FML-36R [ETC]
Ultra-Fast-Recovery Rectifier Diodes; 超快速恢复整流二极管
| 型号： | FML-36R |
| 厂家： | 
ETC |
| 描述： | Ultra-Fast-Recovery Rectifier Diodes |
| 文件： | 总3页 (文件大小：85K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1
trr : IF/ IR (=IF) 90% Recovery Point
(ex. IF/ IR =100mA/100mA 90% Recovery Point)
2
trr : IF/ IR (=2 IF) 75% Recovery Point
600V
Ultra-Fast-Recovery Rectifier Diodes
(ex. IF/ IR =100mA/200mA 75% Recovery Point)
IFSM
IR
(µA)
IR (H)
1
2
t
t
rr
(ns)
rr
(ns)
Rth (j-
Rth (j- c)
(°C/W)
)
(
A
)
(mA)
VRM
(V)
IF (AV)
Tj
Tstg
VF
(V)
Mass
(g)
Fig.
No.
Package
Part Number
IF
Ta
(°C)
IF/ IFP
(mA)
IF/ IFP
(mA)
(
A
)
50Hz
Half-cycle Sinewave
Single Shot
(°C) (°C)
VR
=
VRM VR
=
VRM
(
A
)
max
max
max
30.0
0.5
180
15
–40 to +150 1.7 30.0
100
100
100
100
500
500
50
0.5
150
(
Tj) 150 500/500 70 500/1000
2.0
1.04
0.13
0.2
0.3
0.4
0.6
0.6
1.0
1.2
1.2
2.1
2.1
2.1
2.1
2.1
2.1
5.5
2.1
2.1
5.5
5.5
80
64
65
Surface Mount
MP3-306
AG01A
–40 to +150 1.8
–40 to +150 2.0
–40 to +150 2.0
–40 to +150 2.0
–40 to +150 2.0
0.5
0.5
0.6
1.0
1.0
0.5
0.5
0.5
2.5
2.5
0.1
0.2
2.5
0.1
3.0
0.5
100
100
100
100
100
150
100 100/100 50 100/200 22
0.5
10
100 100/100 50 100/200 20
100 100/100 50 100/200 17
100 100/100 50 100/200 15
100 100/100 50 100/200 12
50 100/100 35 100/200 12
50 100/100 35 100/200 10
EG01A
0.6
10
EG 1A
66
68
69
1.0
50
RG 10A
RG 2A
Axial
1.0
50
1.2
30
–40 to +150 1.55 1.2
RD 2A
2.0
60
–40 to +150 1.7
–40 to +150 2.0
–40 to +150 1.5
–40 to +150 2.5
–40 to +150 1.5
–40 to +150 1.5
–40 to +150 1.2
3.0
2.0
3.0
4.0
5.0
5.0
5.0
50
150
(Tj)
RL 3A
1.0 (2.0)
3.0
50
500
50
100
100 100/100 50 100/200
50 500/500 35 500/1000
100 100/100 50 100/200
50 500/500 35 500/1000
30 500/500 25 500/1000
8
70
71
RG 4A
80
150
(
100
100
150
Tj)
8
RL 4A
600
4.0
50
500
100
4.0
4.0
4.0
4.0
4.0
4.0
2.0
4.0
4.0
2.0
2.0
FMG-G26S
FML-G16S
FMX-G16S
FMN-G16S
72
79
—
5.0
50
5.0
50
50 15
50 10
100
0.3
100 20
Frame-2Pin
5.0
50
150 (Tj) 100 100/100 50 100/200
*
10.0
10.0
8.0
100
100
80
–40 to +150 1.7 10.0
–40 to +150 1.5 10.0
150
150
100
50 500/500 30 500/1000
30 500/500 25 500/1000
100 500/500 50 500/1000
70 500/500 35 500/1000
100 100/100 50 100/200
100 100/100 50 100/200
65 500/500 35 500/1000
FMD-G26S
FMX-G26S
FMG-G36S
FMC-26U
80
74
74
75
–40 to +150 2.5
–40 to +150 2.0
–40 to +150 2.2
–40 to +150 2.2
8.0
3.0
3.0
500
500
500
3
3.0
50
3
150
(
100
100
100
Tj)
6.0
50
3
FMG-26S, R
FMG-36S, R
FML-36S
Center-tap
15.0
20.0
80
7.5 1000
100
5
78
100
–40 to +150 1.7 10.0
0.3
: Under development
*
30
600V
Ultra-Fast-Recovery Rectifier Diodes
ꢀꢀExternal Dimensions
Flammability: UL94V-0 or Equivalent (Unit: mm)
0.6±0.05
0.78±0.05
0.78±0.05
0.98±0.05
0.57±0.02
Cathode Mark
Cathode Mark
Cathode Mark
Cathode Mark
Cathode Mark
2.7±0.2
2.7±0.2
2.4±0.1
4.0±0.2
4.0±0.2
5.0
15.0
9.0
4.2
2.8
10.0
3.3
3.3
1.4±0.1
1.2±0.05
Cathode Mark
Cathode Mark
2.2
2.6
2.3
3.4
1.0
+0.2
1.35
0.85
–0.1
0.65
6.5±0.2
5.2±0.2
0.45
5.08
5.45
5.45
2.6
5.0
15.0
9.0
4.2
4.2
2.8
10.0
10.0
2.2
3.3
3.3
2.8
C 0.5
C 0.5
3.3
2.2
2.6
2.6
2.3
3.4
1.0
+0.2
1.35
1.35
0.85
1.35
1.35
0.85
–0.1
0.65
5.45
5.45
0.45
0.45
2.6
2.54
2.54
2.54
2.54
S type
R type
4.44±0.2
10.2±0.3
1.3±0.2
a
b
c
0.1+–00..21
2.59±0.2
1.27±0.2
+0.2
0.4±0.1
–0.1
0.86
1.2±0.2
a : Part Number
b: Polarity
c: Lot No.
2.54±0.5
2.54±0.5
(Backside of case)
31
Characteristic Curves
Ultra-Fast-Recovery Rectifier Diodes
FMG-G26S
VF —IF Cha racteristics (Typical)
IFMS Rating
Tc —IF (AV) Derating
30
10
5
50
40
30
20
D.C.
20ms
4
3
1
=
t / T 1/2
=
T
a
150°C
100°C
60°C
=
t / T 1/3, Sinewave
0.1
0.01
2
=
t / T 1/6
25°C
1
0
10
0
0.001
0
0.4 0.8 1.2 1.6 2.0 2.4 2.8
Forward Voltage VF (V)
1
1
1
1
1
5
10
50
50
50
50
50
50
70
90
110
130
150
Case Temperature Tc (°C)
Overcurrent Cycles
FMG-G2CS
VF —IF Cha racteristics (Typical)
IFMS Rating
Ta —IF (AV) Derating
50
10
3.0
2.4
1.8
1.2
30
25
20
20ms
1
=
T
a
150°C
100°C
60°C
15
10
0.1
25°C
0.01
0.6
0
5
0
0.001
5
10
0
25
50
75
100
125 150
0
1
2
3
4
5
Ambient Temperature Ta (°C)
Forward Voltage VF (V)
Overcurrent Cycles
FML-G12S
VF —IF Cha racteristics (Typical)
IFMS Rating
Tc —IF (AV) Derating
20
10
5
65
60
=
t / T 1/2
D.C.
20ms
4
3
50
40
=
t / T 1/6
1
0.1
=
t / T 1/ 3, Sinewave
30
20
10
0
=
T
a
150°C
100°C
60°C
2
0.01
0.001
25°C
1
0
0.1
0.3
0.5
0.7
0.9
1.1
1.3
5
10
100
110
120
130
140
150
Case Temperature Tc (°C)
Forward Voltage VF (V)
Overcurrent Cycles
FML-G13S, G14S
VF —IF Cha racteristics (Typical)
IFMS Rating
Tc —IF (AV) Derating
5
20
10
70
60
50
40
30
=
t / T 1/2
D.C.
20ms
4
3
Sinewave
=
t / T 1/ 3
1
=
t / T 1/6
0.1
0.01
=
T
a
150°C
100°C
60°C
2
20
10
0
1
0
25°C
0.001
70
90
110
130
150
5
10
0
0.5
1.0
1.5
2.0
Case Temperature Tc (°C)
Forward Voltage VF (V)
Overcurrent Cycles
FML-G16S
VF —IF Cha racteristics (Typical)
IFMS Rating
Tc —IF (AV) Derating
50
10
5
50
40
30
20
10
0
=
t / T 1/2
20ms
D.C.
4
3
=
t / T 1/6
1
=
t / T 1/ 3, Sinewave
=
T
a
150°C
100°C
60°C
0.1
2
25°C
0.01
1
0
0.001
90
100 110 120
130 140
150
0
0.4
0.8
1.2
1.6 2.0
2.4
5
10
Case Temperature Tc (°C)
Forward Voltage VF (V)
Overcurrent Cycles
72
相关型号：
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Rectifier Diode, 1 Phase, 1 Element, 5A, 400V V(RRM), Silicon, TO-220, TO-220F, 2 PIN
ALLEGRO
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