75GB170DN2 [ETC]
IGBT Module ; IGBT模块\n型号: | 75GB170DN2 |
厂家: | ETC |
描述: | IGBT Module
|
文件: | 总9页 (文件大小:241K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BSM 75 GB 170 DN2
IGBT Power Module
• Half-bridge
• Including fast free-wheeling diodes
• Package with insulated metal base plate
• R
= 22 Ohm
G on,min
Type
V
I
Package
Ordering Code
CE
C
BSM 75 GB 170 DN2
1700V 110A HALF-BRIDGE 1
C67070-A2702-A67
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
Collector-gate voltage
V
V
1700
V
CE
CGR
R
= 20 kW
1700
± 20
GE
Gate-emitter voltage
DC collector current
V
GE
I
A
C
T = 25 °C
110
75
C
T = 80 °C
C
Pulsed collector current, t = 1 ms
I
p
Cpuls
T = 25 °C
220
150
C
T = 80 °C
C
Power dissipation per IGBT
P
W
tot
T = 25 °C
625
C
Chip temperature
T
T
+ 150
°C
j
Storage temperature
-40 ... + 125
stg
£
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage, t = 1min.
Creepage distance
R
R
0.2
K/W
thJC
thJC
is
£
0.63
D
V
-
4000
Vac
mm
16
Clearance
-
11
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
-
F
sec
-
40 / 125 / 56
1
Oct-27-1997
BSM 75 GB 170 DN2
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Values
typ.
Unit
min.
max.
Static Characteristics
Gate threshold voltage
V
V
V
GE(th)
V
= V
I = 5 mA
4.8
5.5
6.2
GE
CE, C
Collector-emitter saturation voltage
CE(sat)
V
V
= 15 V, I = 75 A, T = 25 °C
-
-
3.4
4.6
3.9
5.3
GE
GE
C
j
= 15 V, I = 75 A, T = 125 °C
C
j
Zero gate voltage collector current
I
mA
nA
CES
V
V
= 1700 V, V = 0 V, T = 25 °C
-
-
0.5
2
0.75
-
CE
CE
GE
j
= 1700 V, V = 0 V, T = 125 °C
GE
j
Gate-emitter leakage current
= 20 V, V = 0 V
I
GES
V
-
-
400
GE
CE
AC Characteristics
Transconductance
g
S
fs
V
= 20 V, I = 75 A
27
-
-
-
-
-
CE
C
Input capacitance
= 25 V, V = 0 V, f = 1 MHz
C
nF
iss
V
-
-
-
11
1
CE
GE
Output capacitance
= 25 V, V = 0 V, f = 1 MHz
C
C
oss
rss
V
CE
GE
Reverse transfer capacitance
= 25 V, V = 0 V, f = 1 MHz
V
0.28
CE
GE
2
Oct-27-1997
BSM 75 GB 170 DN2
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Values
typ.
Unit
min.
max.
Switching Characteristics, Inductive Load at T = 125 °C
j
Turn-on delay time
= 1200 V, V = 15 V, I = 75 A
t
ns
d(on)
V
CC
GE
C
W
R
= 22
-
-
-
-
400
150
650
90
800
300
1000
140
Gon
Rise time
= 1200 V, V = 15 V, I = 75 A
t
r
V
CC
GE
C
W
= 22
R
Gon
Turn-off delay time
= 1200 V, V = -15 V, I = 75 A
t
d(off)
V
CC
GE
C
W
= 22
R
Goff
Fall time
= 1200 V, V = -15 V, I = 75 A
t
f
V
CC
GE
C
W
= 22
R
Goff
Free-Wheel Diode
Diode forward voltage
V
V
F
I = 75 A, V = 0 V, T = 25 °C
-
-
2.3
2.1
2.8
-
F
GE
j
I = 75 A, V = 0 V, T = 125 °C
F
GE
j
Reverse recovery time
I = 75 A, V = -1200 V, V = 0 V
t
µs
µC
rr
F
R
GE
di /dt = -800 A/µs, T = 125 °C
-
0.3
-
F
j
Reverse recovery charge
I = 75 A, V = -1200 V, V = 0 V
Q
rr
F
R
GE
di /dt = -800 A/µs
F
T = 25 °C
-
-
7
-
-
j
T = 125 °C
21
j
3
Oct-27-1997
BSM 75 GB 170 DN2
Power dissipation
Safe operating area
I = ¦ (V
P
= ¦ (T )
)
CE
tot
C
C
parameter: T £ 150 °C
parameter: D = 0, T = 25°C , T £ 150 °C
C j
j
10 3
650
W
A
t
= 800.0ns
1 µs
p
550
Ptot
IC
10 2
10 1
10 0
10 -1
500
450
400
350
300
250
200
150
100
10 µs
100 µs
1 ms
10 ms
DC
50
0
0
20
40
60
80
100 120 °C
160
10 0
10 1
10 2
10 3
V
TC
VCE
Collector current
I = (T )
Transient thermal impedance IGBT
= (t )
Z
¦
¦
p
C
C
th JC
parameter: V
15 V , T 150 °C
parameter: D = t / T
³
£
GE
j
p
10 0
120
A
K/W
100
IC
ZthJC
90
10 -1
80
70
60
50
40
30
20
D = 0.50
0.20
10 -2
0.10
0.05
0.02
0.01
single pulse
10
0
10 -3
10 -5
0
20
40
60
80
100 120 °C
160
10 -4
10 -3
10 -2
10 -1 s 10 0
TC
tp
4
Oct-27-1997
BSM 75 GB 170 DN2
Typ. output characteristics
Typ. output characteristics
I = f (V
I = f (V
)
)
CE
C
CE
C
parameter: t = 80 µs, T = 25 °C
parameter: t = 80 µs, T = 125 °C
p
j
p
j
150
A
150
A
130
120
110
100
90
130
120
110
100
90
17V
15V
13V
11V
9V
17V
15V
13V
11V
9V
IC
IC
7V
7V
80
80
70
70
60
60
50
50
40
40
30
30
20
20
10
0
10
0
0.0
1.0
2.0
3.0
4.0
V
6.0
0.0
1.0
2.0
3.0
4.0
V
6.0
VCE
VCE
Typ. transfer characteristics
I = f (V
)
GE
C
parameter: t = 80 µs, V = 20 V
p
CE
300
A
260
240
220
200
180
160
140
120
100
80
IC
60
40
20
0
0
2
4
6
8
10
V
VGE
14
5
Oct-27-1997
BSM 75 GB 170 DN2
Typ. capacitances
Typ. gate charge
C = f (V )
V
= ¦ (Q
)
CE
GE
Gate
parameter: I
= 75 A
parameter: V = 0, f = 1 MHz
C puls
GE
10 2
20
V
nF
16
C
VGE
800 V
1200 V
14
12
10
8
10 1
Ciss
10 0
Coss
Crss
6
4
2
0
10 -1
0.0
0.2
0.4
0.6
0.8
µC
QGate
1.1
0
5
10
15
20
25
30
V
VCE
40
Reverse biased safe operating area
= f(V T = 150°C
Short circuit safe operating area
I = f(V ) , T = 150°C
Csc
I
)
,
Cpuls
CE
j
CE
j
parameter: VGE = ± 15 V, tp £ 1 ms, L < 50 nH
parameter: VGE = ± 15 V, tp £ 10 µs, L < 50 nH
2.5
12
ICpuls C
I
ICsc/IC
di/dt =
700A/µs
1500A/µs
2600A/µs
di/dt = 700A/µs
1500A/µs
8
6
4
2600A/µs
1.5
1.0
° allowed numbers of
short circuit: <1000
° time between short
circuit: >1s
0.5
0.0
2
0
0
200 400 600 800 1000 1200 1400
V
VCE
1800
0
200 400 600 800 1000 1200 1400
V
VCE
1800
6
Oct-27-1997
BSM 75 GB 170 DN2
Typ. switching time
Typ. switching time
I = f (I ) , inductive load , T = 125°C
t = f (R ) , inductive load , T = 125°C
C
j
G
j
par.: V = 1200 V, V = ± 15 V, R = 22
par.: V = 1200 V, V = ± 15 V, I = 75 A
W
CE
10 4
GE
G
CE
10 4
GE
C
ns
ns
t
t
tdoff
10 3
10 3
tdoff
tdon
tdon
tr
tr
10 2
10 2
tf
tf
10 1
10 1
0
20 40 60 80 100 120 140
A
IC
180
0
20
40
60
80
120
W
RG
Typ. switching losses
E = f (I ) , inductive load , T = 125°C
Typ. switching losses
E = f (R ) , inductive load , T = 125°C
C
j
G
j
par.: V = 1200 V, V = ± 15 V, R = 22 W
par.: V = 1200 V, V = ± 15 V, I = 75 A
CE
GE
G
CE
GE
C
200
200
mWs
160
140
120
100
80
mWs
160
140
120
100
80
Eon
Eon
E
E
60
60
Eoff
40
40
Eoff
20
0
20
0
0
20 40 60 80 100 120 140
A
IC
180
0
20
40
60
80
120
W
RG
7
Oct-27-1997
BSM 75 GB 170 DN2
Forward characteristics of fast recovery
Transient thermal impedance Diode
= ¦ (t )
reverse diode
I = f(V )
Z
F
F
th JC
p
parameter: D = t / T
parameter: T
p
j
10 0
150
A
K/W
Tj=125°C
130
Tj=25°C
IF
120
110
100
90
ZthJC
10 -1
80
10 -2
D = 0.50
0.20
70
60
0.10
50
0.05
single pulse
40
10 -3
0.02
30
0.01
20
10
0
10 -4
10 -5
0.0
0.5
1.0
1.5
2.0
2.5
V
3.5
10 -4
10 -3
10 -2
10 -1 s 10 0
VF
tp
8
Oct-27-1997
BSM 75 GB 170 DN2
Circuit Diagram
Package Outlines
Dimensions in mm
Weight: 250 g
9
Oct-27-1997
相关型号:
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