BC327-25/E6 [ETC]
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 800MA I(C) | TO-226AA ; 晶体管| BJT | PNP | 45V V（ BR ） CEO | 800MA I（C ） | TO- 226AA\n
| 型号： | BC327-25/E6 |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 800MA I(C) | TO-226AA
|
| 文件： | 总5页 (文件大小：222K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC327 thru BC328
Vishay Semiconductors
formerly General Semiconductor
Small Signal Transistors (PNP)
TO-226AA (TO-92)
Features
• PNP Silicon Epitaxial Planar Transistors for switching
and amplifier applications. Especially suitable for
AF-driver stages and low-power output stages.
0.142 (3.6)
0.181 (4.6)
• These types are also available subdivided into
three groups, -16, -25, and -40, according to their
DC current gain. As complementary types, the NPN
transistors BC327 and BC338 are recommended.
• On special request, these transistors are also
manufactured in the pin configuration TO-18.
Mechanical Data
Case: TO-92 Plastic Package
Weight: approx. 0.18g
max.
0.022 (0.55)
Packaging Codes/Options:
E6/Bulk – 5K per container, 20K/box
E7/4K per Ammo mag., 20K/box
0.098 (2.5)
Dimensions in inches
and (millimeters)
Bottom
View
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
Value
Unit
BC327
BC328
50
30
Collector-Emitter Voltage
–VCES
V
BC327
BC328
45
25
Collector-Emitter Voltage
–VCEO
V
Emitter-Base Voltage
–VEBO
–IC
5
800
V
mA
A
Collector Current
Peak Collector Current
–ICM
–IB
1
Base Current
100
mA
mW
°C/W
°C
Power Dissipation at Tamb = 25°C
Thermal Resistance Junction to Ambient Air
Junction Temperature
Ptot
RΘJA
Tj
625(1)
200(1)
150
Storage Temperature Range
TS
–65 to +150
°C
Note: (1) Valid provided that leads are kept at ambient temperature at a distance of 2mm from case.
Document Number 88158
08-May-02
www.vishay.com
1
BC327 thru BC328
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics(TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Current Gain Group -16
100
160
250
160
250
400
250
400
630
-25
-40
-VCE = 1 V, -IC = 100 mA
DC Current Gain
hFE
—
Current Gain Group -16
60
100
170
130
200
320
—
—
—
-25
-40
-VCE = 1 V, -IC = 300 mA
BC327
BC328
BC327
BC328
-VCE = 45 V
-VCE = 25 V
-VCE = 45 V, Tamb = 125°C
-VCE = 25 V, Tamb = 125°C
—
—
—
—
2
2
—
—
100
100
10
nA
nA
µA
µA
Collector-Emitter Cutoff Current
-ICES
10
Collector Saturation Voltage
Base-Emitter Voltage
-VCEsat -IC = 500 mA, -IB = 50 mA
—
—
—
—
0.7
1.2
V
V
-VBE
-VCE = 1 V, -IC = 300 mA
BC327
BC328
45
25
—
—
—
—
Collector-Emitter Breakdown Voltage
-V(BR)CEO
-IC = 10 mA
V
BC327
BC328
50
30
—
—
—
—
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Gain-Bandwidth Product
-V(BR)CES
-V(BR)EBO
fT
-IC = 0.1 mA
-IE = 0.1 mA
V
V
5
—
100
12
—
—
—
-VCE = 5 V, -IC = 10 mA
f = 50 MHz
—
—
MHz
pF
Collector-Base Capacitance
CCBO
-VCB = 10 V, f = 1 MHz
www.vishay.com
2
Document Number 88158
08-May-02
BC327 thru BC328
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Document Number 88158
08-May-02
www.vishay.com
3
BC327 thru BC328
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
www.vishay.com
4
Document Number 88158
08-May-02
BC327 thru BC328
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Document Number 88158
08-May-02
www.vishay.com
5
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