HA5022/883 [ETC]

Dual 100MHz Video Current Feedback Amplifier with Disable ; 双100MHz的视频电流反馈放大器具有禁用
HA5022/883
型号: HA5022/883
厂家: ETC    ETC
描述:

Dual 100MHz Video Current Feedback Amplifier with Disable
双100MHz的视频电流反馈放大器具有禁用

放大器
文件: 总6页 (文件大小:560K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
TM  
HA-5002/883  
Monolithic, Wideband, High Slew Rate,  
High Output Current Buffer  
July 1994  
Features  
Description  
• This Circuit is Processed in Accordance to MIL-STD-  
883 and is Fully Conformant Under the Provisions of  
Paragraph 1.2.1.  
The HA-5002/883 is a monolithic, wideband, high slew rate,  
high output current, buffer amplifier.  
Utilizing the advantages of the Harris Dielectric Isolation tech-  
nologies, the HA-5002/883 current buffer offers 1300V/µs  
slew rate typically and 1000V/µs minimum with 110MHz of  
bandwidth. The ±100mA minimum output current capability is  
enhanced by a 3output impedance.  
• Voltage Gain (R = 1k) . . . . . . . . . . . . . . . . .0.98 (Min)  
L
0.995 (Typ)  
(R = 100) . . . . . . . . . . . . . . . .0.96 (Min)  
L
0.971 (Typ)  
The monolithic HA-5002/883 will replace the hybrid LH0002  
with corresponding performance increases. These charac-  
teristics range from the 3M(typ) input impedance to the  
increased output voltage swing. Monolithic design technolo-  
gies have allowed a more precise buffer to be developed  
with more than an order of magnitude smaller gain error. The  
voltage gain is 0.98 guaranteed minimum with a 1kload  
and 0.96 minimum with a 100load.  
• High Input Impedance . . . . . . . . . . . . . . . . . 1.5M(Min)  
3M(Typ)  
• Low Output Impedance . . . . . . . . . . . . . . . . . . 5(Max)  
3(Typ)  
• Very High Slew Rate . . . . . . . . . . . . . . . .1000V/µs (Min)  
1300V/µs (Typ)  
• Wide Small Signal Bandwidth. . . . . . . . . 110MHz (Typ)  
• High Output Current . . . . . . . . . . . . . . . . . 100mA (Min)  
• High Pulsed Output Current . . . . . . . . . . . 400mA (Max)  
• Monolithic Dielectric Isolation Construction  
• Replaces Hybrid LH0002  
The HA-5002/883 will provide many present hybrid users  
with a higher degree of reliability and at the same time  
increase overall circuit performance.  
Ordering Information  
PART  
NUMBER  
TEMPERATURE  
RANGE  
Applications  
PACKAGE  
8 Pin Can  
• Line Driver  
HA2-5002/883  
HA4-5002/883  
HA7-5002/883  
-55oC to +125oC  
-55oC to +125oC  
-55oC to +125oC  
• Data Acquisition  
• 110MHz Buffer  
20 Lead Ceramic LCC  
8 Lead CerDIP  
• High Power Current Booster  
• High Power Current Source  
• Sample and Holds  
• Radar Cable Driver  
• Video Products  
Pinouts  
HA-5002/883  
(CERDIP)  
TOP VIEW  
HA-5002/883  
(CLCC)  
TOP VIEW  
HA-5002/883  
(METAL CAN)  
TOP VIEW  
IN  
V1  
+
1
2
3
4
8
7
6
5
OUT  
V2+  
NC  
8
3
2
1 20 19  
V1+  
2
V1-  
1
7
5
V2-  
NC  
IN  
18  
17  
16  
15  
14  
NC  
NC  
V2-  
NC  
NC  
NC  
4
5
6
7
8
V2+  
V2+  
V2-  
6
NC  
NC  
NC  
V1-  
3
NC  
NC  
4
13  
10 11 12  
9
OUT  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
1-888-INTERSIL or 321-724-7143 | Intersil (and design) is a trademark of Intersil Americas Inc.  
Spec Number 511017-883  
FN3705  
Copyright © Intersil Americas Inc. 2002. All Rights Reserved  
258  
Specifications HA-5002/883  
Absolute Maximum Ratings  
Thermal Information  
Voltage Between V+ and V- Terminals . . . . . . . . . . . . . . . . . . . 44V  
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . Equal to Supplies  
Peak Output Current (50ms On, 1s Off). . . . . . . . . . . . . . . . . .±400mA  
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC  
Storage Temperature Range . . . . . . . . . . . . . . . . . -65oC to +150oC  
ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <4000V  
Lead Temperature (Soldering 10s). . . . . . . . . . . . . . . . . . . . +300oC  
Thermal Resistance  
θJA  
65oC/W  
θJC  
CerDIP Package . . . . . . . . . . . . . . . . . . . 115oC/W  
28oC/W  
15oC/W  
67oC/W  
Ceramic LCC Package . . . . . . . . . . . . . .  
Metal Can Package . . . . . . . . . . . . . . . . . 155oC/W  
Package Power Dissipation Limit at +75oC for TJ +175oC  
CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 870mW  
Ceramic LCC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.54W  
Metal Can Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 645mW  
Package Power Dissipation Derating Factor Above +75oC  
CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.7mW/oC  
Ceramic LCC Package . . . . . . . . . . . . . . . . . . . . . . . . 15.4mW/oC  
Metal Can Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.5mW/oC  
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation  
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.  
Operating Conditions  
Operating Temperature Range. . . . . . . . . . . . . . . . -55oC to +125oC  
RL 100Ω  
Operating Supply Voltage. . . . . . . . . . . . . . . . . . . . . . . . . ±12V to ±15V  
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS  
Device Tested at: VSUPPLY = ±12V and ±15V, RSOURCE = 50, CLOAD 10pF, VIN = 0V, Unless Otherwise Specified.  
LIMITS  
GROUP A  
PARAMETERS  
SYMBOL  
CONDITIONS  
VSUP = ±15V  
SUBGROUPS  
TEMPERATURE  
+25oC  
MIN  
-20  
-30  
-20  
-30  
-7  
MAX  
20  
30  
20  
30  
7
UNITS  
mV  
mV  
mV  
mV  
µA  
Input Offset  
Voltage  
VIO1  
1
2, 3  
1
+125oC, -55oC  
+25oC  
VIO2  
VSUP = ±12V  
2, 3  
1
+125oC, -55oC  
+25oC  
Input Bias Current  
IB1  
VSUP = ±15V, RS = 1kΩ  
VSUP = ±12V, RS = 1kΩ  
VSUP = ±12V, RL = 1k,  
2, 3  
1
+125oC, -55oC  
+25oC  
-10  
-7  
10  
7
µA  
IB2  
µA  
2, 3  
1
+125oC, -55oC  
+25oC  
-10  
0.98  
0.98  
0.98  
0.98  
0.96  
10  
-
µA  
Voltage Gain 1  
+AV1  
-AV1  
V/V  
V/V  
V/V  
V/V  
V/V  
V
IN = 10V  
2, 3  
1
+125oC, -55oC  
+25oC  
-
VSUP = ±12V, RL = 1k,  
IN = -10V  
-
V
2, 3  
1
+125oC, -55oC  
+25oC  
-
Voltage Gain 2  
Voltage Gain 3  
+AV2  
-AV2  
+AV3  
-AV3  
VSUP = ±12V, RL = 100,  
IN = 10V  
-
V
VSUP = ±12V, RL = 100,  
IN = -10V  
1
1
1
+25oC  
+25oC  
+25oC  
0.96  
0.96  
0.96  
-
-
-
V/V  
V/V  
V/V  
V
VSUP = ±15V, RL = 100,  
IN = 10V  
V
VSUP = ±15V, RL = 100,  
IN = -10V  
V
Spec Number 511017-883  
259  
Specifications HA-5002/883  
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)  
Device Tested at: VSUPPLY = ±12V and ±15V, RSOURCE = 50, CLOAD 10pF, VIN = 0V, Unless Otherwise Specified.  
LIMITS  
GROUP A  
PARAMETERS  
SYMBOL  
CONDITIONS  
SUBGROUPS  
TEMPERATURE  
+25oC  
MIN  
0.99  
0.99  
MAX  
UNITS  
V/V  
Voltage Gain 4  
+AV4  
VSUP = ±15V,  
RL = 1k,  
IN = +10V  
1
-
-
2, 3  
+125oC, -55oC  
V/V  
V
-AV4  
VSUP = ±15V,  
RL = 1k,  
1
+25oC  
0.99  
0.99  
-
-
V/V  
V/V  
2, 3  
+125oC, -55oC  
V
IN = -10V  
Output Voltage  
Swing  
+VOUT1  
-VOUT1  
+VOUT2  
-VOUT2  
+VOUT3  
-VOUT3  
VSUP = ±15V,  
RL = 100,  
1
+25oC  
10  
10  
-
-
V
V
2, 3  
+125oC, -55oC  
V
IN = +15V  
VSUP = ±15V,  
RL = 100,  
1
+25oC  
-
-
-10  
-10  
V
V
2, 3  
+125oC, -55oC  
V
IN = -15V  
VSUP = ±15V,  
RL = 1k,  
1
+25oC  
10  
10  
-
-
V
V
2, 3  
+125oC, -55oC  
V
IN = +15V  
VSUP = ±15V,  
RL = 1k,  
1
+25oC  
-
-
-10  
-10  
V
V
2, 3  
+125oC, -55oC  
V
IN = -15V  
VSUP = ±12V,  
RL = 1k,  
1
+25oC  
10  
10  
-
-
V
V
2, 3  
+125oC, -55oC  
V
IN = +12V  
VSUP = ±12V,  
RL = 1k,  
1
+25oC  
-
-
-10  
-10  
V
V
2, 3  
+125oC, -55oC  
V
IN = -12V  
Output Current  
+IOUT1  
VSUP = ±15V,  
OUT = +10V  
1
2, 3  
1
+25oC  
+125oC, -55oC  
+25oC  
100  
100  
-
-
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
dB  
V
-
-IOUT1  
VSUP = ±15V,  
OUT = -10V  
-100  
V
2, 3  
1
+125oC, -55oC  
+25oC  
-
-100  
+IOUT2  
VSUP = ±12V,  
OUT = +10V  
100  
100  
-
-
V
2, 3  
1
+125oC, -55oC  
+25oC  
-
-100  
-100  
-
-IOUT2  
VSUP = ±12V,  
OUT = -10V  
V
2, 3  
1
+125oC, -55oC  
+25oC  
-
Power Supply  
Rejection Ratio  
+PSRR1  
VSUP = ±5V,  
V+ = +20V, V- = -15V,  
V+ = +10V, V- = -15V  
54  
54  
2, 3  
+125oC, -55oC  
-
dB  
-PSRR1  
+PSRR2  
-PSRR2  
VSUP = ±5V,  
V+ = +15V, V- = -20V,  
V+ = +15V, V- = -10V  
1
+25oC  
54  
54  
-
-
dB  
dB  
2, 3  
+125oC, -55oC  
VSUP = ±5V,  
V+ = +17V, V- = -12V,  
V+ = +7V, V- = -12V  
1
+25oC  
54  
54  
-
-
dB  
dB  
2, 3  
+125oC, -55oC  
VSUP = ±5V,  
V+ = +12V, V- = -17V,  
V+ = +12V, V- = -7V  
1
+25oC  
54  
54  
-
-
dB  
dB  
2, 3  
+125oC, -55oC  
Spec Number 511017-883  
260  
Specifications HA-5002/883  
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)  
Device Tested at: VSUPPLY = ±12V and ±15V, RSOURCE = 50, CLOAD 10pF, VIN = 0V, Unless Otherwise Specified.  
LIMITS  
GROUP A  
PARAMETERS  
SYMBOL  
CONDITIONS  
SUBGROUPS  
TEMPERATURE  
+25oC  
MIN  
-
MAX  
UNITS  
mA  
Power Supply  
Current  
+ICC1  
VSUP = ±15V,  
OUT = 0V  
1
2, 3  
1
10  
10  
-
V
+125oC, -55oC  
+25oC  
-
mA  
-ICC1  
+ICC2  
-ICC2  
VSUP = ±15V,  
OUT = 0V  
-10  
-10  
-
mA  
V
2, 3  
1
+125oC, -55oC  
+25oC  
-
mA  
VSUP = ±12V,  
OUT = 0V  
10  
10  
-
mA  
V
2, 3  
1
+125oC, -55oC  
+25oC  
-
mA  
VSUP = ±12V,  
OUT = 0V  
-10  
-10  
mA  
V
2, 3  
+125oC, -55oC  
-
mA  
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS  
Table 2 Intentionally Left Blank. See AC Specifications in Table 3  
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS  
Device Characterized at: VSUPPLY = ±15V or ±12V, RLOAD = 1k, CLOAD 10pF, Unless Otherwise Specified.  
LIMITS  
MAX  
PARAMETERS  
Input Resistance  
SYMBOL  
RIN1  
CONDITIONS  
VSUP = ±15V  
NOTES  
TEMPERATURE  
+25oC  
MIN  
1.5  
UNITS  
MΩ  
1
1
1
-
-
RIN2  
VSUP = ±12V  
+25oC  
1.5  
MΩ  
Slew Rate  
+SR1  
VSUP = ±15V,  
VOUT = -5V to +5V  
+25oC  
1000  
1000  
1000  
1000  
1000  
1000  
1000  
1000  
-
-
V/µs  
V/µs  
V/µs  
V/µs  
V/µs  
V/µs  
V/µs  
V/µs  
ns  
+125oC, -55oC  
+25oC  
-
-SR1  
+SR2  
-SR2  
TR  
VSUP = ±15V,  
VOUT = +5V to -5V  
1
1
1
-
+125oC, -55oC  
+25oC  
-
VSUP = ±12V,  
VOUT = -5V to +5V  
-
+125oC, -55oC  
+25oC  
-
VSUP = ±12V,  
VOUT = +5V to -5V  
-
+125oC, -55oC  
+25oC  
-
Rise and Fall Time  
VSUP = ±15V or ±12V,  
VOUT = 0 to +500mV  
1, 2  
1, 2  
1, 2  
1, 2  
10  
10  
10  
10  
+125oC, -55oC  
+25oC  
-
ns  
TF  
VSUP = ±15V or ±12V,  
VOUT = 0 to -500mV  
-
ns  
+125oC, -55oC  
-
ns  
Spec Number 511017-883  
261  
Specifications HA-5002/883  
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)  
Device Characterized at: VSUPPLY = ±15V or ±12V, RLOAD = 1k, CLOAD 10pF, Unless Otherwise Specified.  
LIMITS  
MIN  
PARAMETERS  
Overshoot  
SYMBOL  
CONDITIONS  
NOTES  
TEMPERATURE  
+25oC  
MAX  
30  
UNITS  
%
+OS  
VSUP = ±12V or ±15V,  
1
-
-
-
-
-
-
-
-
-
-
VOUT = 0 to +500mV  
+125oC, -55oC  
+25oC  
30  
%
-OS  
PC1  
PC2  
V
SUP = ±12V or ±15V,  
1
30  
%
VOUT = 0 to -500mV  
+125oC, -55oC  
+25oC  
30  
%
Quiescent Power  
Consumption  
VSUP = ±15V,  
1, 3  
1, 3  
300  
300  
240  
240  
5
mW  
mW  
mW  
mW  
VIN = 0V,  
IOUT = 0mA  
+125oC, -55oC  
+25oC  
VSUP = ±12V,  
IN = 0V,  
OUT = 0mA  
V
I
+125oC, -55oC  
+25oC  
Output Resistance  
NOTES:  
ROUT1  
ROUT2  
VSUP = ±12V  
VSUP = ±12V  
1
1
+25oC  
5
1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These param-  
eters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization  
based upon data from multiple production runs which reflect lot to lot and within lot variation.  
2. Measured between 10% and 90% points.  
3. Quiescent Power Consumption based upon Quiescent Supply Current test maximum. (No load on outputs.)  
TABLE 4. ELECTRICAL TEST REQUIREMENTS  
MIL-STD-883 TEST REQUIREMENTS  
Interim Electrical Parameters (Pre Burn-In)  
Final Electrical Test Parameters  
Group A Test Requirements  
SUBGROUPS (SEE TABLE 1)  
1
1 (Note 1), 2, 3  
1, 2, 3  
Groups C and D Endpoints  
1
NOTE:  
1. PDA applies to Subgroup 1 only.  
Spec Number 511017-883  
262  
HA-5002/883  
Die Characteristics  
DIE DIMENSIONS:  
81 x 80 x 19 mils ± 1 mils  
2050 x 2030 x 483µm ± 25.4µm  
METALLIZATION:  
Type: Al, 1% Cu  
Thickness: 20kÅ ± 2kÅ  
GLASSIVATION:  
Type: Nitride  
Thickness: 7kÅ ± 0.7kÅ  
WORST CASE CURRENT DENSITY:  
5
2
0.7 x 10 A/cm at 3.6mA  
SUBSTRATE POTENTIAL (Powered Up): V1-  
TRANSISTOR COUNT: 27  
PROCESS: Bipolar Dielectric Isolation  
Metallization Mask Layout  
HA-5002/883  
V1-  
IN  
V1- (ALT)  
V1+ (ALT)  
V2+  
V2-  
V1+  
OUT  
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.  
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality  
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without  
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and  
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result  
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.  
For information regarding Intersil Corporation and its products, see www.intersil.com  
Spec Number 511017-883  
263  

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