DTA114EET1/D [ETC]
Bias Resistor Transistor ; 偏置电阻晶体管\n
| 型号： | DTA114EET1/D |
| 厂家： | 
ETC |
| 描述： | Bias Resistor Transistor
|
| 文件： | 总16页 (文件大小：149K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DTA114EET1 SERIES
Preferred Devices
Bias Resistor Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base–emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the
SC–75/SOT–416 package which is designed for low power surface
mount applications.
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PNP SILICON
BIAS RESISTOR
TRANSISTORS
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• The SC–75/SOT–416 package can be soldered using wave or reflow.
The modified gull–winged leads absorb thermal stress during
soldering eliminating the possibility of damage to the die.
• Available in 8 mm, 7 inch/3000 Unit Tape & Reel
PIN 3
COLLECTOR
(OUTPUT)
PIN 1
BASE
(INPUT)
R1
R2
PIN 2
EMITTER
(GROUND)
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Symbol
Value
50
Unit
Vdc
V
CBO
3
V
CEO
50
Vdc
2
I
C
100
mAdc
1
DEVICE MARKING AND RESISTOR VALUES
SC–75/SOT–416
CASE 463
Device
Marking
R1 (K)
R2 (K)
Shipping
STYLE 1
DTA114EET1
DTA124EET1
DTA144EET1
DTA114YET1
DTA114TET1
DTA143TET1
DTA123EET1
DTA143EET1
DTA143ZET1
DTA124XET1
DTA123JET1
DTA115EET1
DTA144WET1
6A
6B
6C
6D
6E
6F
6H
6J
6K
6L
6M
6N
6P
10
22
47
10
10
4.7
2.2
4.7
4.7
22
2.2
100
47
10
22
47
47
∞
3000/Tape & Reel
MARKING DIAGRAM
∞
6x
M
2.2
4.7
47
47
47
100
22
6x = Specific Device Code
= (See Marking Table)
M = Date Code
x
Preferred devices are recommended choices for future use
and best overall value.
Semiconductor Components Industries, LLC, 2001
1
Publication Order Number:
January, 2000 – Rev. 3
DTA114EET1/D
DTA114EET1 SERIES
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation,
P
D
FR–4 Board (Note 1.) @ T = 25°C
Derate above 25°C
200
1.6
mW
mW/°C
A
Thermal Resistance, Junction to Ambient (Note 1.)
Total Device Dissipation,
R
600
°C/W
θ
JA
P
D
FR–4 Board (Note 2.) @ T = 25°C
Derate above 25°C
300
2.4
mW
mW/°C
A
Thermal Resistance, Junction to Ambient (Note 2.)
Junction and Storage Temperature Range
R
400
°C/W
°C
θ
JA
T , T
J
–55 to +150
stg
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 × 1.0 Inch Pad
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2
DTA114EET1 SERIES
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Base Cutoff Current (V = 50 V, I = 0)
I
I
–
–
–
–
100
500
nAdc
nAdc
mAdc
CB
E
CBO
Collector–Emitter Cutoff Current (V = 50 V, I = 0)
CE
B
CEO
Emitter–Base Cutoff Current
(V = 6.0 V, I = 0)
DTA114EET1
DTA124EET1
DTA144EET1
DTA114YET1
DTA114TET1
DTA143TET1
DTA123EET1
DTA143EET1
DTA143ZET1
DTA124XET1
DTA123JET1
DTA115EET1
DTA144WET1
I
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.5
0.2
0.1
0.2
0.9
1.9
2.3
1.5
0.18
0.13
0.2
0.05
0.13
EBO
EB
C
Collector–Base Breakdown Voltage (I = 10 µA, I = 0)
V
V
50
50
–
–
–
–
Vdc
Vdc
C
E
(BR)CBO
Collector–Emitter Breakdown Voltage (Note 3.)
(BR)CEO
(I = 2.0 mA, I = 0)
C
B
ON CHARACTERISTICS (Note 3.)
DC Current Gain
DTA114EET1
DTA124EET1
DTA144EET1
DTA114YET1
DTA114TET1
DTA143TET1
DTA123EET1
DTA143EET1
DTA143ZET1
DTA124XET1
DTA123JET1
DTA115EET1
DTA144WET1
h
FE
35
60
80
60
–
–
–
–
–
–
–
–
–
–
–
–
–
(V = 10 V, I = 5.0 mA)
100
140
140
250
250
15
CE
C
80
160
160
8.0
15
80
80
80
80
80
27
140
130
140
150
140
Collector–Emitter Saturation Voltage (I = 10 mA, I = 0.3 mA)
V
CE(sat)
–
–
0.25
Vdc
Vdc
C
E
(I = 10 mA, I = 5 mA) DTA123EET1
C
B
(I = 10 mA, I = 1 mA) DTA114TET1/DTA143TET1/
C
B
DTA143ZET1/DTA124XET1/DTA143EET1
Output Voltage (on)
(V = 5.0 V, V = 2.5 V, R = 1.0 kΩ)
V
OL
DTA114EET1
DTA124EET1
DTA114YET1
DTA114TET1
DTA143TET1
DTA123EET1
DTA143EET1
DTA143ZET1
DTA124XET1
DTA123JET1
DTA144EET1
DTA115EET1
DTA144WET1
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
CC
B
L
(V = 5.0 V, V = 3.5 V, R = 1.0 kΩ)
CC
B
L
(V = 5.0 V, V = 5.5 V, R = 1.0 kΩ)
CC
B
L
(V = 5.0 V, V = 4.0 V, R = 1.0 kΩ)
CC
B
L
Output Voltage (off) (V = 5.0 V, V = 0.5 V, R = 1.0 kΩ)
V
OH
4.9
–
–
Vdc
CC
B
L
(V = 5.0 V, V = 0.25 V, R = 1.0 kΩ)
DTA114TET1
CC
B
L
DTA143TET1
DTA123EET1
DTA143EET1
3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
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3
DTA114EET1 SERIES
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Input Resistor
DTA114EET1
DTA124EET1
DTA144EET1
DTA114YET1
DTA114TET1
DTA143TET1
DTA123EET1
DTA143EET1
DTA143ZET1
DTA124XET1
DTA123JET1
DTA115EET1
DTA144WET1
R1
7.0
15.4
32.9
7.0
7.0
3.3
1.5
3.3
3.3
10
22
47
10
10
4.7
2.2
4.7
4.7
22
2.2
100
47
13
28.6
61.1
13
13
6.1
2.9
6.1
6.1
28.6
2.86
130
61.1
kΩ
15.4
1.54
70
32.9
Resistor Ratio
DTA114EET1/DTA124EET1/DTA144EET1/
DTA115EET1
R /R
1 2
0.8
0.17
–
1.0
0.21
–
1.0
0.1
0.47
0.047
2.1
1.2
0.25
–
DTA114YET1
DTA114TET1/DTA143TET1
DTA123EET1/DTA143EET1
DTA143ZET1
DTA124XET1
DTA123JET1
0.8
1.2
0.055
0.38
0.038
1.7
0.185
0.56
0.056
2.6
DTA144WET1
250
200
150
100
R
= 600°C/W
50
0
θ
JA
-ā50
0
50
100
150
T , AMBIENT TEMPERATURE (°C)
A
Figure 1. Derating Curve
1.0
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01
0.1
t, TIME (s)
1.0
10
100
1000
Figure 2. Normalized Thermal Response
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DTA114EET1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS – DTA114EET1
1000
1
V
CE
= 10 V
I /I = 10
C B
T Ă=Ă75°C
A
T Ă=Ă-25°C
A
25°C
-25°C
ā0.1
100
25°C
75°C
ā0.01
10
ā20
I , COLLECTOR CURRENT (mA)
1
10
100
0
ā40
50
I , COLLECTOR CURRENT (mA)
C
C
Figure 3. VCE(sat) versus IC
Figure 4. DC Current Gain
4
3
100
10
1
25°C
75°C
f = 1 MHz
l = 0 V
E
T Ă=Ă-25°C
A
T = 25°C
A
2
1
0
ā0.1
ā0.01
V = 5 V
O
ā0.001
0
10
20
30
40
50
0
1
ā2
3
ā4
ā5
ā6
ā7
ā8
ā9
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 5. Output Capacitance
Figure 6. Output Current versus Input Voltage
100
V = 0.2 V
O
T Ă=Ă-25°C
A
10
25°C
75°C
1
ā0.1
0
10
ā20
ā30
ā40
ā50
I , COLLECTOR CURRENT (mA)
C
Figure 7. Input Voltage versus Output Current
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DTA114EET1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS – DTA124EET1
1000
10
V
CE
= 10 V
I /I = 10
C B
T Ă=Ă75°C
A
1
25°C
25°C
T Ă=Ă-25°C
A
-25°C
100
75°C
ā0.1
10
0.01
1
10
I , COLLECTOR CURRENT (mA)
0
ā20
ā40
ā50
100
I , COLLECTOR CURRENT (mA)
C
C
Figure 8. VCE(sat) versus IC
Figure 9. DC Current Gain
4
3
2
100
25°C
75°C
f = 1 MHz
l = 0 V
T Ă=Ă-25°C
A
E
10
1
T = 25°C
A
ā0.1
1
0
ā0.01
V = 5 V
O
ā0.001
0
1
ā2
ā3
ā4
ā5
ā6
ā7
ā8
ā9
10
0
10
20
30
40
50
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 10. Output Capacitance
Figure 11. Output Current versus Input Voltage
100
V = 0.2 V
O
T Ă=Ă-25°C
A
10
25°C
75°C
1
ā0.1
0
10
ā20
ā30
ā40
ā50
I , COLLECTOR CURRENT (mA)
C
Figure 12. Input Voltage versus Output Current
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DTA114EET1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS – DTA144EET1
1
1000
I /I = 10
C B
T Ă=Ă75°C
A
T Ă=Ă-25°C
A
25°C
25°C
75°C
-25°C
100
ā0.1
ā0.01
10
0
10
20
30
40
1
10
I , COLLECTOR CURRENT (mA)
100
I , COLLECTOR CURRENT (mA)
C
C
Figure 13. VCE(sat) versus IC
Figure 14. DC Current Gain
1
100
25°C
-25°C
T Ă=Ă75°C
A
f = 1 MHz
l = 0 V
E
0.8
10
1
T = 25°C
A
0.6
0.4
ā0.1
ā0.01
0.2
0
V = 5 V
O
ā0.001
0
10
20
30
40
50
0
1
2
3
ā4
ā5
ā6
ā7
ā8
Ă9
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 15. Output Capacitance
Figure 16. Output Current versus Input Voltage
100
V = 0.2 V
O
T Ă=Ă-25°C
A
25°C
75°C
10
1
Ă0.1
0
10
ā20
ā30
ā40
ā50
I , COLLECTOR CURRENT (mA)
C
Figure 17. Input Voltage versus Output Current
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DTA114EET1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS – DTA114YET1
1
180
T Ă=Ă75°C
A
I /I = 10
C B
V
CE
= 10 V
160
140
120
100
80
T Ă=Ă-25°C
A
25°C
-25°C
25°C
0.1
75°C
0.01
60
40
20
0.001
0
0
20
40
60
80
1
2
4
6
8
10 15 20 40 50 60 70 80 90 100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 18. VCE(sat) versus IC
Figure 19. DC Current Gain
4.5
4
100
10
1
T Ă=Ă75°C
f = 1 MHz
l = 0 V
A
25°C
E
3.5
3
T = 25°C
A
-25°C
2.5
2
1.5
1
0.5
0
V = 5 V
O
0
2
4
6
8
10 15 20 25 30 35 40 45 50
0
2
4
6
8
10
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 20. Output Capacitance
Figure 21. Output Current versus Input Voltage
10
+12 V
V = 0.2 V
O
25°C
T Ă=Ă-25°C
A
75°C
Typical Application
for PNP BRTs
1
LOAD
0.1
0
10
20
30
40
50
I , COLLECTOR CURRENT (mA)
C
Figure 22. Input Voltage versus Output Current
Figure 23. Inexpensive, Unregulated Current Source
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DTA114EET1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS — DTA115EET1
1
1000
75°C
T = –25°C
A
100
25°C
0.1
75°C
25°C
10
1
–25°C
V
CE
= 10 V
I /I = 10
C
B
0.01
0
1
2
3
4
5
6
7
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 24. Maximum Collector Voltage versus
Collector Current
Figure 25. DC Current Gain
100
10
1.2
25°C
75°C
1.0
0.8
0.6
0.4
f = 1 MHz
I
E
= 0 V
T = –25°C
A
T = 25°C
A
1
0.2
0
V
= 5 V
8
O
0.1
0
1
2
3
4
5
6
7
9
10
0
10
20
30
40
50
60
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 26. Output Capacitance
Figure 27. Output Current versus Input Voltage
100
T = –25°C
A
25°C
10
V
O
= 0.2 V
75°C
1
0
2
4
6
8
10 12
14
16 18 20
I , COLLECTOR CURRENT (mA)
C
Figure 28. Input Voltage versus Output Current
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DTA114EET1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS — DTA144WET1
1
1000
75°C
T = –25°C
A
75°C
T = –25°C
A
0.1
100
25°C
25°C
V
CE
= 10 V
I /I = 10
C
B
0.01
10
0
5
10 15
20 25 30 35 40 45 50
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 29. Maximum Collector Voltage versus
Collector Current
Figure 30. DC Current Gain
100
10
1
1.4
75°C
f = 1 MHz
1.2
1.0
0.8
0.6
0.4
I
E
= 0 V
T = –25°C
A
T = 25°C
A
25°C
0.1
0.01
V
O
= 5 V
0.2
0
0.001
0
1
2
3
4
5
6
7
8
9
10 11
0
10
20
30
40
50
60
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
in
Figure 31. Output Capacitance
Figure 32. Output Current versus Input Voltage
100
V
O
= 0.2 V
T = –25°C
A
10
75°C
25°C
1
0
5
10
15
20
25
I , COLLECTOR CURRENT (mA)
C
Figure 33. Input Voltage versus Output Current
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DTA114EET1 SERIES
MINIMUM RECOMMENDED FOOTPRINTS FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.5 min. (3x)
TYPICAL
SOLDERING PATTERN
Unit: mm
1.4
SOT–416/SC–75 POWER DISSIPATION
The power dissipation of the SOT–416/SC–75 is a
function of the pad size. This can vary from the minimum
pad size for soldering to the pad size given for maximum
power dissipation. Power dissipation for a surface mount
into the equation for an ambient temperature T of 25°C,
one can calculate the power dissipation of the device which
in this case is 200 milliwatts.
A
150°C – 25°C
PD
=
= 200 milliwatts
device is determined by T
, the maximum rated
J(max)
600°C/W
junction temperature of the die, R , the thermal
θJA
The 600°C/W assumes the use of the recommended
footprint on a glass epoxy printed circuit board to achieve a
power dissipation of 200 milliwatts. Another alternative
would be to use a ceramic substrate or an aluminum core
board such as Thermal Clad . Using a board material such
as Thermal Clad, a higher power dissipation can be
achieved using the same footprint.
resistance from the device junction to ambient; and the
operating temperature, T . Using the values provided on
A
the data sheet, P can be calculated as follows:
D
TJ(max) – TA
PD
=
Rθ
JA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
• Always preheat the device.
• The delta temperature between the preheat and
soldering should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference should be a maximum of 10°C.
• The soldering temperature and time should not exceed
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the
maximum temperature gradient should be 5°C or less.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied
during cooling.
* Soldering a device without preheating can cause
excessive thermal shock and stress which can result in
damage to the device.
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DTA114EET1 SERIES
SOLDER STENCIL GUIDELINES
Prior to placing surface mount components onto a printed
or stainless steel with a typical thickness of 0.008 inches.
The stencil opening size for the surface mounted package
should be the same as the pad size on the printed circuit
board, i.e., a 1:1 registration.
circuit board, solder paste must be applied to the pads. A
solder stencil is required to screen the optimum amount of
solder paste onto the footprint. The stencil is made of brass
TYPICAL SOLDER HEATING PROFILE
For any given circuit board, there will be a group of
control settings that will give the desired heat pattern. The
operator must set temperatures for several heating zones,
and a figure for belt speed. Taken together, these control
settings make up a heating “profile” for that particular
circuit board. On machines controlled by a computer, the
computer remembers these profiles from one operating
session to the next. Figure 34 shows a typical heating
profile for use when soldering a surface mount device to a
printed circuit board. This profile will vary among
soldering systems but it is a good starting point. Factors that
can affect the profile include the type of soldering system in
use, density and types of components on the board, type of
solder used, and the type of board or substrate material
being used. This profile shows temperature versus time.
The line on the graph shows the actual temperature that
might be experienced on the surface of a test board at or
near a central solder joint. The two profiles are based on a
high density and a low density board. The Vitronics
SMD310 convection/infrared reflow soldering system was
used to generate this profile. The type of solder used was
62/36/2 Tin Lead Silver with a melting point between
177–189°C. When this type of furnace is used for solder
reflow work, the circuit boards and solder joints tend to
heat first. The components on the board are then heated by
conduction. The circuit board, because it has a large surface
area, absorbs the thermal energy more efficiently, then
distributes this energy to the components. Because of this
effect, the main body of a component may be up to 30
degrees cooler than the adjacent solder joints.
STEP 5
HEATING
ZONES 4 & 7
SPIKE"
STEP 6 STEP 7
VENT COOLING
STEP 1
PREHEAT
ZONE 1
RAMP"
STEP 2
VENT
STEP 3
HEATING
STEP 4
HEATING
ZONES 3 & 6
SOAK"
SOAK" ZONES 2 & 5
RAMP"
205° TO 219°C
PEAK AT
SOLDER JOINT
200°C
150°C
170°C
DESIRED CURVE FOR HIGH
MASS ASSEMBLIES
160°C
150°C
SOLDER IS LIQUID FOR
40 TO 80 SECONDS
(DEPENDING ON
140°C
100°C
MASS OF ASSEMBLY)
100°C
50°C
DESIRED CURVE FOR LOW
MASS ASSEMBLIES
TIME (3 TO 7 MINUTES TOTAL)
T
MAX
Figure 34. Typical Solder Heating Profile
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12
DTA114EET1 SERIES
Notes
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13
DTA114EET1 SERIES
Notes
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14
DTA114EET1 SERIES
PACKAGE DIMENSIONS
SC–75/SOT–416
CASE 463–01
ISSUE B
–A–
NOTES:
S
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
2
3
MILLIMETERS
DIM MIN MAX
INCHES
G
–B–
MIN
MAX
0.031
0.071
0.035
0.012
1
A
B
C
D
G
H
J
0.70
1.40
0.60
0.15
0.80 0.028
1.80 0.055
0.90 0.024
0.30 0.006
D 3 PL
0.20 (0.008)
M
B
0.20 (0.008) A
K
1.00 BSC
0.039 BSC
---
0.10
1.45
0.10
0.10
---
0.004
0.010
0.069
0.008
0.25 0.004
1.75 0.057
0.20 0.004
K
L
S
0.50 BSC
0.020 BSC
J
C
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
L
H
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15
DTA114EET1 SERIES
Thermal Clad is a registered trademark of the Bergquist Company
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For additional information, please contact your local
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DTA114EET1/D
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