BZW04-5V8/376 [ETC]
TRANSIL ; TRANSIL\n型号: | BZW04-5V8/376 |
厂家: | ETC |
描述: | TRANSIL
|
文件: | 总6页 (文件大小:84K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BZW04-5V8/376
BZW04-5V8B/376B
TRANSILTM
FEATURES
PEAK PULSE POWER : 400 W (10/1000µs)
STAND-OFF VOLTAGERANGE :
From 5.8V to 376 V
UNI AND BIDIRECTIONAL TYPES
LOW CLAMPING FACTOR
FAST RESPONSE TIME
UL RECOGNIZED
DESCRIPTION
Transil diodes provide high overvoltage protection
by clamping action. Their instantaneous response
to transient overvoltages makes them particularly
suited to protect voltage sensitive devices such
as MOS Technology and low voltage supplied
IC’s.
F126
ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C)
Symbol
PPP
Parameter
Peak pulse power dissipation (see note 1)
Power dissipationon infinite heatsink
Value
400
1.7
Unit
W
Tj initial = Tamb
amb = 75°C
P
T
W
IFSM
Non repetitivesurge peak forward current
for unidirectional types
tp = 10ms
Tj initial = Tamb
30
A
Tstg
Tj
Storage temperaturerange
Maximum junction temperature
- 65 to + 175
175
°C
°C
Maximum lead temperaturefor soldering during 10s a 5mm
from case.
TL
230
°C
Note 1 : For a surge greater than the maximum values, the diode will fail in short-circuit.
THERMAL RESISTANCES
Symbol
Rth (j-l)
Parameter
Value
60
Unit
°C/W
°C/W
Junction to leads
Junction to ambient on printed circuit. Llead = 10 mm
Rth (j-a)
100
January 1998 Ed : 2
1/6
BZW04-xx
ELECTRICALCHARACTERISTICS (Tamb = 25°C)
I
I
F
Symbol
VRM
VBR
Parameter
Stand-off voltage
V
V
BR
Breakdown voltage
Clamping voltage
Leakage current @ V
Peak pulse current
CL
V
V
F
VCL
RM
V
I
I
RM
IRM
RM
IPP
α
Voltage temperaturecoefficient
Forward voltage drop
T
VF
PP
Types
IRM @ VRM
max
VBR
@
IR
VCL @ IPP
max
10/1000µs
VCL @ IPP
max
8/20µs
T
C
α
min
max
typ
note2
mA
note3 note4
Unidirectional
BZW04-5V8
BZW04-6V4
BZW04-8V5
BZW04-10
BZW04-13
BZW04-15
BZW04-19
BZW04-20
BZW04-23
BZW04-26
BZW04-28
BZW04-31
BZW04-33
BZW04-40
BZW04-48
BZW04-58
BZW04-70
BZW04-85
BZW04-102
BZW04-128
BZW04-154
BZW04-171
BZW04-188
BZW04-213
BZW04-256
Bidirectional
BZW04-5V8B
BZW04-6V4B
BZW04-8V5B
BZW04-10B
BZW04-13B
BZW04-15B
BZW04-19B
BZW04-20B
BZW04-23B
BZW04-26B
BZW04-28B
BZW04-31B
BZW04-33B
BZW04-40B
BZW04-48B
BZW04-58B
BZW04-70B
BZW04-85B
BZW04-102B
BZW04-128B
BZW04-154B
BZW04-171B
BZW04-188B
BZW04-213B
BZW04-256B
µA
V
V
V
A
V
A
174
160
124
106
85
10-4/°C
5.7
pF
3500
3100
2000
1550
1200
975
800
725
625
575
510
480
450
370
320
270
230
200
170
145
125
120
110
100
90
1000 5.8
500 6.4
10 8.5
6.45
7.13
9.5
10
10
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
10.5
11.3
14.5
16.7
21.2
25.2
30.6
33.2
37.5
41.5
45.7
49.9
53.9
64.8
77.0
92.0
113
137
165
207
246
274
328
344
414
38.0
35.4
27.6
24.0
19.0
16.0
13.0
12.0
10.7
9.6
13.4
14.5
18.6
21.7
27.2
32.5
39.3
42.8
48.3
53.5
59.0
64.3
69.7
84
6.1
7.3
5
5
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
10.2
12.8
15.3
18.8
20.5
23.1
25.6
28.2
30.8
33.3
40.2
47.8
58.1
70.1
85.5
102
11.4
14.3
17.1
20.9
22.8
25.7
28.5
31.4
34.2
37.1
44.7
53.2
64.6
77.9
95.0
114
7.8
8.4
71
8.8
59
9.2
54
9.4
48
9.6
43
9.7
8.8
39
9.8
8.0
36
9.6
7.4
33
10.0
10.1
10.3
10.4
10.5
10.6
10.7
10.8
10.8
10.8
10.8
11.0
11.0
6.2
27
5.2
100
121
146
178
212
265
317
353
388
442
529
23
4.3
19
3.5
16.0
13.0
11.0
9.0
7.0
6.5
6.0
5.2
4.3
2.9
2.4
128
143
2.0
154
171
1.6
171
190
1.5
188
209
1.4
231
237
1.5
256
285
1.2
2/6
BZW04-xx
Types
IRM @ VRM VBR
@
IR
VCL @ IPP
max
10/1000µs
VCL @ IPP
max
8/20µs
αT
C
min
max
typ
note2
mA
note3 note4
10-4/°C pF
Unidirectional
Bidirectional
BZW04-273B
BZW04-299B
BZW04-342B
BZW04-376B
µA
V
V
V
A
V
A
1
1
1
1
273
299
342
376
304
332
380
418
1
1
1
1
438
482
548
603
1.2
0.9
0.9
0.8
564
618
706
776
4.0
3.7
3.2
3.0
11.0
11.0
11.0
11.0
85
80
75
70
BZW04-273
BZW04-299
BZW04-342
BZW04-376
Fig. 1:
Peak pulse power dissipation versus initial
junction temperature(printed circuit board).
% I
PP
10
s
100
50
0
PULSE WAVEFORM 10/1000
s
t
1000
s
Note 2 : Pulse test: t < 50 ms.
p
Note 3 : ∆V
BR
Note 4 :
= αT (T
amb
- 25)
V
(25°C)
*
*
BR
V = 0 V, F = 1 MHz. For bidirectional types,
R
capacitance value is divided by 2
3/6
BZW04-xx
Fig. 2 : Peakpulse power versus exponentialpulse duration.
PPP (W)
1E5
Tj initial = 25°C
1E4
1E3
1E2
1E1
tp (ms ) EXPO.
10
0.001
0.01
0.1
1
100
Fig. 3 :
Clamping voltage versus peak pulse current.
Exponentialwaveform tp = 20 µs________
tp = 1 ms-------------
tp = 10 ms...............
V
(V)
CL
1000
100
10
% Ipp
100
-
BWZ04 376
Tj initial = 25°C
BWZ04 213
-
50
0
t
t
t
r
t
< 10
s
r
BWZ04 33
-
BWZ04 8V5
-
BWZ04 5V8
-
Ipp (A)
1
0.1
1
10
100
1000
Note : The curves of the figure 3 are specified for a junction temperatureof 25 °C before surge.
The given results may be extrapolatedfor other junction temperaturesby usingthe following formula :
∆VBR = αT * (Tamb -25) * VBR (25°C).
For intermediatevoltages, extrapolate the givenresults.
4/6
BZW04-xx
Fig. 4a :
Fig. 4b :
Capacitance versus reverse applied
voltage for bidirectional types (typical values).
Capacitance versus reverse applied
voltage for unidirectional types (typical values).
C (pF)
10000
C (pF)
10000
Tj = 25øC
f = 1 MHz
Tj = 25øC
f = 1 MHz
°
-
1000
100
10
-
-
1000
100
10
-
-
-
V
(V)
R
V
(V)
R
1
1
10
100
1
10
100
Fig.6 :
Transientthermalimpedancejunctionambi-
Fig.5 : Peakforwardvoltagedropversuspeakforward
entversus pulse duration (For FR4 PC Board
with L lead = 10mm).
current (typical values for unidirectional types).
Note : Multiply by 2 for units with V
> 220V.
BR
Zth (j-a) (°C/W)
100
10
tp(s)
1
0.01
0.1
1
10
100
1000
Fig. 7 : Relative variation of leakage current
versus junction temperature.
5/6
BZW04-xx
ORDER CODE
BZW 04 - 10
B RL
PACKAGING :
400 W
’
’ = Ammopacktape
’RL’ = Tape and reel
BIDIRECTIONAL
No suffix : Unidirectional
STAND-OFF VOLTAGE
MARKING : Logo, Date Code, Type Code, Cathode Band(for unidirectionaltypes only).
PACKAGE MECHANICAL DATA
F126 (Plastic)
DIMENSIONS
Millimeters Inches
REF.
Min. Typ. Max. Min. Typ. Max.
A
B
6.05 6.20 6.35 0.238 0.244 0.250
26
31 1.024
1.220
C
2.95 3.00 3.05 0.116 0.118 0.120
0.76 0.81 0.86 0.030 0.032 0.034
D
L1
1.27
0.050
Note 1 : The lead is not controlled within zone L1
Packaging
: standardpackagingisintapeand reel.
Weight = 0.40 g.
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is grantedby implication or otherwise under any patentor patentrights of SGS-THOMSON Microelectronics.Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSONMicroelectronics products are not authorized for use as criticalcomponents in life support devices or systems withoutexpress
written approval of SGS-THOMSON Microelectronics.
1998 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco
The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
6/6
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