BAS19201 [ETC]
;
ETC 
BAS19
BAS20
BAS21
SOT23 SILICON HIGH
SPEED SWITCHING DIODE
ISSUE 2 JANUARY 1995
PIN CONFIGURATION
2
1
3
PARTMARKING DETAILS
BAS19 A8
BAS20 A81
BAS21 A82
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VR
BAS19
100
BAS20
150
BAS21
200
UNIT
V
Continuous Reverse Voltage
Repetative Peak Reverse Voltage
Average Forward Rectified Current
Forward Current
VRRM
IF(AV)
IF
120
200
250
V
200
mA
mA
mA
mW
°C
200
Repetative Peak Forward Current
Power Dissipation at Tamb=25°C
IFRM
625
Ptot
330
Operating and Storage Temperature
Range
Tj:Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
V(BR)
Reverse
Breakdown
Voltage
BAS19
BAS20
BAS21
120
200
250
V
V
V
IR=100µA (1)
IR=100µA (1)
IR=100µA (2)
Reverse Current
IR
100
100
nA
µA
VR=VRmax
VR=VRmax, TJ=150°C
Static Forward Voltage VF
Differential Resistance rdiff
1.00
1.25
IF=100mA
IF=200mA
5
IF=10mA
Ω
Diode Capacitance
Cd
5
pF
ns
f=1MHz
Reverse Recovery Time trr
50
IF=30mA to IR=30mA
RL=10Ω measured at IR=3mA
(1) Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
(2) At zero life time, measured under pulse conditions to avoid excessive dissipation and voltage
limited to 275V
Spice parameter data is available upon request for this device
PAGE NO
BAS19
BAS20
BAS21
SWITCHING TIME TEST DATA
Recovery Time Equivalent Test Circuit
Pulse Generator
DUT
Sampling Oscilloscope
=50Ω
R
IN
R
S
=50Ω
tp(tot)
tp
V
90%
10%
trr
+IF
t
IR*
90%
Input Signal
Output Signal
Input Signal
Reverse Pulse Duration
Oscilloscope
tp
100ns
Total Pulse Duration
Duty Factor
tp(tot)
2µs
Rise Time
tr
C
0.35ns
<1pF
0.0025
0.6ns
δ
Circuit Capacitance*
Rise Time of Reverse
Pulse
tr
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