HG106C [ETC]
High-stability GaAs Hall element; 高稳定性砷化镓霍尔元件
| 型号： | HG106C |
| 厂家： | 
ETC |
| 描述： | High-stability GaAs Hall element |
| 文件： | 总2页 (文件大小：39K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GaAs Hall Element
Please be aware that AKE products are not intended for use in life
support equipment, devices, or systems. Use of AKE products in such
applications requires the advance written approval of the appropriate
AKE officer.
Certain applications using semiconductor devices may involve potential
risks of personal injury, property damage, or loss of life. In order to
minimize these risks, adequate design and operating safeguards
should be provided by the customer to minimize inherent or procedural
hazards. Inclusion of AKE products in such applications is understood to
be fully at the risk of the customer using AKE devices or systems.
HG-106C
•High-stability GaAs Hall element.
•Ultra mini-mold SMT package.
•Shipped in packet-tape reel (4000pcs per reel).
Note : It is requested to read and accept "IMPORTANT NOTICE".
•Absolute Maximum Ratings
Item
Symbol
Limit
Unit
V
Max. Input Voltage
Max. Power Dissipation
Operating Temp. Range
Storage Temp. Range
10
V
mW
˚C
in
P
D
150
T
–40 to +125
–40 to +150
opr.
T
˚C
stg.
•Dimensional Drawing (mm)
1.5±0.1
•Electrical Characteristics(T =25˚C)
a
0.9
0.3
0.3
0.3
Item
Symbol
Conditions
Min. Typ. Max. Unit
1
4
VH
B=0.1T, V =6V
c
Output Hall Voltage
110
150
mV
0 to 0.1
R
in
B=0T, I =0.1mA
c
Input Resistance
Output Resistance
Offset Voltage
650
650
–11
850
850
+11
R
out
B=0T, I =0.1mA
c
V
os
B=0T, V =6V
c
mV
3˚
5˚
2
3
Temp. Coefficient of VH
25˚C to 125˚C
-0.06 %/˚C
0.3 %/˚C
VH
0.1
Temp. Coefficient of R
in
B=0T, I =0.1mA
c
R
in
Linearity of output
Hall voltage
B=0.1/0.5T, I =0.5mA
c
K
2
%
Notes : 1. VH = VHM – Vos (VHM:meter indication)
Pinning
1
VH (T2) – VH (T1)
X 100
(T2 – T1)
2. VH
3. Rin
=
=
X
VH (T1)
1
Rin (T2) – Rin
(T ) X 100
1
) ± (
X
Rin (T1)
(T2 – T1)
3
4
Input
1(±)
2(±)
K (B
[K (B ) + K (B
1
) – K (B
2)
/
K
4.
=
X 100
2
1
2)]
) ± (
Output
T1 = 25˚C, T2 = 125˚C
VH
K =
IC • B
B1 = 0.5T, B2 = 0.1T
•Characteristic Curves
Allowable Package Power Dissipation (PD
–Ta)
200
160
120
80
40
0
0
20
40
60
80
100
120
140
Ambient Temperature.(˚C)
36
HG-106C
R -T
in
b
c
VH-B
1000
600
500
400
300
200
100
0
I
const
c
V
const
c
800
I
V
T
= 10 (mA)
= 6 (V)
c
c
= 25 (˚C)
I
a
c
600
400
V
c
200
0
–50
0
0
0
50
100
100
100
150
0
200
Magnetic Flux Density B (mT)
300
100
Ambient Temperature(˚C)
VH-T
VH-V , VH-Ic
c
200
150
100
250
I
const
const
c
I
V
c
c
200
B = 0.1 (T)
T
V
c
= 25 (˚C)
a
V
c
150
100
50
I
c
I
const
c
V
const
c
50
0
g
I
V
= 10 (mA)
= 6 (V)
c
c
B = 0.1 (T)
I :(mA)
c
0
0
–50
50
150
2
4
6
8
10
V :(V)
c
I
(mA) Input Current
Ambient Temperature(˚C)
c
V
(V) Input Voltage
c
V
-V , V -I
os c
V
-T
os
c
os
8
7
6
5
4
3
2
1
0
15
I
const
c
V
const
c
I
c
B = 0 (mT)
= 25 (˚C)
T
a
V
c
10
5
V
c
j
I
const
c
I
V
const
c
c
I
= 10 (mA)
= 6 (V)
c
V
c
B = 0 (mT)
I :(mA)
c
V :(V)
c
0
0
2
4
6
8
10
-50
50
150
I
(mA) Input Current
Ambient Temperature(˚C)
c
V
(V) Input Voltage
c
*Magnetic Flux Density
1(mT)=10(G)
In This Example : R =750( ), V =4.6(mV), V =
6(V)
c
in
os
37
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