B3520K4-X.X [ETC]
N-CHANNEL DMOS FET SWITCH; N沟道DMOS FET开关
| 型号： | B3520K4-X.X |
| 厂家： | 
ETC |
| 描述： | N-CHANNEL DMOS FET SWITCH |
| 文件： | 总4页 (文件大小：213K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bay Linear
Inspire the Linear Power
N-CHANNEL DMOS FET SWITCH
B3520/B3540
High Gain Level Shifter
Series
Description
Features
The B3520 series consists of enhancement-mode
MOSFETs designed for high speed low-glitch switching
in audio, video, and high-frequency wireless
applications. The CT3520 is optimized as a high speed
driver. With a source feedback resistor it can be uses as
a high speed LED Driver.
•
•
•
•
Low capacitance – 0.3pF typical
Low threshold – <1.5V max
Fast switching – ton<1ns
CMOS and TTL Compatible Input
The B3520 series uses Bay Linear ULTRA REL DMOS
Process for reliability and robust performance.
These MOSFETs utilize lateral construction to achieve
low capacitance and ultra-fast switching speeds. An
integrated Zener diode provides ESD protection.
Application
•
•
•
•
LED Drivers
Level Shifting
Switch Drivers
VHF/UHF Amplifiers
Pin Connection
Ordering Information
SOT-143 Package
Lead Code Identification
(top view)
Package
SOT-143
SOT-143
Part No.
B3520K4 -X.X
B3540K4-XX
Body
Gate
1
2
4
3
Substrate
Source
Drain
Bay Linear, Inc 2418 Armstrong Street, Livermore, CA 94550 Tel: (925) 606-5950, Fax: (925) 940-9556
www.baylinear.com
B3520/B3540
Electrical Specifications (TC = +25°C unless otherwise noted)
B3520
B3540
Units
Parameter
Symbol
Test Conditions
Min
15
Typ Max
Min
15
Typ
25
Max
Drain-Source
ID=1 µA
Breakdown BVDS
25
V
V
VGS=VBS=0
Voltage
Source-Drain
Breakdown BVSD
Voltage
IS=50 nA
10
10
15
15
VGD=VBD=-5
Drain-
Substrate
BVDB
ID=50 nA, VGB=0
Source Open
V
Breakdown
Voltage
Source-
Substrate
BVSB
ID=10 µA, VGB=0
Drain Open
10
15
V
Breakdown
Voltage
VDS=10V
VDS=15V
VDS=10V
1
1
50
50
nA
µA
nA
Drain-Source
V
GS/BS=-5
ID (OFF
)
Leakage
VGS/BS=0
0.1
1
Source -
V
GD/BS=-5
GS/BS=0
IS (OFF
)
Drain
V
VDS=15V
VGS=20V
0.1
1
1
µA
µA
Leakage
Gate Leakage IGBS
Gate
VDB/SB= 0
1
10
10
VDS=VGS ID=1 µA
VSB=0
Threshold
V
GS (th)
0.3
0.7
1.5
0.3
0.7
1.5
V
Voltage
Drain-Source
ON
VGS=2.4V
VGS=4.5V
140
40
175
60
140
40
175
60
Ohm
Ohm
ID=1 mA
VSB= 0V
rDS (ON)
Resistance
B3520
Typ
B3540
Typ
Parameter
Symbol
Test Conditions
Units
Min
14
Max
Min
14
Max
VDS= 10V
ID= 20mA
Common-Source
Forward
gfS
18
18
V
f = 1MHz, VSB=0
Pulsed
Transconductance
Gate Node
Capacitance
Drain Node
Capacitance
C(gs+gd+gb)
C(gd+db)
C(gs+sb)
C(dg)
4.5
2.0
5.5
0.3
6.0
3.0
7.0
0.5
4.5
2.0
5.5
0.3
6.0
3.0
7.0
0.5
pF
pF
pF
pF
VDS= 10V
VGS=VBS= -15V
f = 1MHz
Source Node
Capacitance
Reverse Transfer
Capacitance
Turn On Delay
V∞= 10V
VG(on)= 10V
RL= 680 Ω
RG= 51Ω
td(on)
tr
0.7
0.8
1.5
1.0
1.0
0.7
0.8
1.5
1.0
1.0
ns
ns
ns
Time
Rise Time
Turn Off Delay
Td(off)
CL = 1.5pF
Time
Bay Linear, Inc 2418 Armstrong Street, Livermore, CA 94550 Tel: (925) 606-5950, Fax: (925) 940-9556
www.baylinear.com
B3520
Switching Time Test Circuit
To
+VDD
Scope
RL
510 Ω
VOUT
To
Scope
Input Pulse: td, tr < 1ns
VIN
Pulse width: 100 ns
Rep rate: 1 MHz
Sampling Scope
Tr < 360 ps
51 Ω
RIN = 1 MΩ
CIN = 2 pF
BW = 500 MHz
+5 V
VIN
50%
0 V
td(on)
td(off)
VDD
90%
50%
VOUT
0 V
10%
tf
tf
Bay Linear, Inc 2418 Armstrong Street, Livermore, CA 94550 Tel: (925) 606-5950, Fax: (925) 940-9556
www.baylinear.com
B3520
Absolute Maximum Ratings, T = +25°C
c
Parameter
Unit
Absolute Maximum[1]
SOT-143
Drain-Source Voltage
Gate-Source Voltage
Gate-Drain Voltage
V
V
+15
-0.3 / +20
V
-0.3 / +20
Continuous Drain Current
Power dissipation Tc=25
Linear Derating Factor
mA
mW
mW/C
50
300
3
Junction Temperature
Storage Temperature
°C
°C
-55 to +125
-55 to +125
Notes:
1.
Operation in excess of any one of these conditions may result in
permanent damage to the device
2.
TC = +25°C, where TC is defined to be the temperature at the
package pins where contact is made to the circuit board.
ESD WARNING: Handling Precautions Should Be Taken To Avoid Static Discharge.
Advance Information- These data sheets contain descriptions of products that are in development. The specifications are based on the engineering calculations,
computer simulations and/ or initial prototype evaluation.
Preliminary Information- These data sheets contain minimum and maximum specifications that are based on the initial device characterizations. These limits are
subject to change upon the completion of the full characterization over the specified temperature and supply voltage ranges.
The application circuit examples are only to explain the representative applications of the devices and are not intended to guarantee any circuit
design or permit any industrial property right to other rights to execute. Bay Linear takes no responsibility for any problems related to any
industrial property right resulting from the use of the contents shown in the data book. Typical parameters can and do vary in different
applications. Customer’s technical experts must validate all operating parameters including “ Typical” for each customer application.
LIFE SUPPORT AND NUCLEAR POLICY
Bay Linear products are not authorized for and should not be used within life support systems which are intended for surgical
implants into the body to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without
the specific written consent of Bay Linear President.
Bay Linear, Inc 2418 Armstrong Street, Livermore, CA 94550 Tel: (925) 606-5950, Fax: (925) 940-9556
www.baylinear.com
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