HGT1S3N60B3S9A [ETC]
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 3.5A I(C) | TO-263AB ; 晶体管| IGBT | N -CHAN | 600V V（ BR ） CES | 3.5AI （ C） | TO- 263AB\n
| 型号： | HGT1S3N60B3S9A |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 3.5A I(C) | TO-263AB
|
| 文件： | 总7页 (文件大小：207K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3
Data Sheet
December 2001
7A, 600V, UFS Series N-Channel IGBTs
Features
o
The HGTD3N60B3S, HGT1S3N60B3S and HGTP3N60B3
are MOS gated high voltage switching devices combining
the best features of MOSFETs and bipolar transistors. These
devices have the high input impedance of a MOSFET and
the low on-state conduction loss of a bipolar transistor. The
much lower on-state voltage drop varies only moderately
• 7A, 600V, T = 25 C
C
• 600V Switching SOA Capability
o
• Typical Fall Time. . . . . . . . . . . . . . . . 115ns at T = 150 C
J
• Short Circuit Rating
• Low Conduction Loss
o
o
between 25 C and 150 C.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Packaging
JEDEC TO-220AB
E
C
G
COLLECTOR
(FLANGE)
Formerly Developmental Type TA49192.
Ordering Information
PART NUMBER
HGTD3N60B3S
HGT1S3N60B3S
HGTP3N60B3
PACKAGE
BRAND
G3N60B
TO-252AA
JEDEC TO-263AB
TO-263AB
TO-220AB
G3N60B3
G3N60B3
COLLECTOR
(FLANGE)
G
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252AA and TO-263AB variant in tape and reel, e.g.
HGTD3N60B3S9A.
E
Symbol
JEDEC TO-252AA
COLLECTOR
C
(FLANGE)
G
G
E
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
©2001 Fairchild Semiconductor Corporation
HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3 Rev. B
HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3
o
Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified
C
HGTD3N60B3S, HGT1S3N60B3S
HGTP3N60B3
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
600
V
CES
Collector Current Continuous
o
At T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
7.0
3.5
A
A
A
V
V
C25
o
At T = 110 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
20
CM
GES
GEM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
±20
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
o
±30
Switching Safe Operating Area at T = 150 C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
J
18A at 600V
33.3
o
Power Dissipation Total at T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
C
Power Dissipation Derating T > 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
W
D
o
o
0.27
W/ C
C
Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
100
mJ
ARV
o
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T , T
-55 to 150
260
C
J
STG
o
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
C
L
SC
SC
Short Circuit Withstand Time (Note 2) at V
Short Circuit Withstand Time (Note 2) at V
= 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t
= 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t
5
µs
µs
GE
GE
10
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
o
2. V
= 360V, T = 125 C, R = 82Ω.
J G
CE(PK)
o
Electrical Specifications
T = 25 C, Unless Otherwise Specified
C
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
-
UNITS
V
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
BV
BV
I
I
= 250µA, V
= 0V
= 0V
600
-
28
-
CES
ECS
C
GE
= 10mA, V
20
-
V
C
GE
o
I
V
= BV
CES
T
= 25 C
-
-
250
2.0
2.1
2.5
6.0
±250
-
µA
mA
V
CES
CE
C
C
C
C
o
T
T
T
= 150 C
-
o
Collector to Emitter Saturation Voltage
V
I
= I
,
= 25 C
-
1.8
2.1
5.4
-
CE(SAT)
C
C110
= 15V
V
GE
o
= 150 C
-
V
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
V
I
= 250µA, V
= V
GE
4.5
-
V
GE(TH)
C CE
I
V
= ±20V
nA
A
GES
GE
o
SSOA
T = 150 C
V
= 600V
18
-
J
CE
R
= 82Ω
G
V
= 15V
GE
L = 500µH
Gate to Emitter Plateau Voltage
On-State Gate Charge
V
I
= I
, V
C110 CE
= 0.5 BV
CES
-
-
-
-
-
-
-
-
-
7.9
18
21
18
16
105
70
66
88
-
22
25
-
V
GEP
C
C
Q
I
V
= I
,
V
= 15V
nC
nC
ns
ns
ns
ns
µJ
µJ
g(ON)
C110
= 0.5 BV
GE
GE
CE
CES
V
= 20V
o
Current Turn-On Delay Time
Current Rise Time
t
IGBT and Diode at T = 25 C
J
d(ON)I
I
= I
CE
C110
t
-
rI
V
V
R
= 0.8 BV
= 15V
CE
GE
CES
Current Turn-Off Delay Time
Current Fall Time
t
-
d(OFF)I
= 82Ω
G
t
-
fI
L = 1mH
Test Circuit (Figure 17)
Turn-On Energy
E
75
160
ON
Turn-Off Energy (Note 3)
E
OFF
©2001 Fairchild Semiconductor Corporation
HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3 Rev. B
HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3
o
Electrical Specifications
PARAMETER
T
= 25 C, Unless Otherwise Specified (Continued)
C
SYMBOL
TEST CONDITIONS
MIN
TYP
16
MAX
-
UNITS
ns
o
Current Turn-On Delay Time
Current Rise Time
t
IGBT and Diode at T = 150 C
-
-
-
-
-
-
-
d(ON)I
J
I
= I
C110
CE
t
18
-
ns
rI
V
V
= 0.8 BV
= 15V
CE
CES
Current Turn-Off Delay Time
Current Fall Time
t
GE
220
115
130
210
-
295
175
140
325
3.75
ns
d(OFF)I
R
= 82Ω
G
t
ns
fI
L = 1mH
Test Circuit (Figure 17)
Turn-On Energy
E
µJ
ON
Turn-Off Energy (Note 3)
E
µJ
OFF
o
Thermal Resistance Junction To Case
NOTE:
R
C/W
θJC
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
CE
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include losses due
to diode recovery.
Typical Performance Curves Unless Otherwise Specified
20
18
16
14
12
10
8
7
o
T
= 150 C, R = 82Ω, V = 15V, L = 500µH
GE
J
G
V
= 15V
GE
6
5
4
3
2
1
0
6
4
2
0
25
50
75
100
125
150
0
100
V
200
300
400
500
600
700
o
T
, CASE TEMPERATURE ( C)
, COLLECTOR TO EMITTER VOLTAGE (V)
C
CE
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
200
16
14
12
10
8
45
40
35
30
25
20
15
o
= 150 C, R = 82Ω, L = 1mH, V = 480V
CE
T
J
G
o
V
= 360V, R = 82Ω, T = 125 C
G J
CE
100
10
1
T
V
C
GE
o
15V
75 C
I
SC
o
75 C 10V
o
110 C 15V
o
110 C 10V
f
= 0.05/(t
+ t )
d(ON)I
MAX1
d(OFF)I
f
= (P - P )/(E
ON
+ E )
OFF
MAX2
D
C
t
SC
P
= CONDUCTION DISSIPATION
C
6
(DUTY FACTOR = 50%)
o
R
= 3.75 C/W, SEE NOTES
ØJC
4
1
2
3
4
5
6
7
8
10
11
12
13
14
15
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
V
, GATE TO EMITTER VOLTAGE (V)
GE
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
©2001 Fairchild Semiconductor Corporation
HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3 Rev. B
HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3
Typical Performance Curves Unless Otherwise Specified (Continued)
30
25
20
15
10
5
14
12
10
8
o
DUTY CYCLE <0.5%, V
= 15V
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, V
= 10V
PULSE DURATION = 250µs
GE
GE
T
= -55 C
C
C
o
T
= -55 C
C
o
T
= 150 C
o
T
= 150 C
C
6
o
T
= 25 C
C
o
4
T
= 25 C
C
2
0
0
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
7
8
9
10
V
, COLLECTOR TO EMITTER VOLTAGE (V)
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
CE
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
0.7
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
0.6
R
= 82Ω, L = 1mH, V
= 480V
R
= 82Ω, L = 1mH, V
= 480V
G
CE
G
CE
0.6
0.5
0.4
0.3
0.2
0.1
0
0.5
0.4
0.3
0.2
0.1
0
o
o
T
= 25 C, T = 150 C, V
= 10V
GE
J
J
o
T
= 150 C; V
= 10V OR 15V
J
GE
o
T
= 25 C; V
= 10V OR 15V
7 8
J
GE
o
o
T
4
= 25 C, T = 150 C, V
= 15V
J
J
GE
1
2
3
4
5
6
1
2
3
5
6
7
8
I
, COLLECTOR TO EMITTER CURRENT (A)
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
80
45
R
G
= 82Ω, L = 1mH, V = 480V
CE
R
T
= 82Ω, L = 1mH, V
= 480V
CE
G
70
60
50
40
30
20
10
40
35
30
25
20
15
10
o
o
= 25 C, T = 150 C, V
GE
= 10V
J
J
o
o
T
= 25 C, T = 150 C, V = 10V
GE
J
J
o
o
T
= 25 C, T = 150 C, V = 15V
GE
J
J
o
o
T
= 25 C, T = 150 C, V
= 15V
J
J
GE
1
2
3
4
5
6
7
8
1
2
3
4
5
6
7
8
I
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
CE
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
©2001 Fairchild Semiconductor Corporation
HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3 Rev. B
HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3
Typical Performance Curves Unless Otherwise Specified (Continued)
140
120
100
250
R
= 82Ω, L = 1mH, V = 480V
CE
R
= 82Ω, L = 1mH, V
= 480V
CE
G
G
225
200
175
150
o
T
= 150 C, V = 15V
GE
J
o
T
= 150 C, V
= 10V OR 15V
J
GE
o
T
= 150 C, V
= 10V
J
GE
o
125
100
T
= 25 C, V
= 15V
= 10V
80
60
J
GE
GE
o
= 25 C, V
T
= 10V OR 15V
J
GE
o
T
= 25 C, V
2
J
75
1
2
3
4
5
6
7
8
1
3
4
5
6
7
8
I
, COLLECTOR TO EMITTER CURRENT (A)
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
30
15
o
= 25 C
o
T
PULSE DURATION = 250µs
C
I
= 1mA, R = 171Ω, T = 25 C
g(REF)
L
C
25
20
15
10
5
12
9
o
T
= -55 C
C
o
T
= 150 C
C
6
V
= 200V
V
= 400V
V
= 600V
CE
CE
CE
3
0
0
5
6
7
8
9
10
11
12
13
14
15
0
5
10
15
20
25
V
, GATE TO EMITTER VOLTAGE (V)
Q , GATE CHARGE (nC)
GE
g
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORM
500
400
300
200
FREQUENCY = 1MHz
C
IES
C
OES
100
0
C
RES
0
5
10
15
20
25
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
©2001 Fairchild Semiconductor Corporation
HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3 Rev. B
HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3
Typical Performance Curves Unless Otherwise Specified (Continued)
0
10
0.5
0.2
0.1
-1
10
10
0.05
t
1
0.02
0.01
P
D
DUTY FACTOR, D = t / t
1
2
t
SINGLE PULSE
2
PEAK T = (P X Z
X R
) + T
JC C
J
D
JC
θ
θ
-2
-5
10
-4
-3
-2
10
-1
10
0
1
10
10
10
10
t , RECTANGULAR PULSE DURATION (s)
1
FIGURE 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveform
L = 1mH
90%
OFF
RHRD460
10%
V
GE
E
ON
E
R
= 82Ω
G
V
CE
+
90%
V
= 480V
DD
10%
d(OFF)I
-
I
CE
t
t
fI
t
fI
t
d(ON)I
FIGURE 17. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 18. SWITCHING TEST WAVEFORMS
©2001 Fairchild Semiconductor Corporation
HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3 Rev. B
HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3
Handling Precautions for IGBTs
Operating Frequency Information
Insulated Gate Bipolar Transistors are susceptible to gate-
insulation damage by the electrostatic discharge of energy
through the devices. When handling these devices, care
should be exercised to assure that the static charge built in
the handler’s body capacitance is not discharged through the
device. With proper handling and application procedures,
however, IGBTs are currently being extensively used in
production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (I ) plots are possible using
CE
the information shown for a typical unit in Figures 5, 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows f
or f ; whichever is smaller at each
MAX1
MAX2
point. The information is based on measurements of a
typical device and is bounded by the maximum rated junction
temperature.
f
is defined by f
= 0.05/(t
MAX1
+ t ).
d(OFF)I d(ON)I
MAX1
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD™ LD26” or equivalent.
are possible. t
and t are defined in Figure 18.
d(OFF)I
d(ON)I
Device turn-off delay can establish an additional frequency
limiting condition for an application other than T . t
JM d(OFF)I
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
is important when controlling output ripple under a lightly
loaded condition.
f
is defined by f
= (P - P )/(E + E ). The
OFF ON
MAX2
MAX2
D
C
3. Tips of soldering irons should be grounded.
allowable dissipation (P ) is defined by P = (T - T )/R
.
D
D
JM θJC
C
4. Devices should never be inserted into or removed from
circuits with power on.
The sum of device switching and conduction losses must
not exceed P . A 50% duty factor was used (Figure 3) and
D
5. Gate Voltage Rating - Never exceed the gate-voltage
the conduction losses (P ) are approximated by
C
rating of V
. Exceeding the rated V can result in
GEM
GE
P
= (V
CE
x I )/2.
CE
C
permanent damage to the oxide layer in the gate region.
E
and E
are defined in the switching waveforms
OFF
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate open-
circuited or floating should be avoided. These conditions
can result in turn-on of the device due to voltage buildup
on the input capacitor due to leakage currents or pickup.
ON
shown in Figure 18. E
is the integral of the instantaneous
ON
power loss (I
CE
x V ) during turn-on and E
is the
OFF
x V ) during
CE
integral of the instantaneous power loss (I
CE
CE
turn-off. All tail losses are included in the calculation for
E ; i.e., the collector current equals zero (I = 0).
OFF
7. Gate Protection - These devices do not have an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
CE
©2001 Fairchild Semiconductor Corporation
HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3 Rev. B
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