C2304 [ETC]

MMDS / ISM / S-Band Downconverter; MMDS / ISM / S波段下变频器
C2304
型号: C2304
厂家: ETC    ETC
描述:

MMDS / ISM / S-Band Downconverter
MMDS / ISM / S波段下变频器

ISM频段
文件: 总4页 (文件大小:81K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Pacific Wireless  
2844 Mar Vista Dr. Suite 101  
Aptos, CA 95003  
TEL (831) 684-2474  
C2304..  
DATA SHEET  
FAX (831) 684-2494  
www.pacwireless.com  
MMDS / ISM / S-Band Downconverter  
1800 to 4800 MHz Operation  
RF IN  
VDD  
LO IN  
Features  
· 1800 to 4800 MHz RF  
· 10 to 900 MHz IF  
· 26 dB Gain, 4dB Noise Figure  
· Single 5V Supply  
IF OUT  
· 27 dBm Output IP3  
· Separate RF AMP, MIXER/LO AMP and IF AMP cells.  
· 75 ohm IF output impedance  
IF/RF  
IF IN  
IF BIAS  
RF OUT  
Applications  
· 2.4 GHz ISM Band Applications  
· MMDS Downconverters  
· Wireless Bridges  
· Wireless LANS and WANS  
· Point to Multipoint Receivers  
· 2.4GHz Consumer Applications  
· Bluetooth Applications  
· Upconverters  
· Wireless Local Loop Systems  
· S Band Receivers  
Description  
The C2304 is a flexible high intercept and high gain down conversion GaAs MMIC packaged in a compact 14  
pin SOIC package. Each sub-circuit is brought out on separate pins to allow for custom filtering on the IF/RF  
mixer interstage or custom matching for specific bands. Broadband parallel feedback networks are used on the  
gain and LO driver stages and the mixer is a singly balanced, two diode type mixer. The FET source of the IF  
amplifier stage (IF BIAS) is accessible for AC bypassing which allows for current reduction with DC source  
degeneration. The gain and DC current is broken up as follows: RF AMP gain = 14dB, current = 22 mA; LO  
AMP gain = 11dB, current = 28ma; IF AMP gain = 18dB, current = 60 mA, MIXER conversion loss = -6dB.  
Simple external matching circuits can be implemented for all ports to achieve VSWR’s <2:1 over moderate  
bandwidths of less than 400MHz.  
Electrical Characteristics  
Typical Specifications for VDD=5.0V TA=+25oC  
Minimum and Maximum specifications are guaranteed over RF range 2.5GHz – 2.68GHz  
Tested in 50W input / 75W output system, LO=2.278GHz at 5dBm, using matching circuit shown on page 3.  
Parameter  
Conversion Gain  
Symbol  
G
Conditions  
LO=5dBm  
Min  
24.7  
Typ  
26  
Max  
27.3  
Units  
dB  
Single Sideband Noise Figure  
Output IP3  
RF Input Return Loss  
IF Output Return Loss  
NF  
IP3  
S11  
S22  
LO=2.278GHz  
LO=5dBm  
50W input ref.  
75W output ref.  
4
27  
-12  
-11  
dB  
dBm  
dB  
dB  
Page 2  
LO Input Return Loss  
C2304  
S11  
P1dB  
IDD  
ISOr-i  
ISOl-i  
ISOl-r  
VSWR  
50W input ref.  
LO=5dBm  
-2  
17  
110  
32  
13  
24  
dBm  
dBm  
mA  
dB  
Output Power at 1dB Comp.  
Operating Drain Current  
RF OUT to IF/RF Isolation  
LO IN to IF OUT Isolation  
LO IN to RF IN Isolation  
Load VSWR for Input/Output  
Stability1  
LO=5dBm  
LO=5dBm  
LO=5dBm  
With network on page 3  
dB  
DB  
10:1  
Thermal Resistance  
qJC  
Junction to GND lead  
75  
°C/W  
1 As a separate circuit the IF AMP is conditionally stable for VSWR < 5:1 over 1.5-3.6GHz  
Typical Performance Characteristics  
(Obtained using external circuit shown on p. 3)  
Conversion Gain vs. Temperature  
LO = 2.278GHz @ 5dBm  
Conversion Gain and Output IP3 vs. LO Power  
F1=2.59 GHz and F2=2.596 GHz  
28  
26  
24  
30  
+25C  
+85C  
-40C  
29  
28  
27  
22  
20  
26  
25  
24  
IP3  
Conv. gain  
18  
16  
23  
22  
-6  
-4  
-2  
0
2
4
6
8
10  
2.45  
2.5  
2.55  
2.6  
2.65  
2.7  
LO Power (dBm)  
RF Freq (GHz)  
IF Output Return Loss in 75 ohms  
LO = 5dBm  
RF Input Return Loss and RFOUT to IF/RF Isolation  
0
-5  
0
-5  
-10  
-15  
-20  
-25  
-30  
-35  
RF Input Return loss  
RFout to RF/IF Isolation  
-10  
-15  
-20  
-25  
200  
220 240  
260 280  
300 320  
Freq (MHz)  
340 360  
380 400  
420  
2.5  
2.55  
2.6  
2.65  
2.7  
Freq (GHz)  
Absolute Maximum Ratings  
Characteristic  
Symbol  
Value  
+8  
Units  
V
Drain Voltage  
VDD1,2  
Bias Current  
RF Input Power  
IDS  
PIN  
PDISS  
VSWR  
TOP  
200  
+18  
1.0  
mA  
dBm  
W
Power Dissipation  
Load VSWR  
Operating Temperature  
Junction Temperature  
Storage Temperature Range  
10:1  
-40 to +85  
150  
-65 to +150  
°C  
°C  
°C  
TJ  
TSTG  
Caution: Operating beyond specified rating for any of these parameters may cause permanent damage to the device.  
Specifications Subject to Change Without Notice  
C2304Spec  
Rev 6 12/30/99  
Page 3  
C2304  
Application Information  
Part  
C5  
C2  
Value/Type  
33pF NPO  
1pF NPO  
Size  
0603  
0603  
VDD  
IF AMP  
+5V  
L2  
C9  
C8  
IF OUT  
C3  
C4,C9  
C6  
C7  
C8  
L1  
L2  
TRL1  
TRL2  
TRL3  
0.5pF NPO  
0.1uF X7R  
1.8pF NPO  
270 pF NPO  
1000pF X7R  
39 nH  
0603  
0603  
0603  
0603  
0603  
0805  
1008  
@2.5GHz  
@2.5GHz  
@2.5GHz  
L1  
1
14  
13  
12  
11  
10  
9
LO IN  
2
3
4
5
6
7
C7  
C6  
TRL2  
RFIN  
560 nH  
C5  
TRL3  
8
TRL1  
C3  
q = 30°, Z0=110W  
q = 23°, Z0=110W  
q = 28°, Z0=110W  
C2  
VDD  
+5V  
C4  
Matching/Diplexing Circuit for 2.5 to 2.68 GHz Operation.  
Recommended LO IN Port Matching  
The LO IN port of the C2304 can be matched into 50 ohms with a lossy network. At 3dBm drive, the  
unmatched port is at Z = 5 –15j ohms at 2.278 GHz. Also of note is that this impedance varies somewhat with  
the LO drive level. Therefore a narrow band high Q network is not recommended due to inherent  
manufacturing variation in LO drive available. The simple network below matches this port over an ~ 10%  
bandwidth.  
TRL 1  
Part  
C1  
R1  
Value/Type  
1.8pF NPO  
4.3 W  
Size  
0603  
0603  
LO Source  
50 ohm  
LO IN  
Pin 2  
R1  
C1  
TRL1  
q = 21°, Z0=110W  
@2.5GHz  
Test Board Layout  
Biasing and Electrical Ground/  
Thermal Considerations  
LO IN  
RF IN  
Pins 3,4,5,10 and 12 should have ground vias straddling  
both sides of the pin solder contact. This insures good  
electrical and thermal grounding. If the IF AMP is run at  
Idss (DC Grounded IF BIAS pin 14), this pin should be  
grounded as described above. It is recommended that a  
continuous ground plane be present under the package  
to lower pin impedance and maintain similarity with the  
matching environment used in the schematic in the  
Application Information section. Bias for the IF amplifier  
is supplied thru IF OUT pin 14. All ports are DC coupled  
to the IC. Pins 2,6 and 13 should be kept at 0V DC to  
maintain proper gate voltages. Pin 9 is internally biased  
at 5V under normal operation and requires an external DC  
block.  
VDD  
IF AMP  
VDD  
C 2 3 0 X  
Material : GETEK  
.028”  
Sp
C2304Spec  
Rev 6 12/30/99  
IF OUT  
Page 4  
C2304  
Package Specifications  
Pin Number  
Function  
IF OUT  
LO IN  
GND  
1
2
3
4
GND  
5
GND  
6
7
RF IN  
VDD  
8
GND  
9
RFOUT  
GND  
IF/RF  
GND  
IF IN  
IF BIAS  
10  
11  
12  
13  
14  
Advantages of GaAs MMIC  
Notes:  
·
Standard packaging is 14L SOIC tube. Tape and Reel available  
upon request.  
RF Integration ˘ Less Components/Board Space  
Good Device Matching ˘ No Tweaks ˘ Less Tuning  
Great power efficiency at low voltage  
Better Linearity and Distortion Performance  
Superb Radiation Immunity  
·
All shipments F.O.B. Pacific Wireless Aptos, CA 95003  
No Latent or Cummulative ESD effects  
No Infant Mortality; No ˆWalking Wounded˜  
No Burn−in Necessary  
Part Numbers:  
Part Number  
Description  
1800 to 4800 Downconverter – Tube  
C2304  
1800 to 4800 Downconverter – Tape and Reel  
C2304TR  
For further information contact:  
Pacific Wireless  
2844 Mar Vista Dr. Suite 101  
Aptos, CA 95003  
TEL (831) 684-2474  
FAX (831) 684-2494  
www.pacwireless.com  
Specifications Subject to Change Without Notice  
C2304Spec  
Rev 6 12/30/99  

相关型号:

C2304TR

MMDS / ISM / S-Band Downconverter
ETC

C2306

MMDS / ISM / S-Band Mixer
ETC

C2306TR

MMDS / ISM / S-Band Mixer
ETC

C2307

RESISTOR, TRIMMER, METAL GLAZE, 1 TURN(S), 0.15W, 100ohm - 2200000ohm, LEAD/ROHS COMPLIANT
KOA

C230A

Silicon Controlled Rectifier, 25000mA I(T), 100V V(DRM)
MOTOROLA

C230A

Silicon Controlled Rectifier, 25000mA I(T), 100V V(DRM)
POWEREX

C230A3

Silicon Controlled Rectifier, 25000mA I(T), 100V V(DRM)
MOTOROLA

C230B

Silicon Controlled Rectifier, 25000mA I(T), 200V V(DRM)
POWEREX

C230B3

Silicon Controlled Rectifier, 25000mA I(T), 200V V(DRM)
MOTOROLA

C230C

Silicon Controlled Rectifier, 25000mA I(T), 300V V(DRM)
POWEREX

C230C3HR

Silicon Controlled Rectifier
DIGITRON

C230D

Silicon Controlled Rectifier, 25000mA I(T), 400V V(DRM)
MOTOROLA