5962-9561308HXX [ETC]

512Kx8 MONOLITHIC SRAM; 512Kx8单片SRAM
5962-9561308HXX
型号: 5962-9561308HXX
厂家: ETC    ETC
描述:

512Kx8 MONOLITHIC SRAM
512Kx8单片SRAM

内存集成电路 静态存储器 CD
文件: 总10页 (文件大小:118K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
WMS512K8-XXX  
HI-RELIABILITY PRODUCT  
512Kx8 MONOLITHIC SRAM, SMD 5962-95613  
FEATURES  
32 pin, Rectangular Ceramic Leadless Chip Carrier  
(Package 601)  
Access Times 15, 17, 20, 25, 35, 45, 55ns  
MIL-STD-883 Compliant Devices Available  
Commercial, Industrial and Military Temperature Range  
5 Volt Power Supply  
Revolutionary, Center Power/Ground Pinout  
JEDEC Approved  
• 36 lead Ceramic SOJ (Package 100)  
• 36 lead Ceramic Flat Pack (Package 226)  
Low Power CMOS  
Low Power Data Retention for Battery Back-up Operation  
TTL Compatible Inputs and Outputs  
Evolutionary, Corner Power/Ground Pinout  
JEDEC Approved  
• 32 pin Ceramic DIP (Package 300)  
• 32 lead Ceramic SOJ (Package 101)  
• 32 lead Ceramic Flat Pack (Package 220)  
• 32 lead Ceramic Flat Pack (Package 142)  
REVOLUTIONARY PINOUT  
EVOLUTIONARY PINOUT  
32 DIP  
36 FLAT PACK  
36 CSOJ  
32 CSOJ (DE)  
32 FLAT PACK (FE)*  
32 FLAT PACK (FD)  
32 CLCC  
TOP VIEW  
TOP VIEW  
TOP VIEW  
A0  
A1  
1
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
NC  
A18  
A16  
A14  
A12  
A7  
1
32  
VCC  
2
A18  
A17  
A16  
A15  
OE  
2
31 A15  
30 A17  
29 WE  
28 A13  
27 A8  
4
3 2 1 32 31 30  
A2  
3
3
5
29  
28  
27  
26  
25  
24  
23  
22  
21  
A7  
A6  
A5  
A4  
A3  
A2  
A1  
A0  
WE  
A13  
A8  
A3  
4
4
6
A4  
5
5
CS  
I/O0  
I/O1  
6
7
A6  
6
7
I/O7  
I/O6  
GND  
8
A5  
7
26 A9  
A9  
8
A4  
8
25 A11  
24 OE  
23 A10  
22 CS  
21 I/O7  
20 I/O6  
19 I/O5  
18 I/O4  
17 I/O3  
9
A11  
OE  
A10  
CS  
VCC  
9
A3  
9
10  
11  
12  
13  
GND  
I/O2  
I/O3  
WE  
A5  
10  
11  
12  
13  
14  
15  
16  
17  
18  
VCC  
A2  
10  
11  
12  
13  
14  
15  
16  
I/O5  
I/O4  
A14  
A13  
A12  
A11  
A10  
NC  
A1  
A0  
I/O  
0
I/O7  
I/O0  
I/O1  
I/O2  
GND  
14 15 16 17 18 19 20  
A6  
A7  
A8  
A9  
PIN DESCRIPTION  
A0-18  
I/O0-7  
CS  
Address Inputs  
Data Input/Output  
Chip Select  
OE  
Output Enable  
Write Enable  
+5.0V Power  
Ground  
WE  
VCC  
GND  
*Package not recommended for new designs, "FD" recommended for new designs.  
1
White Electronic Designs Corporation • (602) 437-1520  
www.whiteedc.com  
October 2000 Rev. 4  
WMS512K8-XXX  
ABSOLUTE MAXIMUM RATINGS  
TRUTH TABLE  
Parameter  
Symbol  
TA  
Min  
-55  
-65  
-0.5  
Max  
+125  
+150  
Vcc+0.5  
150  
Unit  
°C  
°C  
V
CS  
H
L
L
L
OE  
X
L
X
H
WE  
X
H
L
H
Mode  
Standby  
Read  
Write  
Out Disable  
Data I/O  
High Z  
Data Out  
Data In  
High Z  
Power  
Standby  
Active  
Active  
Active  
Operating Temperature  
Storage Temperature  
Signal Voltage Relative to GND  
Junction Temperature  
Supply Voltage  
TSTG  
VG  
TJ  
°C  
V
VCC  
-0.5  
7.0  
RECOMMENDED OPERATING CONDITIONS  
Parameter  
Symbol  
VCC  
Min  
4.5  
Max  
5.5  
Unit  
V
Supply Voltage  
Input High Voltage  
Input Low Voltage  
Operating Temp. (Mil.)  
VIH  
2.2  
VCC + 0.3  
+0.8  
V
VIL  
-0.3  
-55  
V
TA  
+125  
°C  
CAPACITANCE  
(TA = +25°C)  
Parameter  
Symbol  
Condition  
Package  
Speed (ns)  
Max  
Unit  
Input capacitance  
CIN  
V
IN = 0V, f = 1.0MHz  
32 Pin CSOJ, DIP,  
Flat Pack Evolutionary  
15 to 55  
20  
pF  
32 Pin CLCC  
36 Pin CSOJ & Flat Pack  
Revolutionary  
15 to 55  
15 to 35  
45 to 55  
15 to 55  
15  
12  
20  
20  
pF  
pF  
pF  
pF  
Output capicitance  
COUT  
V
OUT = 0V, f = 1.0MHz  
32 Pin CSOJ, DIP,  
Flat Pack Evolutionary  
36 Pin CSOJ & Flat Pack  
Revolutionary  
15 to 35  
45 to 55  
12  
20  
pF  
pF  
This parameter is guaranteed by design but not tested.  
DC CHARACTERISTICS  
(VCC = 5.0V, GND = 0V, TA = -55°C to +125°C)  
Parameter  
Sym  
Conditions  
Units  
Min  
Max  
Input Leakage Current  
Output Leakage Current  
Operating Supply Current*  
Standby Current  
ILI  
ILO  
ICC  
ISB  
VOL  
VCC = 5.5, VIN = GND to VCC  
10  
10  
µA  
µA  
mA  
mA  
V
CS = VIH, OE = VIH, VOUT = GND to VCC  
CS = VIL, OE = VIH, f = 5MHz, Vcc = 5.5  
CS = VIH, OE = VIH, f = 5MHz, Vcc = 5.5  
160  
15  
Output Low Voltage  
IOL = 8mA for 17 - 35ns,  
IOL = 2.1mA for 45 - 55ns, VCC = 4.5  
0.4  
Output High Voltage  
VOH  
IOH = -4.0mA for 17 - 35ns,  
IOH = -1.0mA for 45 - 55ns, VCC = 4.5  
2.4  
V
NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V  
* Not 100% duty cycle  
DATA RETENTION CHARACTERISTICS FOR LOW POWER “L” VERSION  
Parameter  
Symbol  
Conditions  
Units  
Min  
Max  
5.5  
7
Data Retention Supply Voltage  
Low Power Data Retention  
Low Power Data Retention  
VDR  
CS VCC -0.2V  
VCC = 3V  
2.0  
V
ICCDR1  
ICCDR2  
mA  
mA  
VCC = 2V  
2
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com  
2
WMS512K8-XXX  
AC CHARACTERISTICS  
(VCC = 5.0V, GND = 0V, TA = -55°C to +125°C)  
Parameter  
Read Cycle  
Symbol  
-15  
-17  
-20  
-25  
-35  
-45  
-55  
Units  
Min Max Min Max  
Min Max  
Min Max  
Min  
Max Min  
Max  
Min Max  
Read Cycle Time  
tRC  
tAA  
15  
0
17  
0
20  
20  
0
25  
25  
0
35  
45  
55  
55  
0
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Address Access Time  
15  
17  
35  
45  
Output Hold from Address Change  
Chip Select Access Time  
tOH  
0
0
tACS  
15  
8
17  
9
20  
10  
2
25  
12  
2
35  
25  
4
45  
25  
55  
25  
4
Output Enable to Output Valid  
Chip Select to Output in Low Z  
Output Enable to Output in Low Z  
Chip Disable to Output in High Z  
Output Disable to Output in High Z  
tOE  
tCLZ1  
tOLZ1  
tCHZ1  
tOHZ1  
2
0
2
0
4
0
0
0
0
0
8
8
9
9
10  
10  
12  
12  
15  
15  
20  
20  
20  
20  
1. This parameter is guaranteed by design but not tested.  
AC CHARACTERISTICS  
(VCC = 5.0V, GND = 0V, TA = -55°C to +125°C)  
Parameter  
Symbol  
-15  
-17  
-20  
-25  
-35  
-45  
Min  
-55  
Units  
Write Cycle  
Min Max  
Min Max  
Min Max Min  
Max Min Max  
Max Min Max  
Write Cycle Time  
tWC  
tCW  
tAW  
tDW  
tWP  
tAS  
15  
13  
13  
8
17  
14  
14  
9
20  
14  
14  
10  
14  
2
25  
15  
15  
10  
15  
2
35  
25  
25  
20  
25  
2
45  
35  
35  
25  
35  
2
55  
50  
50  
25  
40  
2
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Chip Select to End of Write  
Address Valid to End of Write  
Data Valid to End of Write  
Write Pulse Width  
13  
2
14  
2
Address Setup Time  
Address Hold Time  
tAH  
0
0
0
0
0
5
5
Output Active from End of Write  
Write Enable to Output in High Z  
Data Hold Time  
tOW1  
tWHZ1  
tDH  
2
2
3
4
4
5
5
8
9
9
10  
15  
20  
25  
0
0
0
0
0
0
0
1. This parameter is guaranteed by design but not tested.  
AC TEST CIRCUIT  
AC TEST CONDITIONS  
IOL  
Parameter  
Typ  
Unit  
V
Current Source  
Input Pulse Levels  
VIL = 0, VIH = 3.0  
Input Rise and Fall  
5
ns  
V
Input and Output Reference Level  
Output Timing Reference Level  
1.5  
1.5  
D.U.T.  
VZ 1.5V  
V
(Bipolar Supply)  
Ceff = 50 pf  
NOTES:  
VZ is programmable from -2V to +7V.  
IOL & IOH programmable from 0 to 16mA.  
Tester Impedance Z0 = 75 .  
VZ is typically the midpoint of VOH and VOL.  
IOL & IOH are adjusted to simulate a typical resistive load circuit.  
ATE tester includes jig capacitance.  
IOH  
Current Source  
3
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com  
WMS512K8-XXX  
TIMING WAVEFORM - READ CYCLE  
tRC  
ADDRESS  
CS  
tAA  
tRC  
tCHZ  
tACS  
tCLZ  
ADDRESS  
tAA  
OE  
tOE  
tOLZ  
tOH  
tOHZ  
DATA I/O  
DATA I/O  
PREVIOUS DATA VALID  
DATA VALID  
DATA VALID  
HIGH IMPEDANCE  
READ CYCLE 1 (CS = OE = V , WE = V  
)
READ CYCLE 2 (WE = V )  
IH  
IL IH  
WRITE CYCLE - WE CONTROLLED  
tWC  
ADDRESS  
tAW  
tAH  
tCW  
CS  
WE  
tAS  
tWP  
tOW  
tDH  
tWHZ  
tDW  
DATA I/O  
DATA VALID  
WRITE CYCLE 1, WE CONTROLLED  
WRITE CYCLE - CS CONTROLLED  
tWC  
ADDRESS  
WS32K32-XHX  
tAW  
tAH  
tCW  
CS  
tAS  
tWP  
WE  
tOW  
tDH  
tWHZ(1)  
tDW  
DATA I/O  
DATA VALID  
WRITE CYCLE 1 WE CONTROLLED (OE = V  
)
IH  
(1) GUARANTEED BY DESIGN BUT NOT TESTED  
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com  
4
WMS512K8-XXX  
PACKAGE 100: 36 LEAD, CERAMIC SOJ  
23.37 (0.920) ± 0.25 (0.010)  
4.7 (0.184) MAX  
0.89 (0.035)  
Radius TYP  
0.2 (0.008)  
± 0.05 (0.002)  
11.23 (0.442)  
± 0.30 (0.012)  
9.55 (0.376) ± 0.25 (0.010)  
1.27 (0.050) ± 0.25 (0.010)  
PIN 1 IDENTIFIER  
1.27 (0.050) TYP  
21.6 (0.850) TYP  
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES  
PACKAGE 101: 32 LEAD, CERAMIC SOJ  
21.1 (0.830) ± 0.25 (0.010)  
3.96 (0.156) MAX  
0.89 (0.035)  
Radius TYP  
0.2 (0.008)  
± 0.05 (0.002)  
11.23 (0.442)  
± 0.30 (0.012)  
9.55 (0.376) ± 0.25 (0.010)  
1.27 (0.050) ± 0.25 (0.010)  
PIN 1 IDENTIFIER  
1.27 (0.050) TYP  
19.1 (0.750) TYP  
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES  
5
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com  
WMS512K8-XXX  
PACKAGE 220: 32 LEAD, CERAMIC FLAT PACK  
20.83 (0.820)  
± 0.25 (0.010)  
PIN 1  
IDENTIFIER  
2.60 (0.102) MAX  
10.41 (0.410)  
± 0.13 (0.005)  
10.16 (0.400)  
± 0.51 (0.020)  
0.43 (0.017)  
± 0.05 (0.002)  
1.27 (0.050) TYP  
19.05 (0.750) TYP  
0.127 (0.005)  
+ 0.05 (0.002)  
– 0.025 (0.001)  
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES  
PACKAGE 226: 36 LEAD, CERAMIC FLAT PACK  
23.37 (0.920)  
± 0.25 (0.010)  
PIN 1  
IDENTIFIER  
2.72 (0.107)  
MAX  
12.95 (0.510)  
± 0.13 (0.005)  
12.7 (0.500)  
± 0.5 (0.020)  
5.1 (0.200)  
± 0.25 (0.010)  
0.43 (0.017)  
± 0.05 (0.002)  
1.27 (0.050) TYP  
21.59 (0.850) TYP  
0.127 (0.005)  
± 0.05 (0.002)  
3.8 (0.150)  
TYP  
32.64 (1.285) TYP  
38.1 (1.50) ± 0.4 (0.015)  
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES  
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com  
6
WMS512K8-XXX  
PACKAGE 300: 32 PIN, CERAMIC DIP, SINGLE CAVITY SIDE BRAZED  
42.8 (1.686) MAX  
5.13 (0.202) MAX  
3.2 (0.125) MIN  
PIN 1 IDENTIFIER  
0.25 (0.010)  
± 0.05 (0.002)  
0.99 (0.039)  
± 0.51 (0.020)  
15.25 (0.600)  
2.5 (0.100)  
TYP  
1.27 (0.050)  
± 0.1 (0.005)  
0.46 (0.018)  
± 0.05 (0.002)  
± 0.25 (0.010)  
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES  
7
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com  
WMS512K8-XXX  
PACKAGE 601: 32 PIN, RECTANGULAR CERAMIC LEADLESS CHIP CARRIER  
7.62 (0.300) TYP  
3.81  
(0.150) TYP  
5.08  
(0.200)  
TYP  
0.56 (0.022)  
0.71 (0.028)  
10.16  
(0.400)  
TYP  
PIN 1  
0.38 (0.015) x 45°  
PIN 1 IDENTIFIER  
11.25 (0.443)  
14.15 (0.457)  
1.63 (0.064)  
2.54 (0.100)  
13.79 (0.543)  
14.15 (0.557)  
1.02 (0.040) x 45°  
3 PLACES  
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES  
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com  
8
WMS512K8-XXX  
ORDERING INFORMATION  
W M S 512K 8 X - XXX X X X  
LEAD FINISH:  
Blank = Gold plated leads  
A = Solder dip leads  
DEVICE GRADE:  
M= Military Screened  
I = Industrial  
-55°C to +125°C  
-40°C to +85°C  
0°C to +70°C  
C = Commercial  
PACKAGE:  
C = 32 Pin Ceramic 0.600" DIP (Package 300)  
CL = 32 Pin Rectangular Ceramic Leadless Chip Carrier (Package 601)  
DE = 32 Lead Ceramic SOJ (Package 101) Evolutionary  
DJ = 36 Lead Ceramic SOJ (Package 100)  
F = 36 Lead Ceramic Flat Pack (Package 226)  
FE = 32 Lead Ceramic Flat Pack (Package 220)  
ACCESS TIME (ns)  
IMPROVEMENT MARK:  
Blank = Standard  
L = Low Power Data Retention  
ORGANIZATION, 512K x 8  
SRAM  
MONOLITHIC  
WHITE ELECTRONIC DESIGNS CORP.  
9
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com  
WMS512K8-XXX  
DEVICE TYPE  
SPEED  
PACKAGE  
SMD NO.  
512K x 8 SRAM Monolithic  
512K x 8 SRAM Monolithic  
512K x 8 SRAM Monolithic  
512K x 8 SRAM Monolithic  
512K x 8 SRAM Monolithic  
512K x 8 SRAM Monolithic  
512K x 8 SRAM Monolithic  
55ns  
45ns  
35ns  
25ns  
20ns  
17ns  
15ns  
32 pin DIP (C)  
32 pin DIP (C)  
32 pin DIP (C)  
32 pin DIP (C)  
32 pin DIP (C)  
32 pin DIP (C)  
32 pin DIP (C)  
5962-95613 05HYX  
5962-95613 06HYX  
5962-95613 07HYX  
5962-95613 08HYX  
5962-95613 09HYX  
5962-95613 10HYX  
5962-95613 14HYX  
512K x 8 SRAM Monolithic  
512K x 8 SRAM Monolithic  
512K x 8 SRAM Monolithic  
512K x 8 SRAM Monolithic  
512K x 8 SRAM Monolithic  
512K x 8 SRAM Monolithic  
512K x 8 SRAM Monolithic  
55ns  
45ns  
35ns  
25ns  
20ns  
17ns  
15ns  
32 lead SOJ Evol (DE)  
32 lead SOJ Evol (DE)  
32 lead SOJ Evol (DE)  
32 lead SOJ Evol (DE)  
32 lead SOJ Evol (DE)  
32 lead SOJ Evol (DE)  
32 lead SOJ Evol (DE)  
5962-95613 05HTX  
5962-95613 06HTX  
5962-95613 07HTX  
5962-95613 08HTX  
5962-95613 09HTX  
5962-95613 10HTX  
5962-95613 14HTX  
512K x 8 SRAM Monolithic  
512K x 8 SRAM Monolithic  
512K x 8 SRAM Monolithic  
512K x 8 SRAM Monolithic  
512K x 8 SRAM Monolithic  
512K x 8 SRAM Monolithic  
512K x 8 SRAM Monolithic  
55ns  
45ns  
35ns  
25ns  
20ns  
17ns  
15ns  
36 lead SOJ (DJ)  
36 lead SOJ (DJ)  
36 lead SOJ (DJ)  
36 lead SOJ (DJ)  
36 lead SOJ (DJ)  
36 lead SOJ (DJ)  
36 lead SOJ (DJ)  
5962-95613 05HZX  
5962-95613 06HZX  
5962-95613 07HZX  
5962-95613 08HZX  
5962-95613 09HZX  
5962-95613 10HZX  
5962-95613 14HZX  
512K x 8 SRAM Monolithic  
512K x 8 SRAM Monolithic  
512K x 8 SRAM Monolithic  
512K x 8 SRAM Monolithic  
512K x 8 SRAM Monolithic  
512K x 8 SRAM Monolithic  
512K x 8 SRAM Monolithic  
55ns  
45ns  
35ns  
25ns  
20ns  
17ns  
15ns  
36 lead Flatpack (F)  
36 lead Flatpack (F)  
36 lead Flatpack (F)  
36 lead Flatpack (F)  
36 lead Flatpack (F)  
36 lead Flatpack (F)  
36 lead Flatpack (F)  
5962-95613 05HXX  
5962-95613 06HXX  
5962-95613 07HXX  
5962-95613 08HXX  
5962-95613 09HXX  
5962-95613 10HXX  
5962-95613 14HXX  
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com  
10  

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