BUH100/D [ETC]

SWITCHMODE? NPN Silicon Planar Power Transistor ; 开关模式？ NPN硅平面功率晶体管\n


型号：	BUH100/D
厂家：	ETC
描述：	SWITCHMODE? NPN Silicon Planar Power Transistor 开关模式？ NPN硅平面功率晶体管\n 晶体开关晶体管
文件：	总12页 (文件大小：228K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

ON Semiconductort

BUH100

SWITCHMODEt NPN Silicon

Planar Power Transistor

POWER TRANSISTOR

10 AMPERES

700 VOLTS

The BUH100 has an application specific state–of–art die designed

for use in 100 Watts Halogen electronic transformers.

This power transistor is specifically designed to sustain the large

inrush current during either the start–up conditions or under a short

circuit across the load.

100 WATTS

This High voltage/High speed product exhibits the following main

features:

• Improved Efficiency Due to the Low Base Drive Requirements:

High and Flat DC Current Gain h

Fast Switching

• Robustness Thanks to the Technology Developed to Manufacture

this Device

• ON Semiconductor Six Sigma Philosophy Provides Tight and

Reproducible Parametric Distributions

CASE 221A–09

TO–220AB

MAXIMUM RATINGS

Rating

Symbol

Value

400

700

Unit

Vdc

Adc

Collector–Emitter Sustaining Voltage

Collector–Base Breakdown Voltage

Collector–Emitter Breakdown Voltage

Emitter–Base Voltage

CEO

CBO

CES

EBO

Collector Current — Continuous

— Peak (1)

Base Current — Continuous

Base Current — Peak (1)

Adc

*Total Device Dissipation @ T = 25_C

100

0.8

Watt

W/_C

*Derate above 25°C

Operating and Storage Temperature

T , T

–65 to 150

stg

THERMAL CHARACTERISTICS

Thermal Resistance

— Junction to Case

— Junction to Ambient

_C/W

1.25

62.5

Maximum Lead Temperature for Soldering Purposes:

1/8″ from case for 5 seconds

260

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.

Semiconductor Components Industries, LLC, 2001

Publication Order Number:

March, 2001 – Rev. 2

BUH100/D

BUH100

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage

(I = 100 mA, L = 25 mH)

400

700

460

860

12.5

Vdc

CEO(sus)

Collector–Base Breakdown Voltage

CBO

EBO

CEO

CBO

= 1 mA)

Emitter–Base Breakdown Voltage

(I = 1 mA)

Vdc

EBO

Collector Cutoff Current

(V = Rated V , I = 0)

100

µAdc

CEO

Collector Cutoff Current

(V = Rated V , V = 0)

@ T = 25°C

100

1000

CES

CBO

@ T = 125°C

CES

Collector Base Current

(V = Rated V , V = 0)

@ T = 25°C

100

1000

@ T = 125°C

CBO EB

Emitter–Cutoff Current

(V = 9 Vdc, I = 0)

100

EBO

ON CHARACTERISTICS

Base–Emitter Saturation Voltage

@ T = 25°C

1.1

Vdc

BE(sat)

(I = 5 Adc, I = 1 Adc)

Collector–Emitter Saturation Voltage

(I = 5 Adc, I = 1 Adc)

@ T = 25°C

0.37

0.6

Vdc

CE(sat)

@ T = 125°C

(I = 7 Adc, I = 1.5 Adc)

@ T = 25°C

0.5

0.6

0.75

1.5

@ T = 125°C

DC Current Gain (I = 1 Adc, V = 5 Vdc)

@ T = 25°C

—

@ T = 125°C

DC Current Gain (I = 5 Adc, V = 5 Vdc)

@ T = 25°C

14.5

@ T = 125°C

DC Current Gain (I = 7 Adc, V = 5 Vdc)

@ T = 25°C

10.5

—

@ T = 125°C

DC Current Gain (I = 10 Adc, V = 5 Vdc)

@ T = 25°C

9.5

@ T = 125°C

DYNAMIC SATURATION VOLTAGE

@ T = 25°C

1.1

2.1

1.7

Dynamic Saturation

CE(dsat)

= 5 Adc, I = 1 Adc

Voltage:

Determined 3 µs after

rising I reaches

= 300 V

@ T = 125°C

@ T = 25°C

= 7.5 Adc, I = 1.5 Adc

90% of final I

= 300 V

@ T = 125°C

(See Figure 19)

DYNAMIC CHARACTERISTICS

Current Gain Bandwidth

MHz

(I = 1 Adc, V = 10 Vdc, f = 1 MHz)

Output Capacitance

100

150

(V = 10 Vdc, I = 0, f = 1 MHz)

Input Capacitance

1300

1750

(V = 8 Vdc, f = 1 MHz)

http://onsemi.com

BUH100

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 40 µs)

Turn–on Time

Turn–off Time

Turn–on Time

Turn–off Time

Turn–on Time

Turn–off Time

Turn–on Time

Turn–off Time

@ T = 25°C

off

130

140

200

µs

= 1 Adc, I = 0.2 Adc

@ T = 125°C

= 0.2 Adc

= 300 Vdc

@ T = 25°C

6.8

8.5

@ T = 125°C

@ T = 25°C

140

150

200

= 1 Adc, I = 0.2 Adc

@ T = 125°C

= 0.4 Adc

= 300 Vdc

@ T = 25°C

3.4

4.3

@ T = 125°C

@ T = 25°C

250

800

500

3.5

700

2.5

= 5 Adc, I = 1 Adc

@ T = 125°C

= 1 Adc

@ T = 25°C

2.9

3.6

= 300 Vdc

@ T = 125°C

@ T = 25°C

500

900

= 7.5 Adc, I = 1.5 Adc

@ T = 125°C

= 1.5 Adc

= 300 Vdc

@ T = 25°C

2.1

2.5

@ T = 125°C

SWITCHING CHARACTERISTICS: Inductive Load (V

= 300 V, V = 15 V, L = 200 µH)

clamp

Fall Time

@ T = 25°C

150

180

250

µs

@ T = 125°C

= 1 Adc

= 0.2 Adc

Storage Time

Crossover Time

Fall Time

@ T = 25°C

5.1

5.8

@ T = 125°C

@ T = 25°C

230

300

325

250

@ T = 125°C

@ T = 25°C

150

170

@ T = 125°C

= 1 Adc

= 0.2 Adc

= 0.5 Adc

Storage Time

Crossover Time

Fall Time

@ T = 25°C

2.5

2.8

@ T = 125°C

@ T = 25°C

260

300

350

150

3.5

300

150

2.5

350

@ T = 125°C

@ T = 25°C

100

140

@ T = 125°C

= 5 Adc

= 1 Adc

Storage Time

Crossover Time

Fall Time

@ T = 25°C

2.9

4.6

@ T = 125°C

@ T = 25°C

220

450

@ T = 125°C

@ T = 25°C

100

150

@ T = 125°C

= 7.5 Adc

= 1.5 Adc

Storage Time

Crossover Time

@ T = 25°C

2.5

@ T = 125°C

@ T = 25°C

250

475

@ T = 125°C

http://onsemi.com

BUH100

TYPICAL STATIC CHARACTERISTICS

100

= 1 V

= 3 V

T = 125°C

T = -ā20°C

T = 25°C

0.001

0.01

0.1

0.01

0.1

I , COLLECTOR CURRENT (AMPS)

Figure 1. DC Current Gain @ 1 Volt

Figure 2. DC Current Gain @ 3 Volt

100

= 5 V

I /I = 5

C B

T = 125°C

T = -ā20°C

T = 25°C

T = -ā20°C

T = 25°C

0.1

T = 125°C

0.01

0.1

100

0.001

0.01

0.1

I , COLLECTOR CURRENT (AMPS)

Figure 3. DC Current Gain @ 5 Volt

Figure 4. Collector–Emitter Saturation Voltage

1.5

I /I = 10

C B

I /I = 5

C B

T = -ā20°C

T = 25°C

T = -ā20°C

T = 25°C

0.5

0.1

T = 125°C

0.01

0.001

0.01

0.1

0.01

0.1

I , COLLECTOR CURRENT (AMPS)

Figure 5. Collector–Emitter Saturation Voltage

Figure 6. Base–Emitter Saturation Region

http://onsemi.com

BUH100

TYPICAL STATIC CHARACTERISTICS

1.5

T = 25°C

I /I = 10

C B

15 A

10 A

1.5

8 A

T = -ā20°C

5 A

3 A

T = 25°C

0.5

2 A

T = 125°C

0.5

CE(sat)

(I = 1 A)

0.001

0.01

0.1

0.01

0.1

I , BASE CURRENT (A)

I , COLLECTOR CURRENT (AMPS)

Figure 8. Collector Saturation Region

Figure 7. Base–Emitter Saturation Region

10000

1000

900

800

700

600

T = 25°C

BVCER @ 10 mA

= 1 MHz

(test)

100

500

400

BVCER(sus) @ 500 mA, 25 mH

100

1000

(Ω)

10000

100000

V , REVERSE VOLTAGE (VOLTS)

Figure 9. Capacitance

Figure 10. Resistive Breakdown

http://onsemi.com

BUH100

TYPICAL SWITCHING CHARACTERISTICS

2500

2000

1500

1000

= I

B1 B2

T = 125°C

T = 25°C

B1 B2

= 300 V

PW = 20 µs

PW = 40 µs

I /I = 10

C B

T = 125°C

T = 25°C

I /I = 5

C B

125°C

500

I /I = 10

C B

I /I = 5

C B

25°C

I , COLLECTOR CURRENT (AMPS)

Figure 11. Resistive Switching Time, t_on

Figure 12. Resistive Switch Time, t_off

= I

B1 B2

= I

B1 B2

I /I = 10

I /I = 5

V = 15 V

V = 300 V

V = 15 V

V = 300 V

L = 200 µH

T = 125°C

T = 25°C

T = 125°C

T = 25°C

I , COLLECTOR CURRENT (AMPS)

Figure 13. Inductive Storage Time, t_si

Figure 13 Bis. Inductive Storage Time, t_si

600

400

200

800

600

400

= I

T = 125°C

B1 B2

= I

B1 B2

V = 15 V

V = 300 V

T = 25°C

= 15 V

V = 300 V

L = 200 µH

200

I , COLLECTOR CURRENT (AMPS)

Figure 14. Inductive Storage Time,

t_c& t_fi@ I_C/I_B= 5

Figure 15. Inductive Storage Time,

t_c& t_fi@ I_C/I_B= 10

http://onsemi.com

BUH100

TYPICAL SWITCHING CHARACTERISTICS

200

I = 7.5 A

150

100

I = 5 A

I = 7.5 A

= I

I = 5 A

Boff B2

= I

B1 B2

V = 15 V

V = 300 V

V = 15 V

V = 300 V

T = 125°C

T = 25°C

L = 200 µH

T = 25°C

L = 200 µH

, FORCED GAIN

Figure 16. Inductive Storage Time

Figure 17. Inductive Fall Time

800

I = I

B1 B2

700

600

500

= 15 V

V = 300 V

L = 200 µH

I = 7.5 A

400

300

200

100

I = 5 A

T = 125°C

T = 25°C

, FORCED GAIN

Figure 18. Inductive Crossover Time, t_c

http://onsemi.com

BUH100

TYPICAL SWITCHING CHARACTERISTICS

90% I

dyn 1 µs

dyn 3 µs

10% I

10% V

0 V

clamp

90% I

1 µs

3 µs

TIME

Figure 19. Dynamic Saturation Voltage

Measurements

Figure 20. Inductive Switching Measurements

Table 1. Inductive Load Switching Drive Circuit

+15 V

I PEAK

100 µF

1 µF

100 Ω

3 W

MTP8P10

150 Ω

3 W

PEAK

MTP8P10

MPF930

I 1

MUR105

MJE210

MPF930

+10 V

out

I 2

50 Ω

COMMON

MTP12N10

150 Ω

3 W

(BR)CEO(sus)

L = 10 mH

Inductive Switching RBSOA

L = 200 µH L = 500 µH

500 µF

= ∞

= 20 Volts

= 100 mA

= 0

= 15 Volts

selected for

= 0

= 15 Volts

1 µF

desired I

R selected for

C(pk)

-V

off

desired I

http://onsemi.com

BUH100

TYPICAL THERMAL RESPONSE

0.8

0.6

0.4

SECOND BREAKDOWN

DERATING

THERMAL DERATING

0.2

100

120

140

160

T , CASE TEMPERATURE (°C)

Figure 21. Forward Bias Power Derating

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

may be calculated from the data in Figure 24. At any

J(pk)

case temperatures, thermal limitations will reduce the power

that can be handled to values less than the limitations

imposed by second breakdown. For inductive loads, high

voltage and current must be sustained simultaneously during

turn–off with the base to emitter junction reverse biased. The

safe level is specified as a reverse biased safe operating area

(Figure 23). This rating is verified under clamped conditions

so that the device is never subjected to an avalanche mode.

breakdown. Safe operating area curves indicate I –V

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate. The data of Figure 22 is

based on T = 25°C; T

is variable depending on power

J(pk)

level. Second breakdown pulse limits are valid for duty

cycles to 10% but must be derated when T > 25°C. Second

breakdown limitations do not derate the same as thermal

limitations. Allowable current at the voltages shown on

Figure 22 may be found at any case temperature by using the

appropriate curve on Figure 21.

100

GAIN ≥ 5

≤ 125°C

L = 2 mH

1 µs

1 ms

5 ms

10 µs

EXTENDED

SOA

0.1

-5 V

0 V

-1.5 V

600

0.01

100

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

1000

200

300

400

500

700

800

V , COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 22. Forward Bias Safe Operating Area

Figure 23. Reverse Bias Safe Operating Area

http://onsemi.com

BUH100

TYPICAL THERMAL RESPONSE

0.5

0.2

0.1

(pk)

(t) = r(t) R

= 1.25°C/W MAX

0.1

0.05

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t

0.02

SINGLE PULSE

- T = P

R (t)

J(pk)

(pk)

DUTY CYCLE, D = t /t

0.01

0.1

100

1000

t, TIME (ms)

Figure 24. Typical Thermal Response (Z_θ_JC(t)) for BUH100

http://onsemi.com

BUH100

PACKAGE DIMENSIONS

TO–220AB

CASE 221A–09

ISSUE AA

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

SEATING

PLANE

–T–

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

INCHES

DIM MIN MAX

MILLIMETERS

MIN

14.48

9.66

4.07

0.64

3.61

2.42

2.80

0.46

12.70

1.15

4.83

2.54

2.04

1.15

5.97

0.00

1.15

---

MAX

15.75

10.28

4.82

0.88

3.73

2.66

3.93

0.64

14.27

1.52

5.33

3.04

2.79

1.39

6.47

1.27

---

0.570

0.380

0.160

0.025

0.142

0.095

0.110

0.018

0.500

0.045

0.190

0.100

0.080

0.045

0.235

0.000

0.045

---

0.620

0.405

0.190

0.035

0.147

0.105

0.155

0.025

0.562

0.060

0.210

0.120

0.110

0.055

0.255

0.050

---

0.080

2.04

http://onsemi.com

BUH100

SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.

ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes

without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular

purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,

including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be

validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.

SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or

death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold

SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable

attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim

alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.

PUBLICATION ORDERING INFORMATION

NORTH AMERICA Literature Fulfillment:

CENTRAL/SOUTH AMERICA:

Literature Distribution Center for ON Semiconductor

P.O. Box 5163, Denver, Colorado 80217 USA

Spanish Phone: 303–308–7143 (Mon–Fri 8:00am to 5:00pm MST)

Email: ONlit–spanish@hibbertco.com

Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada

Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada

Email: ONlit@hibbertco.com

Toll–Free from Mexico: Dial 01–800–288–2872 for Access –

then Dial 866–297–9322

ASIA/PACIFIC: LDC for ON Semiconductor – Asia Support

Phone: 1–303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong Time)

Toll Free from Hong Kong & Singapore:

Fax Response Line: 303–675–2167 or 800–344–3810 Toll Free USA/Canada

N. American Technical Support: 800–282–9855 Toll Free USA/Canada

001–800–4422–3781

EUROPE: LDC for ON Semiconductor – European Support

German Phone: (+1) 303–308–7140 (Mon–Fri 2:30pm to 7:00pm CET)

Email: ONlit–german@hibbertco.com

French Phone: (+1) 303–308–7141 (Mon–Fri 2:00pm to 7:00pm CET)

Email: ONlit–french@hibbertco.com

Email: ONlit–asia@hibbertco.com

JAPAN: ON Semiconductor, Japan Customer Focus Center

4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031

Phone: 81–3–5740–2700

Email: r14525@onsemi.com

English Phone: (+1) 303–308–7142 (Mon–Fri 12:00pm to 5:00pm GMT)

Email: ONlit@hibbertco.com

ON Semiconductor Website: http://onsemi.com

EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781

For additional information, please contact your local

Sales Representative.

*Available from Germany, France, Italy, UK, Ireland

BUH100/D

http://onsemi.com

BUH100/D [ETC]

相关型号：

SI9130DB

SI9135LG-T1

SI9135LG-T1-E3

SI9135_11

SI9136_11

SI9130CG-T1-E3

SI9130LG-T1-E3

SI9130_11

SI9137

SI9137DB

SI9137LG

SI9122E