ATF1040S20W [ETC]
FAST SWITCHING THYRISTOR; 快速开关晶闸管
| 型号： | ATF1040S20W |
| 厂家： | 
ETC |
| 描述： | FAST SWITCHING THYRISTOR |
| 文件： | 总3页 (文件大小：41K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Via N. Lorenzi 8 - I 16152 GENOVA - ITALY
Tel. int. +39/(0)10 6556549 - (0)10 6556488
Fax Int. +39/(0)10 6442510
Ansaldo Trasporti s.p.a.
Unita' Semiconduttori
ANSALDO
Tx 270318 ANSUSE I -
FAST SWITCHING THYRISTOR ATF1040
Repetitive voltage up to
2000 V
1075 A
14 kA
Mean on-state current
Surge current
FINAL SPECIFICATION
Turn-off time
50 µs
mag 97 - ISSUE : 06
Tj
[°C]
Symbol
Characteristic
Conditions
Value
Unit
BLOCKING
V RRM
V RSM
V DRM
I RRM
I DRM
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Repetitive peak off-state voltage
Repetitive peak reverse current
Repetitive peak off-state current
125 2000
125 2100
125 2000
V
V
V
V=VRRM
V=VDRM
125
125
150
150
mA
mA
CONDUCTING
I T (AV)
I T (AV)
I TSM
I² t
Mean on-state current
Mean on-state current
Surge on-state current, non repetitive
I² t
180° sin, 50 Hz,Th=55°C, double side cooled
180° sin, 1 kHz,Th=55°C, double side cooled
sine wave, 10 ms
1075
1000
14
A
A
125
kA
without reverse voltage
980 x1E3
2.6
A²s
V
V T
On-state voltage
On-state current =
2000 A
25
V T(TO)
r T
Threshold voltage
125
1.40
V
On-state slope resistance
125 0.414
mohm
SWITCHING
di/dt
dv/dt
td
Critical rate of rise of on-state current, min
Critical rate of rise of off-state voltage, min
Gate controlled delay time, typical
From 75% VDRM up to 1200 A, gate 10V 5 ohm
Linear ramp up to 70% of VDRM
125
125
25
500
500
0.6
50
A/µs
V/µs
µs
VD=100V, gate source 20V, 10 ohm , tr=1 µs
tq
Circuit commutated turn-off time
di/dt = 20 A/µs, I = 800
dV/dt = 200 V/µs , up to 75% VDRM
di/dt = 60 A/µs, I = 1000
VR = 50
A
125
µs
Q rr
I rr
I H
Reverse recovery charge
Peak reverse recovery current
Holding current, typical
A
125
620
227
500
850
µC
A
V
VD=5V, gate open circuit
VD=5V, tp=30µs
25
25
mA
mA
I L
Latching current, typical
GATE
V GT
Gate trigger voltage
VD=5V
25
25
125
25
25
25
25
25
3.5
350
0.25
30
V
mA
V
I GT
Gate trigger current
VD=5V
V GD
V FGM
Non-trigger gate voltage, min.
Peak gate voltage (forward)
Peak gate current
VD=VDRM
V
I
FGM
10
A
V RGM
P GM
Peak gate voltage (reverse)
Peak gate power dissipation
Average gate power dissipation
5
V
Pulse width 100 µs
150
3
W
W
P G(AV)
MOUNTING
R th(j-h)
Thermal impedance, DC
Operating junction temperature
Mounting force
Junction to heatsink, double side cooled
26
°C/kW
°C
T j
-30 / 125
14.0 / 17.0
500
F
kN
Mass
g
tq code
D 10 µs C 12 µs B 15 µs A 20 µs L 25 µs
M 30 µs N 35 µs P 40 µs R 45 µs S 50 µs
T 60 µs U 70 µs W 80 µs X 100µs Y 150µs
tq code
ORDERING INFORMATION : ATF1040 S 20 S
VDRM&VRRM/100
standard specification
ATF1040 FAST SWITCHING THYRISTOR
ANSALDO
FINAL SPECIFICATION mag 97 - ISSUE : 06
SWITCHING CHARACTERISTICS
REVERSE RECOVERY CHARGE
Tj = 125 °C
1800
1600
1400
1200
1000
800
600
400
200
0
1000 A
500 A
250 A
0
50
100
150
200
250
300
350
di/dt [A/µs]
REVERSE RECOVERY CURRENT
Tj = 125 °C
1000
800
600
400
200
0
1000 A
500 A
250 A
0
50
100
150
200
250
300
350
di/dt [A/µs]
di/dt
ta = Irr / (di/dt)
Softness (s factor) s = tb / ta
Energy dissipation during recovery Er = Vr · (Qrr - Irr ·ta / 2 )
tb = trr - ta
IF
ta
tb
Irr
Vr
ATF1040 FAST SWITCHING THYRISTOR
ANSALDO
FINAL SPECIFICATION mag 97 - ISSUE : 06
ON-STATE CHARACTERISTIC
Tj = 125 °C
SURGE CHARACTERISTIC
Tj = 125 °C
3500
3000
2500
2000
1500
1000
500
14
12
10
8
6
4
2
0
0
0.6
1.1
1.6
2.1
2.6
1
10
n° cycles
100
On-state Voltage [V]
TRANSIENT THERMAL IMPEDANCE
DOUBLE SIDE COOLED
35
30
25
20
15
10
5
0
0.001
0.01
0.1
1
10
100
t[s]
Cathode terminal type DIN 46244 - A 4.8 - 0.8
Gate terminal type AMP 60598 - 1
Distributed by
All the characteristics given in this data sheet are guaranteed only with uniform
clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm
and roughness < 2 µm.
In the interest of product improvement ANSALDO reserves the right to change
any data given in this data sheet at any time without previous notice.
If not stated otherwise the maximum value of ratings (simbols over shaded
background) and characteristics is reported.
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