CPH6603 [ETC]
;型号: | CPH6603 |
厂家: | ETC |
描述: |
|
文件: | 总4页 (文件大小:35K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Ordering number : ENN7146
P-Channel Silicon MOSFET
CPH6603
Ultrahigh-Speed Switching Applications
Features
Package Dimensions
unit : mm
•
Low ON-resistance.
• Ultrahigh-speed switching.
• 4V drive.
2202
[CPH6603]
0.15
2.9
5
6
1
4
0.05
2
3
0.95
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
0.4
Specifications
SANYO : CPH6
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Symbol
Conditions
Ratings
--30
Unit
V
V
DSS
GSS
Gate-to-Source Voltage
Drain Current (DC)
V
±20
V
I
--1.5
A
D
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
I
PW≤10µs, duty cycle≤1%
--6.0
A
DP
P
Mounted on a ceramic board (900mm2✕0.8mm)1unit
0.9
W
°C
°C
D
Tch
150
Tstg
--55 to +150
Electrical Characteristics at Ta=25°C
Ratings
Parameter
Symbol
Conditions
Unit
min
--30
typ
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=--1mA, V =0
V
µA
µA
V
(BR)DSS
D GS
I
V
V
V
V
=--30V, V =0
GS
--1
DSS
GSS
DS
GS
DS
DS
I
=±16V, V =0
DS
±10
V (off)
GS
=--10V, I =--1mA
--1.2
1.0
--2.6
D
Forward Transfer Admittance
yfs
=--10V, I =--0.8A
1.5
S
D
R
(on)1
I
=--0.8A, V =--10V
GS
190
330
250
460
mΩ
mΩ
DS
D
Static Drain-to-Source On-State Resistance
R
DS
(on)2
I
D
=--0.4A, V =--4V
GS
Marking : FN
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Sem iconductor Com pany
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
11502 TS IM TA-3453 No.7146-1/4
CPH6603
Continued from preceding page.
Ratings
typ
185
30
Parameter
Symbol
Conditions
Unit
min
max
Input Capacitance
Ciss
Coss
Crss
V
V
V
=--10V, f=1MHz
=--10V, f=1MHz
=--10V, f=1MHz
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
DS
DS
DS
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
20
t (on)
d
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
7
t
r
4
Turn-OFF Delay Time
Fall Time
t (off)
d
22
t
8
f
Total Gate Charge
Qg
Qgs
Qgd
V
V
V
=--10V, V =--10V, I =--1.5A
GS
4.7
0.8
0.7
--0.88
DS
DS
DS
D
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
=--10V, V =--10V, I =--1.5A
GS
D
=--10V, V =--10V, I =--1.5A
GS
D
V
SD
I =--1.5A, V =0
GS
--1.5
S
Electrical Connection
Switching Time Test Circuit
V
6
5
4
V
= --15V
IN
DD
0V
--10V
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
I
= --0.8A
D
V
IN
R =18.7Ω
L
D
V
OUT
PW=10µs
D.C.≤1%
G
Top view
1
2
3
CPH6603
P. G
50Ω
S
I
-- V
I
-- V
D GS
D
DS
--2.0
--1.8
--1.6
--1.4
--2.0
--1.8
--1.6
--1.4
V
= --10V
DS
--1.2
--1.0
--0.8
--0.6
--0.4
--1.2
--1.0
--0.8
--0.6
--0.4
--0.2
0
--0.2
0
0
--0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
0
--0.5
--1.0
--1.5
--2.0
--2.5
--3.0
--3.5
--4.0
Gate-to-Source Voltage, V
GS
-- V
IT02666
Drain-to-Source Voltage, V
-- V
IT04057
DS
R
DS
(on) -- V
R
DS
(on) -- Ta
GS
800
700
600
500
400
300
200
Ta=25°C
600
500
--0.8A
I
= --0.4A
D
400
300
200
100
0
100
0
0
--1
--2
--3
--4
--5
--6
--7
--8
--9
--10
--60 --40 --20
0
20
40
60
80 100 120 140 160
Gate-to-Source Voltage, V
GS
-- V
Ambient Temperature, Ta -- °C
IT04058
IT04059
No.7146-2/4
CPH6603
yfs -- I
I
-- V
F SD
D
3
2
--10
7
5
V
= --10V
V
=0
DS
GS
3
2
1.0
--1.0
7
5
7
5
3
2
--0.1
7
5
3
2
3
2
0.1
--0.01
--0.01
2
3
5
7
2
3
5
7
2
3
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
--0.1
--1.0
IT02669
Drain Current, I -- A
D
IT02670
Diode Forward Voltage, V
-- V
SW Time -- I
Ciss, Coss, Crss S-D- V
D
DS
100
1000
f=1MHz
V
= --15V
= --10V
DD
7
5
7
V
GS
5
3
2
3
2
Ciss
10
100
t (on)
d
7
5
7
5
3
2
3
2
1.0
10
3
0
0
5
7
2
3
5
7
2
3
0
--5
--10
--15
--20
--25
--30
IT02671
--0.1
--1.0
IT02672
Drain Current, I -- A
Drain-to-Source Voltage, V
-- V
DS
D
V
-- Qg
A S O
GS
--10
7
5
--10
--8
I
= --6A
<10µs
V
= --10V
= --1.5A
DP
DS
I
D
3
2
I
= --1.5A
D
--1.0
7
5
--6
3
2
Operation in this area
is limited by R (on).
DS
--4
--0.1
7
5
--2
0
3
2
Ta=25°C
Single pulse
Mounted on a ceramic board(900mm2✕0.8mm)1unit
--0.01
--0.1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
2
3
5
7
2
3
5
7
2
3
5
--1.0
--10
Total Gate Charge, Qg -- nC
Drain-to-Source Voltage, V
-- V
DS
IT04060
IT04061
P
-- Ta
D
1.0
0.9
0.8
0.6
0.4
0.2
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT04062
No.7146-3/4
CPH6603
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of January, 2002. Specifications and information herein are subject
to change without notice.
PS No.7146-4/4
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