BC857A-Z3E [ETC]
SOT23 PNP SILICON PLANAR GENERAL PURPOSE TRANSISTORS; SOT23封装PNP硅平面通用晶体管型号: | BC857A-Z3E |
厂家: | ETC |
描述: | SOT23 PNP SILICON PLANAR GENERAL PURPOSE TRANSISTORS |
文件: | 总3页 (文件大小:39K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SOT23 PNP SILICON PLANAR
BC856
BC858
BC860
BC857
BC859
GENERAL PURPOSE TRANSISTORS
ISSUE 6 - APRIL 1997
PARTMARKING DETAILS
BC856A3A BC858C3L
BC856BZ3B BC859AZ4A BC857
BC857AZ3E BC859B4B BC858
COMPLEMENTARY TYPES
E
BC856
BC846
BC847
BC848
BC849
BC850
C
B
BC857B3F
BC857C3G
BC858A3J
BC858B3K
BC859CZ4C BC859
BC860AZ4E BC860
BC860B4F
SOT23
BC860C4GZ
ABSOLUTE MAXIMUM RATINGS.
UNIT
V
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
SYMBOL
BC856
-80
BC857
-50
BC858
-30
BC859
-30
BC860
-50
VCBO
VCES
VCEO
VEBO
IC
-80
-50
-30
-30
-50
V
-65
-45
-30
-30
-45
V
-5
V
-100
-200
-200
-200
330
mA
mA
mA
mA
mW
°C
IEM
Base Current
IBM
Base Current
IEM
Power Dissipation at Tamb=25°C
Ptot
Operating and Storage
Temperature Range
Tj:Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
UNIT CONDITIONS.
BC856 BC857 BC858 BC859 BC860
PARAMETER
SYMBOL
Collector Cut-Off Current ICBO
Max
Max
nA
VCB = -30V
CB = -30V
Tamb=150°C
-15
-4
V
µA
Collector-Emitter
Saturation Voltage
VCE(sat) Typ
-75 -75
-75
Max. -300 -300 -300 -250 -250
-75 -75
mV IC=-10mA,
IB=-0.5mA
Typ
Max.
-250
-650
mV IC=-100mA,
IB=-5mA
Typ
Max.
-300
-600
mV IC=-10mA*
Base-Emitter
Saturation Voltage
VBE(sat)
-700
mV IC=-10mA,
IB=-0.5mA
Typ
-850
mV IC=-100mA,
IB=-5mA
Typ
Base-Emitter Voltage
VBE
-600 -600 -600 -580 -580 mV IC=-2mA
Min
Typ
Max
-650 -650 -650 -650 -650
-750 -750 -750 -750 -750
VCE=-5V
-820
mV IC=-10mA
VCE=-5V
Max
* Collector-Emitter Saturation Voltage at IC = 10mA for the characteristics going through the
operating point IC = 11mA, VCE = 1V at constant base current.
BC856
BC858
BC860
BC857
BC859
ELECTRICAL CHARACTERISTICS (Continued)
PARAMETER
Noise Figure
SYMBOL
UNIT CONDITIONS.
BC856 BC857 BC858 BC859 BC860
N
Typ
Max
2
10
2
10
2
10
1
4
1
4
dB
dB
VCB = -5V,
IC=-200µA, RG=2kΩ,
f=1kHz, ∆f=200Hz
Typ
Max
1.2
4
1
3
dB
dB
VCB = -5V,
IC=-200µA, RG=2kΩ,
f=30Hz to 15kHz at
-3dB points
Equivalent Noise
Voltage
en
Max
110 110 nV
VCB = -5V,
IC=-200µA, RG=2kΩ,
f=10Hz to 50Hz at
-3dB points
Dynamic
Characteristics
Group VI hie
Min
Typ
Max
0.4
1.2
2.2
0.4
1.2
2.2
0.4
1.2
2.2
kΩ
kΩ
kΩ
Group A
Min
Typ
Max
1.6
2.7
4.5
kΩ
kΩ
kΩ
Min
Typ
Max
3.2
4.5
8.5
kΩ
kΩ
kΩ
Group B
Group C
Min
Typ
Max
6
8.7
15
6
8.7
15
6
8.7
15
kΩ
kΩ
kΩ
Group VI
Group A
Group B
Group C
hre
Typ
Typ
Typ
Typ
2.5
1.5
2
2.5
1.5
2
2.5
1.5
2
1.5
2
x10-4
1.5 x10-4
2
3
x10-4
x10-4
3
3
Group VI
hfe
Min
Typ
75
75
75
110 110 110
VCE=-5V
Ic=-2mA
f=1kHz
Max 150 150 150
Group A
Min
Typ
Max
125
220
260
Min
Typ
Max
240
330
500
Group B
Group C
Min
Typ
Max
450 450 450 450
600 600 600 600
900 900 900 900
Group VI
Group A
Group B
Group C
hoe
Typ
Max
20
40
20
40
20
40
µs
µs
Typ
Max
18
30
µs
µs
Typ
Max
30
60
µs
µs
Typ
Max
60
110 110 110
60
60
µs
µs
BC856
BC858
BC860
BC857
BC859
ELECTRICAL CHARACTERISTICS (Continued)
PARAMETER
SYMBOL
Group VI hFE Min
Typ
Max 150 150 150
UNIT CONDITIONS.
BC856 BC857 BC858 BC859 BC860
Static
Forward
Current Ratio
75
75
75
IC=-2mA,
VCE=-5V
110 110 110
Group A
Group B
Group C
hFE
hFE
hFE
Typ
90
90
90
IC=-0.01mA,VCE=-5V
Min
Typ
Max
125
180
250
IC=-2mA,
VCE=-5V
Typ
Typ
120 120 120
150
IC=-100mA,VCE=-5V
IC=-0.01mA,VCE=-5V
Min
Typ
Max
220
290
475
IC=-2mA,
VCE=-5V
Typ
200 200 200
IC=-100mA,VCE=-5V
Typ.
270 270 270 270
IC=-0.01mA,
VCE=-5V
Min
Typ
Max
420 420 420 420
500 500 500 500
800 800 800 800
IC=-2mA,
VCE=-5V
Typ
Typ
400
IC=-100mA,VCE=-5V
Transition Frequency
fT
150 150 150 300 300 MHz IC=-10mA,VCE=-5V
f=100MHz
VCB=-10V,
f=1MHz
Collector-Base
Capacitance
Cobo
Typ
4.5
pF
Spice parameter data is available upon request for these devices
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