BC368-25 [ETC]
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 1A I(C) | TO-92 ; 晶体管| BJT | NPN | 20V V（ BR ） CEO | 1A I（C ） | TO- 92\n
| 型号： | BC368-25 |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 1A I(C) | TO-92
|
| 文件： | 总4页 (文件大小：51K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ON Semiconductort
BC368
NPN,
Amplifier Transistors
BC369
PNP
COLLECTOR
2
COLLECTOR
2
3
3
Voltage and current are negative
for PNP transistors
BASE
BASE
NPN
PNP
1
1
EMITTER
EMITTER
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Emitter Voltage
Emitter–Base Voltage
Symbol
Value
Unit
Vdc
Vdc
Vdc
Adc
V
CEO
20
25
1
2
3
V
CES
EBO
V
5.0
1.0
CASE 29–04, STYLE 14
TO–92 (TO–226AA)
Collector Current — Continuous
I
C
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
A
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
1.5
12
Watt
mW/°C
C
Operating and Storage Junction
Temperature Range
T , T
–55 to +150
°C
J
stg
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
200
Unit
°C/W
°C/W
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
R
qJA
qJC
R
83.3
Semiconductor Components Industries, LLC, 2001
1
Publication Order Number:
November, 2001 – Rev. 3
BC368/D
BC368 NPN, BC369 PNP
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I = 10 mA, I = 0)
V
20
25
—
—
—
—
—
—
Vdc
Vdc
Vdc
(BR)CEO
C
B
Collector–Base Breakdown Voltage
(I = 100 µA, I = 0 )
V
(BR)CBO
C
E
Emitter–Base Breakdown Voltage
(I = 100 µA, I = 0)
V
5.0
(BR)EBO
E
C
Collector Cutoff Current
I
CBO
(V
CB
(V
CB
= 25 V, I = 0)
—
—
—
—
10
1.0
µAdc
mAdc
E
= 25 V, I = 0, T = 150°C)
E
J
Emitter Cutoff Current
(V = 5.0 V, I = 0)
I
—
—
10
µAdc
EBO
EB
C
ON CHARACTERISTICS
DC Current Gain
h
FE
—
(V
CE
(V
CE
= 10 V, I = 5.0 mA)
= 1.0 V, I = 0.5 A)
50
85
170
60
—
—
—
—
—
375
375
—
C
BC368, 369
BC368–25
C
(V
CE
= 1.0 V, I = 1.0 A)
C
Bandwidth Product (I = 10 mA, V
CE
= 5.0 V, f = 20 MHz)
f
65
—
—
—
—
—
—
MHz
V
C
T
Collector–Emitter Saturation Voltage (I = 1.0 A, I = 100 mA)
V
CE(sat)
0.5
1.0
C
B
Base–Emitter On Voltage (I = 1.0 A, V
CE
= 1.0 V)
V
V
C
BE(on)
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2
BC368 NPN, BC369 PNP
200
100
1.0
T
= 25°C
J
0.8
0.6
0.4
0.2
70
50
50 mA
100 mA
V
= 1.0 V
CE
= 25°C
T
J
1000 mA
500 mA
I
= 10 mA
C
250 mA
50 100
20
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
10
20
50
100
200
500
1000
I , BASE CURRENT (mA)
B
I , COLLECTOR CURRENT (mA)
C
Figure 2. Collector Saturation Region
Figure 1. DC Current Gain
-0.8
-1.2
-1.6
-2.0
-2.4
-2.8
1.0
0.8
V
@ I /I = 10
C B
BE(sat)
T
= 25°C
J
V
@ V = 1.0 V
CE
BE(on)
0.6
0.4
0.2
0
θ
for V
BE
VB
V
@ I /I = 10
C B
CE(sat)
1.0 2.0 5.0 10 20
50 100 200 500 1000
1.0 2.0 5.0 10 20
50 100 200 500 1000
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 4. Temperature Coefficient
Figure 3. “On” Voltages
300
200
160
120
T
= 25°C
J
100
70
80
40
C
C
ibo
V
= 10 V
CE
50
T
= 25°C
f = 20 MHz
J
obo
0
C
30
10
20
50
100
200
500
1000
5.0
1.0
10
15
20
25
obo
C
2.0
3.0
4.0
5.0
ibo
I , COLLECTOR CURRENT (mA)
C
V , REVERSE VOLTAGE (VOLTS)
R
Figure 5. Current–Gain — Bandwidth Product
Figure 6. Capacitance
http://onsemi.com
3
BC368 NPN, BC369 PNP
PACKAGE DIMENSIONS
CASE 029–04
(TO–226AA)
ISSUE AD
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSIONS D AND J APPLY BETWEEN L AND K
MIMIMUM. LEAD DIMENSION IS
UNCONTROLLED IN P AND BEYOND DIMENSION
K MINIMUM.
B
K
R
SEATING
PLANE
P
L
F
INCHES
MILLIMETERS
DIM MIN MAX
MIN
4.44
7.37
3.18
0.457
0.407
1.15
2.42
0.46
12.70
6.35
2.04
---
MAX
5.21
7.87
4.19
0.533
0.482
1.39
2.66
0.61
---
A
B
C
D
F
0.175
0.290
0.125
0.018
0.016
0.045
0.095
0.018
0.500
0.250
0.080
---
0.205
0.310
0.165
0.021
0.019
0.055
0.105
0.024
---
X X
D
G
G
H
J
H
R
J
K
L
---
---
SECTION X–X
N
P
R
0.105
0.100
---
2.66
2.54
---
C
1
2
3
N
0.135
3.43
N
TYLE 14:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
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BC368/D
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