5962F9467602V9A [ETC]
Operational Amplifier ; 运算放大器\n
| 型号： | 5962F9467602V9A |
| 厂家： | 
ETC |
| 描述： | Operational Amplifier
|
| 文件： | 总24页 (文件大小：122K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
REVISIONS
LTR
A
DESCRIPTION
DATE (YR-MO-DA)
94-10-28
APPROVED
M.A. Frye
Make change to TABLE I in accordance with N.O.R. 5962-R012-95.
B
C
D
Add device type 02. Change boilerplate to radiation hardened format. Make
changes to 1.2, 1.2.2, 1.4, TABLE I, Figure 1, and Figure 4.
96-01-31
99-07-09
00-07-17
M.A. Frye
Ray Monnin
Ray Monnin
Change ratings values under 1.3 and added 1.5. Editorial changes throughout.
-lgt
Add appendix A to specify die requirements. -rrp
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PREPARED BY
Greg A. Pitz
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216
CHECKED BY
Rajesh R. Pithadia
STANDARD
MICROCIRCUIT
DRAWING
MICROCIRCUIT, LINEAR, CURRENT FEEDBACK
AMPLIFIER, ULTRA HIGH SPEED, MONOLITHIC
SILICON
APPROVED BY
Michael A. Frye
THIS DRAWING IS AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
DRAWING APPROVAL DATE
94-08-04
AMSC N/A
REVISION LEVEL
D
SIZE
A
CAGE CODE
5962-94676
67268
SHEET
1
OF
23
DSCC FORM 2233
APR 97
5962-E440-00
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
1. SCOPE
1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and
M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the
Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the
PIN.
1.2 PIN. The PIN is as shown in the following example:
5962
-
94676
01
M
P
A
Federal
RHA
designator
(see 1.2.1)
Device
type
(see 1.2.2)
Device
class
designator
(see 1.2.3)
Case
outline
(see 1.2.4)
Lead
finish
(see 1.2.5)
stock class
designator
\
/
\/
Drawing number
1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and
are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A
specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.
1.2.2 Device type(s). The device type(s) identify the circuit function as follows:
Device type
Generic number
HFA1100
Circuit function
01
02
Ultra high speed current feedback amplifier
HS1100RH
Radiation hardened, ultra high speed
current feedback amplifier
1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as
follows:
Device class
M
Device requirements documentation
Vendor self-certification to the requirements for MIL-STD-883 compliant,
non-JAN class level B microcircuits in accordance with MIL-PRF-38535,
appendix A
Q or V
Certification and qualification to MIL-PRF-38535
1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:
Outline letter
P
Descriptive designator
GDIP1-T8 or CDIP2-T8
Terminals
8
Package style
Dual-in-line
1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535,
appendix A for device class M.
SIZE
STANDARD
5962-94676
A
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
REVISION LEVEL
D
SHEET
2
DSCC FORM 2234
APR 97
1.3 Absolute maximum ratings. 1/
Voltage between +VS and -VS..................................................................................... 12 V dc
Differential input voltage............................................................................................. 5 V dc
Voltage at either input terminal................................................................................... +VS and -VS
Output current (50% duty cycle)................................................................................. 55 mA
Maximum package power dissipation at TA = +125 C (PD) ........................................ 0.44 W 2/
Junction temperature (TJ)........................................................................................... +175 C
Storage temperature range (TSTG).............................................................................. -65 C to +150 C
Lead temperature (soldering, 10 seconds)................................................................. +300 C
Thermal resistance, junction-to-case ( JC) ................................................................. 30 C/W
Thermal resistance, junction-to-ambient JA).............................................................. 115 C/W
1.4 Recommended operating conditions.
Operating supply voltage ( VS).................................................................................. 5 V
Load resistance (RL)................................................................................................... 50
Ambient operating temperature range (TA)................................................................. -55 C to +125 C
1.5 Radiation features.
Maximum total dose available (dose rate = 50-300 rads (Si)/s) ..... 300 Krads (Si)
Neutron .......................................................................................... 3/
Latch-up ........................................................................................ None 4/
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a
part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in
the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the
solicitation.
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
STANDARDS
DEPARTMENT OF DEFENSE
MIL-STD-883
MIL-STD-973
-
-
Test Method Standard Microcircuits.
Configuration Management.
MIL-STD-1835 - Interface Standard For Microcircuit Case Outlines.
HANDBOOKS
DEPARTMENT OF DEFENSE
MIL-HDBK-103 - List of Standard Microcircuit Drawings (SMD's).
MIL-HDBK-780 - Standard Microcircuit Drawings.
(Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the Standardization
Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
_______
1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the
maximum levels may degrade performance and affect reliability.
2/ If device power exceeds package dissipation capability, provide heat sinking or derate linearly. The derating is based on
at the following rate of 8.7 mW/ C.
JA
3/ Value is to be specified when testing is completed.
4/ Not required by this technology.
SIZE
STANDARD
5962-94676
A
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
REVISION LEVEL
D
SHEET
3
DSCC FORM 2234
APR 97
2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text
of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
3. REQUIREMENTS
3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-
38535 and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The modification in
the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M
shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein.
3.1.1 Microcircuit die. For the requirements for microcircuit die, see appendix A to this document.
3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M.
3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.4 herein.
3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.
3.2.3 Test circuits and waveforms. The test circuits and waveforms shall be as specified on figure 2.
3.2.4 Irradiation circuit. The irradiation circuit shall be as specified on figure 3.
3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full
ambient operating temperature range.
3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical
tests for each subgroup are defined in table I.
3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be
marked as listed in MIL-HDBK-103. For packages where marking of the entire SMD PIN number is not feasible due to space
limitations, the manufacturer has the option of not marking the "5962-" on the device. For RHA product using this option, the
RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535.
Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A.
3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a "QML" or "Q" as required in
MIL-PRF-38535. The compliance mark for device class M shall be a "C" as required in MIL-PRF-38535, appendix A.
3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535
listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of
compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see
6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this
drawing shall affirm that the manufacturer's product meets, for device classes Q and V, the requirements of MIL-PRF-38535
and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein.
3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for
device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing.
3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2
herein) involving devices acquired to this drawing is required for any change as defined in MIL-STD-973.
3.9 Verification and review for device class M. For device class M, DSCC, DSCC’s agent, and the acquiring activity retain
the option to review the manufacturer's facility and applicable required documentation. Offshore documentation shall be made
available onshore at the option of the reviewer.
3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in
microcircuit group number 49 (see MIL-PRF-38535, appendix A).
SIZE
STANDARD
5962-94676
A
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
REVISION LEVEL
D
SHEET
4
DSCC FORM 2234
APR 97
TABLE I. Electrical performance characteristics.
Conditions 1/
Test
Symbol
VIO
Device
type
Group A
subgroups
Limits
Unit
mV
-55 C < TA < +125 C
VS = 5 V
unless otherwise specified
Min Max
Input offset voltage
VCM = 0 V
All
1
2, 3
1
-6
-10
-10
40
6
10
10
M, D, P, L, R, F 2/
02
All
Common mode
rejection
CMRR
PSRRP
PSRRN
1
dB
dB
dB
VCM = 2 V
+V = 3 V, -V = -7 V
+V = 7 V, -V = -3 V
2, 3
38
ratio
M, D, P, L, R, F 2/
02
All
1
1
38
45
42
Power supply rejection
ratio
VS = 1.25 V
+V = 6.25 V, -V = -5 V
+V = 3.75 V, -V = -5 V
2, 3
M, D, P, L, R, F 2/
02
All
1
1
42
45
42
VS = 1.25 V
+V = 5 V, -V = -6.25 V
+V = 5 V, -V = -3.75 V
2, 3
M, D, P, L, R, F 2/
02
All
1
1
42
-40
-65
-65
Non-inverting input
(+IN) current
IBSP
VCM = 0 V
40
65
65
40
50
A
2, 3
1
M, D, P, L, R, F 2/
02
All
+IN current common
mode sensitivity
CMSIBP
1
VCM = 2 V
+V = 3 V, -V = -7 V
+V = 7 V, -V = -3 V
A/V
2, 3
M, D, P, L, R, F 2/
02
All
1
1
50
+IN resistance
+RIN
3/
25
20
k
2, 3
1
Inverting input (-IN)
current
IBSN
VCM = 0 V
All
-50
-75
-75
50
75
75
7
A
2, 3
1
M, D, P, L, R, F 2/
02
All
-IN current common
mode sensitivity
CMSIBN
1
VCM = 2 V
+V = 3 V, -V = -7 V
+V = 7 V, -V = -3 V
A/V
2, 3
10
M, D, P, L, R, F 2/
02
1
10
See footnotes at end of table.
SIZE
STANDARD
5962-94676
A
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
REVISION LEVEL
D
SHEET
5
DSCC FORM 2234
APR 97
TABLE I. Electrical performance characteristics - Continued.
Conditions 1/
Test
Symbol
Device Group A
Limits
Unit
A/V
-55 C < TA < +125 C
VS = 5 V
unless otherwise specified
Type
subgroups
Min
Max
-IN current power
supply sensitivity
PPSSIBN
All
1
15
27
VS = 1.25 V
+V = 6.25 V, -V = -5 V
+V = 3.75 V, -V = -5 V
2, 3
M, D, P, L, R, F 2/
02
All
1
1
27
15
27
NPSSIBN
VS = 1.25 V
+V = 5 V, -V = -6.25 V
+V = 5 V, -V = -3.75 V
2, 3
M, D, P, L, R, F 2/
02
All
1
1
27
Output voltage swing
VIN = -3.5 V, AV = -1
RL = 100
3
V
VOP100
VIN = -3 V, AV = -1
RL = 100
2, 3
1
2.5
2.5
VIN = -3 V, AV = -1
RL = 100
02
All
M, D, P, L, R, F 2/
VON100
VIN = +3.5 V, AV = -1
RL = 100
1
2, 3
1
-3
V
-2.5
-2.5
VIN = +3 V, AV = -1, RL = 100
02
All
02
VIN = +3 V, AV = -1, RL = 100
M, D, P, L, R, F 2/
VOP50
1, 2
3
2.5
1.5
1.5
V
V
VIN = -3 V, AV = -1, RL = 50
VIN = -2.25 V, AV = -1, RL = 50
VIN = -2.25 V, AV = -1
RL = 50
1
M, D, P, L, R, F 2/
VON50
VIN = +3 V, AV = -1
RL = 50
All
02
1, 2
3
-2.5
-1.5
-1.5
VIN = +2.25 V, AV = -1
RL = 50
VIN = +2.25 V, AV = -1
1
RL = 50
M, D, P, L, R, F 2/
Output current
+IOUT
4/
All
All
1, 2
3
50
30
mA
-IOUT
4/
1, 2
3
-50
-30
See footnotes at end of table.
SIZE
STANDARD
5962-94676
A
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
REVISION LEVEL
D
SHEET
6
DSCC FORM 2234
APR 97
TABLE I. Electrical performance characteristics - Continued.
Conditions 1/
Test
Symbol
Device
type
Group A
subgroups
Limits
Unit
mA
-55 C < TA < +125 C
VS = 5 V
Min
Max
unless otherwise specified
Quiescent power supply
current
ICC
All
1
2, 3
1
14
26
33
RL = 100
M, D, P, L, R, F 2/
M, D, P, L, R, F 2/
02
All
33
IEE
1
-26
-33
-33
300
-14
mA
RL = 100
2, 3
1
02
All
-3 dB bandwidth
Gain flatness
Slew rate
BW(-1) AV = -1, VOUT = 200 mVP-P 5/
RF = 430
4
MHz
BW(+1) AV = +1, VOUT = 200 mVP-P 5/
RF = 510
4
4
4
4
4
550
350
BW(+2) AV = +2, VOUT = 200 mVP-P 5/
RF = 360
GF30
All
All
dB
f
30 MHz, AV = +2 5/
0.04
0.10
0.30
VOUT = 200 mVP-P
GF50
f
50 MHz, AV = +2 5/
VOUT = 200 mVP-P
GF100
f
100 MHz, AV = +2 5/
VOUT = 200 mVP-P
+SR(+1) AV = +1, VOUT = 5 VP-P 5/ 6/
-SR(+1) AV = +1, VOUT = 5 VP-P 5/ 6/
4
4
4
1200
1100
1650
V/ s
+SR(+2) AV = +2, VOUT = 5 VP-P 5/ 6/
RF = 360
-SR(+2) AV = +2, VOUT = 5 VP-P 5/ 6/
RF = 360
4
9
9
4
1500
Rise and fall time
Overshoot
tR
AV = +2, 5/ 6/
All
All
1
1
ns
%
VOUT = 0.5 VP-P, RF = 360
tF
AV = +2, 5/ 6/
VOUT = 0.5 VP-P, RF = 360
+OS
AV = +2, 5/ 7/
25
VOUT = 0.5 VP-P, RF = 360
-OS
tS
AV = +2, 5/ 7/
VOUT = 0.5 VP-P, RF = 360
4
9
20
20
Settling time
AV = +2, VOUT = 2 V to 0 V 5/
All
ns
RF = 510
AV = +2, VOUT = 2 V to 0 V 5/
RF = 510 measured at 0.05%
measured at 0.1%
9
33
See footnotes at end of table.
SIZE
STANDARD
5962-94676
A
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
REVISION LEVEL
D
SHEET
7
DSCC FORM 2234
APR 97
TABLE I. Electrical performance characteristics - Continued.
Conditions 1/
Test
Symbol
Device
type
Group A
subgroups
Limits
Min Max
Unit
dBc
-55 C < TA < +125 C
VS = 5 V
unless otherwise specified
2nd harmonic distortion
HD2
f = 30 MHz, AV = +2 5/
VOUT = 2 VP-P, RF = 360
All
4
4
4
4
4
4
-48
-45
-35
-65
-60
-40
f = 50 MHz, AV = +2 5/
VOUT = 2 VP-P, RF = 360
f = 100 MHz, AV = +2 5/
VOUT = 2 VP-P, RF = 360
3rd harmonic distortion
HD3
f = 30 MHz, AV = +2 5/
VOUT = 2 VP-P, RF = 360
All
dBc
f = 50 MHz, AV = +2 5/
VOUT = 2 VP-P, RF = 360
f = 100 MHz, AV = +2 5/
VOUT = 2 VP-P, RF = 360
1/ Unless otherwise specified, AV = +1, fixed resistance (RF) = 510 , source resistance (RS) = 0
load resistance (RL) = 100 , and VOUT = 0 V. See figure 2.
,
2/ Device type 02 only, will meet all levels M, D, P, L, R, F of irradiation. However, this device is only tested at the 'F' level.
When performing post irradiation electrical measurements for any RHA level, TA = +25 C.
3/ Guaranteed from +IN common mode rejection test, by: +RIN = 1/CMSIBP
.
4/ Guaranteed from VOUT test with RL = 50 , by: IOUT = VOUT/50
.
5/ If not tested, shall be guaranteed to the limits specified in table I herein.
6/ Measured between 10% and 90% points.
7/ For 200 ps input transition times, overshoot decreases as input transition times increase, especially for AV = +1.
4. QUALITY ASSURANCE PROVISIONS
4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with
MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan
shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be
in accordance with MIL-PRF-38535, appendix A.
4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted
on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in
accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection.
SIZE
STANDARD
5962-94676
A
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
REVISION LEVEL
D
SHEET
8
DSCC FORM 2234
APR 97
Device types
Case outline
01 and 02
P
Terminal number
Terminal symbol
1
2
3
4
5
6
7
8
NC
-INPUT
+INPUT
-VS
NC
OUTPUT
+VS
NC
FIGURE 1. Terminal connections.
SIZE
STANDARD
MICROCIRCUIT DRAWING
5962-94676
A
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
REVISION LEVEL
D
SHEET
9
DSCC FORM 2234
APR 97
NOTES:
1. Unless otherwise noted, component value multiplier and tolerances shall be as follows:
resistors are + or - 1% and capacitors are + or - 10%.
2. Chip components are recommended.
FIGURE 2. Test circuits and waveforms.
SIZE
STANDARD
MICROCIRCUIT DRAWING
5962-94676
A
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
REVISION LEVEL
D
SHEET
10
DSCC FORM 2234
APR 97
FIGURE 2. Test circuits and waveforms - Continued.
SIZE
STANDARD
5962-94676
A
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
REVISION LEVEL
D
SHEET
11
DSCC FORM 2234
APR 97
NOTES:
R1 = R2 = 1 k , 5 %
R3 = 10 k , 5 %
C1 = C2 = 0.1 F
+VS = +5.5 V 0.5 V
-VS = -5.5 V 0.5 V
FIGURE 3. Irradiation circuit.
SIZE
STANDARD
5962-94676
A
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
REVISION LEVEL
D
SHEET
12
DSCC FORM 2234
APR 97
TABLE IIA. Electrical test requirements.
Subgroups
Test requirements
Subgroups
(in accordance with
MIL-STD-883, TM
5005, table I)
(in accordance with MIL-I-38535,
table III)
Device class M
1
Device class Q
1
Device class V
1
Interim electrical parameters
(see 4.2)
Final electrical parameters
(see 4.2)
1,2,3 1/
1,2,3 1/
1,2,3 1/ 2/
Group A test requirements
(see 4.4)
1,2,3,4,9 3/
1,2,3,4,9 3/
1,2,3,4,9 3/
Group C end-point electrical
parameters (see 4.4)
1
1
1
1
1
1
1,2,3 2/
Group D end-point electrical
parameters (see 4.4)
1
1
Group E end-point electrical
parameters (see 4.4)
1/ PDA applies to subgroup 1. For class V to subgroups 1 and
.
2/ Delta limits as specified in table IIB shall be required where specified, and the delta limits shall be completed
with reference to the zero hour electrical parameters (see Table I).
3/ Subgroups 4 and 9 are guaranteed if not tested.
Table IIB. Burn-in and operating life test Delta parameters (+25 C).
Parameters
Symbol
VIO
Delta Limits
3.0 mV
Input offset voltage
Positive input bias current
Negative input bias current
+IIB
8.0 A
-IIB
8.0 A
SIZE
STANDARD
5962-94676
A
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
REVISION LEVEL
D
SHEET
13
DSCC FORM 2234
APR 97
4.2.1 Additional criteria for device class M.
a. Burn-in test, method 1015 of MIL-STD-883.
(1) Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision
level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall
specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in
test method 1015.
(2) TA = +125 C, minimum.
b. Interim and final electrical test parameters shall be as specified in table IIA herein.
4.2.2 Additional criteria for device classes Q and V.
a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the
device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under
document revision level control of the device manufacturer's Technology Review Board (TRB) in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall
specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test
method 1015 of MIL-STD-883.
b. Interim and final electrical test parameters shall be as specified in table IIA herein.
c. Additional screening for device class V beyond the requirements of device class Q shall be as specified in
MIL-PRF-38535, appendix B or as modified in the device manufacturer’s Quality Management (QM) plan.
4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in
accordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for
groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4).
4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with
MIL-PRF-38535 or as specified in QM plan including groups A, B, C, D, and E inspections and as specified herein except where
option 2 of MIL-PRF-38535 permits alternate in-line control testing. Quality conformance inspection for device class M shall be
in accordance with MIL-PRF-38535, appendix A and as specified herein. Inspections to be performed for device class M shall
be those specified in method 5005 of MIL-STD-883 and herein for groups A, B, C, D, and E inspections (see 4.4.1 through
4.4.4).
4.4.1 Group A inspection.
a. Tests shall be as specified in table IIA herein.
b. Subgroups 5, 6, 7, 8, 10, and 11 in table I, method 5005 of MIL-STD-883 shall be omitted.
4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table IIA herein.
4.4.2.1 Additional criteria for device class M. Steady-state life test conditions, method 1005 of MIL-STD-883:
a. Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level
control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify
the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method
1005 of MIL-STD-883.
b. TA = +125 C, minimum.
c. Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883.
SIZE
STANDARD
5962-94676
A
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
REVISION LEVEL
D
SHEET
14
DSCC FORM 2234
APR 97
4.4.2.2 Additional criteria for device classes Q and V. The steady-state life test duration, test condition and test temperature,
or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The
test circuit shall be maintained under document revision level control by the device manufacturer's TRB in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify
the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 of
MIL-STD-883.
4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table IIA herein.
4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness
assured (see 3.5 herein). RHA levels for device classes M, Q, and V shall be as specified in MIL-PRF-38535. End-point
electrical parameters shall be as specified in table IIA herein.
4.4.4.1 Total dose irradiation testing. Total dose irradiation testing shall be performed in accordance with MIL-STD-883
method 1019 Condition A and as specified herein.
4.4.4.1.1 Accelerated aging test. Accelerated aging tests shall be performed on all devices requiring a RHA level greater
than 5k rads(SI). The post-anneal end-point electrical parameter limits shall be as specified in table I herein and shall be the
pre-irradiation end-point electrical parameter limit at 25 C 5 C. Testing shall be performed at initial qualification and after any
design or process changes which may affect the RHA response of the device.
4.4.4.2 Neutron testing. Neutron testing shall be performed in accordance with test method 1017 of MIL-STD-883 and
herein (See 1.5). All device classes must meet the post irradiation end-point electrical parameter limits as defined in table I, for
the subgroups specified in table IIA herein at TA = +25 C 5 C after an exposure of 2 X 1012 neutrons/cm2 (minimum).
4.4.4.3 Dose rate induced latchup testing. Dose rate induced latchup testing shall be performed in accordance with test
method 1020 of MIL-STD-883 and as specified herein (See 1.5). Tests shall be performed on devices, SEC, or approved test
structures at technology qualification and after any design or process changes which may effect the RHA capability of the
process.
4.4.4.4 Dose rate burnout. When required by the customer, test shall be performed on devices, SEC, or approved test
structures at technology qualifications and after any design or process changes which may effect the RHA capability of the
process. Dose rate burnout shall be performed in accordance with test method 1023 of MIL-STD-883 and as specified herein.
5. PACKAGING
5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device
classes Q and V or MIL-PRF-38535, appendix A for device class M.
6. NOTES
6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications
(original equipment), design applications, and logistics purposes.
6.1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractor
prepared specification or drawing.
6.1.2 Substitutability. Device class Q devices will replace device class M devices.
6.2 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated with the users of record for
the individual documents. This coordination will be accomplished in accordance with MIL-STD-973 using DD Form 1692,
Engineering Change Proposal.
6.3 Record of users. Military and industrial users should inform Defense Supply Center Columbus when a system
application requires configuration control and which SMD's are applicable to that system. DSCC will maintain a record of users
and this list will be used for coordination and distribution of changes to the drawings. Users of drawings covering
microelectronic devices (FSC 5962) should contact DSCC-VA, telephone (614) 692-0525.
SIZE
STANDARD
5962-94676
A
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
REVISION LEVEL
D
SHEET
15
DSCC FORM 2234
APR 97
6.4 Comments. Comments on this drawing should be directed to DSCC-VA , Columbus, Ohio 43216-5000, or telephone
(614) 692-0674.
6.5 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in
MIL-PRF-38535 and MIL-HDBK-1331.
6.6 Sources of supply.
6.6.1 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML-38535.
The vendors listed in QML-38535 have submitted a certificate of compliance (see 3.6 herein) to DSCC-VA and have agreed to
this drawing.
6.6.2 Approved sources of supply for device class M. Approved sources of supply for class M are listed in MIL-HDBK-103.
The vendors listed in MIL-HDBK-103 have agreed to this drawing and a certificate of compliance (see 3.6 herein) has been
submitted to and accepted by DSCC-VA.
SIZE
STANDARD
5962-94676
A
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
REVISION LEVEL
D
SHEET
16
DSCC FORM 2234
APR 97
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-94676
10. SCOPE
10.1 Scope. This appendix establishes minimum requirements for microcircuit die to be supplied under the Qualified
Manufacturers List (QML) Program. QML microcircuit die meeting the requirements of MIL-PRF-38535 and the manufacturers
approved QML plan for use in monolithic microcircuits, multichip modules (MCMs), hybrids, electronic modules, or devices
using chip and wire designs in accordance with MIL-PRF-38534 are specified herein. Two product assurance classes
consisting of military high reliability (device class Q) and space application (device Class V) are reflected in the Part or
Identification Number (PIN). When available a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.
10.2 PIN. The PIN is as shown in the following example:
5962
F
94676
02
V
9
A
Federal
RHA
designator
(see 10.2.1)
Device
type
(see 10.2.2)
Device
class
designator
(see 10.2.3)
Die
code
Die
Details
(see 10.2.4)
stock class
designator
\
/
\/
Drawing number
10.2.1 RHA designator. Device classes Q and V RHA identified die shall meet the MIL-PRF-38535 specified RHA levels. A
dash (-) indicates a non-RHA die.
10.2.2 Device type(s). The device type(s) shall identify the circuit function as follows:
Device type
02
Generic number
HS-1100RH
Circuit function
Radiation hardened, ultra high speed
current feedback amplifier
10.2.3 Device class designator.
Device class
Device requirements documentation
Q or V
Certification and qualification to the die requirements of MIL-PRF-38535
SIZE
STANDARD
MICROCIRCUIT DRAWING
5962-94676
A
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
REVISION LEVEL
D
SHEET
17
DSCC FORM 2234
APR 97
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-94676
10.2.4. Die Details. The die details designation shall be a unique letter which designates the die’s physical dimensions,
bonding pad location(s) and related electrical function(s), interface materials, and other assembly related information, for each
product and variant supplied to this appendix.
10.2.4.1 Die physical dimensions.
Die type
02
Figure number
A-1
10.2.4.2. Die bonding pad locations and electrical functions.
Die type
Figure number
A-1
02
10.2.4.3. Interface materials.
Die type
Figure number
A-1
02
10.2.4.4. Assembly related information.
Die type
02
Figure number
A-1
10.3. Absolute maximum ratings. See paragraph 1.3 within the body of this drawing for details.
10.4 Recommended operating conditions. See paragraph 1.4 within the body of this drawing for details.
SIZE
STANDARD
MICROCIRCUIT DRAWING
5962-94676
A
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
REVISION LEVEL
D
SHEET
18
DSCC FORM 2234
APR 97
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-94676
20. APPLICABLE DOCUMENTS.
20.1 Government specifications, standards, and handbooks. Unless otherwise specified, the following specification,
standard, and handbook of the issue listed in that issue of the Department of Defense Index of Specifications and Standards
specified in the solicitation, form a part of this drawing to the extent specified herein.
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
STANDARDS
DEPARTMENT OF DEFENSE
MIL-STD-883 - Test Method Standard Microcircuits.
HANDBOOK
DEPARTMENT OF DEFENSE
MIL-HDBK-103 - List of Standard Microcircuit Drawings (SMD’s).
(Copies of the specification, standard, and handbook required by manufacturers in connection with specific acquisition
functions should be obtained from the contracting activity or as directed by the contracting activity).
20.2. Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the
text of this drawing shall take precedence.
30. REQUIREMENTS
30.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with
MIL-PRF-38535 and as specified herein or as modified in the device manufacturer’s Quality Management (QM) plan. The
modification in the QM plan shall not effect the form, fit or function as described herein.
30.2 Design, construction and physical dimensions. The design, construction and physical dimensions shall be as specified
in MIL-PRF-38535 and the manufacturer’s QM plan, for device classes Q and V and herein.
30.2.1 Die physical dimensions. The die physical dimensions shall be as specified in 10.2.4.1 and on figure A-1.
30.2.2 Die bonding pad locations and electrical functions. The die bonding pad locations and electrical functions shall be as
specified in 10.2.4.2 and on figure A-1.
30.2.3 Interface materials. The interface materials for the die shall be as specified in 10.2.4.3 and on figure A-1.
30.2.4 Assembly related information. The assembly related information shall be as specified in 10.2.4.4 and figure A-1.
30.2.5 Radiation exposure circuit. The radiation exposure circuit shall be as defined within paragraph 3.2.4. of the body of
this document.
SIZE
STANDARD
5962-94676
A
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
REVISION LEVEL
D
SHEET
19
DSCC FORM 2234
APR 97
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-94676
30.3 Electrical performance characteristics and post-irradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and post-irradiation parameter limits are as specified in table I of the body of this
document.
30.4 Electrical test requirements. The wafer probe test requirements shall include functional and parametric testing sufficient
to make the packaged die capable of meeting the electrical performance requirements in table I.
30.5 Marking. As a minimum, each unique lot of die, loaded in single or multiple stack of carriers, for shipment to a
customer, shall be identified with the wafer lot number, the certification mark, the manufacturer’s identification and the PIN
listed in 10.2 herein. The certification mark shall be a “QML” or “Q” as required by MIL-PRF-38535.
30.6 Certification of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-
38535 listed manufacturer in order to supply to the requirements of this drawing (see 60.4 herein). The certificate of compliance
submitted to DSCC-VA prior to listing as an approved source of supply for this appendix shall affirm that the manufacturer’s
product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and the requirements herein.
30.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535
shall be provided with each lot of microcircuit die delivered to this drawing.
40. QUALITY ASSURANCE PROVISIONS
40.1 Sampling and inspection. For device classes Q and V, die sampling and inspection procedures shall be in accordance
with MIL-PRF-38535 or as modified in the device manufacturer’s Quality Management (QM) plan. The modifications in the QM
plan shall not effect the form, fit or function as described herein.
40.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and as defined in the
manufacturer’s QM plan. As a minimum it shall consist of:
a) Wafer lot acceptance for Class V product using the criteria defined within MIL-STD-883 test method 5007.
b) 100% wafer probe (see paragraph 30.4).
c) 100% internal visual inspection to the applicable class Q or V criteria defined within MIL-STD-883 test method 2010
or the alternate procedures allowed within MIL-STD-883 test method 5004.
40.3 Conformance inspection.
40.3.1 Group E inspection. Group E inspection is required only for parts intended to be identified as radiation assured (see
30.5 herein). RHA levels for device classes Q and V shall be as specified in MIL-PRF-38535. End point electrical testing of
packaged die shall be as specified in table IIA herein. Group E tests and conditions are as specified within paragraphs 4.4.4.1,
4.4.4.1.1, 4.4.4.2, 4.4.4.3, and 4.4.4.4.
50. DIE CARRIER
50.1 Die carrier requirements. The requirements for the die carrier shall be in accordance with the manufacturer’s QM plan
or as specified in the purchase order by the acquiring activity. The die carrier shall provide adequate physical, mechanical and
electrostatic protection.
SIZE
STANDARD
5962-94676
A
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
REVISION LEVEL
D
SHEET
20
DSCC FORM 2234
APR 97
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-94676
60 NOTES
60.1 Intended use. Microcircuit die conforming to this drawing are intended for use in microcircuits built in accordance with
MIL-PRF-38535 or MIL-PRF-38534 for government microcircuit applications (original equipment), design applications and
logistics purposes.
60.2 Comments. Comments on this appendix should be directed to DSCC-VA, Columbus, Ohio, 43216-5000 or telephone
(614)-692-0536.
60.3 Abbreviations, symbols and definitions. The abbreviations, symbols, and definitions used herein are defined within
MIL-PRF-38535 and MIL-STD-1331.
60.4 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML-38535.
The vendors listed within QML-38535 have submitted a certificate of compliance (see 30.6 herein) to DSCC-VA and have
agreed to this drawing.
SIZE
STANDARD
5962-94676
A
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
REVISION LEVEL
D
SHEET
21
DSCC FORM 2234
APR 97
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-94676
+INPUT
-INPUT
-VS
-VL
VH
+VS
OUTPUT
NOTE: Pad numbers reflect terminal numbers when placed in case outline P.
FIGURE A-1. Die bonding pad locations and electrical functions.
SIZE
STANDARD
5962-94676
A
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
REVISION LEVEL
D
SHEET
22
DSCC FORM 2234
APR 97
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-94676
Die physical dimensions.
Die size: 1600 x 1130 microns
Die thickness: 14 mils 1 mils
Interface materials.
Top metallization: AlCu (2%) 16 kÅ 0.8 kÅ
Backside metallization: None
Glassivation.
Type: Nitride
Thickness: 4 kÅ 0.5 kÅ
Substrate: UHF-1, bonded wafer, DI (dielectrically isolated)
Assembly related information.
Substrate potential: Floating
Special assembly instructions: 1. -VS and +VS must be double bonded.
2. -VS and -VL must be bonded to the same post.
3. +VS and VH must be bonded to the same post.
FIGURE A-1. Die bonding pad locations and electrical functions - continued.
SIZE
STANDARD
MICROCIRCUIT DRAWING
5962-94676
A
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
REVISION LEVEL
D
SHEET
23
DSCC FORM 2234
APR 97
STANDARD MICROCIRCUIT DRAWING BULLETIN
DATE: 00-07-17
Approved sources of supply for SMD 5962-94676 are listed below for immediate acquisition information only and
shall be added to MIL-HDBK-103 and QML-38535 during the next revision. MIL-HDBK-103 and QML-38535 will be
revised to include the addition or deletion of sources. The vendors listed below have agreed to this drawing and a
certificate of compliance has been submitted to and accepted by DSCC-VA. This bulletin is superseded by the next
dated revision of MIL-HDBK-103 and QML-38535.
Standard
microcircuit drawing
PIN 1/
Vendor
CAGE
number
Vendor
similar
PIN 2/
5962-9467601MPA
5962F9467602VPA
5962F9467602VPC
5962F9467602V9A
34371
34371
34371
34371
HFA1100MJ/883
HS7-1100RH-Q
HS7B-1100RH-Q
HS0-1100RH-Q
1/ The lead finish shown for each PIN representing
a hermetic package is the most readily available
from the manufacturer listed for that part. If the
desired lead finish is not listed contact the vendor
to determine its availability.
2/ Caution. Do not use this number for item
acquisition. Items acquired to this number may not
satisfy the performance requirements of this drawing.
Vendor CAGE
number
Vendor name
and address
34371
Intersil Corporation
P.O. Box 883
Melbourne, FL 32902-0883
The information contained herein is disseminated for convenience only and the
Government assumes no liability whatsoever for any inaccuracies in the
information bulletin.
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