BZV55-C10/T1 [ETC]
DIODE ZENER 10V ; 齐纳二极管10V\n
| 型号： | BZV55-C10/T1 |
| 厂家： | 
ETC |
| 描述： | DIODE ZENER 10V
|
| 文件： | 总12页 (文件大小：60K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BZV55 series
Voltage regulator diodes
1999 May 21
Product specification
Supersedes data of 1996 Apr 26
Philips Semiconductors
Product specification
Voltage regulator diodes
BZV55 series
FEATURES
DESCRIPTION
Low-power voltage regulator diodes in small hermetically sealed glass
• Total power dissipation:
max. 500 mW
SOD80C SMD packages. The diodes are available in the normalized E24 ±2%
(BZV55-B) and approx. ±5% (BZV55-C) tolerance range. The series consists of
37 types with nominal working voltages from 2.4 to 75 V.
• Two tolerance series: ±2% and
approx. ±5%
• Working voltage range:
nom. 2.4 to 75 V (E24 range)
k
a
handbook, 4 columns
• Non-repetitive peak reverse power
dissipation: max. 40 W.
MAM215
APPLICATIONS
• Low-power voltage stabilizers or
The cathode is indicated by a yellow band.
voltage references.
Fig.1 Simplified outline (SOD80C) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
mA
IF
continuous forward current
−
250
IZSM
non-repetitive peak reverse current
tp = 100 µs; square wave;
Tj = 25 °C prior to surge
see Tables
1 and 2
400
Ptot
total power dissipation
Tamb ≤50 °C; note 1
−
−
−
mW
mW
W
tie-point ≤50 °C; note 1
500
40
PZSM
non-repetitive peak reverse power
dissipation
tp = 100 µs; square wave;
Tj = 25 °C prior to surge; see Fig.3
Tstg
Tj
storage temperature
junction temperature
−65
−65
+200
+200
°C
°C
Note
1. Device mounted on a ceramic substrate of 10 × 10 × 0.6 mm.
1999 May 21
2
Philips Semiconductors
Product specification
Voltage regulator diodes
BZV55 series
ELECTRICAL CHARACTERISTICS
Total BZV55-B and C series
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
forward voltage
CONDITIONS
MAX.
UNIT
VF
IR
IF = 10 mA; see Fig.4
0.9
V
reverse current
BZV55-B/C2V4
BZV55-B/C2V7
BZV55-B/C3V0
BZV55-B/C3V3
BZV55-B/C3V6
BZV55-B/C3V9
BZV55-B/C4V3
BZV55-B/C4V7
BZV55-B/C5V1
BZV55-B/C5V6
BZV55-B/C6V2
BZV55-B/C6V8
BZV55-B/C7V5
BZV55-B/C8V2
BZV55-B/C9V1
BZV55-B/C10
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 1 V
VR = 2 V
VR = 2 V
VR = 2 V
VR = 4 V
VR = 4 V
VR = 5 V
VR = 5 V
VR = 6 V
VR = 7 V
VR = 8 V
VR = 8 V
VR = 8 V
VR = 0.7VZnom
50
20
10
5
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
nA
nA
nA
nA
nA
nA
nA
5
3
3
3
2
1
3
2
1
700
500
200
100
100
100
50
BZV55-B/C11
BZV55-B/C12
BZV55-B/C13
BZV55-B/C15 to 75
1999 May 21
3
Table 1 Per type BZV55-B/C2V4 to B/C24
Tj = 25 °C unless otherwise specified.
WORKING VOLTAGE
VZ (V)
DIFFERENTIAL RESISTANCE
TEMP. COEFF.
SZ (mV/K)
at IZtest = 5 mA
(see Figs 5 and 6)
DIODE CAP.
Cd (pF)
at f = 1 MHz;
VR = 0 V
NON-REPETITIVE
PEAK REVERSE
CURRENT
IZSM (A)
at tp = 100 µs;
Tamb = 25 °C
rdif (Ω)
at IZtest = 5 mA
BZV55-B
or C
XXX
Tol. approx.
±5% (C)
at
at
Tol. ±2% (B)
IZtest = 1 mA
IZtest = 5 mA
MIN.
MAX.
MIN.
MAX.
TYP. MAX. TYP. MAX. MIN.
TYP. MAX.
MAX.
MAX.
2V4
2.35
2.65
2.45
2.75
2.2
2.5
2.6
2.9
275
300
325
350
375
400
410
425
400
80
600
600
600
600
600
600
600
500
480
400
150
80
70
75
80
85
85
85
80
50
40
15
6
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−2.7
−2.0
0.4
−1.6
−2.0
−2.1
−2.4
−2.4
−2.5
−2.5
−1.4
−0.8
1.2
0
450
450
450
450
450
450
450
300
300
300
200
200
150
150
150
90
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
4.0
4.0
3.0
3.0
2.5
2.5
2.5
2.0
1.5
1.5
1.5
1.25
1.25
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
0
2.94
3.06
2.8
3.2
0
3.23
3.37
3.1
3.5
0
3.53
3.67
3.4
3.8
0
3.82
3.98
3.7
4.1
0
4.21
4.39
4.0
4.6
0
4.61
4.79
4.4
5.0
0.2
1.2
2.5
3.7
4.5
5.3
6.2
7.0
8.0
9.0
10.0
11.0
13.0
14.0
16.0
18.0
20.0
22.0
5.00
5.20
4.8
5.4
5.49
5.71
5.2
6.0
6.08
6.32
5.8
6.6
40
2.3
6.66
6.94
6.4
7.2
30
6
1.2
3.0
7.35
7.65
7.0
7.9
30
80
6
2.5
4.0
8.04
8.36
7.7
8.7
40
80
6
3.2
4.6
8.92
9.28
8.5
9.6
40
100
150
150
150
170
200
200
225
225
250
250
6
3.8
5.5
9.80
10.20
11.20
12.20
13.30
15.30
16.30
18.40
20.40
22.40
24.50
9.4
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
50
8
4.5
6.4
11
10.80
11.80
12.70
14.70
15.70
17.60
19.60
21.60
23.50
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
50
10
10
10
10
10
10
15
20
25
5.4
7.4
85
12
50
6.0
8.4
85
13
50
7.0
9.4
80
15
50
9.2
11.4
12.4
14.4
16.4
18.4
20.4
75
16
50
10.4
12.4
14.4
16.4
18.4
75
18
50
70
20
60
60
22
60
60
24
60
55
Table 2 Per type BZV55-B/C27 to B/C75
Tj = 25 °C unless otherwise specified.
WORKING VOLTAGE
VZ (V)
DIFFERENTIAL RESISTANCE
TEMP. COEFF.
SZ (mV/K)
at IZtest = 2 mA
(see Figs 5 and 6)
DIODE CAP.
Cd (pF)
at f = 1 MHz;
VR = 0 V
NON-REPETITIVE
PEAK REVERSE
CURRENT
IZSM (A)
at tp = 100 µs;
Tamb = 25 °C
rdif (Ω)
at IZtest = 2 mA
BZV55-B
or C
XXX
Tol. approx.
±5% (C)
at
at
Tol. ±2% (B)
IZtest = 0.5 mA
IZtest = 2 mA
MIN.
MAX.
MIN.
MAX.
TYP.
MAX.
TYP. MAX. MIN. TYP. MAX.
MAX.
MAX.
27
30
33
36
39
43
47
51
56
62
68
75
26.50
29.40
32.30
35.30
38.20
42.10
46.10
50.00
54.90
60.80
66.60
73.50
27.50
30.60
33.70
36.70
39.80
43.90
47.90
52.00
57.10
63.20
69.40
76.50
25.1
28.0
31.0
34.0
37.0
40.0
44.0
48.0
52.0
58.0
64.0
70.0
28.9
32.0
35.0
38.0
41.0
46.0
50.0
54.0
60.0
66.0
72.0
79.0
65
70
300
300
325
350
350
375
375
400
425
450
475
500
25
30
35
35
40
45
50
60
70
80
90
95
80
80
21.4 23.4
24.4 26.6
27.4 29.7
30.4 33.0
33.4 36.4
37.6 41.2
42.0 46.1
46.6 51.0
52.2 57.0
58.8 64.4
65.6 71.7
73.4 80.2
25.3
29.4
33.4
37.4
41.2
46.6
51.8
57.2
63.8
71.6
79.8
88.6
50
50
45
45
45
40
40
40
40
35
35
35
1.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.3
0.25
0.2
75
80
80
90
80
130
150
170
180
200
215
240
255
85
85
90
100
120
150
170
Philips Semiconductors
Product specification
Voltage regulator diodes
BZV55 series
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
300
UNIT
K/W
K/W
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient see Fig.2 and note 1
380
Note
1. Device mounted on a ceramic substrate of 10 × 10 × 0.6 mm.
GRAPHICAL DATA
MBG930
3
10
δ = 1
R
th j-a
0.75
0.50
0.33
(K/W)
2
0.20
10
0.10
0.05
0.02
0.01
≤0.001
10
t
t
p
p
δ =
T
T
1
10
−1
2
3
4
5
1
10
10
10
10
10
t
(ms)
p
Fig.2 Thermal resistance from junction to ambient as a function of pulse duration.
1999 May 21
6
Philips Semiconductors
Product specification
Voltage regulator diodes
BZV55 series
MBG801
MBG781
3
10
300
handbook, halfpage
handbook, halfpage
I
P
F
ZSM
(mA)
(W)
2
10
200
(1)
10
100
(2)
1
10
0
0.6
−1
0.8
1.0
1
duration (ms)
10
V
(V)
F
(1) Tj = 25 °C (prior to surge).
(2) Tj = 150 °C (prior to surge).
Tj = 25 °C.
Fig.3 Maximum permissible non-repetitive
peak reverse power dissipation
versus duration.
Fig.4 Forward current as a function of forward
voltage; typical values.
MBG783
MBG782
0
10
handbook, halfpage
handbook, halfpage
12
S
S
Z
Z
11
4V3
(mV/K)
(mV/K)
10
9V1
−1
5
3V9
3V6
8V2
7V5
6V8
6V2
5V6
5V1
−2
−3
0
3V3
4V7
3V0
2V4
2V7
−5
0
20
40
60
0
4
8
12
16
20
I
(mA)
Z
I
(mA)
Z
BZV55-B/C2V4 to B/C4V3.
BZV55-B/C4V7 to B/C12.
Tj = 25 to 150 °C.
Tj = 25 to 150 °C.
Fig.5 Temperature coefficient as a function of
working current; typical values.
Fig.6 Temperature coefficient as a function of
working current; typical values.
1999 May 21
7
Philips Semiconductors
Product specification
Voltage regulator diodes
BZV55 series
PACKAGE OUTLINE
Hermetically sealed glass surface mounted package; 2 connectors
SOD80C
k
a
(1)
D
L
L
H
DIMENSIONS (mm are the original dimensions)
0
1
2 mm
L
D
H
UNIT
scale
1.60
1.45
3.7
3.3
mm
0.3
Note
1. The marking band indicates the cathode.
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-06-20
SOD80C
100H01
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Preliminary specification
Product specification
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 May 21
8
Philips Semiconductors
Product specification
Voltage regulator diodes
BZV55 series
NOTES
1999 May 21
9
Philips Semiconductors
Product specification
Voltage regulator diodes
BZV55 series
NOTES
1999 May 21
10
Philips Semiconductors
Product specification
Voltage regulator diodes
BZV55 series
NOTES
1999 May 21
11
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© Philips Electronics N.V. 1999
SCA64
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Printed in The Netherlands
115002/00/02/pp12
Date of release: 1999 May 21
Document order number: 9397 750 05884
相关型号：
BZV55-C10/T3
DIODE 10 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Voltage Regulator Diode
NXP
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