FLD5F6CX-E27 [ETC]
FIBER OPTIC TRANSMITTER ; 光纤传输器\n型号: | FLD5F6CX-E27 |
厂家: | ETC |
描述: | FIBER OPTIC TRANSMITTER
|
文件: | 总6页 (文件大小:173K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
1,550nm MQW-DFB
DWDM Direct Modulation Laser
FLD5F6CX-E
FEATURES
• Direct Modulation MQW DFB Laser
• Built-in TEC, Thermistor and Monitor PD
• 14-Pin Butterfly Type Module
• Low Residual Chirp
• Optimized for 2.5 Gb/s Modulation Rates
• Selected wavelengths according to ITU-T grid available
APPLICATIONS
This MQW laser is intended for application in 2.5 Gb/s
long haul Dense Wavelength Division Multiplexing (DWDM) systems.
Transmission spans of 100 km are possible without amplification.
DESCRIPTION
The Multiple Quantum Well (MQW) Laser is a high power laser
capable of 2.5 Gb/s transmission. It is packaged in a “butterfly” type module.
The module employs a high efficiency optical coupling system, coupling the
laser output through a built-in optical isolator into a single mode fiber pigtail.
The modules also include a monitor photodiode, a thermoelectric cooler (TEC)
and thermistor. This device is designed for use in DWDM direct modulation transmission
systems. Selected wavelengths specified to the ITU-T grid are available.
ABSOLUTE MAXIMUM RATINGS (T =25°C)
c
Parameter
Symbol
Condition
Ratings
Unit
°C
T
Storage Temperature
Operating Case Temperature
-
-40 to +70
stg
T
°C
-
-20 to +65
op
P
f
CW
CW
mW
mA
V
5.0
150
2
Optical Output Power
Forward Current
I
F
V
R
Reverse Voltage
-
-
-
-
V
V
Photodiode Reverse Voltage
Photodiode Forward Current
TEC Voltage
20
10
2.5
1.4
10
95
95
DR
I
mA
V
DF
V
c
I
c
TEC Current
A
-
T
Lead Soldering Time
<260°C
Top<30°C
Tst<30°C
sec
%
sold
X
Environmental Operating Humidity
Environmental Storage Humidity
op
%
X
st
Edition 1.0
March 1999
1
1,550nm MQW-DFB
DWDM Direct Modulation Laser
FLD5F6CX-E
OPTICAL AND ELECTRICAL CHARACTERISTICS (T =T , T =25°C, BOL, unless otherwise specified)
set
L
c
Limits
Typ.
-
Parameter
Symbol
Conditions
Unit
°C
mA
V
Min.
15
Max.
35
Laser Set Temperature
Threshold Current
Forward Voltage
-
T
set
I
th
CW
3
-
1.6
25
-
40
1.75
28
-
V
FDC
CW, I =30 mA, pin 12-13
F
-
22
2
R
s
Series Resistance
CW, pin 12-13
Ω
V
r
CW, at I <1500µA
Reverse Voltage
Optical Output Power
Slope Efficiency
Threshold Power
V
mW
R
P
f
CW
2.0
0.035
-
-
-
η
CW, Pf=2.0mW
-
-
mW/mA
µW
P
th
I =I , CW
F th
-
50
Tracking Error (Note 1)
TE
Pf=2.0mW, T =-20 to 65°C
-0.5
-
-
+0.5
dB
c
I
m
CW, Pf=2.0mW, V =5V
DR
Monitor Current
0.10
1.0
100
10
-
mA
nA
pF
I
D
V
=5V
DR
Photodiode Dark Current
Photodiode Capacitance
Photodiode Cutoff Frequency
Peak Wavelength
-
-
2
C
t
V
V
=5V, f=1 MHz
DR
-
f
=5V, 50Ω load
DR
100
-
cm
MHz
nm
λ
Note (2)
Note (4)
-
p
-
Wavelength Drift
-
-
0.2
after 20 years
-
nm
Wavelength Stability with
Case Temperature
-
-
+/-2
pm/°C
Side Mode Suppression
Spectral Width (-20dB)
Sr
-
33
-
35
-
-
dB
Note (2)
Note (2)
0.5
nm
Rise Time (10%-90%)
Fall Time (10%-90%)
Cutoff Frequency
Note (2)
Note (2)
-
-
0.1
0.1
-
0.125
0.125
-
nsec
nsec
GHz
dB
t
r
t
f
f
c
P =2.0mW, -3 dB
f
4.0
-
In-Band Ripple (Window)
S
f=50 MHz~3 GHz
-
+/-1.5
21
11
f=50 MHz~2 GHz
f=2 GHz~3 GHz
f=3 GHz~5 GHz
8
6
3
-
-
-
-
-
-
dB
dB
dB
S
RF Return Loss
Optical Isolation
I
s
Tc=-20 to 65°C
f=2.5 GHz
Pf=2.0 mW, ORL=24 dB
25
-
35
-
-
dB
-140
Relative Intensity Noise
Kinks (up to 2.4 mW)
Pulsation
dB/Hz
RIN
Kns
-
-
None
None
No Floor
-
-
ER
PP
Note (3)
Note (3)
BER Performance
1.5
Power Penalty
-
dB
Note 1. TE=10*log{pf(Tcase)/Pf(Tc=25°C)}dB, APC
Note 2. 2.5 Gb/s NRZ, pseudo-random, Pb=0.2mW, Ppeak=2.0mW
Note 3. Bit rate=2.48832 Gb/s, PRBS=223-1, Dispersion=1,800 ps/nm (116km), Ppeak=2.0mW,
Pbias=0.2mW (Extinction ratio=10dB), B.E.R.=1x10--10
Decision point: Center of Back-to-Back at 10-9, Receiver: Fujitsu Standard Receiver
Note 4. The selected wavelength is available which is listed in Fig. 8
Edition 1.0
March 1999
2
1,550nm MQW-DFB
DWDM Direct Modulation Laser
FLD5F6CX-E
(T =T , T =25°C, BOL, unless otherwise specified)
TEC AND THERMISTOR CHARACTERISTICS
L
set
c
Limit
Typ.
Test Conditions
Parameter
Symbol
Unit
Min.
Max.
TL=Tset,
Pf=2mW, Tc=65°C
TL=Tset,
Pf=2mW, Tc=65°C
I
TEC Current
-
-
-
-
1.0
A
c
TEC Voltage
Cooler Power
-
-
2.4
2.4
V
V
c
TL=Tset,
Pf=2mW, Tc=65°C
W
P
R
TEC
TEC
TL=Tset,
Pf=2mW, Tc=65°C
TEC Resistance
2.0
2.4
3.2
Ω
R
tr
Thermistor Resistance
Thermistor B Constant
TL=15 to 35°C
6.3
-
15.4
kΩ
B
-
3,270
3,450
3,630
K
Fig. 1 Forward Current vs Output Power
Fig. 2 Frequency Response
4
P =2mW
f
12
9
T = 25°C
L
3
6
3
0
2
1
0
-3
-6
-9
-12
0
2
4
6
8
10
Frequency (GHz)
0
30
60
90
Forward Current, If (mA)
Edition 1.0
March 1999
3
1,550nm MQW-DFB
DWDM Direct Modulation Laser
FLD5F6CX-E
Fig. 4 Cooler Voltage -Current
Fig. 3 RF Return Loss
3.0
3.0
20
10
0
2.0
1.0
2.0
1.0
Vc
Ic
0.0
0.0
-10
-20
-1.0
-1.0
0
10 20 30 40 50 60 70 80
Cooler Temperature (°C)
0
2
4
6
8
10
Frequency (GHz)
Fig. 5 Spectrum
Fig. 6 Temperature Dependance of
Wavelength
10
0
1554
-10
-20
-30
-40
-50
1553
1552
1551
1550
-60
10
20
30
40
1545
1550
1555
Wavelength λ (nm)
Laser Temperature, T (°C)
L
Edition 1.0
March 1999
4
1,550nm MQW-DFB
DWDM Direct Modulation Laser
FLD5F6CX-E
Fig. 7 Transmission Characteristics
10-4
2.48832 Gb/s, NRZ
PRBS 223-1
TL=Tset,
Ppeak=2mW,
Pb=0.2mW,
(Rext=10dB)
10-6
10-8
After
116km
Transmission
Back to Back
10-10
10-12
-40
-35
-30
-25
Average Received Optical Power (dBm)
Fig. 8 Wavelength Table
0.1
0.1
0.1
0.1
-E41
1544.53
1545.32
1546.12
1546.92
1547.72
1548.51
1549.32
1550.12
1550.92
1551.72
1552.52
1553.33
1554.13
1554.94
1555.75
1556.55
1557.36
1558.17
Wavelength (nm)
(TL=Tset)
(in vacuum)
-E40
-E39
-E38
-E37
-E36
-E35
-E34
-E33
-E32
-E31
-E30
-E29
-E28
-E27
-E26
-E25
-E24
-E23
-E22
-E21
Part Number
Tolerance (nm)
1527.99
1528.77
1529.55
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
FLD5F6CX-E62
-E61
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
-E60
-E59
-E58
-E57
-E56
-E55
-E54
-E53
-E52
-E51
-E50
-E49
-E48
-E47
-E46
-E45
-E44
-E43
-E42
1530.33
1531.12
1531.90
1532.68
1533.47
1534.25
1535.04
1535.82
1536.61
1537.40
1538.19
1538.98
1539.77
1540.56
1541.35
1542.14
1542.94
1543.73
1558.98
1559.79
1560.61
1561.42
1562.23
1563.05
-E20
-E19
-E18
Edition 1.0
March 1999
5
1,550nm MQW-DFB
DWDM Direct Modulation Laser
FLD5F6CX-E
“CX” PACKAGE
UNIT: mm
TOP VIEW
17.24
15.24
7
6
5
4
3
2
1
2.54
14-0.5
PIN 1
TH
10 KΩ
PIN 7
TEC
8
9
10 11 12 13 14
0.5
4-φ2.67
1.70
20.83
22.0
26.04
29.97
PIN 14
5.41
5.47
8.17
PIN 8
PIN #
FUNCTION
0.5
1.70
1.
2.
3.
4.
5.
6.
7.
8.
9.
Temperature Monitor
Temperature Monitor
Laser DC Bias (-)
Monitor (Anode)
Monitor (Cathode)
TEHP (+)
TEHP (-)
Case Ground
Case Ground
4.15
5.47
* Pigtail length (L) shall
be specified in the detail
(individual) specification,
if it is special.
*L
23
10. N.C.
L=1500 min. for standard
13
11. Laser Ground
12. Laser Modulation (-)
13. Case Ground
14. N.C.
P
o
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
Americas & R.O.W.
CAUTION
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
• Do not put this product into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
55 Schanck Road,
Suite A-2
Freehold, NJ 07728-2964, U.S.A.
Phone: (732) 303-0282
FAX: (732) 431-3393
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
www.fcsi.fujitsu.com
FUJITSU QUANTUM DEVICES, LTD.
Asia & Japan
FUJITSU MIIKROELCTRONIK GmbH
Quantum Devices Division
Network House
Norreys Drive
2-7-1, Nishi Shinjuku
Shinjuku-ku, Tokyo 163-0721
Japan
Maidenhead, Berkshire SL6 4FJ, UK
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
Phone: 3-5322-3356
FAX: 3-5322-3398
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 1999 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0199M200
Edition 1.0
March 1999
6
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