AB-036 [ETC]

AB-036 - DIODE-BASED TEMPERATURE MEASUREMENT ; AB - 036 - 基于二极管的温度测量\n
AB-036
型号: AB-036
厂家: ETC    ETC
描述:

AB-036 - DIODE-BASED TEMPERATURE MEASUREMENT
AB - 036 - 基于二极管的温度测量\n

二极管
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®
AP P LICATION BULLETIN  
Mailing Address: PO Box 11400 • Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd. • Tucson, AZ 85706  
Tel: (602) 746-1111 • Twx: 910-952-111 • Telex: 066-6491 • FAX (602) 889-1510 • Immediate Product Info: (800) 548-6132  
DIODE-BASED TEMPERATURE MEASUREMENT  
BY R. MARK STITT AND DAVID KUNST (602) 746-7445  
Diodes are frequently used as temperature sensors in a wide  
4.5V to 36V  
variety of moderate-precision temperature measurement  
applications. The relatively high temperature coefficient of  
about –2mV/°C is fairly linear. To make a temperature  
measurement system with a diode requires excitation, offset-  
ting, and amplification. The circuitry can be quite simple.  
This Bulletin contains a collection of circuits to address a  
variety of applications.  
REF200  
100µA  
100µA  
R2  
A1  
VO  
OPA1013  
THE DIODE  
Just about any silicon diode can be used as a temperature  
measurement transducer. But the Motorola MTS102 Silicon  
Temperature Sensor is a diode specifically designed and  
optimized for this function. It is intended for temperature  
sensing applications in automotive, consumer and industrial  
products where low cost and high accuracy are important.  
Packaged in a TO-92 package it features precise temperature  
accuracy of ±2°C from –40°C to +150°C.  
VO = VBE (1 + R2/R1) – 100µA • R2  
R1  
Where:  
VBE = voltage across diode (V)  
Motorola  
MTS102  
Zero and span adjustments with  
R1 and R2 are interactive.  
Figure 1. Simple Diode-based Temperature Measurement  
Circuit.  
interactive adjustment technique. Another possible disad-  
vantage is that the temperature to voltage conversion is  
inverting. In other words, a positive change in temperature  
results in a negative change in output voltage. If the output  
is to be processed in a digital system, neither of these  
limitations may be a disadvantage.  
EXCITATION  
A current source is the best means for diode excitation. In  
some instances, resistor biasing can provide an adequate  
approximation, but power supply variations and ripple can  
cause significant errors with this approach. These problems  
are exacerbated in applications with low power supply  
voltages such as 5V single supply systems. Since the MTS102  
is specified for 100µA operation, the Burr-Brown REF200  
Dual 100µA Current Source/Sink makes the perfect match.  
One current source can be used for excitation and the other  
current source can be used for offsetting.  
The following relationships can be used to calculate nominal  
resistor values for the Figure 1 circuit.  
BASIC TRANSFER FUNCTION  
VO = VBE (1 + R2/R1) – 100µA • R2  
CALCULATING RESISTOR VALUES  
AMPLIFICATION  
In most instances, any precision op amp can be used for  
diode signal conditioning. Speed is usually not a concern.  
When ±15V supplies are available, the low cost precision  
OPA177 is recommended. For 5V single-supply applica-  
tions, the OPA1013 Dual Single-Supply op amp is recom-  
mended. Its inputs can common-mode to its negative power  
supply rail (ground in single-supply applications), and its  
output can swing to within about 15mV of the negative rail.  
R1 =  
(δVO/δT) • (VBE25 + TC • (TMIN –25°C)) – (TC • V1)  
100µA • ((δVO/δT) – TC)  
(δVO/δT)  
R2 = R1 • (  
Where:  
– 1)  
TC  
Figure 1 shows the simplest diode-based temperature mea-  
surement system. One of the 100µA current sources in the  
REF200 is used for diode excitation. The other current  
source is used for offsetting. One disadvantage of this circuit  
is that the span (GAIN) and zero (OFFSET) adjustments are  
interactive. You must either accept the initial errors or use an  
R1, R2 = Resistor values ()  
VBE = Voltage across diode (V)  
VBE25 = Diode voltage at 25°C (V)  
Three choices are available for the MTS102—See table  
on page 2.  
©1991 Burr-Brown Corporation  
AB-036  
Printed in U.S.A. September, 1991  
V1 = Output voltage of circuit at TMIN (V)  
VO = Output voltage of circuit (V)  
(δVO/δT)  
R2 = R1 • (  
Where:  
– 1)  
TC  
TC = Diode temperature coefficient (V/°C)  
TC value depends on VBE25—See table below.  
TMIN = Minimum process temperature (°C)  
RZERO = Zero (offset) adjust resistor ()  
Others = as before  
δVO/δT = Desired output voltage change for given  
temperature change (V/°C)  
EXAMPLE  
(Note: Must be negative for Figure 1 circuit.)  
Design a temperature measurement system with a 0 to –1.0V  
output for a 0 to 100°C temperature.  
AVAILABLE VBE25 AND TC VALUES FOR  
MOTOROLA MTS102 TEMPERATURE SENSOR  
TMIN = 0°C  
VBE25  
(V)  
TC  
(V/°C)  
δVO/δT = (–1V – 0V)/(100°C – 0°C) = –0.01V/°C  
0.580  
0.595  
0.620  
–0.002315  
–0.002265  
–0.002183  
If VBE25 = 0.595V, TC = –0.002265V/°C, and  
RZERO = 1k(use 2kpot)  
R1 = 9.717kΩ  
EXAMPLE  
R2 = 33.18kΩ  
Design a temperature measurement system with a 0 to –1.0V  
output for a 0 to 100°C temperature.  
For a 0 to –10V output with a 0 to 100°C temperature:  
RZERO = 1k(use 2kpot)  
R1 = 7.69kΩ  
TMIN = 0°C  
δVO/δT = (–1V – 0V)/(100°C – 0°C) = –0.01V/°C  
R2 = 331.8kΩ  
If VBE25 = 0.595V, TC = –0.002265V/°C, and  
R1= 8.424kΩ  
R2= 28.77kΩ  
4.5V to 36V  
For a 0 to –10V output with a 0 to 100°C temperature:  
R1= 6.667kΩ  
R2= 287.7kΩ  
REF200  
100µA  
100µA  
If independent adjustment of offset and span is required  
consider the circuit shown in Figure 2. In this circuit, a third  
resistor, RZERO is added in series with the temperature-  
sensing diode. System zero (offset) can be adjusted with  
RZERO without affecting span (gain). To trim the circuit adjust  
span first. Either R1 or R2 (or both) can be used to adjust  
span. As with the Figure 1 circuit this circuit has the possible  
disadvantage that the temperature to voltage conversion is  
inverting.  
R2  
A1  
OPA1013  
VO  
Motorola  
MTS102  
RZero  
R1  
The following relationships can be used to calculate nominal  
resistor values for the Figure 2 circuit.  
BASIC TRANSFER FUNCTION  
VO = (VBE + 100µA • RZERO) • (1 + R2/R1) – 100µA • R2  
Where:  
VO = (VBE + 100µA • RZERO) • (1 + R2/R1) – 100µA • R2  
VBE = voltage across diode (V)  
Adjust span first with R1 or R2 then adjust zero with RZERO  
for noninteractive trim.  
CALCULATING RESISTOR VALUES  
Set RZERO = 1k(or use a 2kpot)  
Figure 2. Diode-based Temperature Measurement Circuit  
with Independent Span (gain) and Zero (offset)  
Adjustment.  
(δVO/δT) • (VBE25 + (RZERO • 100µA) + TC • (TMIN – 25°C)) – (TC • V1)  
R1 =  
100µA • ((δVO/δT) – TC)  
2
For a noninverting temperature to voltage conversion, con-  
sider the circuit shown in Figure 3. This circuit is basically  
the same as the Figure 2 circuit except that the amplifier is  
connected to the low side of the diode. With this connection,  
the temperature to voltage conversion is noninverting. As  
before, if adjustment is required, adjust span with R1 or R2  
R1  
RZero  
R2  
first, then adjust zero with RZERO  
.
A1  
OPA1013  
Motorola  
MTS102  
VO  
A disadvantage of the Figure 3 circuit is that it requires a  
negative power supply.  
The following relationships can be used to calculate nominal  
resistor values for the Figure 3 circuit.  
REF200  
100µA  
100µA  
BASIC TRANSFER FUNCTION  
–VS  
VO = (–VBE – 100µA • RZERO) • (1 + R2/R1) + 100µA • R2  
VO = (–VBE – 100µA • RZERO) • (1 + R2/R1) + 100µA • R2  
Where:  
CALCULATING RESISTOR VALUES  
VBE = voltage across diode (V)  
R1 = same as Figure 2  
R2 = same as Figure 2  
Adjust span first with R1 or R2 then adjust zero with RZERO  
for noninteractive trim.  
Where:  
Components = as before  
Figure 3. Positive Transfer Function Temperature Measure-  
ment Circuit with Independent Span (gain) and  
Zero (offset) Adjustment.  
EXAMPLE  
Design a temperature measurement system with a 0 to 1.0V  
output for a 0 to 100°C temperature.  
BASIC TRANSFER FUNCTION  
VO = 100µA • RZERO • (1 + R2/R1) – VBE • R2/R1  
TMIN = 0°C  
CALCULATING RESISTOR VALUES  
δVO/δT = (1V – 0V)/(100°C – 0°C) = 0.01V/°C  
(TC • V1) VO/δT) • (VBE25 + TC • (TMIN – 25°C))  
RZERO  
=
If VBE25 = 0.595V, TC = –0.002265V/°C, and  
100µA • (TC VO/δT))  
RZERO = 1kΩ  
R1 = 9.717kΩ  
R1 = 10k(arbitrary)  
VO/δT)  
R2 = 33.18kΩ  
For a 0 to 10V output with a 0 to 100°C temperature:  
R2 = –R1 • (  
TC  
)
RZERO = 1kΩ  
R1 = 7.69kΩ  
R2 = 331.8kΩ  
Where:  
Components = as before  
For a single-supply noninverting temperature to voltage  
conversion, consider the Figure 4 circuit. This circuit is  
similar to the Figure 2 circuit, except that the temperature-  
sensing diode is connected to the inverting input of the  
amplifier and the offsetting network is connected to the  
noninverting input. To prevent sensor loading, a second  
amplifier is connected as a buffer between the temp sensor  
and the amplifier. If adjustment is required, adjust span with  
EXAMPLE  
Design a temperature measurement system with a 0 to 1.0V  
output for a 0 to 100°C temperature.  
TMIN = 0°C  
δVO/δT = (1V – 0V)/(100°C – 0°C) = 0.01V/°C  
R1 or R2 first, then adjust zero with RZERO  
.
If VBE25 = 0.595V, TC = –0.002265V/°C, and  
RZERO = 5.313kΩ  
The following relationships can be used to calculate nominal  
resistor values for the Figure 4 circuit.  
R1= 10.0kΩ  
R2= 44.15kΩ  
3
For a 0 to 10V output with a 0 to 100°C temperature:  
The following relationships can be used to calculate nominal  
resistor values for the Figure 5 circuit.  
RZERO = 6.372kΩ  
R1 = 10.0kΩ  
BASIC TRANSFER FUNCTION  
R2 = 441.5kΩ  
VO = ((VBE2 + 100µA • RZERO2) – (VBE1 + 100µA • RZERO1)) • GAIN  
4.5V to 36V  
Where:  
GAIN = 2 + 2 • R1/RSPAN  
REF200  
CALCULATING RESISTOR VALUES  
100µA  
100µA  
–2 • R1 • TC  
RSPAN  
=
(δVO/δT) + 2 • TC  
A1  
OPA1013  
RZERO1 = RZERO2 = 500(use 1kpot for RZERO  
)
R1  
R2  
Where:  
A2  
VO  
OPA1013  
RSPAN = Span (gain) adjust resistor []  
Others = as before  
RZERO  
Motorola  
MTS102  
EXAMPLE  
Design a temperature measurement system with a 0 to 1.0V  
output for a 0 to 1°C temperature differential.  
VO = 100µA • RZER O • (1 + R2/R1) – VBE • R2/R1  
TMIN = 0°C  
Where:  
VBE = voltage across diode [V]  
δVO/δT = (1V – 0V)/(1°C – 0°C) = 1.0V/°C  
If VBE25 = 0.595V, TC = –0.002265V/°C, and  
RZERO = 1kpot  
Adjust span first with R1 or R2 then adjust zero  
with RZERO for noninteractive trim.  
Figure 4. Single-supply Positive Transfer Function Tempera-  
ture Measurement Circuit with Independent Span  
(gain) and Zero (offset) Adjustment.  
R1, R2, R3, R4 = 100k, 1%  
RSPAN = 455Ω  
For differential temperature measurement, use the circuit  
shown in Figure 5. In this circuit, the differential output  
between two temperature sensing diodes is amplified by a  
two-op-amp instrumentation amplifier (IA). The IA is formed  
from the two op amps in a dual OPA1013 and resistors R1,  
R2, R3, R4, and RSPAN. RSPAN sets the gain of the IA. For good  
common-mode rejection, R1, R2, R3, and R4 must be matched.  
If 1% resistors are used, CMR will be greater than 70dB for  
gains over 50V/V. Span and zero can be adjusted in any  
order in this circuit.  
For a 0 to 10V output with a 0 to 1°C temperature differen-  
tial:  
RZERO = 1kpot  
R1, R2, R3, R4 = 100k, 1%  
RSPAN = 45.3Ω  
4
4.5V to 36V  
REF200  
RSPAN  
100µA  
100µA  
R1  
100kΩ  
R2  
100kΩ  
R3  
R4  
100kΩ  
100kΩ  
A1  
OPA1013  
A2  
VO  
OPA1013  
Motorola  
MTS102  
Motorola  
MTS102  
VO = ((VBE2 + 100µA • RZERO2) – (VBE1 • + 100µA • RZERO1)) • GAIN  
GAIN = 2 + 2 • R1/RSPAN  
RZERO  
Adjust zero and span in any order.  
Figure 5. Differential Temperature Measurement Circuit.  
5

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