BLP10H6120PGY [ETC]
RF MOSFET LDMOS 50V 4-HSOP;
| 型号： | BLP10H6120PGY |
| 厂家： | 
ETC |
| 描述： | RF MOSFET LDMOS 50V 4-HSOP |
| 文件： | 总15页 (文件大小：1878K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BLP10H6120P; BLP10H6120PG
Power LDMOS transistor
Rev. 1 — 20 December 2016
Product data sheet
1. Product profile
1.1 General description
A 120 W LDMOS power transistor for broadcast and industrial applications in the HF to
1000 MHz band.
Table 1.
Application information
Test signal
f
VDS
(V)
50
PL
Gp
D
(MHz)
720
915
915
(W)
120
160
143
(dB)
18
(%)
72
pulsed RF
pulsed RF
CW
50
14.9
15.1
70.2
62.3
50
1.2 Features and benefits
Easy power control
Integrated dual sided ESD protection enables class C operation and complete switch
off of the transistor
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (HF to 1000 MHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Industrial, scientific and medical applications
Broadcast transmitter applications
BLP10H6120P; BLP10H6120PG
Power LDMOS transistor
2. Pinning information
Table 2.
Pin
Pinning
Description
Simplified outline
Graphic symbol
BLP10H6120P (SOT1223-2)
1
2
3
4
5
gate 2
gate 1
drain 1
drain 2
source
4
3
4
1
5
2
pin 1 index
[1]
1
2
3
aaa-003574
BLP10H6120PG (SOT1224-2)
1
2
3
4
5
gate 2
gate 1
drain 1
drain 2
source
4
3
4
1
5
2
pin 1 index
[1]
1
2
3
aaa-003574
[1] Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
BLP10H6120P
HSOP4F plastic, heatsink small outline package; 4 leads (flat)
SOT1223-2
SOT1224-2
BLP10H6120PG HSOP4 plastic, heatsink small outline package; 4 leads
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
-
Max
110
+11
Unit
V
drain-source voltage
gate-source voltage
storage temperature
junction temperature
VGS
Tstg
6
65
-
V
+150 C
225 C
[1]
Tj
[1] Continuous use at maximum temperature will affect the reliability, for details refer to the online MTF
calculator.
BLP10H6120P_BLP10H6120PG
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 1 — 20 December 2016
2 of 15
BLP10H6120P; BLP10H6120PG
Power LDMOS transistor
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol Parameter
Conditions
Tj = 125 C
Typ
Unit
[1][2]
[3]
Rth(j-c)
Zth(j-c)
thermal resistance from junction to case
0.6
K/W
transient thermal impedance from junction Tj = 150 C; tp = 100 s;
0.21 K/W
to case
= 20 %
[1] Tj is the junction temperature.
[2] Rth(j-c) is measured under RF conditions.
[3] See Figure 1.
amp00146
0.8
Z
th(j-c)
(K/WW)
(7))
(6))
(5))
(4))
(3))
(2))
(1))
0.6
0.4
0.2
0
-7
-6
-5
-4
-3
-2
-1
t
10
10
10
10
10
10
10
1
(s)
p
(1) = 1 %
(2) = 2 %
(3) = 5 %
(4) = 10 %
(5) = 20 %
(6) = 50 %
(7) = 100 % (DC)
Fig 1. Transient thermal impedance from junction to case as a function of pulse
duration
6. Characteristics
Table 6.
DC characteristics
Tj = 25 C; per section unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max
110
1.25 1.9 2.25
Unit
V
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 500 A
-
-
VGS(th)
VGSq
IDSS
gate-source threshold voltage
gate-source quiescent voltage
drain leakage current
VDS = 10 V; ID = 50 mA
VDS = 50 V; ID = 20 mA
VGS = 0 V; VDS = 50 V
V
-
-
1.7
-
-
V
1.4
A
BLP10H6120P_BLP10H6120PG
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© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 1 — 20 December 2016
3 of 15
BLP10H6120P; BLP10H6120PG
Power LDMOS transistor
Table 6.
DC characteristics …continued
Tj = 25 C; per section unless otherwise specified.
Symbol Parameter Conditions
Min Typ Max
Unit
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
-
7.8
-
A
IGSS
gate leakage current
VGS = 11 V; VDS = 0 V
-
-
-
140
-
nA
RDS(on)
drain-source on-state resistance VGS = VGS(th) + 3.75 V;
ID = 1.75 A
0.6
Table 7.
AC characteristics
Tj = 25 C; per section unless otherwise specified.
Symbol Parameter Conditions
feedback capacitance VGS = 0 V; VDS = 50 V; f = 1 MHz
Min Typ Max Unit
Crs
-
-
-
0.31
55.1
16.8
-
-
-
pF
pF
pF
Ciss
Coss
input capacitance
output capacitance
VGS = 0 V; VDS = 50 V; f = 1 MHz
VGS = 0 V; VDS = 50 V; f = 1 MHz
Table 8.
RF characteristics
Test signal: pulsed RF; tp = 100 s; = 20 %; f = 720 MHz; RF performance at VDS = 50 V;
IDq = 80 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit.
Symbol
Gp
Parameter
Conditions
PL = 120 W
PL = 120 W
PL = 120 W
Min
16.8
-
Typ
18
Max
Unit
power gain
-
-
-
dB
dB
%
RLin
D
input return loss
drain efficiency
20
72
70
amp00005
80
C
oss
(pF)
60
40
20
0
0
10
20
30
40
50
60
V
DS
(V)
VGS = 0 V; f = 1 MHz.
Fig 2. Output capacitance as a function of drain-source voltage; typical values per
section
BLP10H6120P_BLP10H6120PG
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 1 — 20 December 2016
4 of 15
BLP10H6120P; BLP10H6120PG
Power LDMOS transistor
7. Test information
7.1 Ruggedness in class-AB operation
The BLP10H6120P and BLP10H6120PG are capable of withstanding a load mismatch
corresponding to VSWR > 40 : 1 through all phases under the following conditions:
V
DS = 50 V; IDq = 80 mA; PL = 120 W pulsed; f = 720 MHz.
7.2 Impedance information
drain 1
gate 1
Z
Z
L
i
gate 2
drain 2
001aan207
Fig 3. Definition of transistor impedance
Table 9.
Typical push-pull impedance
Simulated Zi and ZL device impedance; impedance info at VDS = 50 V and PL = 120 W.
f
Zi
ZL
(MHz)
720
()
()
4.4 j6.4
10 + j11.2
BLP10H6120P_BLP10H6120PG
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 1 — 20 December 2016
5 of 15
BLP10H6120P; BLP10H6120PG
Power LDMOS transistor
7.3 Test circuit
200 mm
C7
C5
L3
R1
C15
R2
C17
R7
L2
C19
R5
C10
C13
C1
C2
C3 C4
C9
C12
80 mm
C14
C11
C20
R6
L1
R4
C18
R8
L4
R3
C8
C16
C6
amp00147
Printed-Circuit Board (PCB): RF-35; r = 3.5 F/m; thickness = 0.765 mm; thickness copper plating = 35 m.
See Table 10 for a list of components.
Fig 4. Component layout for class-AB production test circuit
Table 10. List of components
For test circuit see Figure 4.
Component
C1, C2
C3
Description
Value
Remarks
ATC 800B
ATC 100A
ATC 100A
ATC 100A
multilayer ceramic chip capacitor 15 pF
multilayer ceramic chip capacitor 4.3 pF
multilayer ceramic chip capacitor 9.1 pF
multilayer ceramic chip capacitor 150 pF
C4
C5, C6
C7, C8
C9
electrolytic capacitor
1 F, 50 V
GRM32RR71H105KA01L
ATC 800B
multilayer ceramic chip capacitor 11 pF
multilayer ceramic chip capacitor 10 pF
multilayer ceramic chip capacitor 6.2 pF
multilayer ceramic chip capacitor 33 pF
multilayer ceramic chip capacitor 150 pF
multilayer ceramic chip capacitor 4.7 F, 100 V
C10, C11
C12
ATC 800B
ATC 800B
C13, C14
C15, C16
C17, C18
C19, C20
L1
ATC 800B
ATC 800B
TDK: C5750X7R2A475KT/A
electrolytic capacitor
coaxial balun
coaxial balun
inductor
1000 F, 63 V Vishay
L = 64.8 mm
L = 64.8 mm
90 nH
EZ_86_TP_M17
EZ_86_TP_M17
132-9SMGL
L2
L3, L4
R1, R2, R3, R4 resistor
4.7
SMD 1206
R5, R6
R7, R8
resistor
resistor
10 m, 5 W
7.5
FCL4L110R010FER
SMD 1206
BLP10H6120P_BLP10H6120PG
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 1 — 20 December 2016
6 of 15
BLP10H6120P; BLP10H6120PG
Power LDMOS transistor
7.4 Graphical data
amp00149
amp00148
58
20
18
16
14
12
80
60
40
20
0
PP
L
G
ηη
D
(%)
p
(dBBm))
(dB)
Iddeeaall PP
L
54
(2)
P
L
(1)
50
46
42
G
p
η
D
0
20
40
60
80 100 120 140 160
(W)
26
28
30
32
34
36
P (dBm)
38
P
L
i
VDS = 50 V; IDq = 80 mA; f = 720 MHz; tp = 100 s;
= 20 %.
VDS = 50 V; IDq = 80 mA; f = 720 MHz; tp = 100 s;
= 20 %.
(1) PL(1dB) = 50.8 dBm (120 W) at Pi = 33 dBm
(2) PL(3dB) = 51.3 dBm (135.7 W) at Pi = 35.6 dBm
Fig 5. Power gain and drain efficiency as function of
output power; typical values
Fig 6. Output power as a function of input power;
typical values
BLP10H6120P_BLP10H6120PG
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 1 — 20 December 2016
7 of 15
BLP10H6120P; BLP10H6120PG
Power LDMOS transistor
amp00150
amp00151
22
20
18
16
14
12
10
80
60
40
20
0
G
η
D
(%)
p
(dB)
(1))
(2))
(3))
(4))
(5))
(6))
(7))
(8))
(8)
(7)
(6)
(5)
(4)
(3)
(2)
(1)
0
20
40
60
80 100 120 140 160
(W)
0
20
40
60
80 100 120 140 160
P
P (W)
L
L
VDS = 50 V; f = 720 MHz; tp = 100 s; = 20 %.
VDS = 50 V; f = 720 MHz; tp = 100 s; = 20 %.
(1) IDq = 20 mA
(2) IDq = 40 mA
(3) IDq = 80 mA
(4) IDq = 160 mA
(5) IDq = 240 mA
(6) IDq = 320 mA
(7) IDq = 400 mA
(8) IDq = 480 mA
(1) IDq = 20 mA
(2) IDq = 40 mA
(3) IDq = 80 mA
(4) IDq = 160 mA
(5) IDq = 240 mA
(6) IDq = 320 mA
(7) IDq = 400 mA
(8) IDq = 480 mA
Fig 7. Power gain as a function of output power;
typical values
Fig 8. Drain efficiency as a function of output power;
typical values
BLP10H6120P_BLP10H6120PG
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 1 — 20 December 2016
8 of 15
BLP10H6120P; BLP10H6120PG
Power LDMOS transistor
amp00152
amp00153
22
20
18
16
14
12
10
80
60
40
20
0
G
η
D
(%)
p
(1))
(2))
(dB)
(3))
(4))
(5))
(6))
(7))
(1)
(2)
(3)
(4)
(5)
(6)
(7))
20
0
40
60
80 100 120 140 160
(W)
0
20
40
60
80 100 120 140 160
(W)
P
P
L
L
IDq = 80 mA; f = 720 MHz; tp = 100 s; = 20 %.
IDq = 80 mA; f = 720 MHz; tp = 100 s; = 20 %.
(1) VDS = 50 V
(2) VDS = 45 V
(3) VDS = 40 V
(4) VDS = 35 V
(5) VDS = 30 V
(6) VDS = 25 V
(7) VDS = 20 V
(1) VDS = 50 V
(2) VDS = 45 V
(3) VDS = 40 V
(4) VDS = 35 V
(5) VDS = 30 V
(6) VDS = 25 V
(7) VDS = 20 V
Fig 9. Power gain as a function of output power;
typical values
Fig 10. Drain efficiency as a function of output power;
typical values
BLP10H6120P_BLP10H6120PG
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 1 — 20 December 2016
9 of 15
BLP10H6120P; BLP10H6120PG
Power LDMOS transistor
8. Package outline
HSOP4F: plastic, heatsink small outline package; 4 leads(flat)
SOT1223-2
D
E
X
c
B
A
D
3
E
3
y
v
A
H
E
D
D
1
2
b
w
B
4
3
(8x) METAL
PROTRUSIONS (SOURCE)
F (4x)
e
(2x)
4
e
(2x)
3
E
E
1
2
A
A
2
A
pin 1 index
1
Q
1
detail X
1
2
e
2
(2x)
1
e
(2x)
e
Q
v
w
y
1
1.62
0.1
1.57 0.25 0.25
1.52
0
2
10 mm
scale
Dimensions (mm are the original dimensions)
Unit
(1)
(1)
E
A
A
A
b
c
D
D
1
D
D
3
E
E
E
e
e
e
e
e
F
H
E
1
2
1
2
3
1
2
3
4
max 3.9 0.2 3.65 3.90 0.27 20.62 19.00 16.05 20.44 10.01 8.18 5.89 9.83
16.16
0.1 3.60 3.85 0.22 20.57 18.95 16.00 20.39 9.96 8.13 5.84 9.78 8.85 8.45 9.55 2.97 4.07 0.4 15.96
3.55 3.80 0.17 20.52 18.90 15.95 20.34 9.91 8.08 5.79 9.73 15.76
nom
min
mm
0
Note
1. Package body dimensions “D and “E do not include mold and metal protrusions. Allowable protrusion is 0.25 mm per side.
2. Lead width dimension “b does not include dambar protrusions. Allowable dambar protrusion is 0.25 mm in total per lead.
sot1223-2_po
References
Outline
version
European
projection
Issue date
IEC
JEDEC
JEITA
15-01-12
15-06-04
SOT1223-2
Fig 11. Package outline SOT1223-2 (HSOP4F)
BLP10H6120P_BLP10H6120PG
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 1 — 20 December 2016
10 of 15
BLP10H6120P; BLP10H6120PG
Power LDMOS transistor
HSOP4: plastic, heatsink small outline package; 4 leads
SOT1224-2
X
D
E
c
D
3
B
E
A
3
y
v
A
H
E
D
1
D
2
b
w
B
4
3
(8x) METAL
PROTRUSIONS (SOURCE)
e
(2x)
4
e
(2x)
3
Q
E
E
1
A
A
2
2
(A3)
A
A
4
pin 1 index
1
L
p
θ
H
1
2
detail X
e
2
(2x)
1
e
(2x)
e
H
L
Q
v
w
y
θ
°
°
°
E
p
13.5 1.10 2.07
13.2 0.95 2.02 0.25 0.25
12.9 0.80 1.97
0.1
7
3
0
0
10 mm
scale
Dimensions (mm are the original dimensions)
Unit
(1)
(1)
E
A
A
A
A
A
b
c
D
D
1
D
D
3
E
E
2
E
e
e
1
e
2
e
e
1
2
3
4
2
1
3
3
4
max 3.9 0.2 3.65
0.06 3.90 0.27 20.62 19.00 16.05 20.44 10.01 8.18 5.89 9.83
3.85 0.22 20.57 18.95 16.00 20.39 9.96 8.13 5.84 9.78 8.85 8.45 9.55 2.97 4.07
-0.02 3.80 0.17 20.52 18.90 15.95 20.34 9.91 8.08 5.79 9.73
nom
min
mm
0.1 3.60 0.35
3.55
0
0
Note
1. Package body dimensions “D and “E do not include mold and metal protrusions. Allowable protrusion is 0.25 mm per side.
2. Lead width dimension “b does not include dambar protrusions. Allowable dambar protrusion is 0.25 mm in total per lead.
3. Dimension A is measured with respect to bottom of the heatsink DATUM H. Positive value means that the bottom of the heatsink
4
is higher than the bottom of the lead.
sot1224-2_po
References
Outline
version
European
projection
Issue date
IEC
JEDEC
JEITA
15-01-13
15-06-04
SOT1224-2
Fig 12. Package outline SOT1224-2 (HSOP4)
BLP10H6120P_BLP10H6120PG
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 1 — 20 December 2016
11 of 15
BLP10H6120P; BLP10H6120PG
Power LDMOS transistor
9. Handling information
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
Table 11. ESD sensitivity
ESD model
Class
C1 [1]
1C [2]
Charged Device Model (CDM); According to ANSI/ESDA/JEDEC standard JS-002
Human Body Model (HBM); According to ANSI/ESDA/JEDEC standard JS-001
[1] CDM classification C1 is granted to any part that passes after exposure to an ESD pulse of 250 V, but fails
after exposure to an ESD pulse of 500 V.
[2] HBM classification 1C is granted to any part that passes after exposure to an ESD pulse of 1000 V, but fails
after exposure to an ESD pulse of 2000 V.
10. Abbreviations
Table 12. Abbreviations
Acronym
CW
Description
Continuous Wave
ESD
ElectroStatic Discharge
High Frequency
HF
LDMOS
MTF
Laterally Diffused Metal-Oxide Semiconductor
Median Time to Failure
SMD
Surface Mounted Device
Voltage Standing-Wave Ratio
VSWR
11. Revision history
Table 13. Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BLP10H6120P_BLP10H6120PG v.1
20161220
Product data sheet
-
-
BLP10H6120P_BLP10H6120PG
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 1 — 20 December 2016
12 of 15
BLP10H6120P; BLP10H6120PG
Power LDMOS transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.ampleon.com.
Ampleon product can reasonably be expected to result in personal injury,
12.2 Definitions
death or severe property or environmental damage. Ampleon and its
suppliers accept no liability for inclusion and/or use of Ampleon products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Ampleon does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Ampleon makes no representation
or warranty that such applications will be suitable for the specified use without
further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Ampleon sales office. In
case of any inconsistency or conflict with the short data sheet, the full data
sheet shall prevail.
Customers are responsible for the design and operation of their applications
and products using Ampleon products, and Ampleon accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Ampleon product is suitable and
fit for the customer’s applications and products planned, as well as for the
planned application and use of customer’s third party customer(s). Customers
should provide appropriate design and operating safeguards to minimize the
risks associated with their applications and products.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Ampleon and its customer, unless Ampleon and customer have explicitly
agreed otherwise in writing. In no event however, shall an agreement be valid
in which the Ampleon product is deemed to offer functions and qualities
beyond those described in the Product data sheet.
Ampleon does not accept any liability related to any default, damage, costs or
problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Ampleon products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Ampleon does not accept any
liability in this respect.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, Ampleon does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. Ampleon takes no responsibility for
the content in this document if provided by an information source outside of
Ampleon.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
In no event shall Ampleon be liable for any indirect, incidental, punitive,
special or consequential damages (including - without limitation - lost profits,
lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Terms and conditions of commercial sale — Ampleon products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.ampleon.com/terms, unless otherwise agreed in a valid written
individual agreement. In case an individual agreement is concluded only the
terms and conditions of the respective agreement shall apply. Ampleon
hereby expressly objects to applying the customer’s general terms and
conditions with regard to the purchase of Ampleon products by customer.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Ampleon’s aggregate and cumulative liability towards customer
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale of Ampleon.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Right to make changes — Ampleon reserves the right to make changes to
information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Suitability for use — Ampleon products are not designed, authorized or
warranted to be suitable for use in life support, life-critical or safety-critical
systems or equipment, nor in applications where failure or malfunction of an
BLP10H6120P_BLP10H6120PG
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 1 — 20 December 2016
13 of 15
BLP10H6120P; BLP10H6120PG
Power LDMOS transistor
Non-automotive qualified products — Unless this data sheet expressly
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
states that this specific Ampleon product is automotive qualified, the product
is not suitable for automotive use. It is neither qualified nor tested in
accordance with automotive testing or application requirements. Ampleon
accepts no liability for inclusion and/or use of non-automotive qualified
products in automotive equipment or applications.
12.4 Trademarks
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without Ampleon’ warranty of the product for such
automotive applications, use and specifications, and (b) whenever customer
uses the product for automotive applications beyond Ampleon’ specifications
such use shall be solely at customer’s own risk, and (c) customer fully
indemnifies Ampleon for any liability, damages or failed product claims
resulting from customer design and use of the product for automotive
applications beyond Ampleon’ standard warranty and Ampleon’ product
specifications.
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Any reference or use of any ‘NXP’ trademark in this document or in or on the
surface of Ampleon products does not result in any claim, liability or
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of
the NXP group of companies and any reference to or use of the ‘NXP’
trademarks will be replaced by reference to or use of Ampleon’s own
trademarks.
13. Contact information
For more information, please visit: http://www.ampleon.com
For sales office addresses, please visit: http://www.ampleon.com/sales
BLP10H6120P_BLP10H6120PG
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 1 — 20 December 2016
14 of 15
BLP10H6120P; BLP10H6120PG
Power LDMOS transistor
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits. . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
2
3
4
5
6
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
7
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 5
Ruggedness in class-AB operation . . . . . . . . . 5
Impedance information . . . . . . . . . . . . . . . . . . . 5
Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 7
7.1
7.2
7.3
7.4
8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
Handling information. . . . . . . . . . . . . . . . . . . . 12
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . . 13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
12.1
12.2
12.3
12.4
13
14
Contact information. . . . . . . . . . . . . . . . . . . . . 14
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© Ampleon Netherlands B.V. 2016.
All rights reserved.
For more information, please visit: http://www.ampleon.com
For sales office addresses, please visit: http://www.ampleon.com/sales
Date of release: 20 December 2016
Document identifier: BLP10H6120P_BLP10H6120PG
相关型号：
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