BC237/D [ETC]

Amplifier Transistor NPN ; 放大器晶体管NPN\n
BC237/D
型号: BC237/D
厂家: ETC    ETC
描述:

Amplifier Transistor NPN
放大器晶体管NPN\n

晶体 放大器 晶体管
文件: 总4页 (文件大小:55K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BC237,A,B,C  
BC238B,C  
BC239,C  
Amplifier Transistors  
NPN Silicon  
MAXIMUM RATINGS  
Rating  
Symbol BC237 BC238 BC239  
Unit  
Vdc  
Collector–Emitter Voltage  
Collector–Emitter Voltage  
Emitter–Base Voltage  
V
45  
50  
25  
30  
25  
30  
CEO  
V
V
Vdc  
CES  
EBO  
6.0  
5.0  
100  
5.0  
Vdc  
Collector Current — Continuous  
I
C
mAdc  
1
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
350  
2.8  
mW  
mW/°C  
A
2
3
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
1.0  
8.0  
Watts  
mW/°C  
C
CASE 29–04, STYLE 17  
TO–92 (TO–226AA)  
Operating and Storage Junction  
Temperature Range  
T , T  
–55 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
357  
125  
Unit  
°C/W  
°C/W  
COLLECTOR  
1
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
q
JA  
JC  
R
q
2
BASE  
3
EMITTER  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Breakdown Voltage  
(I = 2.0 mA, I = 0)  
BC237  
BC238  
BC239  
V
45  
25  
25  
V
(BR)CEO  
C
B
Emitter–Base Breakdown Voltage  
(I = 100 mA, I = 0)  
BC237  
BC238  
BC239  
V
6.0  
5.0  
5.0  
V
(BR)EBO  
E
C
Collector Cutoff Current  
(V = 30 V, V = 0)  
I
CES  
BC238  
BC239  
0.2  
0.2  
15  
15  
nA  
CE  
BE  
(V = 50 V, V = 0)  
BC237  
0.2  
15  
CE  
BE  
(V = 30 V, V = 0) T = 125°C  
BC238  
BC239  
0.2  
0.2  
4.0  
4.0  
µA  
CE  
BE  
A
(V = 50 V, V = 0) T = 125°C  
BC237  
0.2  
4.0  
CE  
BE  
A
Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
February, 2001 – Rev. 2  
BC237/D  
BC237,A,B,C BC238B,C BC239,C  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
ON CHARACTERISTICS  
DC Current Gain  
h
FE  
(I = 10 µA, V = 5.0 V)  
BC237A  
BC237B/238B  
BC237C/238C/239C  
90  
150  
270  
C
CE  
(I = 2.0 mA, V = 5.0 V)  
BC237  
BC239  
BC237A  
BC237B/238B  
BC237C/238C/239C  
120  
120  
120  
200  
380  
170  
290  
500  
800  
800  
220  
460  
800  
C
CE  
(I = 100 mA, V = 5.0 V)  
BC237A  
BC237B/238B  
BC237C/238C/239C  
120  
180  
300  
C
CE  
Collector–Emitter On Voltage  
V
V
V
CE(sat)  
(I = 10 mA, I = 0.5 mA)  
BC237/BC238/BC2  
0.07  
0.2  
0.2  
0.6  
0.8  
C
B
39  
(I = 100 mA, I = 5.0 mA)  
BC237/BC239  
BC238  
C
B
Base–Emitter Saturation Voltage  
(I = 10 mA, I = 0.5 mA)  
V
V
BE(sat)  
0.6  
0.83  
1.05  
C
B
(I = 100 mA, I = 5.0 mA)  
C
B
Base–Emitter On Voltage  
(I = 100 µA, V = 5.0 V)  
V
BE(on)  
0.55  
0.5  
0.62  
0.83  
0.7  
C
CE  
(I = 2.0 mA, V = 5.0 V)  
C
CE  
(I = 100 mA, V = 5.0 V)  
C
CE  
DYNAMIC CHARACTERISTICS  
Current–Gain — Bandwidth Product  
f
T
MHz  
(I = 0.5 mA, V = 3.0 V, f = 100 MHz)  
BC237  
BC238  
BC239  
100  
120  
140  
C
CE  
(I = 10 mA, V = 5.0 V, f = 100 MHz)  
BC237  
BC238  
BC239  
150  
150  
150  
200  
240  
280  
C
CE  
Collector–Base Capacitance  
(V = 10 V, I = 0, f = 1.0 MHz)  
C
4.5  
pF  
pF  
dB  
obo  
CB  
C
Emitter–Base Capacitance  
C
8.0  
ibo  
(V = 0.5 V, I = 0, f = 1.0 MHz)  
EB  
C
Noise Figure  
NF  
(I = 0.2 mA, V = 5.0 V, R = 2.0 k,  
C
CE  
S
f = 1.0 kHz)  
BC239  
2.0  
4.0  
(I = 0.2 mA, V = 5.0 V, R = 2.0 k,  
C
CE  
S
f = 1.0 kHz, f = 200 Hz)  
BC237  
BC238  
BC239  
2.0  
2.0  
2.0  
10  
10  
4.0  
http://onsemi.com  
2
BC237,A,B,C BC238B,C BC239,C  
2.0  
1.5  
1.0  
V
= 10 V  
T = 25°C  
A
CE  
T = 25°C  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
A
V
@ I /I = 10  
C B  
BE(sat)  
1.0  
0.8  
V
BE(on)  
@ V = 10 V  
CE  
0.6  
0.4  
0.3  
0.3  
0.2  
0.1  
0
V
@ I /I = 10  
C B  
CE(sat)  
0.2  
0.2  
0.5 1.0  
2.0  
5.0  
10  
20  
50 100 200  
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10  
20 30 50 70 100  
I , COLLECTOR CURRENT (mAdc)  
C
I , COLLECTOR CURRENT (mAdc)  
C
Figure 1. Normalized DC Current Gain  
Figure 2. “Saturation” and “On” Voltages  
10  
7.0  
5.0  
400  
300  
200  
T = 25°C  
A
C
ib  
V
= 10 V  
CE  
T = 25°C  
100  
80  
3.0  
2.0  
A
C
ob  
60  
40  
30  
20  
1.0  
0.5 0.7 1.0  
2.0 3.0  
5.0 7.0 10  
20 30  
50  
0.4 0.6 0.8 1.0  
2.0  
4.0 6.0 8.0 10  
20  
40  
I , COLLECTOR CURRENT (mAdc)  
C
V , REVERSE VOLTAGE (VOLTS)  
R
Figure 3. Current–Gain — Bandwidth Product  
Figure 4. Capacitances  
170  
160  
150  
V
= 10 V  
CE  
f = 1.0 kHz  
140  
130  
120  
T = 25°C  
A
0.1  
0.2 0.3  
0.5  
1.0  
2.0 3.0  
5.0  
10  
I , COLLECTOR CURRENT (mAdc)  
C
Figure 5. Base Spreading Resistance  
http://onsemi.com  
3
BC237,A,B,C BC238B,C BC239,C  
PACKAGE DIMENSIONS  
CASE 029–04  
(TO–226AA)  
ISSUE AD  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: INCH.  
3. CONTOUR OF PACKAGE BEYOND DIMENSION R  
IS UNCONTROLLED.  
A
B
4. DIMENSION F APPLIES BETWEEN P AND L.  
DIMENSION D AND J APPLY BETWEEN L AND K  
MINIMUM. LEAD DIMENSION IS UNCONTROLLED  
IN P AND BEYOND DIMENSION K MINIMUM.  
R
P
L
F
SEATING  
PLANE  
INCHES  
DIM MIN MAX  
MILLIMETERS  
K
MIN  
4.45  
4.32  
3.18  
0.41  
0.41  
1.15  
2.42  
0.39  
12.70  
6.35  
2.04  
---  
MAX  
5.20  
5.33  
4.19  
0.55  
0.48  
1.39  
2.66  
0.50  
---  
A
B
C
D
F
0.175  
0.170  
0.125  
0.016  
0.016  
0.045  
0.095  
0.015  
0.500  
0.250  
0.080  
---  
0.205  
0.210  
0.165  
0.022  
0.019  
0.055  
0.105  
0.020  
---  
D
J
X X  
G
G
H
J
H
V
SECTION X–X  
K
L
C
---  
---  
N
P
R
V
0.105  
0.100  
---  
2.66  
2.54  
---  
1
N
0.115  
0.135  
2.93  
3.43  
N
---  
---  
STYLE 17:  
PIN 1. COLLECTOR  
2. BASE  
3. EMITTER  
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including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or  
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be  
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BC237/D  

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