BC846B/E8 [ETC]
TRANSISTOR | BJT | NPN | 65V V(BR)CEO | 100MA I(C) | SOT-23 ; 晶体管| BJT | NPN | 65V V（ BR ） CEO | 100MA I（C ） | SOT- 23\n
| 型号： | BC846B/E8 |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | BJT | NPN | 65V V(BR)CEO | 100MA I(C) | SOT-23
|
| 文件： | 总5页 (文件大小：219K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC846 thru BC849
Vishay Semiconductors
formerly General Semiconductor
Small Signal Transistors (NPN)
Mounting Pad Layout
0.031 (0.8)
TO-236AB (SOT-23)
.122 (3.1)
.110 (2.8)
0.035 (0.9)
.016 (0.4)
Top View
0.079 (2.0)
3
Pin Configuration
1 = Base
2 = Emitter
3 = Collector
0.037 (0.95)
0.037 (0.95)
Type
Marking
Type
Marking
1
2
BC846A
B
1A
1B
BC848A
1J
1K
1L
Dimensions in inches
and (millimeters)
B
C
.037(0.95)
.037(0.95)
BC847A
1E
1F
1G
B
C
BC849B
C
2B
2C
Features
• NPN Silicon Epitaxial Planar Transistors for switching
.102 (2.6)
.094 (2.4)
.016 (0.4) .016 (0.4)
and AF amplifier applications.
• Especially suited for automatic insertion in thick and
thin-film circuits.
Mechanical Data
Case: SOT-23 Plastic Package
• These transistors are subdivided into three groups (A, B,
and C) according to their current gain. The type BC846 is
available in groups A and B, however, the types BC847 and
BC848 can be supplied in all three groups. The BC849 is a
low noise type available in groups B and C. As complementary
types, the PNP transistors BC856...BC859 are recommended.
Weight: approx. 0.008g
Packaging Codes/Options:
E8/10K per 13” reel (8mm tape), 30K/box
E9/3K per 7” reel (8mm tape), 30K/box
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
BC846
80
50
30
Collector-Base Voltage
BC847
VCBO
V
BC848, BC849
BC846
80
50
30
Collector-Emitter Voltage
BC847
VCES
V
BC848, BC849
BC846
65
45
30
Collector-Emitter Voltage
Emitter-Base Voltage
BC847
VCEO
V
V
BC848, BC849
BC846, BC847
BC848, BC849
6
5
VEBO
Collector Current
IC
ICM
IBM
–IEM
Ptot
RθJA
RθSB
Tj
100
200
mA
mA
Peak Collector Current
Peak Base Current
200
mA
Peak Emitter Current
Power Dissipation at TSB = 50°C
200
mA
310(1)
450(1)
320(1)
150
mW
°C/W
°C/W
°C
Thermal Resistance Junction to Ambiant Air
Thermal Resistance Junction to Substrate Backside
Junction Temperature
Storage Temperature Range
TS
–65 to +150
°C
Note: (1) Device on fiberglass substrate, see layout on third page.
Document Number 88164
09-May-02
www.vishay.com
1
BC846 thru BC849
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics(TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Small Signal Current Gain
Current Gain Group A
V
CE = 5V, IC = 2mA
—
—
—
220
330
600
—
—
—
—
—
—
B
C
hfe
f = 1kHz
Input Impedance
Current Gain Group A
VCE = 5V, IC = 2mA
f = 1kHz
1.6
3.2
6.0
2.7
4.5
8.7
4.5
8.5
15.0
B
C
hie
kΩ
µS
Output Admittance
Current Gain Group A
VCE = 5V, IC = 2mA
f = 1kHz
—
—
—
18
30
60
30
60
110
B
C
hoe
Reverse Voltage Transfer Ratio
Current Gain Group A
VCE = 5 V, IC = 2mA
f = 1kHz
—
—
—
1.5 10-4
2 10-4
3 10-4
—
—
—
—
—
—
B
C
hre
hFE
hFE
DC Current Gain
Current Gain Group A
VCE = 5V, IC = 10µA
—
—
—
90
150
270
—
—
—
—
—
—
B
C
Current Gain Group A
VCE = 5V, IC = 2mA
110
200
420
180
290
520
220
450
800
—
—
—
B
C
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5mA
—
—
90
200
250
600
Collector Saturation Voltage
Base Saturation Voltage
VCEsat
VBEsat
mV
mV
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5mA
—
—
700
900
—
—
VCE = 5V, IC = 2mA
580
660
—
700
—
Base-Emitter VoltageVBEon
Collector-Base Cutoff Current
Gain-Bandwidth Product
mV
VCE = 5V, IC = 10mA
770
VCB = 30V
—
—
—
—
15
5
nA
µA
ICBO
VCB = 30V, TJ = 150˚C
VCE = 5V, IC = 10mA
f = 100MHz
fT
—
300
—
MHz
Collector-Base Capacitance
Emitter-Base Capacitance
CCBO
CEBO
VCB = 10V, f = 1MHz
VEB = 0.5V, f = 1MHz
VCE = 5V, IC = 200µA
—
—
3.5
9
6
pF
pF
—
BC846, BC847, BC848
—
—
2
1.2
10
4
dB
dB
BC849
R =2kΩ,f=1kHz, ∆f= 200Hz
G
Noise Figure
F
VCE = 5V, IC = 200µA
BC849
—
1.4
4
dB
R =2kΩ,f=30...15000Hz
G
Note: (1) Device on fiberglass substrate, see layout on next page
www.vishay.com
2
Document Number 88164
09-May-02
BC846 thru BC849
0.30 (7.5)
0.12 (3)
Vishay Semiconductors
formerly General Semiconductor
Layout for R
test
ΘJA
.04 (1)
.08 (2)
.04 (1)
Thickness:
Fiberglass 0.059 in. (1.5 mm)
Copper leads 0.012 in. (0.3 mm)
Dimensions in inches (millimeters)
.08 (2)
0.59 (15)
0.03 (0.8)
0.2 (5)
0.47 (12)
Admissible power dissipation
versus temperature of substrate backside
Device on fiblerglass substrate, see layout
Pulse thermal resistance
versus pulse duration (normalized)
Device on fiblerglass substrate, see layout
0.06 (1.5)
0.20 (5.1)
Collector-Base cutoff current versus
ambient temperature
DC current gain versus collector current
Document Number 88164
09-May-02
www.vishay.com
3
BC846 thru BC849
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
www.vishay.com
4
Document Number 88164
09-May-02
BC846 thru BC849
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Document Number 88164
09-May-02
www.vishay.com
5
相关型号：
BC846BD87Z
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon
FAIRCHILD
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