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HCF4085 [ETC]

DUAL 2-WIDE 2-INPUT AND-OR-INVERTER GATE ; 双路2宽2输入与或反相门\n
HCF4085
型号： HCF4085
厂家： ETC    ETC
描述：

DUAL 2-WIDE 2-INPUT AND-OR-INVERTER GATE
双路2宽2输入与或反相门\n

输入元件
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HCF4085B  
DUAL 2-WIDE 2-INPUT AND-OR INVERTER GATE  
■
MEDIUM-SPEED OPERATION  
= 90ns, t = 125ns (Typ.) at 10V  
t
PHL  
PLH  
■
■
INDIVIDUAL INHIBIT CONTROLS  
QUIESCENT CURRENT SPECIFIED UP TO  
20V  
■
STANDARDIZED SYMMETRICAL OUTPUT  
CHARACTERISTICS  
DIP  
SOP  
■
■
5V, 10V AND 15V PARAMETRIC RATINGS  
INPUT LEAKAGE CURRENT  
I = 100nA (MAX) AT V = 18V T = 25°C  
ORDER CODES  
PACKAGE  
I
DD  
A
■
■
100% TESTED FOR QUIESCENT CURRENT  
MEETS ALL REQUIREMENTS OF JEDEC  
JESD13B "STANDARD SPECIFICATIONS  
FOR DESCRIPTION OF B SERIES CMOS  
DEVICES"  
TUBE  
T & R  
DIP  
HCF4085BEY  
HCF4085BM1  
SOP  
HCF4085M013TR  
DESCRIPTION  
HCF4085B contains a pair of AND-OR INVERT  
gates, each consisting of two 2-input AND gates  
driving a 3-input NOR gate. Individual inhibit  
controls are provided for both A-O-I gates.  
HCF4085B is a monolithic integrated circuit  
fabricated in Metal Oxide Semiconductor  
technology available in DIP and SOP packages.  
PIN CONNECTION  
September 2002  
1/8  
HCF4085B  
INPUT EQUIVALENT CIRCUIT  
PIN DESCRIPTION  
PIN No  
SYMBOL  
NAME AND FUNCTION  
1, 2, 12, 13  
5, 6, 8, 9  
10, 11  
3, 4  
A1 to D1  
A2 to D2  
Data Inputs  
Data Inputs  
INHIBIT 1, 2 Inhibit Control Inputs  
E1, E2  
Data Outputs  
V
7
Negative Supply Voltage  
Positive Supply Voltage  
SS  
V
14  
DD  
TRUTH TABLE  
A
B
C
D
INHIBIT OUT  
X
H
X
X
H
X
X
X
H
X
X
H
H
L
L
L
L
L
ALL OTHER COMBINATIONS  
H
LOGIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
V
Supply Voltage  
DC Input Voltage  
DC Input Current  
-0.5 to +22  
V
V
DD  
V
-0.5 to V + 0.5  
I
DD  
I
± 10  
200  
mA  
mW  
mW  
°C  
I
P
Power Dissipation per Package  
Power Dissipation per Output Transistor  
Operating Temperature  
D
100  
T
-55 to +125  
op  
T
Storage Temperature  
-65 to +150  
°C  
stg  
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is  
not implied.  
All voltage values are referred to V pin voltage.  
SS  
2/8  
HCF4085B  
RECOMMENDED OPERATING CONDITIONS  
Symbol  
Parameter  
Value  
Unit  
V
Supply Voltage  
3 to 20  
0 to V  
V
V
DD  
V
Input Voltage  
I
DD  
T
Operating Temperature  
-55 to 125  
°C  
op  
DC SPECIFICATIONS  
Test Condition  
Value  
-40 to 85°C -55 to 125°C Unit  
T = 25°C  
Symbol  
Parameter  
A
V
V
|I |  
V
DD  
I
O
O
(V)  
(V)  
(µA) (V)  
Min. Typ. Max. Min. Max. Min. Max.  
I
Quiescent Current  
0/5  
0/10  
0/15  
0/20  
0/5  
5
0.02  
0.02  
0.02  
0.04  
1
2
30  
60  
30  
60  
L
10  
15  
20  
µA  
4
120  
600  
120  
600  
20  
V
High Level Output  
Voltage  
<1  
<1  
<1  
<1  
<1  
<1  
<1  
<1  
5
4.95  
9.95  
4.95  
9.95  
4.95  
9.95  
OH  
0/10  
0/15  
5/0  
10  
V
V
V
V
15 14.95  
14.95  
14.95  
V
Low Level Output  
Voltage  
5
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
OL  
10/0  
15/0  
10  
15  
V
High Level Input  
Voltage  
0.5/4.5  
1/9  
5
3.5  
7
3.5  
7
3.5  
7
IH  
10  
15  
5
1.5/13.5 <1  
11  
11  
11  
V
Low Level Input  
Voltage  
4.5/0.5  
9/1  
<1  
<1  
1.5  
3
1.5  
3
1.5  
3
IL  
10  
15  
5
13.5/1.5 <1  
4
4
4
I
Output Drive  
Current  
0/5  
0/5  
2.5  
4.6  
9.5  
13.5  
0.4  
0.5  
1.5  
<1  
<1  
<1  
<1  
<1  
<1  
<1  
-1.36 -3.2  
-1.15  
-0.36  
-0.9  
-2.4  
0.36  
0.9  
-1.1  
-0.36  
-0.9  
-2.4  
0.36  
0.9  
OH  
5
-0.44  
-1.1  
-3.0  
0.44  
1.1  
-1  
-2.6  
-6.8  
1
mA  
mA  
0/10  
0/15  
0/5  
10  
15  
5
I
Output Sink  
Current  
OL  
0/10  
0/15  
10  
15  
2.6  
6.8  
3.0  
2.4  
2.4  
I
Input Leakage  
Current  
I
-5  
0/18  
Any Input  
Any Input  
18  
±0.1  
±1  
±1  
µA  
±10  
C
Input Capacitance  
5
7.5  
pF  
I
The Noise Margin for both "1" and "0" level is: 1V min. with V =5V, 2V min. with V =10V, 2.5V min. with V =15V  
DD  
DD  
DD  
3/8  
HCF4085B  
DYNAMIC ELECTRICAL CHARACTERISTICS (T  
= 25°C, C = 50pF, R = 200KΩ, t = t = 20 ns)  
amb  
L
L
r
f
Test Condition  
Value (*)  
Unit  
Symbol  
Parameter  
V
(V)  
Min. Typ. Max.  
DD  
t
t
t
t
Propagation Delay Time  
(DATA)  
5
225  
90  
450  
180  
130  
620  
250  
180  
300  
120  
80  
PHL  
PLH  
PHL  
PLH  
10  
15  
5
ns  
ns  
ns  
ns  
ns  
65  
Propagation Delay Time  
(DATA)  
310  
125  
90  
10  
15  
5
Propagation Delay Time  
(INHIBIT)  
150  
60  
10  
15  
5
40  
Propagation Delay Time  
(INHIBIT)  
250  
100  
70  
500  
200  
140  
200  
100  
80  
10  
15  
5
t
t
Transition Time  
100  
50  
TLH THL  
10  
15  
40  
(*) Typical temperature coefficient for all V value is 0.3 %/°C.  
DD  
TEST CIRCUIT  
C
R
R
= 50pF or equivalent (includes jig and probe capacitance)  
L
L
T
= 200KΩ  
= Z  
of pulse generator (typically 50Ω)  
OUT  
4/8  
HCF4085B  
WAVEFORM : PROPAGATION DELAY TIMES (f=1MHz; 50% duty cycle)  
5/8  
HCF4085B  
Plastic DIP-14 MECHANICAL DATA  
mm.  
inch  
TYP.  
DIM.  
MIN.  
0.51  
1.39  
TYP  
MAX.  
MIN.  
0.020  
0.055  
MAX.  
a1  
B
b
1.65  
0.065  
0.5  
0.020  
0.010  
b1  
D
E
e
0.25  
20  
0.787  
8.5  
2.54  
15.24  
0.335  
0.100  
0.600  
e3  
F
7.1  
5.1  
0.280  
0.201  
I
L
3.3  
0.130  
Z
1.27  
2.54  
0.050  
0.100  
P001A  
6/8  
HCF4085B  
SO-14 MECHANICAL DATA  
mm.  
inch  
TYP.  
DIM.  
MIN.  
TYP  
MAX.  
1.75  
0.2  
MIN.  
MAX.  
0.068  
0.007  
0.064  
0.018  
0.010  
A
a1  
a2  
b
0.1  
0.003  
1.65  
0.46  
0.25  
0.35  
0.19  
0.013  
0.007  
b1  
C
0.5  
0.019  
c1  
D
45˚ (typ.)  
8.55  
5.8  
8.75  
6.2  
0.336  
0.228  
0.344  
0.244  
E
e
1.27  
7.62  
0.050  
0.300  
e3  
F
3.8  
4.6  
0.5  
4.0  
5.3  
0.149  
0.181  
0.019  
0.157  
0.208  
0.050  
0.026  
G
L
1.27  
0.68  
M
S
˚ (max.)  
8
PO13G  
7/8  
HCF4085B  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the  
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from  
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications  
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information  
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or  
systems without express written approval of STMicroelectronics.  
© The ST logo is a registered trademark of STMicroelectronics  
© 2002 STMicroelectronics - Printed in Italy - All Rights Reserved  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco  
Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.  
© http://www.st.com  
8/8  

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