AT24C01AY3-10YI-2.7 [ETC]
SERIAL EEPROM|128X8|CMOS|LLCC|8PIN|PLASTIC ; 串行EEPROM | 128X8 | CMOS | LLCC | 8PIN |塑料\n型号: | AT24C01AY3-10YI-2.7 |
厂家: | ETC |
描述: | SERIAL EEPROM|128X8|CMOS|LLCC|8PIN|PLASTIC
|
文件: | 总23页 (文件大小:331K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Features
• Low-voltage and Standard-voltage Operation
– 2.7 (VCC = 2.7V to 5.5V)
– 1.8 (VCC = 1.8V to 5.5V)
• Internally Organized 128 x 8 (1K), 256 x 8 (2K), 512 x 8 (4K),
1024 x 8 (8K) or 2048 x 8 (16K)
• 2-wire Serial Interface
• Schmitt Trigger, Filtered Inputs for Noise Suppression
• Bi-directional Data Transfer Protocol
• 100 kHz (1.8V, 2.5V, 2.7V) and 400 kHz (5V) Compatibility
• Write Protect Pin for Hardware Data Protection
• 8-byte Page (1K, 2K), 16-byte Page (4K, 8K, 16K) Write Modes
• Partial Page Writes are Allowed
2-wire
Serial EEPROM
1K (128 x 8)
• Self-timed Write Cycle (10 ms max)
• High-reliability
– Endurance: 1 Million Write Cycles
– Data Retention: 100 Years
• Automotive Grade and Extended Temperature Devices Available
• 8-lead PDIP, 8-lead JEDEC SOIC, 8-lead MAP, 8-lead TAP and 8-lead TSSOP Packages
2K (256 x 8)
4K (512 x 8)
Description
8K (1024 x 8)
16K (2048 x 8)
The AT24C01A/02/04/08/16 provides 1024/2048/4096/8192/16384 bits of serial elec-
trically erasable and programmable read-only memory (EEPROM) organized as
128/256/512/1024/2048 words of 8 bits each. The device is optimized for use in many
industrial and commercial applications where low-power and low-voltage operation
are essential. The AT24C01A/02/04/08/16 is available in space-saving 8-pin PDIP,
8-lead JEDEC SOIC, 8-lead MAP, 8-lead TAP and 8-lead TSSOP packages and is
accessed via a 2-wire serial interface. In addition, the entire family is available in 2.7V
(2.7V to 5.5V) and 1.8V (1.8V to 5.5V) versions.
AT24C01A
AT24C02
AT24C04
AT24C08
AT24C16
8-lead TSSOP
Pin Configurations
Pin Name Function
A0
A1
1
2
3
4
8
7
6
5
VCC
WP
A0 - A2
SDA
SCL
WP
Address Inputs
A2
SCL
SDA
GND
Serial Data
Serial Clock Input
Write Protect
No Connect
8-lead MAP/TAP
A0
A1
1
2
3
4
8
7
6
5
VCC
WP
NC
A2
SCL
SDA
GND
8-pin PDIP
8-lead SOIC
A0
1
2
3
4
8
7
6
5
VCC
WP
A1
A2
A0
1
2
3
4
8
7
6
5
VCC
WP
SCL
SDA
A1
A2
GND
SCL
SDA
GND
Rev. 0180G–SEEPR–02/02
Absolute Maximum Ratings
*NOTICE:
Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent dam-
age to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect device
reliability.
Operating Temperature.................................. -55°C to +125°C
Storage Temperature ..................................... -65°C to +150°C
Voltage on Any Pin
with Respect to Ground .....................................-1.0V to +7.0V
Maximum Operating Voltage .......................................... 6.25V
DC Output Current........................................................ 5.0 mA
Block Diagram
2
AT24C01A/02/04/08/16
0180G–SEEPR–02/02
AT24C01A/02/04/08/16
Pin Description
SERIAL CLOCK (SCL): The SCL input is used to positive edge clock data into each
EEPROM device and negative edge clock data out of each device.
SERIAL DATA (SDA): The SDA pin is bi-directional for serial data transfer. This pin is
open-drain driven and may be wire-ORed with any number of other open-drain or open-
collector devices.
DEVICE/PAGE ADDRESSES (A2, A1, A0): The A2, A1 and A0 pins are device
address inputs that are hard wired for the AT24C01A and the AT24C02. As many as
eight 1K/2K devices may be addressed on a single bus system (device addressing is
discussed in detail under the Device Addressing section).
The AT24C04 uses the A2 and A1 inputs for hard wire addressing and a total of four 4K
devices may be addressed on a single bus system. The A0 pin is a no connect.
The AT24C08 only uses the A2 input for hardwire addressing and a total of two 8K
devices may be addressed on a single bus system. The A0 and A1 pins are no
connects.
The AT24C16 does not use the device address pins, which limits the number of devices
on a single bus to one. The A0, A1 and A2 pins are no connects.
WRITE PROTECT (WP): The AT24C01A/02/04/16 has a Write Protect pin that provides
hardware data protection. The Write Protect pin allows normal read/write operations
when connected to ground (GND). When the Write Protect pin is connected to VCC, the
write protection feature is enabled and operates as shown in the following table.
Part of the Array Protected
WP Pin
Status
At VCC
At GND
24C01A
24C02
24C04
24C08
24C16
Upper
Half
(8K)
Array
Normal
Read/
Write
Operation
Full (1K)
Array
Full (2K)
Array
Full (4K)
Array
Normal Read/Write Operations
Memory Organization AT24C01A, 1K SERIAL EEPROM: Internally organized with 16 pages of 8 bytes each,
the 1K requires a 7-bit data word address for random word addressing.
AT24C02, 2K SERIAL EEPROM: Internally organized with 32 pages of 8 bytes each,
the 2K requires an 8-bit data word address for random word addressing.
AT24C04, 4K SERIAL EEPROM: Internally organized with 32 pages of 16 bytes each,
the 4K requires a 9-bit data word address for random word addressing.
AT24C08, 8K SERIAL EEPROM: Internally organized with 64 pages of 16 bytes each,
the 8K requires a 10-bit data word address for random word addressing.
AT24C16, 16K SERIAL EEPROM: Internally organized with 128 pages of 16 bytes
each, the 16K requires an 11-bit data word address for random word addressing.
3
0180G–SEEPR–02/02
Pin Capacitance(1)
Applicable over recommended operating range from TA = 25°C, f = 1.0 MHz, VCC = +1.8V.
Symbol
CI/O
Test Condition
Max
8
Units
pF
Conditions
VI/O = 0V
VIN = 0V
Input/Output Capacitance (SDA)
Input Capacitance (A0, A1, A2, SCL)
CIN
6
pF
Note:
1. This parameter is characterized and is not 100% tested.
DC Characteristics
Applicable over recommended operating range from: TAI = -40°C to +85°C, VCC = +1.8V to +5.5V, TAC = 0°C to +70°C,
CC = +1.8V to +5.5V (unless otherwise noted).
V
Symbol
Parameter
Test Condition
Min
1.8
2.5
2.7
4.5
Typ
Max
5.5
Units
V
VCC1
VCC2
VCC3
VCC4
ICC
Supply Voltage
Supply Voltage
5.5
V
Supply Voltage
5.5
V
Supply Voltage
5.5
V
Supply Current VCC = 5.0V
Supply Current VCC = 5.0V
Standby Current VCC = 1.8V
Standby Current VCC = 2.5V
Standby Current VCC = 2.7V
Standby Current VCC = 5.0V
Input Leakage Current
Output Leakage Current
Input Low Level(1)
READ at 100 kHz
WRITE at 100 kHz
VIN = VCC or VSS
VIN = VCC or VSS
VIN = VCC or VSS
VIN = VCC or VSS
VIN = VCC or VSS
VOUT = VCC or VSS
0.4
2.0
1.0
mA
mA
µA
µA
µA
µA
µA
µA
V
ICC
3.0
ISB1
ISB2
ISB3
ISB4
ILI
0.6
3.0
1.4
4.0
1.6
4.0
8.0
18.0
3.0
0.10
0.05
ILO
3.0
VIL
-0.6
VCC x 0.3
VCC + 0.5
0.4
VIH
Input High Level(1)
VCC x 0.7
V
VOL2
Output Low Level VCC = 3.0V
Output Low Level VCC = 1.8V
IOL = 2.1 mA
V
VOL1
IOL = 0.15 mA
0.2
V
Note:
1. VIL min and VIH max are reference only and are not tested.
4
AT24C01A/02/04/08/16
0180G–SEEPR–02/02
AT24C01A/02/04/08/16
AC Characteristics
Applicable over recommended operating range from TA = -40°C to +85°C, VCC = +1.8V to +5.5V, CL = 1 TTL Gate and
100 pF (unless otherwise noted).
2.7-, 2.5-, 1.8-volt
5.0-volt
Symbol
fSCL
tLOW
tHIGH
tI
Parameter
Min
Max
Min
Max
Units
kHz
µs
Clock Frequency, SCL
Clock Pulse Width Low
Clock Pulse Width High
Noise Suppression Time(1)
Clock Low to Data Out Valid
100
400
4.7
4.0
1.2
0.6
µs
100
4.5
50
ns
tAA
0.1
4.7
0.1
1.2
0.9
µs
tBUF
Time the bus must be free before
a new transmission can start(1)
µs
tHD.STA
tSU.STA
tHD.DAT
tSU.DAT
tR
Start Hold Time
4.0
4.7
0
0.6
0.6
0
µs
µs
µs
ns
µs
ns
µs
ns
ms
Start Setup Time
Data In Hold Time
Data In Setup Time
Inputs Rise Time(1)
Inputs Fall Time(1)
Stop Setup Time
Data Out Hold Time
Write Cycle Time
5.0V, 25°C, Byte Mode
200
100
1.0
0.3
tF
300
300
tSU.STO
tDH
4.7
0.6
50
100
tWR
10
10
Endurance(1)
1M
1M
Write
Cycles
Note:
1. This parameter is characterized and is not 100% tested.
5
0180G–SEEPR–02/02
Device Operation
CLOCK and DATA TRANSITIONS: The SDA pin is normally pulled high with an exter-
nal device. Data on the SDA pin may change only during SCL low time periods (refer to
Data Validity timing diagram). Data changes during SCL high periods will indicate a start
or stop condition as defined below.
START CONDITION: A high-to-low transition of SDA with SCL high is a start condition
which must precede any other command (refer to Start and Stop Definition timing
diagram).
STOP CONDITION: A low-to-high transition of SDA with SCL high is a stop condition.
After a read sequence, the stop command will place the EEPROM in a standby power
mode (refer to Start and Stop Definition timing diagram).
ACKNOWLEDGE: All addresses and data words are serially transmitted to and from the
EEPROM in 8-bit words. The EEPROM sends a zero to acknowledge that it has
received each word. This happens during the ninth clock cycle.
STANDBY MODE: The AT24C01A/02/04/08/16 features a low-power standby mode
which is enabled: (a) upon power-up and (b) after the receipt of the STOP bit and the
completion of any internal operations.
MEMORY RESET: After an interruption in protocol, power loss or system reset, any 2-
wire part can be reset by following these steps:
1. Clock up to 9 cycles.
2. Look for SDA high in each cycle while SCL is high.
3. Create a start condition.
6
AT24C01A/02/04/08/16
0180G–SEEPR–02/02
AT24C01A/02/04/08/16
Bus Timing
SCL: Serial Clock, SDA: Serial Data I/O
Write Cycle Timing
SCL: Serial Clock, SDA: Serial Data I/O
(1)
tWR
Note:
1. The write cycle time tWR is the time from a valid stop condition of a write sequence to the end of the internal clear/write cycle.
7
0180G–SEEPR–02/02
Data Validity
Start and Stop Definition
Output Acknowledge
8
AT24C01A/02/04/08/16
0180G–SEEPR–02/02
AT24C01A/02/04/08/16
Device Addressing
The 1K, 2K, 4K, 8K and 16K EEPROM devices all require an 8-bit device address word
following a start condition to enable the chip for a read or write operation (refer to Figure
1).
The device address word consists of a mandatory one, zero sequence for the first four
most significant bits as shown. This is common to all the EEPROM devices.
The next 3 bits are the A2, A1 and A0 device address bits for the 1K/2K EEPROM.
These 3 bits must compare to their corresponding hard-wired input pins.
The 4K EEPROM only uses the A2 and A1 device address bits with the third bit being a
memory page address bit. The two device address bits must compare to their corre-
sponding hard-wired input pins. The A0 pin is no connect.
The 8K EEPROM only uses the A2 device address bit with the next 2 bits being for
memory page addressing. The A2 bit must compare to its corresponding hard-wired
input pin. The A1 and A0 pins are no connect.
The 16K does not use any device address bits but instead the 3 bits are used for mem-
ory page addressing. These page addressing bits on the 4K, 8K and 16K devices
should be considered the most significant bits of the data word address which follows.
The A0, A1 and A2 pins are no connect.
The eighth bit of the device address is the read/write operation select bit. A read opera-
tion is initiated if this bit is high and a write operation is initiated if this bit is low.
Upon a compare of the device address, the EEPROM will output a zero. If a compare is
not made, the chip will return to a standby state.
Write Operations
BYTE WRITE: A write operation requires an 8-bit data word address following the
device address word and acknowledgment. Upon receipt of this address, the EEPROM
will again respond with a zero and then clock in the first 8-bit data word. Following
receipt of the 8-bit data word, the EEPROM will output a zero and the addressing
device, such as a microcontroller, must terminate the write sequence with a stop condi-
tion. At this time the EEPROM enters an internally timed write cycle, tWR, to the
nonvolatile memory. All inputs are disabled during this write cycle and the EEPROM will
not respond until the write is complete (refer to Figure 2).
PAGE WRITE: The 1K/2K EEPROM is capable of an 8-byte page write, and the 4K, 8K
and 16K devices are capable of 16-byte page writes.
A page write is initiated the same as a byte write, but the microcontroller does not send
a stop condition after the first data word is clocked in. Instead, after the EEPROM
acknowledges receipt of the first data word, the microcontroller can transmit up to seven
(1K/2K) or fifteen (4K, 8K, 16K) more data words. The EEPROM will respond with a zero
after each data word received. The microcontroller must terminate the page write
sequence with a stop condition (refer to Figure 3).
The data word address lower three (1K/2K) or four (4K, 8K, 16K) bits are internally
incremented following the receipt of each data word. The higher data word address bits
are not incremented, retaining the memory page row location. When the word address,
internally generated, reaches the page boundary, the following byte is placed at the
beginning of the same page. If more than eight (1K/2K) or sixteen (4K, 8K, 16K) data
words are transmitted to the EEPROM, the data word address will “roll over” and previ-
ous data will be overwritten.
9
0180G–SEEPR–02/02
ACKNOWLEDGE POLLING: Once the internally timed write cycle has started and the
EEPROM inputs are disabled, acknowledge polling can be initiated. This involves sending a
start condition followed by the device address word. The read/write bit is representative of the
operation desired. Only if the internal write cycle has completed will the EEPROM respond
with a zero allowing the read or write sequence to continue.
Read
Operations
Read operations are initiated the same way as write operations with the exception that the
read/write select bit in the device address word is set to one. There are three read operations:
current address read, random address read and sequential read.
CURRENT ADDRESS READ: The internal data word address counter maintains the last
address accessed during the last read or write operation, incremented by one. This address
stays valid between operations as long as the chip power is maintained. The address “roll
over” during read is from the last byte of the last memory page to the first byte of the first page.
The address “roll over” during write is from the last byte of the current page to the first byte of
the same page.
Once the device address with the read/write select bit set to one is clocked in and acknowl-
edged by the EEPROM, the current address data word is serially clocked out. The
microcontroller does not respond with an input zero but does generate a following stop condi-
tion (refer to Figure 4).
RANDOM READ: A random read requires a “dummy” byte write sequence to load in the data
word address. Once the device address word and data word address are clocked in and
acknowledged by the EEPROM, the microcontroller must generate another start condition.
The microcontroller now initiates a current address read by sending a device address with the
read/write select bit high. The EEPROM acknowledges the device address and serially clocks
out the data word. The microcontroller does not respond with a zero but does generate a fol-
lowing stop condition (refer to Figure 5).
SEQUENTIAL READ: Sequential reads are initiated by either a current address read or a ran-
dom address read. After the microcontroller receives a data word, it responds with an
acknowledge. As long as the EEPROM receives an acknowledge, it will continue to increment
the data word address and serially clock out sequential data words. When the memory
address limit is reached, the data word address will “roll over” and the sequential read will con-
tinue. The sequential read operation is terminated when the microcontroller does not respond
with a zero but does generate a following stop condition (refer to Figure 6).
10
AT24C01A/02/04/08/16
0180G–SEEPR–02/02
AT24C01A/02/04/08/16
Figure 1. Device Address
Figure 2. Byte Write
Figure 3. Page Write
(* = DON’T CARE bit for 1K)
11
0180G–SEEPR–02/02
Figure 4. Current Address Read
Figure 5. Random Read
(* = DON’T CARE bit for 1K)
Figure 6. Sequential Read
12
AT24C01A/02/04/08/16
0180G–SEEPR–02/02
AT24C01A/02/04/08/16
AT24C01A Ordering Information
tWR (max)
ICC (max)
ISB (max)
fMAX
(ms)
(µA)
(µA)
(kHz)
Ordering Code
Package
Operation Range
10
1500
4
100
AT24C01A-10PI-2.7
AT24C01A-10SI-2.7
AT24C01A-10TI-2.7
AT24C01AY1-10YI-2.7
AT24C01AY3-10YI-2.7
8P3
8S1
8A2
8Y1
8Y3
Industrial
(-40°C to 85°C)
10
800
3
100
AT24C01A-10PI-1.8
AT24C01A-10SI-1.8
AT24C01A-10TI-1.8
AT24C01AY1-10YI-1.8
AT24C01AY3-10YI-1.8
8P3
8S1
8A2
8Y1
8Y3
Industrial
(-40°C to 85°C)
Package Type
8P3
8S1
8A2
8Y1
8Y3
8-pin, 0.300" Wide, Plastic Dual Inline Package (PDIP)
8-lead, 0.150" Wide, Plastic Gull Wing Small Outline (JEDEC SOIC)
8-lead, 0.170" Wide, Thin Shrink Small Outline Package (TSSOP)
8-lead, Dual Footprint, Non-leaded, Miniature Array Package (MAP)
8-lead, Dual Footprint, Non-leaded, Thin Array Package (TAP)
Options
-2.7
-1.8
Low-voltage (2.7V to 5.5V)
Low-voltage (1.8V to 5.5V)
13
0180G–SEEPR–02/02
AT24C02 Ordering Information
tWR (max)
ICC (max)
ISB (max)
fMAX
(ms)
(µA)
(µA)
(kHz)
Ordering Code
Package
Operation Range
10
1500
4
100
AT24C02-10PI-2.7
AT24C02N-10SI-2.7
AT24C02-10TI-2.7
AT24C02Y1-10YI-2.7
AT24C02Y3-10YI-2.7
8P3
8S1
8A2
8Y1
8Y3
Industrial
(-40°C to 85°C)
10
800
3
100
AT24C02-10PI-1.8
AT24C02N-10SI-1.8
AT24C02-10TI-1.8
AT24C02Y1-10YI-1.8
AT24C02Y3-10YI-1.8
8P3
8S1
8A2
8Y1
8Y3
Industrial
(-40°C to 85°C)
Package Type
8P3
8S1
8A2
8Y1
8Y3
8-pin, 0.300" Wide, Plastic Dual Inline Package (PDIP)
8-lead, 0.150" Wide, Plastic Gull Wing Small Outline (JEDEC SOIC)
8-lead, 0.170" Wide, Thin Shrink Small Outline Package (TSSOP)
8-lead, Dual Footprint, Non-leaded, Miniature Array Package (MAP)
8-lead, Dual Footprint, Non-leaded, Thin Array Package (TAP)
Options
-2.7
-1.8
Low-voltage (2.7V to 5.5V)
Low-voltage (1.8V to 5.5V)
14
AT24C01A/02/04/08/16
0180G–SEEPR–02/02
AT24C01A/02/04/08/16
AT24C04 Ordering Information
tWR (max)
ICC (max)
ISB (max)
fMAX
(ms)
(µA)
(µA)
(kHz)
Ordering Code
Package
Operation Range
10
1500
4
100
AT24C04-10PI-2.7
AT24C04N-10SI-2.7
AT24C04-10TI-2.7
AT24C04Y1-10YI-2.7
AT24C04Y3-10YI-2.7
8P3
8S1
8A2
8Y1
8Y3
Industrial
(-40°C to 85°C)
10
800
3
100
AT24C04-10PI-1.8
AT24C04N-10SI-1.8
AT24C04-10TI-1.8
AT24C04Y1-10YI-1.8
AT24C04Y3-10YI-1.8
8P3
8S1
8A2
8Y1
8Y3
Industrial
(-40°C to 85°C)
Package Type
8P3
8S1
8A2
8Y1
8Y3
8-pin, 0.300" Wide, Plastic Dual Inline Package (PDIP)
8-lead, 0.150" Wide, Plastic Gull Wing Small Outline (JEDEC SOIC)
8-lead, 0.170" Wide, Thin Shrink Small Outline Package (TSSOP)
8-lead, Dual Footprint, Non-leaded, Miniature Array Package (MAP)
8-lead, Dual Footprint, Non-leaded, Thin Array Package (TAP)
Options
-2.7
-1.8
Low-voltage (2.7V to 5.5V)
Low-voltage (1.8V to 5.5V)
15
0180G–SEEPR–02/02
AT24C08 Ordering Information
tWR (max)
ICC (max)
ISB (max)
fMAX
(ms)
(µA)
(µA)
(kHz)
Ordering Code
Package
Operation Range
10
1500
4
100
AT24C08-10PI-2.7
AT24C08N-10SI-2.7
AT24C08-10TI-2.7
AT24C08Y1-10YI-2.7
AT24C08Y3-10YI-2.7
8P3
8S1
8A2
8Y1
8Y3
Industrial
(-40°C to 85°C)
10
800
3
100
AT24C08-10PI-1.8
AT24C08N-10SI-1.8
AT24C08-10TI-1.8
AT24C08Y1-10YI-1.8
AT24C08Y3-10YI-1.8
8P3
8S1
8A2
8Y1
8Y3
Industrial
(-40°C to 85°C)
Package Type
8P3
8S1
8A2
8Y1
8Y3
8-pin, 0.300" Wide, Plastic Dual Inline Package (PDIP)
8-lead, 0.150" Wide, Plastic Gull Wing Small Outline (JEDEC SOIC)
8-lead, 0.170" Wide, Thin Shrink Small Outline Package (TSSOP)
8-lead, Dual Footprint, Non-leaded, Miniature Array Package (MAP)
8-lead, Dual Footprint, Non-leaded, Thin Array Package (TAP)
Options
-2.7
-1.8
Low-voltage (2.7V to 5.5V)
Low-voltage (1.8V to 5.5V)
16
AT24C01A/02/04/08/16
0180G–SEEPR–02/02
AT24C01A/02/04/08/16
AT24C16 Ordering Information
tWR (max)
ICC (max)
ISB (max)
fMAX
(ms)
(µA)
(µA)
(kHz)
Ordering Code
Package
Operation Range
10
1500
4
100
AT24C16-10PI-2.7
AT24C16N-10SI-2.7
AT24C16-10TI-2.7
AT24C16Y1-10YI-2.7
AT24C16Y3-10YI-2.7
8P3
8S1
8A2
8Y1
8Y3
Industrial
(-40°C to 85°C)
10
800
3
100
AT24C16-10PI-1.8
AT24C16N-10SI-1.8
AT24C16-10TI-1.8
AT24C16Y1-10YI-1.8
AT24C16Y3-10YI-1.8
8P3
8S1
8A2
8Y1
8Y3
Industrial
(-40°C to 85°C)
Package Type
8P3
8S1
8A2
8Y1
8Y3
8-pin, 0.300" Wide, Plastic Dual Inline Package (PDIP)
8-lead, 0.150" Wide, Plastic Gull Wing Small Outline (JEDEC SOIC)
8-lead, 0.170" Wide, Thin Shrink Small Outline Package (TSSOP)
8-lead, Dual Footprint, Non-leaded, Miniature Array Package (MAP)
8-lead, Dual Footprint, Non-leaded, Thin Array Package (TAP)
Options
-2.7
-1.8
Low-voltage (2.7V to 5.5V)
Low-voltage (1.8V to 5.5V)
17
0180G–SEEPR–02/02
Packaging Information
8P3 – PDIP
E
1
E1
N
Top View
c
eA
End View
COMMON DIMENSIONS
(Unit of Measure = inches)
D
e
MIN
MAX
NOM
NOTE
SYMBOL
D1
A2 A
A
0.210
0.195
0.022
0.070
0.045
0.014
0.400
2
A2
b
0.115
0.014
0.045
0.030
0.008
0.355
0.005
0.300
0.240
0.130
0.018
0.060
0.039
0.010
0.365
5
6
6
b2
b3
c
D
3
3
4
3
b2
L
D1
E
b3
4 PLCS
0.310
0.250
0.325
0.280
b
E1
e
0.100 BSC
0.300 BSC
0.130
Side View
eA
L
4
2
0.115
0.150
Notes: 1. This drawing is for general information only; refer to JEDEC Drawing MS-001, Variation BA for additional information.
2. Dimensions A and L are measured with the package seated in JEDEC seating plane Gauge GS-3.
3. D, D1 and E1 dimensions do not include mold Flash or protrusions. Mold Flash or protrusions shall not exceed 0.010 inch.
4. E and eA measured with the leads constrained to be perpendicular to datum.
5. Pointed or rounded lead tips are preferred to ease insertion.
6. b2 and b3 maximum dimensions do not include Dambar protrusions. Dambar protrusions shall not exceed 0.010 (0.25 mm).
01/09/02
TITLE
DRAWING NO.
REV.
2325 Orchard Parkway
San Jose, CA 95131
8P3, 8-lead, 0.300" Wide Body, Plastic Dual
In-line Package (PDIP)
8P3
B
R
18
AT24C01A/02/04/08/16
0180G–SEEPR–02/02
AT24C01A/02/04/08/16
8S1 – JEDEC SOIC
1
3
2
H
N
Top View
e
B
A
D
COMMON DIMENSIONS
(Unit of Measure = mm)
Side View
MIN
–
MAX
1.75
0.51
0.25
5.00
4.00
NOM
NOTE
SYMBOL
A
B
C
D
E
e
–
A2
L
–
–
–
–
–
–
–
–
1.27 BSC
E
H
L
–
–
–
–
6.20
1.27
End View
Note:
This drawing is for general information only. Refer to JEDEC Drawing MS-012 for proper dimensions, tolerances, datums, etc.
10/10/01
TITLE
DRAWING NO.
REV.
2325 Orchard Parkway
San Jose, CA 95131
8S1, 8-lead (0.150" Wide Body), Plastic Gull Wing
8S1
A
R
Small Outline (JEDEC SOIC)
19
0180G–SEEPR–02/02
8A2 – TSSOP
3
2
1
E
E1
N
Top View
A2
A
b
COMMON DIMENSIONS
(Unit of Measure = mm)
e
MIN
MAX
NOM
3.00
NOTE
SYMBOL
D
2.90
3.10
2, 5
D
E
6.40 BSC
4.40
Side View
E1
A
4.30
–
4.50
1.20
1.05
0.30
3, 5
4
–
A2
b
0.80
0.19
1.00
–
e
0.65 BSC
0.60
L
L
0.45
0.75
L1
L1
1.00 REF
End View
Notes: 1. This drawing is for general information only. Refer to JEDEC Drawing MO-153, Variation AA, for proper dimensions, tolerances,
datums, etc.
2. Dimension "D" does not include mold Flash, protrusions or gate burrs. Mold Flash, protrusions and gate burrs shall not exceed
0.15 mm (0.006 in) per side.
3. Dimension "E1" does not include inter-lead Flash or protrusions. Inter-lead Flash and protrusions shall not exceed 0.25 mm
(0.010 in) per side.
4. Dimension "b" does not include Dambar protrusion. Allowable Dambar protrusion shall be 0.08 mm total in excess of the
b dimension at maximum material condition. Dambar cannot be located on the lower radius of the foot. Minimum space between
protrusion and adjacent lead is 0.07 mm.
10/26/01
5. Dimension "D" and "E1" to be determined at Datum Plane H.
DRAWING NO.
TITLE
REV.
2325 Orchard Parkway
San Jose, CA 95131
8A2, 8-lead, 4.4 mm Body, Plastic
A
8A2
R
Thin Shrink Small Outline Package (TSSOP)
20
AT24C01A/02/04/08/16
0180G–SEEPR–02/02
AT24C01A/02/04/08/16
8Y1 – MAP
PIN 1 INDEX AREA
A
PIN 1 ID
D1
D
E1
e
b
L
e1
E
A1
Bottom View
Top View
Side View
COMMON DIMENSIONS
(Unit of Measure = mm)
SYMBOL
MIN
–
MAX
0.90
0.05
5.10
3.20
3.15
2.15
0.35
NOM
–
NOTE
A
A1
D
0.00
4.70
2.80
2.85
1.85
0.25
–
4.90
A
E
3.00
D1
E1
b
3.00
2.00
End View
0.30
e
0.65 TYP
1.95 REF
0.60
e1
L
0.50
0.70
11/16/01
TITLE
DRAWING NO.
REV.
2325 Orchard Parkway
San Jose, CA 95131
8Y1, 8-lead (4.90 x 3.00 mm Body), MSOP Array Package
(MAP) Y1
8Y1
A
R
21
0180G–SEEPR–02/02
8Y3 – TAP
PIN 1 INDEX AREA
A
PIN 1 ID
D1
D
E1
e
b
L
e1
E
A1
Bottom View
Top View
Side View
COMMON DIMENSIONS
(Unit of Measure = mm)
SYMBOL
MIN
–
MAX
0.90
0.05
6.60
3.85
5.15
3.20
0.30
NOM
–
NOTE
A
A1
D
0.00
6.20
3.45
4.85
2.90
0.20
–
6.40
A
E
3.65
D1
E1
b
5.00
End View
3.05
0.25
e
0.65 TYP
1.95 REF
0.40
e1
L
0.30
0.50
11/16/01
TITLE
DRAWING NO.
REV.
A
2325 Orchard Parkway
San Jose, CA 95131
8Y3, 8-lead (6.40 x 3.65 mm Body), TSSOP Array Package
(TAP) Y3
8Y3
R
22
AT24C01A/02/04/08/16
0180G–SEEPR–02/02
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© Atmel Corporation 2002.
Atmel Corporation makes no warranty for the use of its products, other than those expressly contained in the Company’s standard warranty
which is detailed in Atmel’s Terms and Conditions located on the Company’s web site. The Company assumes no responsibility for any errors
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Terms and product names in this document may be trademarks of others.
0180G–SEEPR–02/02
xM
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