74HCT1G14GW/T1 [ETC]
IC-SM-CMOS LOGIC ; IC- SM- CMOS逻辑\n
| 型号： | 74HCT1G14GW/T1 |
| 厂家： | 
ETC |
| 描述： | IC-SM-CMOS LOGIC
|
| 文件： | 总16页 (文件大小：86K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
DATA SHEET
74HC1G14; 74HCT1G14
Inverting Schmitt-trigger
1998 Aug 05
Product specification
File under Integrated Circuits, IC06
Philips Semiconductors
Product specification
Inverting Schmitt-trigger
74HC1G14; 74HCT1G14
FEATURES
QUICK REFERENCE DATA
GND = 0 V; Tamb = 25 °C; tr = tf = 6.0 ns.
• Wide operating voltage range:
2.0 to 6.0 V
TYP.
SYMBOL
tPHL/tPLH
CI
PARAMETER
CONDITIONS
UNIT
ns
• Symmetrical output impedance
• High noise immunity
HC1G HCT1G
propagation
delay inA to outY VCC = 5 V
CL = 15 pF
10
1.5
20
15
1.5
22
• Low power dissipation
• Balanced propagation delays
• Very small 5 pins package
• Applications
input
capacitance
pF
pF
CPD
power
notes 1 and 2
dissipation
capacitance
– Wave and pulse shapers
– Astable multivibrators
– Monostable multivibrators
• Output capability: standard.
Notes
1. CPD is used to determine the dynamic power dissipation (PD in µW).
PD = CPD × VCC2 × fi + ∑ (CL × VCC2 × fo) where:
fi = input frequency in MHz;
DESCRIPTION
fo = output frequency in MHz;
The 74HC1G/HCT1G14 is a
high-speed Si-gate CMOS device.
CL = output load capacitance in pF;
VCC = supply voltage in V;
∑ (CL × VCC2 × fo) = sum of outputs.
The 74HC1G/HCT1G14 provides the
inverting buffer function with
Schmitt-trigger action. These devices
are capable of transforming slowly
changing input signals into sharply
defined, jitter-free output signals.
2. For HC1G the condition is VI = GND to VCC.
For HCT1G the condition is VI = GND to VCC − 1.5 V.
PINNING
The standard output currents are 1⁄2
PIN
SYMBOL
DESCRIPTION
compared to the 74HC/HCT14.
1
2
3
4
5
n.c.
not connected
data input
FUNCTION TABLE
inA
See note 1.
GND
outY
VCC
ground (0 V)
data output
INPUT
inA
OUTPUT
outY
DC supply voltage
L
H
L
H
Note
1. H = HIGH voltage level;
L = LOW voltage level.
1998 Aug 05
2
Philips Semiconductors
Product specification
Inverting Schmitt-trigger
74HC1G14; 74HCT1G14
ORDERING AND PACKAGE INFORMATION
OUTSIDE NORTH
PACKAGES
TEMPERATURE
AMERICA
PINS
PACKAGE
MATERIAL
CODE
MARKING
RANGE
74HC1G14GW
−40 to +125 °C
74HCT1G14GW
5
5
SC-88A
SC-88A
plastic
plastic
SOT353
SOT353
HF
TF
handbook, halfpage
n.c
inA
1
2
3
5
4
V
CC
handbook, halfpage
inA
2
outY
4
14
outY
GND
MNA023
MNA022
Fig.1 Pin configuration.
Fig.2 Logic symbol.
handbook, halfpage
handbook, halfpage
inA
2
4
outY
MNA025
MNA024
Fig.3 IEC logic symbol.
Fig.4 Logic diagram.
1998 Aug 05
3
Philips Semiconductors
Product specification
Inverting Schmitt-trigger
74HC1G14; 74HCT1G14
RECOMMENDED OPERATING CONDITIONS
74HC1G
74HCT1G
SYMBOL
PARAMETER
UNIT
CONDITIONS
MIN. TYP. MAX. MIN. TYP. MAX.
VCC
VI
DC supply voltage
input voltage
2.0
0
5.0
−
6.0
4.5
0
5.0
−
5.5
V
V
V
VCC
VCC
VCC
VCC
VO
output voltage
0
−
0
−
Tamb
operating ambient
temperature range
−40
+25
+125 −40
+25
+125 °C
see DC and AC
characteristics per device
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134); voltages are referenced to GND (ground = 0 V).
SYMBOL
PARAMETER
DC supply voltage
CONDITIONS
MIN.
−0.5
MAX. UNIT
VCC
±IIK
±IOK
±IO
+7.0
V
DC input diode current
DC output diode current
VI < −0.5 or VI > VCC + 0.5 V; note 1
−
−
−
20
mA
mA
mA
V
O < −0.5 or VO > VCC + 0.5 V; note 1
20
DC output source or sink
current standard outputs
−0.5 V < VO < VCC + 0.5 V; note 1
12.5
±ICC
DC VCC or GND current for
types with standard outputs
note 1
−
25
mA
Tstg
PD
storage temperature range
−65
+150
°C
power dissipation per package for temperature range: −40 to +125 °C
5 pins plastic SC-88A
above +55 °C derate linearly with
−
200
mW
2.5 mW/K
Note
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
1998 Aug 05
4
Philips Semiconductors
Product specification
Inverting Schmitt-trigger
74HC1G14; 74HCT1G14
DC CHARACTERISTICS FOR THE 74HC1G
Over recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Tamb (°C)
TEST CONDITIONS
SYMBOL
PARAMETER
−40 to +85
−40 to +125
MIN. MAX.
1.9
UNIT
VCC (V)
OTHER
MIN. TYP.(1) MAX.
VOH
HIGH-level output
voltage; all outputs
1.9
4.4
2.0
4.5
−
−
−
−
−
V
V
V
V
2.0
4.5
6.0
4.5
VI = VIH or VIL;
−IO = 20 µA
4.4
5.9
3.7
−
−
−
5.9
6.0
VOH
HIGH-level output
voltage; standard
outputs
4.13
4.32
VI = VIH or VIL;
−IO = 2.0 mA
5.63
5.81
−
5.2
−
V
6.0
VI = VIH or VIL;
−IO = 2.6 mA
VOL
LOW-level output
voltage; all outputs
−
−
−
−
0
0.1
0.1
−
−
−
−
0.1
0.1
0.1
0.4
V
V
V
V
2.0
4.5
6.0
4.5
VI = VIH or VIL;
IO = 20 µA
0
0
0.1
VOL
LOW-level output
voltage; standard
outputs
0.15
0.33
VI = VIH or VIL;
IO = 2.0 mA
−
0.16
0.33
−
0.4
V
6.0
VI = VIH or VIL;
IO = 2.6 mA
II
input leakage current
−
−
−
−
1.0
10
−
−
1.0
20
µA
µA
6.0
6.0
VI = VCC or GND
ICC
quiescent supply
current
VI = VCC or GND;
IO = 0
Note
1. All typical values are measured at Tamb = 25 °C.
DC CHARACTERISTICS FOR THE 74HC1G14
Voltages are referenced to GND (ground = 0 V).
T
amb (°C)
TEST CONDITIONS
SYMBOL
PARAMETER
−40 to +85
−40 to +125
MIN. MAX.
0.7 1.5
UNIT
VCC (V) WAVEFORMS
MIN. TYP.(1) MAX.
VT+
positive-going threshold
0.7
1.7
2.1
1.09
2.36
3.12
0.60
1.53
2.08
0.48
0.83
1.04
1.5
3.15
4.2
0.9
2.0
2.6
1.0
1.4
1.6
V
V
V
V
V
V
V
V
V
2.0
4.5
6.0
2.0
4.5
6.0
2.0
4.5
6.0
see Figs 5 and 6
see Figs 5 and 6
see Figs 5 and 6
1.7
2.1
0.3
0.9
1.2
0.2
0.4
0.6
3.15
4.2
0.9
2.0
2.6
1.0
1.4
1.6
VT−
negative-going threshold 0.3
0.9
1.2
VH
hysteresis (VT+ − VT−)
0.2
0.4
0.6
Note
1. All typical values are measured at Tamb = 25 °C.
1998 Aug 05
5
Philips Semiconductors
Product specification
Inverting Schmitt-trigger
74HC1G14; 74HCT1G14
DC CHARACTERISTICS FOR THE 74HCT1G
Over recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Tamb (°C)
TEST CONDITIONS
SYMBOL
PARAMETER
−40 to +85
−40 to +125
UNIT
VCC (V)
OTHER
MIN.
4.4
TYP.(1) MAX. MIN. MAX.
VOH
VOH
HIGH-level output
voltage; all outputs
4.5
−
−
4.4
3.7
−
−
V
V
4.5
4.5
VI = VIH or VIL;
−IO = 20 µA
HIGH-level output
voltage; standard
outputs
4.13
4.32
VI = VIH or VIL;
−IO = 2.0 mA
VOL
VOL
LOW-level output
voltage; all outputs
−
−
0
0.1
−
−
0.1
0.4
V
V
4.5
4.5
VI = VIH or VIL;
IO = 20 µA
LOW-level output
voltage; standard
outputs
0.15
0.33
VI = VIH or VIL;
IO = 2.0 mA
II
input leakage current −
−
−
1.0
−
−
1.0
µA
µA
5.5
5.5
VI = VCC or GND
ICC
quiescent supply
current
−
10.0
20.0
VI = VCC or GND;
IO = 0
∆ICC
additional supply
current per input
−
−
500
−
850
µA
4.5 to 5.5 VI = VCC − 2.1 V;
IO = 0
Note
1. All typical values are measured at Tamb = 25 °C.
DC CHARACTERISTICS FOR THE 74HCT1G14
Voltages are referenced to GND (ground = 0 V).
Tamb (°C)
−40 to +85
MIN. TYP.(1) MAX.
TEST CONDITIONS
SYMBOL
PARAMETER
−40 to +125
UNIT
V
CC (V) WAVEFORMS
MIN.
1.2
MAX.
VT+
VT−
VH
positive-going threshold
1.2
1.4
1.55
1.80
0.76
0.90
0.80
0.90
1.9
2.1
1.2
1.4
−
1.9
2.1
1.2
1.4
−
V
V
V
V
V
V
4.5
5.5
4.5
5.5
4.5
5.5
see Figs 5 and 6
see Figs 5 and 6
see Figs 5 and 6
1.4
0.5
0.6
0.4
0.4
negative-going threshold 0.5
0.6
hysteresis (VT+ − VT−)
0.4
0.4
−
−
Note
1. All typical values are measured at Tamb = 25 °C.
1998 Aug 05
6
Philips Semiconductors
Product specification
Inverting Schmitt-trigger
74HC1G14; 74HCT1G14
AC CHARACTERISTICS FOR 74HC1G14
GND = 0 V; tr = tf = 6.0 ns; CL = 50 pF.
T
amb (°C)
−40 to +85
MIN. TYP.(1) MAX.
TEST CONDITIONS
UNIT
SYMBOL
PARAMETER
−40 to +125
VCC (V)
WAVEFORMS
MIN.
MAX.
tPHL/tPLH
propagation delay
inA to outY
−
−
−
25
12
11
155
31
−
190
38
ns
ns
ns
2.0
4.5
6.0
see Figs 12 and 13
−
−
26
32
Note
1. All typical values are measured at Tamb = 25 °C.
AC CHARACTERISTICS FOR 74HCT1G14
GND = 0 V; tr = tf = 6.0 ns; CL = 50 pF.
T
amb (°C)
TEST CONDITIONS
SYMBOL
PARAMETER
−40 to +85
−40 to +125
UNIT
VCC(V)
4.5
WAFEFORMS
MIN. TYP.(1) MAX. MIN. MAX.
17 43 51
t
PHL/tPLH
propagation delay
inA to outY
−
−
ns
see Figs 12 and 13
Note
1. All typical values are measured at Tamb = 25 °C.
1998 Aug 05
7
Philips Semiconductors
Product specification
Inverting Schmitt-trigger
74HC1G14; 74HCT1G14
TRANSFER CHARACTERISTIC WAVEFORMS
handbook, halfpage
handbook, halfpage
V
T+
V
O
V
I
V
H
V
T−
V
O
MNA027
V
H
V
V
T−
T+
MNA026
Fig.6 The definitions of VT+, VT− and VH; where
VT+ and VT− are between limits of 20% and
70%.
Fig.5 Transfer characteristic.
MNA028
MNA029
100
1.0
handbook, halfpage
handbook, halfpage
I
CC
(mA)
I
CC
0.8
(µA)
0.6
0.4
0.2
0
50
0
0
1.0
2.0
0
2.5
5.0
V (V)
I
V (V)
I
Fig.7 Typical HC1G14 transfer characteristics;
VCC = 2.0 V.
Fig.8 Typical HC1G14 transfer characteristics;
VCC = 4.5 V.
1998 Aug 05
8
Philips Semiconductors
Product specification
Inverting Schmitt-trigger
74HC1G14; 74HCT1G14
MNA031
MNA030
2.0
1.6
handbook, halfpage
handbook, halfpage
I
I
CC
CC
(mA)
(mA)
1.0
0.8
0
0
0
2.5
5.0
0
3.0
6.0
V (V)
V (V)
I
I
Fig.9 Typical HC1G14 transfer characteristics;
VCC = 6.0 V.
Fig.10 Typical HCT1G14 transfer characteristics;
VCC = 4.5 V.
MNA032
3.0
handbook, halfpage
I
CC
handbook, halfpage
(1)
(mA)
V
inA INPUT
M
2.0
t
t
PHL
PLH
(1)
outY OUTPUT
V
M
1.0
MNA033
0
0
3.0
6.0
V (V)
I
(1) HC1G: VM = 50%; VI = GND to VCC
.
HCT1G: VM = 1.3 V; VI = GND to 3.0 V.
Fig.11 Typical HCT1G14 transfer characteristics;
VCC = 5.5 V.
Fig.12 The input (inA) to output (outY) propagation
delays.
1998 Aug 05
9
Philips Semiconductors
Product specification
Inverting Schmitt-trigger
74HC1G14; 74HCT1G14
V
handbook, halfpage
CC
V
V
O
I
PULSE
GENERATOR
D.U.T.
C
50 pF
R
L
T
MNA034
Definitions for test circuit:
C
L = load capacitance including jig and probe capacitance (See “AC characteristics for 74HC1G14”
and “AC characteristics for 74HCT1G14” for values).
RT = termination resistance should be equal to the output impedance Zo of the pulse generator.
Fig.13 Load circuitry for switching times.
1998 Aug 05
10
Philips Semiconductors
Product specification
Inverting Schmitt-trigger
74HC1G14; 74HCT1G14
APPLICATION INFORMATION
The slow input rise and fall times cause additional power
dissipation, this can be calculated using the following
formula:
MNA036
200
handbook, halfpage
average
Pad = fi × (tr × ICCa + tf × ICCa) × VCC
I
CC
(µA)
150
Where:
Pad = additional power dissipation (µW)
fi = input frequency (MHz)
positive-going
edge
100
50
tr = input rise time (ns); 10% to 90%
tf = input fall time (ns); 90% to 10%
ICCa = average additional supply current (µA).
Average ICCa differs with positive or negative input
transitions, as shown in Fig.14 and Fig.15.
negative-going
edge
HC1G/HCT1G14 used in relaxation oscillator circuit,
see Fig.14 and Fig.16.
0
0
2.0
4.0
6.0
V
(V)
CC
Note to the application information:
1. All values given are typical unless otherwise specified.
Fig.14 Average ICC for HC1G Schmitt-trigger
devices; linear change of VI between
0.1VCC to 0.9VCC
.
MNA058
200
handbook, halfpage
average
I
CC
(µA)
R
handbook, halfpage
150
positive-going
edge
100
C
MNA035
negative-going
50
edge
1
T
1
0
For HC1G: f = --- ≈ -----------------------
0.8 × RC
0
2
4
6
V
(V)
CC
1
T
1
For HCT1G: f = --- ≈ --------------------------
0.67 × RC
Fig.15 Average ICC for HCT1G Schmitt-trigger
devices; linear change of VI between
Fig.16 Relaxation oscillator using the
HC1G/HCT1G14.
0.1VCC to 0.9VCC
.
1998 Aug 05
11
Philips Semiconductors
Product specification
Inverting Schmitt-trigger
74HC1G14; 74HCT1G14
PACKAGE OUTLINE
Plastic surface mounted package; 5 leads
SOT353
D
B
E
A
X
y
H
v
M
A
E
5
4
Q
A
A
1
1
2
3
c
e
b
p
L
p
w
M B
1
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
(2)
UNIT
A
b
c
D
E
e
e
H
L
Q
v
w
y
p
p
1
E
max
0.30
0.20
1.1
0.8
0.25
0.10
2.2
1.8
1.35
1.15
2.2
2.0
0.45
0.15
0.25
0.15
mm
0.1
1.3
0.65
0.2
0.2
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
SC-88A
97-02-28
SOT353
1998 Aug 05
12
Philips Semiconductors
Product specification
Inverting Schmitt-trigger
74HC1G14; 74HCT1G14
SOLDERING
Introduction
Wave soldering
Wave soldering techniques can be used for all SO
packages if the following conditions are observed:
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering
technique should be used.
• The longitudinal axis of the package footprint must be
parallel to the solder flow.
• The package footprint must incorporate solder thieves at
the downstream end.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “Data Handbook IC26; Integrated Circuit Packages”
(order code 9398 652 90011).
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Reflow soldering
Reflow soldering techniques are suitable for all SO
packages.
Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
6 seconds. Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.
Repairing soldered joints
Fix the component by first soldering two diagonally-
opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.
Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.
1998 Aug 05
13
Philips Semiconductors
Product specification
Inverting Schmitt-trigger
74HC1G14; 74HCT1G14
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Aug 05
14
Philips Semiconductors
Product specification
Inverting Schmitt-trigger
74HC1G14; 74HCT1G14
NOTES
1998 Aug 05
15
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Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615800, Fax. +358 9 61580920
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. +27 11 470 5911, Fax. +27 11 470 5494
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,
Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427
South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 23 53 60, Fax. +49 40 23 536 300
Tel. +55 11 821 2333, Fax. +55 11 821 2382
Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,
Spain: Balmes 22, 08007 BARCELONA,
Tel. +30 1 4894 339/239, Fax. +30 1 4814 240
Tel. +34 93 301 6312, Fax. +34 93 301 4107
Hungary: see Austria
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745
India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. +91 22 493 8541, Fax. +91 22 493 0966
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2741 Fax. +41 1 488 3263
Indonesia: PT Philips Development Corporation, Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Tel. +90 212 279 2770, Fax. +90 212 282 6707
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Tel. +1 800 234 7381
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Uruguay: see South America
Vietnam: see Singapore
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 625 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors,
Internet: http://www.semiconductors.philips.com
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
© Philips Electronics N.V. 1998
SCA60
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
245106/00/01/pp16
Date of release: 1998 Aug 05
Document order number: 9397 750 03652
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