P3000ZL45X168
The Press Pack IGBT offers 3000 A without internal freewheeling diode using Infineon Trench 4.5 kV IGBT chips.
双极性晶体管
INFINEON
IMW120R060M1H
IMW120R060M1H是采用TO247-3封装的1200 V、60 mΩ CoolSiC™ SiC MOSFET,它基于先进的沟槽半导体工艺,该工艺经过优化,兼具性能与可靠性。 与IGBT和MOSFET等传统硅(Si)基开关相比,SiC MOSFET具有诸多优势,例如1200V级开关中最低的栅极电荷和器件电容电平、抗换向体二极管无反向恢复损耗、 独立于温度的低开关损耗以及无阈值导通特性。因此,CoolSiC™ MOSFET非常适用于硬开关和谐振开关拓扑结构,如功率因素校正(PFC)电路、双向拓扑以及DC-DC转换器或DC-AC逆变器。
开关 栅 DC-DC转换器 双极性晶体管 功率因数校正 二极管 栅极 半导体
INFINEON
MAX14745SEWX
PMIC with Ultra Low IQ Voltage Regulators and Battery Charger for Small Lithium Ion Systems
电池 集成电源管理电路
MAXIM
AT25DF512C-SSHN-T
512-Kbit, 1.65V Minimum SPI Serial Flash Memory with Dual-Read Support
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