CNB1001/CNB1002 [ETC]
CNB1001. CNB1002 - Reflective Photosensors ; CNB1001 。 CNB1002 - 反光光敏\n
| 型号： | CNB1001/CNB1002 |
| 厂家： | 
ETC |
| 描述： | CNB1001. CNB1002 - Reflective Photosensors
|
| 文件： | 总3页 (文件大小：67K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Reflective Photosensors (Photo Reflectors)
CNB1001, CNB1002
Reflective Photosensors
Unit : mm
0.15
3.4
1.8
Overview
+0.1
0.05
–0.05
CNB1001 and CNB1002 are a small, thin SMD-compatible
reflective photosensor consisting of a high efficiency GaAs infrared
light emitting diode which is integrated with a high sensitivity Si
phototransistor in a single resin package.
1
3
C0.5
Chip
center
2
4
0.85
Features
4-0.7
4-0.5
1.5
Reflow-compatible reflective photosensor
Ultraminiature, thin type : 2.7 × 3.4 mm (height : 1.5 mm)
Visible light cutoff resin is used
CNB1001
CNB1002
Absolute Maximum Ratings (Ta = 25˚C)
1
2
3
4
3
4
1
2
Parameter
Symbol Ratings Unit
Pin connection
Pin connection
1: Anode 3: Emitter
2: Cathode 4: Collector
1: Emitter 3: Anode
2: Collector 4: Cathode
Reverse voltage (DC)
Forward current (DC)
Power dissipation
Collector current
VR
6
V
mA
mW
mA
V
Input (Light
IF
50
75
20
35
6
(Note) Tolerance unless otherwise specified is ±0.2
emitting diode)
*1
PD
IC
Collector to emitter voltage VCEO
Output (Photo
transistor)
Emitter to collector voltage VECO
V
*1 Input power derating ratio is
1.0 mW/˚C at Ta ≥ 25˚C.
*2 Output power derating ratio is
*2
Collector power dissipation PC
75
mW
˚C
Operating ambient temperature
Topr –25 to +85
Temperature
Storage temperature
Tstg – 40 to +100 ˚C
1.0 mW/˚C at Ta ≥ 25˚C.
Electrical Characteristics (Ta = 25˚C)
Parameter
Symbol
VF
Conditions
min
typ
max
1.4
Unit
V
Forward voltage (DC)
Reverse current (DC)
IF = 20mA
VR = 3V
1.2
Input
characteristics
IR
10
µA
nA
µA
nA
V
Output characteristics Collector cutoff current
ICEO VCE = 20V
100
160
100
0.4
*1
Collector current
IC
VCC = 2V, IF = 4mA. RL = 100Ω, d = 1mm
VCC = 2V, IF = 4mA, RL = 100Ω
23
Leakage current
ID
Transfer
Collector to emitter saturation voltage VCE(sat) IF = 20mA, IC = 0.1mA
characteristics
tr*2 VCC = 5V, IC = 0.1mA,
tf*2 RL = 1000Ω
30
40
Response time
µs
*1
*2
Output Current (IC) measurement
method (see figure below.)
Response time measurement
circuit (see figure below.)
Color indication of classifications
tr : Rise time
tf : Fall time
Class
IC (µA)
23 to 50
41 to 90
74 to 160
Color
Orange
White
Glass plate
Evaporated Al
Glass plate
Evaporated Al
Q
R
S
d = 1mm
d = 1mm
Sig.IN
Sig.OUT
90%
10%
Light blue
RL
IF
IC
VCC
Sig.
Sig.IN
50Ω
OUT
VCC
RL
tr
tf
Input and output are handled electrically.
This product is not designed to withstand radiation.
1
CNB1001,CNB1002
Reflective Photosensors (Photo Reflectors)
IF , IC — Ta
IF — VF
IC — IF
60
60
50
40
30
20
10
0
800
600
400
200
0
Ta = 25˚C
VCC = 5V
Ta = 25˚C
RL = 100Ω
d = 1mm
IF
50
40
30
IC
20
10
0
– 25
0
20
40
60
80
100
0
0.4
0.8
1.2
1.6
2.0
2.4
0
8
16
24
Ambient temperature Ta (˚C )
Forward voltage VF (V)
Forward current IF (mA)
VF — Ta
IC — VCE
IC — Ta
1.6
600
500
400
300
200
100
0
160
120
80
40
0
d = 1mm
Ta = 25˚C
VCC = 2V
IF = 4mA
RL = 100Ω
IF = 50mA
1.2
0.8
0.4
0
IF = 20mA
15mA
10mA
1mA
10mA
8mA
6mA
4mA
2mA
– 40 – 20
0
20
40
60
80 100
0
1
2
3
4
5
6
7
8
– 40 – 20
0
20
40
60
80 100
Ambient temperature Ta (˚C )
Collector to emitter voltage VCE (V)
Ambient temperature Ta (˚C )
I
CEO — Ta
tr , tf — IC
IC — d
10
1
10 3
10 2
100
80
60
40
20
0
VCE = 10V
VCE = 2V
Ta = 25˚C
IF = 4mA
V
CC = 5V
Ta = 25˚C
: tr
: tf
RL = 2kΩ
d
10 –1
10 –2
10 –3
10 –4
1kΩ
10
1
100Ω
10–1
– 40 – 20
0
20
40
60
80 100
10 –2
10 –1
Collector current IC (mA)
1
10
0
2
4
6
8
10
Ambient temperature Ta (˚C )
Distance d (mm)
2
Caution for Safety
Gallium arsenide material (GaAs) is used
in this product.
Therefore, do not burn, destroy, cut, crush, or chemi-
cally decompose the product, since gallium arsenide
material in powder or vapor form is harmful to human
health.
Observe the relevant laws and regulations when dispos-
ing of the products. Do not mix them with ordinary in-
dustrial waste or household refuse when disposing of
GaAs-containing products.
DANGER
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the
products or technologies described in this material and controlled under the "Foreign Exchange and Foreign
Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting
of relative rights, or the granting of any license.
(3) The products described in this material are intended to be used for standard applications or general electronic
equipment (such as office equipment, communications equipment, measuring instruments and household ap-
pliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion
equipment, life support systems and safety devices) in which exceptional quality and reliability are required,
or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
• Any applications other than the standard applications intended.
(4) The products and product specifications described in this material are subject to change without notice for
reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the prod-
ucts, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifi-
cations satisfy your requirements.
(5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the
range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for
any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, redundant design is recommended, so that
such equipment may not violate relevant laws or regulations because of the function of our products.
(6) When using products for which dry packing is required, observe the conditions (including shelf life and after-
unpacking standby time) agreed upon when specification sheets are individually exchanged.
(7) No part of this material may be reprinted or reproduced by any means without written permission from our
company.
Please read the following notes before using the datasheets
A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconduc-
tor products best suited to their applications.
Due to modification or other reasons, any information contained in this material, such as available product
types, technical data, and so on, is subject to change without notice.
Customers are advised to contact our semiconductor sales office and obtain the latest information before
starting precise technical research and/or purchasing activities.
B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always
the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any
liability for any damages arising from any errors etc. that may appear in this material.
C. These materials are solely intended for a customer's individual use.
Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or
distributing this material to a third party, via the Internet or in any other way, is prohibited.
2001 MAR
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