BS170/E6 [ETC]
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 300MA I(D) | TO-226AA ; 晶体管| MOSFET | N沟道| 60V V（ BR ） DSS | 300MA I（ D） | TO- 226AA\n
| 型号： | BS170/E6 |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 300MA I(D) | TO-226AA
|
| 文件： | 总5页 (文件大小：212K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BS170
Vishay Semiconductors
formerly General Semiconductor
DMOS Transistor (N-Channel)
TO-226AA (TO-92)
Features
0.142 (3.6)
0.181 (4.6)
• High input impedance
• High-speed switching
• No minority carrier storage time
• CMOS logic compatible input
• No thermal runaway
• No secondary breakdown
• On special request, this transistor is also
manufactured in the pin configuration TO-18.
Mechanical Data
Case: TO-92 Plastic Package
max.
0.022 (0.55)
Weight: approx. 0.18g
0.098 (2.5)
Dimensions in inches
and (millimeters)
Packaging Codes/Options:
E6/Bulk- 5K per container, 20K/box
E7/4K per Ammo tape, 20K/box
Bottom
View
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)
Parameter
Symbol
VDSS
VDGS
VGS
ID
Limit
Unit
V
Drain-Source Voltage
60
Drain-Gate Voltage
60
V
±
Gate-Source-Voltage (pulsed)
Drain Current (continuous)
Power Dissipation at Tamb = 25°C
Thermal Resistance Junction to Ambient Air
Junction Temperature
20
V
300
0.83(1)
mA
W
Ptot
RθJA
Tj
150(1)
°C/W
°C
150
Storage Temperature Range
TS
–65 to +150
°C
Note:
(1) Valid provided that leads are kept at ambient temperature at a distance of 2mm from case.
Document Number 88179
10-May-02
www.vishay.com
1
BS170
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics(TJ = 25°C unless otherwise noted)
Parameter
Symbol
V(BR)DSS
VGS(th)
IGSS
Test Condition
ID = 100µA, VGS = 0
VGS = VDS, ID = 1mA
VGS = 15V, VDS = 0
VDS = 25V, VGS = 0
VGS = 10V, ID = 0.2A
Min
60
1.0
—
Typ
80
2
Max
—
Unit
V
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Body Leakage Current
Drain Cutoff Current
3.0
10
V
—
nA
µA
Ω
IDSS
—
—
0.5
5.0
Drain-Source ON Resistance
RDS(on)
—
3.5
VDS = 10V, ID = 0.2A
f = 1MHz
Forward Transconductance
Input Capacitance
gm
—
—
200
30
—
—
mS
pF
VDS = 10V, VGS = 0,
f = 1MHz
Ciss
Turn-On Time
Turn-Off Time
ton
toff
—
—
5
—
—
ns
ns
VGS = 10V, VDS = 10V
RD = 100Ω
15
Inverse Diode
Parameters
Symbol
Test Condition
Value
Unit
Maximum Forward Current (continuous)
IF
Tamb = 25 °C
0.5
A
VGS = 0, IF = 0.5 A
Forward Voltage Drop (typ.)
VF
0.85
V
Tj = 25°C
www.vishay.com
2
Document Number 88179
10-May-02
BS170
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Document Number 88179
10-May-02
www.vishay.com
3
BS170
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
www.vishay.com
4
Document Number 88179
10-May-02
BS170
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Document Number 88179
10-May-02
www.vishay.com
5
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