BUZ906X4S [ETC]
NEW PRODUCT UNDER DEVELOPMENT; 正在开发的新产品
| 型号： | BUZ906X4S |
| 厂家： | 
ETC |
| 描述： | NEW PRODUCT UNDER DEVELOPMENT |
| 文件： | 总2页 (文件大小：37K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BUZ905X4S
BUZ906X4S
MAGNA
TEC
NEW PRODUCT UNDER DEVELOPMENT
MECHANICAL DATA
Dimensions in mm (inches)
P–CHANNEL
POWER MOSFET
1 1.8 (0 .4 6 3 )
1 2.2 (0 .4 8 0 )
31 .5 (1 .2 4 0)
31 .7 (1 .2 4 8)
POWER MOSFETS FOR
AUDIO APPLICATIONS
8 .9 (0 .35 0 )
9 .6 (0 .37 8 )
7 .8 (0 .3 07 )
8 .2 (0 .3 22 )
4 .1 (0 .16 1)
4 .3 (0 .16 9)
W
=
Hex Nut M 4
(4 places)
4 .8 (0 .18 7)
4 .9 (0 .19 3)
(4 places)
H =
1
2
3
R
4.0 (0 .1 57 )
4.2 (0 .1 65 )
0 .7 5 (0.03 0)
0 .8 5 (0.03 3)
FEATURES
4
• HIGH SPEED SWITCHING
3.3 (0.129)
3.6 (0.143)
5.1 (0.2 01 )
5.9 (0.2 32 )
4.0 (0.157)
=
(2 Places)
R
• P–CHANNEL POWER MOSFET
• SEMEFAB DESIGNED AND DIFFUSED
• HIGH VOLTAGE (160V & 200V)
• HIGH ENERGY RATING
14.9 (0.587)
15.1 (0.594)
1 .9 5 (0 .07 7 )
2.1 4 (0 .0 84 )
3 0 .1 (1 .1 8 5 )
3 0 .3 (1 .1 9 3 )
38.0 (1.496)
38.2 (1.504)
• ENHANCEMENT MODE
SOT227
• INTEGRAL PROTECTION DIODE
• N–CHANNEL ALSO AVAILABLE
Pin 1 – Drain
Pin 2 – Source
Pin 3 – Gate
Pin 4 – Drain
ABSOLUTE MAXIMUM RATINGS
(T
= 25°C unless otherwise stated)
BUZ905X4S BUZ906X4S
case
V
V
Drain – Source Voltage
–160V
–200V
DSX
Gate – Source Voltage
Continuous Drain Current
Body Drain Diode
±14V
–32A
–32A
500W
GS
I
I
D
D(PK)
P
Total Power Dissipation
@ T
= 25°C
D
stg
j
case
T
T
Storage Temperature Range
–55 to 150°C
150°C
Maximum Operating Junction Temperature
Thermal Resistance Junction – Case
R
0.3°C/W
θJC
Prelim. 4/94
Magnatec. Telephone (0455) 554711. Telex: 341927. Fax (0455) 552612.
BUZ905X4S
BUZ906X4S
MAGNA
TEC
NEW PRODUCT UNDER DEVELOPMENT
ELECTRICAL RATINGS (Tcase = 25°C unless otherwise stated)
Characteristic
Test Conditions
= 10V
Min. Typ. Max. Unit
V
–160
GS
BV
Drain – Source Breakdown Voltage
V
DSX
I = –10mA
–200
D
BV
Gate – Source Breakdown Voltage
Gate – Source Cut–Off Voltage
V
V
V
V
V
V
V
= 0
I = ±100µA
±14
V
V
V
GSS
DS
DS
GD
GS
DS
DS
DS
G
V
V
= –10V
= 0
I = –100mA –0.1
–1.5
–12
GS(OFF)
DS(SAT)
D
* Drain – Source Saturation Voltage
I = –32A
D
= 10V
= –160V
= –200V
= –10V
I
Drain – Source Cut–Off Current
–10 mA
–10 mA
DSX
yfs*
Forward Transfer Admittance
Input Capacitance
I = –5A
2
6
S
D
C
C
C
TBE
TBE
TBE
TBE
TBE
iss
Output Capacitance
Reverse Transfer Capacitance
Turn–on Time
V
V
= –10V
= –20V
f = 1MHz
pF
oss
rss
DS
DS
t
t
on
off
I = –7A
nS
D
Turn-off Time
* Pulse Test: Pulse Width = 300µS , Duty Cycle ≤ 2%
D
S
G
Prelim. 4/94
Magnatec. Telephone (0455) 554711. Telex: 341927. Fax (0455) 552612.
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