD Rating - Human Body Model: 3A
ESD Rating - Machine Model: C
Q
1
2
MAXIMUM RATINGS (T = 25°C)
A
Rating
Symbol
Value
60
Unit
Vdc
(1)
(2)
(3)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
(BR)CBO
(BR)CEO
(BR)EBO
V
V
50
Vdc
7.0
Vdc
4
5
6
Collector Current - Continuous
I
C
200
mAdc
3
THERMAL CHARACTERISTICS
2
1
Characteristic
Power Dissipation
Symbol
Max
380
Unit
mW
°C
SC-74
CASE 318F
STYLE 3
P
D
Junction Temperature
Storage Temperature
T
J
150
T
stg
- 55 to +150
°C
MARKING DIAGRAM
R9
M
R9 = Specific Device Code
= Date Code
M
ORDERING INFORMATION
{
Device
Package
Shipping
3000/Tape & Reel
HN1B01FDW1T1
SC-74
†The “T1” suffix refers to a 7 inch reel.
Semiconductor Components Industries, LLC, 2003
Publication Order Number:
HN1B01FDW1T1/D
May, 2003 - Rev. 1
HN1B01FDW1T1
Q1: PNP
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
-50
-60
-7.0
-
Max
Unit
Vdc
Collector-Emitter Breakdown Voltage (I = 2.0 mAdc, I = 0)
V
-
C
B
(BR)CEO
(BR)CBO
(BR)EBO
Collector-Base Breakdown Voltage (I = 10 mAdc, I = 0)
V
V
-
-
Vdc
C
E
Emitter-Base Breakdown Voltage (I = 10 mAdc, I = 0)
Vdc
E
C
Collector-Base Cutoff Current (V = 45 Vdc, I = 0)
I
I
-0.1
mAdc
CB
E
CBO
Collector-Emitter Cutoff Current
(V = 10 Vdc, I = 0)
CEO
-
-
-
-0.1
-2.0
-1.0
mAdc
mAdc
mAdc
CE
B
(V = 30 Vdc, I = 0)
CE
B
(V = 30 Vdc, I = 0, T = 80°C)
CE
B
A
DC Current Gain (Note 1)
(V = 6.0 Vdc, I = 2.0 mAdc)
h
-
FE
-200
-400
-0.3
CE
C
Collector-Emitter Saturation Voltage (I = 100 mAdc, I = 10 mAdc)
V
-0.15
Vdc
C
B
CE(sat)
Q2: NPN
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
50
60
7.0
-
Max
Unit
Vdc
Collector-Emitter Breakdown Voltage (I = 2.0 mAdc, I = 0)
V
-
-
C
B
(BR)CEO
(BR)CBO
(BR)EBO
Collector-Base Breakdown Voltage (I = 10 mAdc, I = 0)
V
V
Vdc
C
E
Emitter-Base Breakdown Voltage (I = 10 mAdc, I = 0)
-
Vdc
E
C
Collector-Base Cutoff Current (V = 45 Vdc, I = 0)
I
I
0.1
mAdc
CB
E
CBO
Collector-Emitter Cutoff Current
(V = 10 Vdc, I = 0)
CEO
-
-
-
0.1
2.0
1.0
mAdc
mAdc
mAdc
CE
B
(V = 30 Vdc, I = 0)
CE
B
(V = 30 Vdc, I = 0, T = 80°C)
CE
B
A
DC Current Gain (Note 1)
(V = 6.0 Vdc, I = 2.0 mAdc)
h
FE
-
200
400
CE
C
Collector-Emitter Saturation Voltage (I = 100 mAdc, I = 10 mAdc)
V
CE(sat)
0.15
0.25
Vdc
C
B
1. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.
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2
HN1B01FDW1T1
Typical Electrical Characteristics: PNP Transistor
-200
1000
-1.5 mA
-2.0 mA
-160
-120
-80
-1.0 mA
T = 100°C
A
25°C
-25 °C
-0.5 mA
100
I
B
= -0.2 mA
-40
T = 25°C
A
V
CE
= -1.0 V
0
10
0
-1
-2
-3
-4
-5
-6
-1
-10
-100
-1000
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
I , COLLECTOR CURRENT (mA)
C
Figure 1. Collector Saturation Region
Figure 2. DC Current Gain
1000
-1
I /I = 10
C
B
T = 100°C
A
T = 100°C
A
25°C
25°C
-25 °C
-25 °C
100
-0.1
V
CE
= -6.0 V
10
-1
-0.01
-10
-100
-1000
-1
-10
-100
-1000
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 3. DC Current Gain
Figure 4. VCE(sat) versus IC
-10
-10,000
COMMON EMITTER
= 6 V
25°C
V
CE
T = 100°C
A
-1000
-100
-10
-25 °C
-1
-1
T = 25°C
A
I /I = 10
C
B
-0.1
-0.1
-1
-10
-100
-1000
0
-0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1
, BASE-EMITTER VOLTAGE (V)
I , COLLECTOR CURRENT (mA)
V
BE
C
Figure 5. VBE(sat) versus IC
Figure 6. Base-Emitter Voltage
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3
HN1B01FDW1T1
Typical Electrical Characteristics: NPN Transistor
280
1000
6.0 mA
5.0 mA
2.0 mA
3.0 mA
240
200
160
120
80
T = 100°C
A
25°C
-25 °C
1.0 mA
100
0.5 mA
I
B
= 0.2 mA
40
0
V
CE
= 1.0 V
T = 25°C
A
10
0
1
2
3
4
5
6
1
10
100
1000
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
I , COLLECTOR CURRENT (mA)
C
Figure 7. Collector Saturation Voltage
Figure 8. DC Current Gain
1000
1
I /I = 10
C
B
T = 100°C
A
25°C
-25 °C
T = 100°C
A
25°C
100
0.1
-25 °C
V
CE
= 6.0 V
10
0.01
1
10
100
1000
1
10
100
1000
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 9. DC Current Gain
Figure 10. VCE(sat) versus IC
10
10,000
COMMON EMITTER
= 6 V
25°C
V
T = 100°C
A
CE
1000
100
10
-25 °C
1
1
T = 25°C
A
I /I = 10
C
B
0.1
0.1
1
10
100
1000
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
, BASE-EMITTER VOLTAGE (V)
1
I , COLLECTOR CURRENT (mA)
V
BE
C
Figure 11. VBE(sat) versus IC
Figure 12. Base-Emitter Voltage
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4
HN1B01FDW1T1
INFORMATION FOR USING THE SC-74 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to ensure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self-align when
subjected to a solder reflow process.
0.094
2.4
0.037
0.95
0.074
1.9
0.037
0.95
0.028
0.7
0.039
1.0
inches
mm
SC-74
SC-74 POWER DISSIPATION
The power dissipation of the SC-74 is a function of the
one can calculate the power dissipation of the device which
in this case is 380 milliwatts.
pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power
dissipation. Power dissipation for a surface mount device is
150°C - 25°C
PD =
= 380 milliwatts
329°C/W
determined by T
, the maximum rated junction
J(max)
temperature of the die, R , the thermal resistance from
the device junction to ambient, and the operating
qJA
The 329°C/W for the SC-74 package assumes the use of
the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 380 milliwatts.
There are other alternatives to achieving higher power
dissipation from the SC-74 package. Another alternative
would be to use a ceramic substrate or an aluminum core
board such as Thermal Clad . Using a board material such
as Thermal Clad, an aluminum core board, the power
dissipation can be doubled using the same footprint.
temperature, T . Using the values provided on the data
A
sheet for the SC-74 package, P can be calculated as
D
follows:
TJ(max) - TA
Rq
PD =
JA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values
into the equation for an ambient temperature T of 25°C,
A
SOLDER STENCIL GUIDELINES
Prior to placing surface mount components onto a printed
circuit board, solder paste must be applied to the pads.
Solder stencils are used to screen the optimum amount.
These stencils are typically 0.008 inches thick and may be
made of brass or stainless steel. For packages such as the
SC-59, SC-74, SC-70/SOT-323, SOD-123, SOT-23,
SOT-143, SOT-223, SO-8, SO-14, SO-16, and SMB/SMC
diode packages, the stencil opening should be the same as
the pad size or a 1:1 registration.
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HN1B01FDW1T1
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
• The soldering temperature and time should not exceed
260°C for more than 10 seconds.
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
• Always preheat the device.
• The delta temperature between the preheat and
soldering should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference should be a maximum of 10°C.
• When shifting from preheating to soldering, the
maximum temperature gradient should be 5°C or less.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used since the use of forced
cooling will increase the temperature gradient and will
result in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied
during cooling.
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
TYPICAL SOLDER HEATING PROFILE
For any given circuit board, there will be a group of
control settings that will give the desired heat pattern. The
operator must set temperatures for several heating zones
and a figure for belt speed. Taken together, these control
settings make up a heating “profile” for that particular
circuit board. On machines controlled by a computer, the
computer remembers these profiles from one operating
session to the next. Figure 13 shows a typical heating
profile for use when soldering a surface mount device to a
printed circuit board. This profile will vary among
soldering systems, but it is a good starting point. Factors
that can affect the profile include the type of soldering
system in use, density and types of components on the
board, type of solder used, and the type of board or
substrate material being used. This profile shows
temperature versus time. The line on the graph shows the
actual temperature that might be experienced on the surface
of a test board at or near a central solder joint. The two
profiles are based on a high density and a low density
board. The Vitronics SMD310 convection/infrared reflow
soldering system was used to generate this profile. The type
of solder used was 62/36/2 Tin Lead Silver with a melting
point between 177-189 °C. When this type of furnace is
used for solder reflow work, the circuit boards and solder
joints tend to heat first. The components on the board are
then heated by conduction. The circuit board, because it has
a large surface area, absorbs the thermal energy more
efficiently, then distributes this energy to the components.
Because of this effect, the main body of a component may
be up to 30 degrees cooler than the adjacent solder joints.
STEP 1
STEP 2 STEP 3
VENT HEATING
SOAK" ZONES 2 & 5 ZONES 3 & 6 ZONES 4 & 7
STEP 4
HEATING
STEP 5
HEATING
STEP 6
VENT
STEP 7
COOLING
PREHEAT
ZONE 1
RAMP"
RAMP"
SOAK"
SPIKE"
205° TO 219°C
PEAK AT
SOLDER JOINT
170°C
200°C
150°C
DESIRED CURVE FOR HIGH
MASS ASSEMBLIES
160°C
150°C
SOLDER IS LIQUID FOR
40 TO 80 SECONDS
(DEPENDING ON
140°C
100°C
MASS OF ASSEMBLY)
100°C
50°C
DESIRED CURVE FOR LOW
MASS ASSEMBLIES
TIME (3 TO 7 MINUTES TOTAL)
T
MAX
Figure 13. Typical Solder Heating Profile
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HN1B01FDW1T1
PACKAGE DIMENSIONS
SC-74
CASE 318F-05
ISSUE K
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM
LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. 318F-01, -02, -03 OBSOLETE. NEW
STANDARD 318F-04.
A
L
6
5
2
4
B
S
1
INCHES
DIM MIN MAX
MILLIMETERS
3
MIN
2.90
1.30
0.90
0.25
0.85
0.013
0.10
0.20
1.25
0
MAX
3.10
1.70
1.10
0.50
1.05
0.100
0.26
0.60
1.65
10
A
B
C
D
G
H
J
0.1142 0.1220
0.0512 0.0669
0.0354 0.0433
0.0098 0.0197
0.0335 0.0413
0.0005 0.0040
0.0040 0.0102
0.0079 0.0236
0.0493 0.0649
D
G
M
J
K
L
C
0.05 (0.002)
M
S
0
10
0.0985 0.1181
_
_
_
_
2.50
3.00
K
H
STYLE 3:
PIN 1. EMITTER 1
2. BASE 1
3. COLLECTOR 2
4. EMITTER 2
5. BASE 2
6. COLLECTOR 1
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HN1B01FDW1T1
Thermal Clad is a registered trademark of the Bergquist Company
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make
changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death
may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
Literature Fulfillment:
JAPAN: ON Semiconductor, Japan Customer Focus Center
2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051
Phone: 81-3-5773-3850
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada
Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada
Email: ONlit@hibbertco.com
ON Semiconductor Website: http://onsemi.com
For additional information, please contact your local
Sales Representative.
N. American Technical Support: 800-282-9855 Toll Free USA/Canada
HN1B01FDW1T1/D
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