C2304 [ETC]
MMDS / ISM / S-Band Downconverter; MMDS / ISM / S波段下变频器型号: | C2304 |
厂家: | ETC |
描述: | MMDS / ISM / S-Band Downconverter |
文件: | 总4页 (文件大小:81K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Pacific Wireless
2844 Mar Vista Dr. Suite 101
Aptos, CA 95003
TEL (831) 684-2474
C2304..
DATA SHEET
FAX (831) 684-2494
www.pacwireless.com
MMDS / ISM / S-Band Downconverter
1800 to 4800 MHz Operation
RF IN
VDD
LO IN
Features
· 1800 to 4800 MHz RF
· 10 to 900 MHz IF
· 26 dB Gain, 4dB Noise Figure
· Single 5V Supply
IF OUT
· 27 dBm Output IP3
· Separate RF AMP, MIXER/LO AMP and IF AMP cells.
· 75 ohm IF output impedance
IF/RF
IF IN
IF BIAS
RF OUT
Applications
· 2.4 GHz ISM Band Applications
· MMDS Downconverters
· Wireless Bridges
· Wireless LANS and WANS
· Point to Multipoint Receivers
· 2.4GHz Consumer Applications
· Bluetooth Applications
· Upconverters
· Wireless Local Loop Systems
· S Band Receivers
Description
The C2304 is a flexible high intercept and high gain down conversion GaAs MMIC packaged in a compact 14
pin SOIC package. Each sub-circuit is brought out on separate pins to allow for custom filtering on the IF/RF
mixer interstage or custom matching for specific bands. Broadband parallel feedback networks are used on the
gain and LO driver stages and the mixer is a singly balanced, two diode type mixer. The FET source of the IF
amplifier stage (IF BIAS) is accessible for AC bypassing which allows for current reduction with DC source
degeneration. The gain and DC current is broken up as follows: RF AMP gain = 14dB, current = 22 mA; LO
AMP gain = 11dB, current = 28ma; IF AMP gain = 18dB, current = 60 mA, MIXER conversion loss = -6dB.
Simple external matching circuits can be implemented for all ports to achieve VSWR’s <2:1 over moderate
bandwidths of less than 400MHz.
Electrical Characteristics
Typical Specifications for VDD=5.0V TA=+25oC
Minimum and Maximum specifications are guaranteed over RF range 2.5GHz – 2.68GHz
Tested in 50W input / 75W output system, LO=2.278GHz at 5dBm, using matching circuit shown on page 3.
Parameter
Conversion Gain
Symbol
G
Conditions
LO=5dBm
Min
24.7
Typ
26
Max
27.3
Units
dB
Single Sideband Noise Figure
Output IP3
RF Input Return Loss
IF Output Return Loss
NF
IP3
S11
S22
LO=2.278GHz
LO=5dBm
50W input ref.
75W output ref.
4
27
-12
-11
dB
dBm
dB
dB
Page 2
LO Input Return Loss
C2304
S11
P1dB
IDD
ISOr-i
ISOl-i
ISOl-r
VSWR
50W input ref.
LO=5dBm
-2
17
110
32
13
24
dBm
dBm
mA
dB
Output Power at 1dB Comp.
Operating Drain Current
RF OUT to IF/RF Isolation
LO IN to IF OUT Isolation
LO IN to RF IN Isolation
Load VSWR for Input/Output
Stability1
LO=5dBm
LO=5dBm
LO=5dBm
With network on page 3
dB
DB
10:1
Thermal Resistance
qJC
Junction to GND lead
75
°C/W
1 As a separate circuit the IF AMP is conditionally stable for VSWR < 5:1 over 1.5-3.6GHz
Typical Performance Characteristics
(Obtained using external circuit shown on p. 3)
Conversion Gain vs. Temperature
LO = 2.278GHz @ 5dBm
Conversion Gain and Output IP3 vs. LO Power
F1=2.59 GHz and F2=2.596 GHz
28
26
24
30
+25C
+85C
-40C
29
28
27
22
20
26
25
24
IP3
Conv. gain
18
16
23
22
-6
-4
-2
0
2
4
6
8
10
2.45
2.5
2.55
2.6
2.65
2.7
LO Power (dBm)
RF Freq (GHz)
IF Output Return Loss in 75 ohms
LO = 5dBm
RF Input Return Loss and RFOUT to IF/RF Isolation
0
-5
0
-5
-10
-15
-20
-25
-30
-35
RF Input Return loss
RFout to RF/IF Isolation
-10
-15
-20
-25
200
220 240
260 280
300 320
Freq (MHz)
340 360
380 400
420
2.5
2.55
2.6
2.65
2.7
Freq (GHz)
Absolute Maximum Ratings
Characteristic
Symbol
Value
+8
Units
V
Drain Voltage
VDD1,2
Bias Current
RF Input Power
IDS
PIN
PDISS
VSWR
TOP
200
+18
1.0
mA
dBm
W
Power Dissipation
Load VSWR
Operating Temperature
Junction Temperature
Storage Temperature Range
10:1
-40 to +85
150
-65 to +150
°C
°C
°C
TJ
TSTG
Caution: Operating beyond specified rating for any of these parameters may cause permanent damage to the device.
Specifications Subject to Change Without Notice
C2304Spec
Rev 6 12/30/99
Page 3
C2304
Application Information
Part
C5
C2
Value/Type
33pF NPO
1pF NPO
Size
0603
0603
VDD
IF AMP
+5V
L2
C9
C8
IF OUT
C3
C4,C9
C6
C7
C8
L1
L2
TRL1
TRL2
TRL3
0.5pF NPO
0.1uF X7R
1.8pF NPO
270 pF NPO
1000pF X7R
39 nH
0603
0603
0603
0603
0603
0805
1008
@2.5GHz
@2.5GHz
@2.5GHz
L1
1
14
13
12
11
10
9
LO IN
2
3
4
5
6
7
C7
C6
TRL2
RFIN
560 nH
C5
TRL3
8
TRL1
C3
q = 30°, Z0=110W
q = 23°, Z0=110W
q = 28°, Z0=110W
C2
VDD
+5V
C4
Matching/Diplexing Circuit for 2.5 to 2.68 GHz Operation.
Recommended LO IN Port Matching
The LO IN port of the C2304 can be matched into 50 ohms with a lossy network. At 3dBm drive, the
unmatched port is at Z = 5 –15j ohms at 2.278 GHz. Also of note is that this impedance varies somewhat with
the LO drive level. Therefore a narrow band high Q network is not recommended due to inherent
manufacturing variation in LO drive available. The simple network below matches this port over an ~ 10%
bandwidth.
TRL 1
Part
C1
R1
Value/Type
1.8pF NPO
4.3 W
Size
0603
0603
LO Source
50 ohm
LO IN
Pin 2
R1
C1
TRL1
q = 21°, Z0=110W
@2.5GHz
Test Board Layout
Biasing and Electrical Ground/
Thermal Considerations
LO IN
RF IN
Pins 3,4,5,10 and 12 should have ground vias straddling
both sides of the pin solder contact. This insures good
electrical and thermal grounding. If the IF AMP is run at
Idss (DC Grounded IF BIAS pin 14), this pin should be
grounded as described above. It is recommended that a
continuous ground plane be present under the package
to lower pin impedance and maintain similarity with the
matching environment used in the schematic in the
Application Information section. Bias for the IF amplifier
is supplied thru IF OUT pin 14. All ports are DC coupled
to the IC. Pins 2,6 and 13 should be kept at 0V DC to
maintain proper gate voltages. Pin 9 is internally biased
at 5V under normal operation and requires an external DC
block.
VDD
IF AMP
VDD
C 2 3 0 X
Material : GETEK
.028”
Sp
C2304Spec
Rev 6 12/30/99
IF OUT
Page 4
C2304
Package Specifications
Pin Number
Function
IF OUT
LO IN
GND
1
2
3
4
GND
5
GND
6
7
RF IN
VDD
8
GND
9
RFOUT
GND
IF/RF
GND
IF IN
IF BIAS
10
11
12
13
14
Advantages of GaAs MMIC
Notes:
·
Standard packaging is 14L SOIC tube. Tape and Reel available
upon request.
RF Integration ˘ Less Components/Board Space
Good Device Matching ˘ No Tweaks ˘ Less Tuning
Great power efficiency at low voltage
Better Linearity and Distortion Performance
Superb Radiation Immunity
·
All shipments F.O.B. Pacific Wireless Aptos, CA 95003
No Latent or Cummulative ESD effects
No Infant Mortality; No ˆWalking Wounded˜
No Burn−in Necessary
Part Numbers:
Part Number
Description
1800 to 4800 Downconverter – Tube
C2304
1800 to 4800 Downconverter – Tape and Reel
C2304TR
For further information contact:
Pacific Wireless
2844 Mar Vista Dr. Suite 101
Aptos, CA 95003
TEL (831) 684-2474
FAX (831) 684-2494
www.pacwireless.com
Specifications Subject to Change Without Notice
C2304Spec
Rev 6 12/30/99
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