CEK01N6 [ETC]
600V N Channel MOS ; 600V N沟道MOS\n
| 型号： | CEK01N6 |
| 厂家： | 
ETC |
| 描述： | 600V N Channel MOS
|
| 文件： | 总5页 (文件大小：52K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CEK01N6
PRELIMINARY
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
D
600V , 0.25A , RDS(ON)=7.5
@VGS=10V.
Ω
Super high dense cell design for low RDS(ON)
High power and current handling capability.
TO-92 Package.
.
TO-92
G
G
D
S
S
ABSOLUTE MAXIMUM RATINGS (T =25 C unless otherwise noted)
A
Limit
600
Ć30
0.25
1
Unit
V
Parameter
Symbol
Drain-Source Voltage
V
DS
V
GS
V
Gate-Source Voltage
I
D
A
A
Drain Current-Continuous
-Pulsed
I
DM
Drain-Source Diode Forward Current
Maximum Power Dissipation
A
I
S
0.25
1.5
P
D
W
Operating Junction and Storage
Temperature Range
T
J
, TSTG
-55 to 150
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
C
/W
RįJA
85
1
CEK01N6
ELECTRICAL CHARACTERISTICS (T =25 C unless otherwise noted)
C
Typ Max
Parameter
Condition
Min
Unit
Symbol
DRAIN-SOURCE AVALANCHE RATINGa
Single Pulse Drain-Source
Avalanche Energy
V
DD =50V, L=60mH
mJ
A
E
AS
100
R =9.1
G
Ω
Maximum Drain-Source
Avalanche Current
I
AS
0.25
OFF CHARACTERISTICS
V
GS = 0V,I
D
= 250µA
Drain-Source Breakdown Voltage
600
V
BVDSS
µA
25
I
DSS
GSS
V
DS = 600V, VGS = 0V
Zero Gate Voltage Drain Current
Gate-Body Leakage
VGS
=
30V, VDS = 0V
Ć
I
nA
100
Ć
ON CHARACTERISTICSa
VGS(th)
2
4
V
Gate Threshold Voltage
V
DS = VGS, I
D
= 250µA
R
DS(ON)
5.5
0.7
Ω
Drain-Source On-State Resistance
7.5
V
GS =10V, I
D
= 0.125A
gFS
Forward Transconductance
S
VDS = 50V, I
D
= 0.125A
SWITCHING CHARACTERISTICSb
Turn-On Delay Time
ns
ns
ns
ns
nC
6
t
D(ON)
18
50
V
DD = 300V,
= 1A,
I
V
D
Rise Time
25
t
r
GS = 10V
Turn-Off Delay Time
Fall Time
t
D(OFF)
30
50
12
10
20
8
R
GEN=25
Ω
t
f
Q
g
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS =480V, I
D
= 1A,
Q
gs
gd
nC
nC
1.3
3
VGS =10V
Q
2
CEK01N6
ELECTRICAL CHARACTERISTICS (T
C
=25 C unless otherwise noted)
Typ Max
Unit
Parameter
DYNAMIC CHARACTERISTICSb
Condition
Min
Symbol
200
30
Input Capacitance
P
F
C
ISS
OSS
RSS
V
DS =25V, VGS = 0V
P
P
F
F
Output Capacitance
C
f =1.0MH
Z
Reverse Transfer Capacitance
C
10
DRAIN-SOURCE DIODE CHARACTERISTICS a
Diode Forward Voltage
V
V
SD
V
GS = 0V, Is =0.25A
1.5
Notes
ś
ś
a.Pulse Test:Pulse Width 300ijs, Duty Cycle 2%.
b.Guaranteed by design, not subject to production testing.
1.2
VGS=10,9,8,7V
1.0
0.8
150 C
0.1
0.6
VGS=6V
0.4
VGS=5V
-55 C
1.VDS=40V
2.Pulse Test
0.2
25 C
0.01
0
2
4
10
8
6
0
1
2
3
4
5
6
VDS, Drain-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
3
CEK01N6
3.0
2.5
300
ID=0.125A
VGS=10V
250
Ciss
2.0
1.5
200
150
Coss
100
1.0
50
0.5
0.0
Crss
0
25
0
5
10
15
20
-100
-50
0
50
100
200
150
TJ, Junction Temperature( C)
VDS, Drain-to Source Voltage (V)
Figure 4. On-Resistance Variation with
Temperature
Figure 3. Capacitance
1.15
1.30
1.20
ID=250͋A
V
DS=VGS
=250͋A
1.10
I
D
1.10
1.0
1.05
1.00
0.90
0.95
0.90
0.85
0.80
0.70
0.60
-50 -25
0
25 50 75 100 125 150
-50 -25
0
25 50 75 100 125 150
Tj, Junction Temperature ( C)
Tj, Junction Temperature ( C)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
2
1
V
GS=0V
V
DS=50V
1
0.75
0.5
0.25
0
0.1
0
0.05
0.2
0.1
0.15
0.4
0.6
1.2
1.0
0.8
IDS, Drain-Source Current (A)
VSD, Body Diode Forward Voltage (V)
Figure 7. Transconductance Variation
with Drain Current
Figure 8. Body Diode Forward Voltage
Variation with Source Current
4
CEK01N6
1
0
15
12
10
10
V
=480V
I
D
DS=1A
it
im
L
1ms
S(ON)
10ms
D
R
9
6
100ms
-1
-2
10
10
1s
DC
3
0
T
A
=25 C
Tj=150 C
Single Pulse
-3
10
3
1
2
0
12
10
10
0
3
6
9
10
10
Qg, Total Gate Charge (nC)
VDS, Drain-Source Voltage (V)
Figure 9. Gate Charge
Figure 10. Maximum Safe
Operating Area
VDD
on
t
toff
d(off)
r
t
t
d(on)
RL
t
f
t
VIN
90%
90%
D
OUT
V
OUT
V
VGS
10%
10%
INVERTED
RGEN
G
90%
50%
50%
S
IN
V
10%
PULSE WIDTH
Figure 12. Switching Waveforms
Figure 11. Switching Test Circuit
10 0
D=0.5
0.2
10-1
0.1
0.05
0.02
DM
P
1
t
0.01
10-2
2
t
1. RįJA (t)=r (t) * RįJA
2. RįJA=See Datasheet
3. TJM-TA = P* RįJA (t)
4. Duty Cycle, D=t1/t2
Single Pulse
10-3
10 2
10-4
10-3
10-2
10-1
10 0
Square Wave Pulse Duration (sec)
Figure 13. Normalized Thermal Transient Impedance Curve
5
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