BC807-16/E9 [ETC]
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 800MA I(C) | SOT-23 ; 晶体管| BJT | PNP | 45V V（ BR ） CEO | 800MA I（C ） | SOT- 23\n
| 型号： | BC807-16/E9 |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 800MA I(C) | SOT-23
|
| 文件： | 总5页 (文件大小：205K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC807, BC808
Vishay Semiconductors
formerly General Semiconductor
Small Signal Transistors (PNP)
TO-236AB (SOT-23)
.122 (3.1)
.110 (2.8)
.016 (0.4)
Mounting Pad Layout
Top View
3
0.031 (0.8)
0.035 (0.9)
Pin Configuration
1
2
1 = Base 2 = Emitter
3 = Collector
0.079 (2.0)
.037(0.95)
.037(0.95)
0.037 (0.95)
0.037 (0.95)
.102 (2.6)
.094 (2.4)
.016 (0.4) .016 (0.4)
Dimensions in inches and (millimeters)
Mechanical Data
Features
Case: SOT-23 Plastic Package
• PNP Silicon Epitaxial Planar Transistors for
switching, AF driver and amplifier applications.
Weight: approx. 0.008 grams
• Especially suited for automatic insertion in thick
and thin-film circuits.
Marking
Codes:
BC807-16 = 5A BC808-16 = 5E
-25 = 5B
-40 = 5C
-25 = 5F
-40 = 5G
• These transistors are subdivided into three groups
(-16, -25, and -40) according to their current gain.
Packaging Codes/Options:
E8/10K per 13” reel (8mm tape), 30K/box
E9/3K per 7” reel (8mm tape), 30K/box
• As complementary types, the NPN transistors
BC817 and BC818 are recomended.
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
BC807
BC808
50
30
Collector-Emitter Voltage (Base shorted)
–VCES
–VCEO
V
BC807
BC808
45
25
Collector-Emitter Voltage (Base open)
V
Emitter-Base Voltage
Collector Current
–VEBO
–IC
5
800
V
mA
mA
mA
mA
mW
°C/W
°C/W
°C
Peak Collector Current
Peak Base Current
–ICM
–IBM
IEM
1000
200
Peak Emitter Current
Power Dissipation at TSB = 50 ˚C
1000
Ptot
310(1)
450(1)
320(1)
150
Thermal Resistance Junction to Ambient Air
Thermal Resistance Junction to Substrate Backside
Junction Temperature
RθJA
RθSB
Tj
Storage Temperature Range
TS
–65 to +150
°C
Note: (1) Device on fiberglass substrate, see layout on next page.
Document Number 88162
09-May-02
www.vishay.com
1
BC807, BC808
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics(TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
DC Current Gain
Current Gain Group –16
–VCE = 1V, –IC = 100mA
100
160
250
40
—
—
—
—
250
400
600
—
—
—
—
—
–25
–40
hFE
–VCE = 1V, –IC = 500mA
Collector Saturation Voltage
Base Saturation Voltage
Base-Emitter Voltage
–VCEsat –IC = 500mA, –IB = 50mA
VBEsat –IC = 500mA, –IB = 50mA
—
—
—
—
—
—
0.7
1.3
1.2
V
V
V
–VBEon
–ICBO
–IEBO
fT
–VCE = 1V, –IC = 500mA
–VCB = 20V
–VCB = 20V, TJ = 150°C
—
—
—
—
100
5
nA
µA
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Gain-Bandwidth Product
–VEB = 4 V
—
—
—
—
100
12
100
nA
MHz
pF
–VCE = 5V, –IC = 10mA
—
f = 50 MHz
Collector-Base Capacitance
CCBO
–VCB = 10V, f = 1 MHz
—
Note: (1)Device on fiberglass substrate, see layout.
0.30 (7.5)
0.12 (3)
Layout for R
test
θJA
Thickness: Fiberglass 0.059 in. (1.5 mm)
Copper leads 0.012 in. (0.3 mm)
.04 (1)
.08 (2)
.04 (1)
.08 (2)
0.59 (15)
0.03 (0.8)
0.47 (12)
Dimensions in inches (millimeters)
0.2 (5)
0.06 (1.5)
0.20 (5.1)
www.vishay.com
2
Document Number 88162
09-May-02
BC807, BC808
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Document Number 88162
09-May-02
www.vishay.com
3
BC807, BC808
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
www.vishay.com
4
Document Number 88162
09-May-02
BC807, BC808
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Document Number 88162
09-May-02
www.vishay.com
5
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