BLP05H6700XRY_技术文档

BLP05H6700XR;

BLP05H6700XRG

Power LDMOS transistor

Rev. 2 — 13 September 2018

Product data sheet

1. Product profile

1.1 General description

A 700 W extra rugged LDMOS power transistor optimized for broadcast, industrial,

aerospace and defense applications in the HF to 600 MHz band.

Table 1.

Application information

Test signal

f

V_DS

(V)

50

P_L

G_p

η_D

(MHz)

108

(W)

700

(dB)

26

(%)

75

pulsed RF

1.2 Features and benefits

 Easy power control

 Integrated dual sided ESD protection enables class C operation and complete switch

off of the transistor

 Excellent ruggedness VSWR 65 : 1

 High efficiency

 Excellent thermal stability

 Designed for broadband operation (HF to 600 MHz)

 50 V operation for easy broadband matching

 Package available in both straight leads and gull wing form

 For RoHS compliance see the product details on the Ampleon website

1.3 Applications

 Industrial, scientific and medical applications

 Broadcast transmitter applications

 Aerospace and defense applications

BLP05H6700XR; BLP05H6700XRG

Power LDMOS transistor

2. Pinning information

Table 2.

Pinning

Description

Simplified outline

Graphic symbol

BLP05H6700XR (SOT1138-3)

1

2

3

4

5

gate 2

gate 1

drain 1

drain 2

source

4

1

3

2

1

2

5

[1]

3

aaa-003574

BLP05H6700XRG (SOT1204-3)

1

2

3

4

5

gate 2

gate 1

drain 1

drain 2

source

4

1

3

2

1

2

5

[1]

3

aaa-003574

[1] Connected to flange.

3. Ordering information

Table 3.

Ordering information

Type number

Package

Name

Description

Version

BLP05H6700XR

-

plastic, heatsink small outline package; 4 leads (flat) SOT1138-3

plastic, heatsink small outline package; 4 leads SOT1204-3

BLP05H6700XRG

4. Limiting values

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

V_DS

Parameter

Conditions

Min

Max

135

+11

Unit

V

drain-source voltage

gate-source voltage

storage temperature

case temperature

junction temperature

-

V_GS

6

V

T_stg

65

+150 C

T_case

T_j

-

150

225

C

[1]

[1] Continuous use at maximum temperature will affect the reliability, for details refer to the online MTF

calculator.

BLP05H6700XR_H6700XRG

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Product data sheet

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BLP05H6700XR; BLP05H6700XRG

Power LDMOS transistor

5. Thermal characteristics

Table 5.

Symbol Parameter

R_th(j-case)thermal resistance from junction to case T_j= 150 C

Thermal characteristics

Conditions

Typ

Unit

[1][2]

[3]

0.21 K/W

0.064 K/W

Z_th(j-case)transient thermal impedance from

junction to case

T_j= 150 C; t_p= 100 s;

 = 20 %

[1] T_jis the junction temperature.

[2]

R_th(j-c)is measured under RF conditions.

[3] see Figure 1.

amp00265

0.25

Z

th(j-c)

(K/W)

0.2

(7)

(6)

(5)

(4)

(3)

(2)

(1)

0.15

0.1

0.05

0

-7

-6

-5

-4

-3

-2

-1

t

10

1

(s)

p

(1)  = 1 %

(2)  = 2 %

(3)  = 5 %

(4)  = 10 %

(5)  = 20 %

(6)  = 50 %

(7)  = 100 % (DC)

Fig 1. Transient thermal impedance from junction to case as a function of pulse

duration

BLP05H6700XR_H6700XRG

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Product data sheet

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BLP05H6700XR; BLP05H6700XRG

Power LDMOS transistor

6. Characteristics

Table 6.

DC characteristics

T_j= 25 °C per section; unless otherwise specified.

Symbol Parameter Conditions

V_(BR)DSSdrain-source breakdown voltage V_GS= 0 V; I_D= 2.75 mA 135

Min

Typ

Max Unit

-

V

V_GS(th)

V_GSq

I_DSS

gate-source threshold voltage

gate-source quiescent voltage

drain leakage current

V_DS= 10 V; I_D= 275 mA 1.33 1.9

2.33

V

V_DS= 50 V; I_D= 50 mA

V_GS= 0 V; V_DS= 50 V

V_GS= V_GS(th)+ 3.75 V;

-

2.1

-

V

1.4

-

A

A

I_DSX

drain cut-off current

36

V_DS= 10 V

I_GSS

gate leakage current

V_GS= 11 V; V_DS= 0 V

-

140

-

nA

R_DS(on)drain-source on-state resistance V_GS= V_GS(th)+ 3.75 V;

I_D= 9.625 A

0.16



Table 7.

AC characteristics

T_j= 25 °C per section; unless otherwise specified.

Symbol Parameter Conditions

feedback capacitance V_GS= 0 V; V_DS= 50 V; f = 1 MHz

Min Typ

Max Unit

C_rs

-

2.75

297

104

-

pF

C_iss

C_oss

input capacitance

output capacitance

V_GS= 0 V; V_DS= 50 V; f = 1 MHz

Table 8.

RF characteristics

Test signal: pulsed RF; t_p= 100 μs; δ = 20 %; f = 108 MHz; RF performance at V_DS= 50 ;

_Dq= 100 mA; T_case= 25 °C; unless otherwise specified; in a class-AB production test circuit.

I

Symbol

Parameter

Conditions

P_L= 700 W

Min

25

-

Typ

26

Max

Unit

G_p

power gain

-

dB

%

RL_in

_D

input return loss

drain efficiency

13

75

72

BLP05H6700XR_H6700XRG

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Product data sheet

Rev. 2 — 13 September 2018

4 of 16

BLP05H6700XR; BLP05H6700XRG

Power LDMOS transistor

amp00266

600

C

oss

(pF)

500

400

300

200

100

0

10

20

30

40

50

60

V

(V)

DS

V_GS= 0 V; f = 1 MHz.

Fig 2. Output capacitance as a function of drain-source voltage; typical values per

section

7. Test information

7.1 Ruggedness in class-AB operation

The BLP05H6700XR and the BLP05H6700XRG are capable of withstanding a load

mismatch corresponding to VSWR > 65 : 1 through all phases under the following

conditions: V_DS= 50 V; I_Dq= 100 mA; P_L= 700 W pulsed; f = 108 MHz.

7.2 Impedance information

drain 1

gate 1

Z

L

i

gate 2

drain 2

001aan207

Fig 3. Definition of transistor impedance

Table 9.

Typical push-pull impedance

Simulated Z_iand Z_Ldevice impedance; impedance info at V_DS= 50 V and P_L= 700 W.

f

Z_i

Z_L

(MHz)

108

(Ω)

5.9  j19.1

5.5 + j1.1

BLP05H6700XR_H6700XRG

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Product data sheet

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BLP05H6700XR; BLP05H6700XRG

Power LDMOS transistor

7.3 Test circuit

200 mm

C23

-

+

L3

R5

R3

L1

T2

C6

C8

C10

C12

R1

C14

C17

C2

C4

C3

C20

C21

C5

C1

C16

80 mm

C18

C19

C22

C15

R2

C9

C7

C13

R6

L2

C11

T1

R4

L4

17 mm

22 mm

-

+

C24

amp00267

Printed-Circuit Board (PCB): Taconic RF-35; _r= 3.5 F/m; thickness = 0.765 mm; thickness copper plating = 35 m.

See Table 10 for a list of components.

Fig 4. Component layout for class-AB production test circuit

Table 10. List of components

For test circuit see Figure 4.

Component Description

Value

Remarks

ATC 100B

[1]

C1

multilayer ceramic chip capacitor

510 pF

62 pF

C2, C3

C4

20 pF

C5

160 pF

4.7 F, 100 V

820 pF

820pF

C6, C7

C8, C9

C10, C11

C12, C13

C14, C15

C16

[1]

ATC 100B

4.7 F, 100 V

91 pF

[1]

ATC 100B

36 pF

C17

22 pF

C18, C19

C20, C21

47 pF

120 pF

BLP05H6700XR_H6700XRG

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Product data sheet

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BLP05H6700XR; BLP05H6700XRG

Power LDMOS transistor

Table 10. List of components …continued

For test circuit see Figure 4.

Component Description

Value

Remarks

[1]

C22

multilayer ceramic chip capacitor

220 pF

ATC 100B

C23, C24

L1, L2

L3, L4

R1, R2

R3, R4

R5, R6

T1, T2

electrolytic capacitor

air inductor

2200 F, 64 V

10 turns, d = 2 mm

6 turns, d = 2 mm

4.7 k

0.5 mm copper wire

SMD 1206

air inductor

resistor

shunt resistor

metal film resistor

semi rigid coax

0.01 

FC4L110R010FER

10 , 0.6 W

50 , 160 mm

EZ 86-TP/M17

[1] American Technical Ceramics type 100B or capacitor of same quality.

7.4 Graphical data

amp0026ꢀ

amp00268

63

28

26

24

22

20

80

60

40

20

0

PP

L

G

η

D

(%)

p

(dBm)

(dB)

Iddeeaall PP

L

61

(2)

(1)

59

57

55

G

p

PP

L

η

D

0

100 200 300 400 500 600 700 800

(W)

28

29

30

31

32

33

34

35

P

P (dBm)

L

i

V_DS= 50 V; I_Dq= 100 mA; f = 108 MHz; t_p= 100 s;

 = 20 %.

V_DS= 50 V; I_Dq= 100 mA; f = 108 MHz; t_p= 100 s;

 = 20 %.

(1) P_L(1dB)= 58.4 dBm (692 W)

(2) P_L(3dB)= 58.8 dBm (765 W)

Fig 5. Power gain and drain efficiency as function of

output power; typical values

Fig 6. Output power as a function of input power;

typical values

BLP05H6700XR_H6700XRG

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Product data sheet

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BLP05H6700XR; BLP05H6700XRG

Power LDMOS transistor

amp00270

amp00271

30

28

26

24

22

20

80

60

40

20

0

G

η

D

(%)

p

(dB)

(1)

(2)

(3)

(4)

(1)

(2)

(3)

(4)

0

100 200 300 400 500 600 700 800

(W)

0

100 200 300 400 500 600 700 800

P

P (W)

L

V_DS= 50 V; f = 108 MHz; t_p= 100 s;  = 20 %.

V_DS= 50 V; f = 108MHz; t_p= 100 s;  = 20 %.

(1) I_Dq= 50 mA

(2) I_Dq= 100 mA

(3) I_Dq= 200 mA

(4) I_Dq= 400 mA

(1) I_Dq= 50 mA

(2) I_Dq= 100 mA

(3) I_Dq= 200 mA

(4) I_Dq= 400 mA

Fig 7. Power gain as a function of output power;

typical values

Fig 8. Drain efficiency as a function of output power;

typical values

amp00272

amp00273

(6)

30

80

(2)

(3)

(5)

(4)

(1)

G

η

D

(%)

p

(dB)

28

26

24

22

20

60

40

20

0

(6)

(5)

(4)

(3)

(2)

(1)

0

100 200 300 400 500 600 700 800

(W)

0

100 200 300 400 500 600 700 800

(W)

P

L

I_Dq= 100 mA; f = 108 MHz; t_p= 100 s;  = 20 %.

(1) V_DS= 25 V

(2) V_DS= 30 V

(3) V_DS= 35 V

(4) V_DS= 40 V

(5) V_DS= 45 V

(6) V_DS= 50 V

(1) V_DS= 25 V

(2) V_DS= 30 V

(3) V_DS= 35 V

(4) V_DS= 40 V

(5) V_DS= 45 V

(6) V_DS= 50 V

Fig 9. Power gain as a function of output power;

typical values

Fig 10. Drain efficiency as a function of output power;

typical values

BLP05H6700XR_H6700XRG

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Product data sheet

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BLP05H6700XR; BLP05H6700XRG

Power LDMOS transistor

8. Package outline

SOT1138-3

(18.01)

(15.44)

(2.15)

(0.75)

E

0.10 (4)

A

6.85

3

4

0.05 A

L

16.00

P

2.00 0.1Z

0.10

R0.16 max.

1

2

metal protrusion 4x

1.57 (5)

0.22 0.05

(ground) in corners (2)

0.25 B

5.85(3)

L

B

R1.00

20.75(1)

20.57

0.05 B

+0.08

L

3.92

-

0.03

B

R0.32

(0.20) molding compound rim

around the perimeter of the heatsink

pin 5 (6)

R0.60 (4x)

Min. 15.5

Min. 18.5

1

Tolerances unless otherwise stated:

Angle:

Revision:

Revision date:

Package outline drawing:

SOT1138-3

7/26/2018

B

1°

Dimension:

B

0.05

units in mm.

Third angle projection

Sheet 1 of 2

Fig 11. Package outline SOT1138-3 (sheet 1 of 2)

BLP05H6700XR_H6700XRG

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Product data sheet

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BLP05H6700XR; BLP05H6700XRG

Power LDMOS transistor

SOT1138-3

Drawing Notes

Description

Items

(1)

Dimensions are excluding mold protrusion. All areas located adjacent to the leads have a maximum mold protrusion of 0.25

mm (per side) and max. 0.62 mm in length.

At all other areas the mold protrusion is maximum 0.15 mm per side. See also detail B.

The metal protrusion (tie bars) in the corner will not stick out of the molding compound protrusions (detail A).

The lead dambar (metal) protrusions are not included. Add 0.14 mm max to the total lead dimension at the dambar location.

The lead coplanarity over all leads is 0.1 mm maximum.

(2)

(3)

(4)

(5)

(6)

(7)

Dimension is measured 0.5 mm from the edge of the top package body.

The hatched area indicates the exposed metal heatsink.

The leads and exposed heatsink are plated with matte Tin (Sn).

location of metal protrusion (2)

B

DETAIL A

SCALE 25:1

A

lead dambar

location

DETAIL

B

SCALE 50:1

1

Tolerances unless otherwise stated:

Angle:

Revision:

Revision date:

Package outline drawing:

SOT1138-3

7/26/2018

B

1°

Dimension:

B

0.05

units in mm.

Third angle projection

Sheet 2 of 2

Fig 12. Package outline SOT1138-3 (sheet 2 of 2)

BLP05H6700XR_H6700XRG

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Product data sheet

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10 of 16

BLP05H6700XR; BLP05H6700XRG

Power LDMOS transistor

SOT1204-3

(18.01)

(15.44)

(2.15)

(0.75)

6.85

R1.38

A

4

3

0.05 A

L

16.00

P

2.00 0.1

Z

2

R0.16 max.

1

metal protrusion 4x

C

(ground) in corners (2)

5.85 (3)

0.25 B

L

20.75(1)

0.05 B

L

+

-

0.08

DETAIL

C

3.92

R1.00

0.03

SCALE 25:1

R0.32

H

B

20.57

0.10

(0.20) molding compound rim

around the perimeter of the heatsink

+

0.06

0.02

0.00

(6)

-

+

4°

3°

3.0°

Gage plane

0.35 (7)

-

Seating plane

R0.60(4x)

pin 5 (4)

Min. 15.5

Min. 18.5

1

Tolerances unless otherwise stated:

Angle:

Revision:

Revision date:

Package outline drawing:

SOT1204-3

7/26/2018

B

1°

Dimension:

B

0.05

units in mm.

Third angle projection

Sheet 1 of 2

Fig 13. Package outline SOT1204-3 (sheet 1 of 2)

BLP05H6700XR_H6700XRG

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Product data sheet

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BLP05H6700XR; BLP05H6700XRG

Power LDMOS transistor

SOT1204-3

Drawing Notes

Description

Items

(1)

Dimensions are excluding mold protrusion. All areas located adjacent to the leads have a maximum mold protrusion of 0.25

mm (per side) and 0.62 mm max. in length.

At other areas the mold protrusion is maximum 0.15 mm per side. See also detail B.

The metal protrusion (tie bars) in the corner will not stick out of the molding compound protrusions (detail A).

The lead dambar (metal) protrusions are not included. Add 0.14 mm max to the total lead dimension at the dambar location.

The hatched area indicated the exposed heatsink.

(2)

(3)

(4)

(5)

The leads and exposed heatsink are plated with matte Tin (Sn).

Dimension is measured with respect to the bottom of the heatsink Datum H. Positive value means that the bottom of the

heatsink is higher than the bottom of the lead.

(6)

(7)

Gage plane (foot length) to be measured from the seating plane.

location of metal protrusion (2)

B

DETAIL

A

SCALE 25:1

A

lead dambar

location

DETAIL

B

SCALE 50:1

1

Tolerances unless otherwise stated:

Angle:

Revision:

Revision date:

Package outline drawing:

SOT1204-3

7/26/2018

B

1°

Dimension:

B

0.05

units in mm.

Third angle projection

Sheet 2 of 2

Fig 14. Package outline SOT1204-3 (sheet 2 of 2)

BLP05H6700XR_H6700XRG

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Product data sheet

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12 of 16

BLP05H6700XR; BLP05H6700XRG

Power LDMOS transistor

9. Handling information

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling

electrostatic sensitive devices.

Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or

equivalent standards.

Table 11. ESD sensitivity

ESD model

Class

C2A ^[1]

2 ^[2]

Charged Device Model (CDM); According to ANSI/ESDA/JEDEC standard JS-002

Human Body Model (HBM); According to ANSI/ESDA/JEDEC standard JS-001

[1] CDM classification C2A is granted to any part that passes after exposure to an ESD pulse of 500 V.

[2] HBM classification 2 is granted to any part that passes after exposure to an ESD pulse of 2000 V.

10. Abbreviations

Table 12. Abbreviations

Acronym

ESD

Description

ElectroStatic Discharge

HF

High Frequency

LDMOS

MTF

Laterally Diffused Metal-Oxide Semiconductor

Median Time to Failure

SMD

Surface Mounted Device

RoHS

VSWR

Restriction of Hazardous Substances

Voltage Standing Wave Ratio

11. Revision history

Table 13. Revision history

Document ID

Release date Data sheet status

Change notice Supersedes

- BLP05H6700XR_H6700XRG v.1

BLP05H6700XR_H6700XRG 20180913

v.2

Product data sheet

Modifications

• Table 2 on page 2: package outline versions changed to SOT1138-3 and SOT1204-3

• Table 3 on page 2: package outline versions changed to SOT1138-3 and SOT1204-3

• Figure 4 on page 6: figure updated

• Section 8 on page 9: package outline versions changed from SOT1138-2 and

SOT1204-2 to SOT1138-3 and SOT1204-3

BLP05H6700XR_H6700XRG 20170217

v.1

Product data sheet

-

BLP05H6700XR_H6700XRG

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Product data sheet

Rev. 2 — 13 September 2018

13 of 16

BLP05H6700XR; BLP05H6700XRG

Power LDMOS transistor

12. Legal information

12.1 Data sheet status

Document status^[1][2]

Product status^[3]

Development

Definition

Objective [short] data sheet

This document contains data from the objective specification for product development.

This document contains data from the preliminary specification.

This document contains the product specification.

Preliminary [short] data sheet Qualification

Product [short] data sheet Production

[1]

[2]

[3]

Please consult the most recently issued document before initiating or completing a design.

The term ‘short data sheet’ is explained in section “Definitions”.

The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.ampleon.com.

Ampleon product can reasonably be expected to result in personal injury,

12.2 Definitions

death or severe property or environmental damage. Ampleon and its

suppliers accept no liability for inclusion and/or use of Ampleon products in

such equipment or applications and therefore such inclusion and/or use is at

the customer’s own risk.

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. Ampleon does not give any representations or

warranties as to the accuracy or completeness of information included herein

and shall have no liability for the consequences of use of such information.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. Ampleon makes no representation

or warranty that such applications will be suitable for the specified use without

further testing or modification.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local Ampleon sales office. In

case of any inconsistency or conflict with the short data sheet, the full data

sheet shall prevail.

Customers are responsible for the design and operation of their applications

and products using Ampleon products, and Ampleon accepts no liability for

any assistance with applications or customer product design. It is customer’s

sole responsibility to determine whether the Ampleon product is suitable and

fit for the customer’s applications and products planned, as well as for the

planned application and use of customer’s third party customer(s). Customers

should provide appropriate design and operating safeguards to minimize the

risks associated with their applications and products.

Product specification — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

Ampleon and its customer, unless Ampleon and customer have explicitly

agreed otherwise in writing. In no event however, shall an agreement be valid

in which the Ampleon product is deemed to offer functions and qualities

beyond those described in the Product data sheet.

Ampleon does not accept any liability related to any default, damage, costs or

problem which is based on any weakness or default in the customer’s

applications or products, or the application or use by customer’s third party

customer(s). Customer is responsible for doing all necessary testing for the

customer’s applications and products using Ampleon products in order to

avoid a default of the applications and the products or of the application or

use by customer’s third party customer(s). Ampleon does not accept any

liability in this respect.

12.3 Disclaimers

Limited warranty and liability — Information in this document is believed to

be accurate and reliable. However, Ampleon does not give any

representations or warranties, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information. Ampleon takes no responsibility for

the content in this document if provided by an information source outside of

Ampleon.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

In no event shall Ampleon be liable for any indirect, incidental, punitive,

special or consequential damages (including - without limitation - lost profits,

lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Terms and conditions of commercial sale — Ampleon products are sold

subject to the general terms and conditions of commercial sale, as published

at http://www.ampleon.com/terms, unless otherwise agreed in a valid written

individual agreement. In case an individual agreement is concluded only the

terms and conditions of the respective agreement shall apply. Ampleon

hereby expressly objects to applying the customer’s general terms and

conditions with regard to the purchase of Ampleon products by customer.

Notwithstanding any damages that customer might incur for any reason

whatsoever, Ampleon’s aggregate and cumulative liability towards customer

for the products described herein shall be limited in accordance with the

Terms and conditions of commercial sale of Ampleon.

No offer to sell or license — Nothing in this document may be interpreted or

construed as an offer to sell products that is open for acceptance or the grant,

conveyance or implication of any license under any copyrights, patents or

other industrial or intellectual property rights.

Right to make changes — Ampleon reserves the right to make changes to

information published in this document, including without limitation

specifications and product descriptions, at any time and without notice. This

document supersedes and replaces all information supplied prior to the

publication hereof.

Export control — This document as well as the item(s) described herein

may be subject to export control regulations. Export might require a prior

authorization from competent authorities.

Suitability for use — Ampleon products are not designed, authorized or

warranted to be suitable for use in life support, life-critical or safety-critical

systems or equipment, nor in applications where failure or malfunction of an

BLP05H6700XR_H6700XRG

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 2 — 13 September 2018

14 of 16

BLP05H6700XR; BLP05H6700XRG

Power LDMOS transistor

Non-automotive qualified products — Unless this data sheet expressly

Translations — A non-English (translated) version of a document is for

reference only. The English version shall prevail in case of any discrepancy

between the translated and English versions.

states that this specific Ampleon product is automotive qualified, the product

is not suitable for automotive use. It is neither qualified nor tested in

accordance with automotive testing or application requirements. Ampleon

accepts no liability for inclusion and/or use of non-automotive qualified

products in automotive equipment or applications.

12.4 Trademarks

In the event that customer uses the product for design-in and use in

automotive applications to automotive specifications and standards, customer

(a) shall use the product without Ampleon’ warranty of the product for such

automotive applications, use and specifications, and (b) whenever customer

uses the product for automotive applications beyond Ampleon’ specifications

such use shall be solely at customer’s own risk, and (c) customer fully

indemnifies Ampleon for any liability, damages or failed product claims

resulting from customer design and use of the product for automotive

applications beyond Ampleon’ standard warranty and Ampleon’ product

specifications.

Notice: All referenced brands, product names, service names and trademarks

are the property of their respective owners.

Any reference or use of any ‘NXP’ trademark in this document or in or on the

surface of Ampleon products does not result in any claim, liability or

entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of

the NXP group of companies and any reference to or use of the ‘NXP’

trademarks will be replaced by reference to or use of Ampleon’s own

trademarks.

13. Contact information

For more information, please visit: http://www.ampleon.com

For sales office addresses, please visit: http://www.ampleon.com/sales

BLP05H6700XR_H6700XRG

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 2 — 13 September 2018

15 of 16

BLP05H6700XR; BLP05H6700XRG

Power LDMOS transistor

14. Contents

1

Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

General description. . . . . . . . . . . . . . . . . . . . . . 1

Features and benefits. . . . . . . . . . . . . . . . . . . . 1

Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1

1.2

1.3

2

3

4

5

6

Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

Ordering information. . . . . . . . . . . . . . . . . . . . . 2

Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

Thermal characteristics. . . . . . . . . . . . . . . . . . . 3

Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4

7

Test information. . . . . . . . . . . . . . . . . . . . . . . . . 5

Ruggedness in class-AB operation. . . . . . . . . . 5

Impedance information . . . . . . . . . . . . . . . . . . . 5

Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 7

7.1

7.2

7.3

7.4

8

Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9

Handling information. . . . . . . . . . . . . . . . . . . . 13

Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 13

Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13

9

10

11

12

Legal information. . . . . . . . . . . . . . . . . . . . . . . 14

Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14

Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15

12.1

12.2

12.3

12.4

13

14

Contact information. . . . . . . . . . . . . . . . . . . . . 15

Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

For more information, please visit: http://www.ampleon.com

For sales office addresses, please visit: http://www.ampleon.com/sales

Date of release: 13 September 2018

Document identifier: BLP05H6700XR_H6700XRG


型号：	BLP05H6700XRY
厂家：	ETC
描述：	RF MOSFET LDMOS 50V SOT1138-2
文件：	总16页 (文件大小：1698K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BLP05H6700XRY [ETC]

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