DF200R12KL-A [ETC]
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 200A I(C) | M:HL093HW048 ; 晶体管| IGBT | N -CHAN | 1.2KV V( BR ) CES | 200A I(C ) | M : HL093HW048\n![DF200R12KL-A](http://pdffile.icpdf.com/pdf1/p00001/img/icpdf/DF200_4163_icpdf.jpg)
型号: | DF200R12KL-A |
厂家: | ![]() |
描述: | TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 200A I(C) | M:HL093HW048
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文件: | 总1页 (文件大小:218K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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DF200R12W1H3B27BOMA1
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, MODULE-18
INFINEON
![](http://pdffile.icpdf.com/pdf2/p00299/img/page/DF200R12W1H3_1809619_files/DF200R12W1H3_1809619_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00299/img/page/DF200R12W1H3_1809619_files/DF200R12W1H3_1809619_2.jpg)
DF200R12W1H3FB11BOMA1
Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-18
INFINEON
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