54F132DMQB [ETC]
LOGIC GATE|QUAD 2-INPUT NAND|F-TTL|DIP|14PIN|CERAMIC ; 逻辑门| QUAD 2 -INPUT NAND | F - TTL | DIP | 14PIN |陶瓷\n
| 型号： | 54F132DMQB |
| 厂家： | 
ETC |
| 描述： | LOGIC GATE|QUAD 2-INPUT NAND|F-TTL|DIP|14PIN|CERAMIC
|
| 文件： | 总4页 (文件大小：17K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MILITARY DATA SHEET
Original Creation Date: 03/13/96
Last Update Date: 07/30/96
MN54F132-X REV 1A0
Last Major Revision Date: 03/13/96
QUAD 2-INPUT NAND SCHMITT TRIGGER
General Description
The F132 contains four 2-Input NAND gates which accept standard TTL input signals and
provide standard TTL output levels. They are capable of transforming slowly changing
input signals into sharply defined, jitter-free output signals. In addition, they have a
greater noise margin than conventional NAND gates.
Each circuit contains a 2-Input Schmitt trigger followed by a Darlington level shifter and
a phase splitter driving a TTL totem-pole output. The Schmitt trigger uses positive
feedback to effectively speed-up slow input transitions, and provide different input
threshold voltages for positive and negative-going transitions. This hysteresis between
the positive-going and negative-going input threshold (typically 800 mV) is determined by
resistor ratios and is essentially insensitive to temperature and supply voltage
variations.
Industry Part Number
NS Part Numbers
54F132
54F132DMQB
54F132FMQB
54F132LMQB
Prime Die
M132
Processing
Subgrp Description
Temp (oC)
MIL-STD-883, Method 5004
1
Static tests at
+25
2
Static tests at
+125
-55
3
Static tests at
4
Dynamic tests at
Dynamic tests at
Dynamic tests at
Functional tests at
Functional tests at
Functional tests at
Switching tests at
Switching tests at
Switching tests at
+25
Quality Conformance Inspection
5
+125
-55
6
MIL-STD-883, Method 5005
7
+25
8A
8B
9
+125
-55
+25
10
11
+125
-55
1
MILITARY DATA SHEET
MN54F132-X REV 1A0
Features
Guaranteed 4000V minimum ESD protection
2
MILITARY DATA SHEET
MN54F132-X REV 1A0
(Absolute Maximum Ratings)
(Note 1)
Storage Temperature
-65 C to +150 C
Ambient Temperature under Bias
Junction Temperature under Bias
Vcc Pin Potential to Ground Pin
-55 C to +125 C
-55 C to +175 C
-0.5V to +7.0V
Input Voltage
(Note 2)
-0.5V to +7.0V
Input Current
(Note 2)
-30 mA to +5.0mA
Voltage Applied to Output in HIGH State (with Vcc=0V)
Standard Output
-0.5V to Vcc
-0.5V to +5.5V
TRI-STATE Output
Current Applied to Output in LOW State (Max)
twice the rated Iol(mA)
4000V
ESD Last Passing Voltage (Min)
Note 1: Absolute Maximum ratings are those values beyond which the device may be damaged or
have its useful life impaired. Functional operation under these conditions is not
implied.
Note 2: Either voltage limit or current limit is sufficient to protect inputs.
Recommended Operating Conditions
Free Air Ambient Temperature
Commercial
Military
0 C to +70 C
-55 C to +125 C
Supply Voltage
Military
+4.5V to +5.5V
+4.5V to +5.5V
Commercial
3
MILITARY DATA SHEET
MN54F132-X REV 1A0
Electrical Characteristics
DC PARAMETER
(The following conditions apply to all the following parameters, unless otherwise specified.)
DC: VCC 4.5V to 5.5V, Temp range: -55C to 125C
PIN-
SUB-
SYMBOL
IIH
PARAMETER
CONDITIONS
NOTES
MIN
MAX UNIT
NAME
GROUPS
Input High
Current
VCC=5.5V, VM=2.7V, VINH=5.5V,
VINL=0.0V
1, 3 INPUTS
1, 3 INPUTS
1, 3 INPUTS
1, 3 OUTPUTS
20
uA
uA
mA
V
1, 2,
3
IBVI
IIL
Input High
Current
VCC=5.5V, VM=7.0V, VINH=5.5V,
VINL=0.0V
100
1, 2,
3
Input LOW Current VCC=5.5V, VM=0.5V, VINH=5.5V
-0.6
0.5
1, 2,
3
VOL
Output LOW
Voltage
VCC=4.5V, VIH=2.0V, IOL=20mA,
VINH=5.5V
1, 2,
3
VOH
Output HIGH
Voltage
VCC=4.5V, VIL=0.7V, IOH=-1.0mA,
VINH=5.5V
1, 3 OUTPUTS 2.5
1, 3 OUTPUTS -60
1, 3 INPUTS
V
1, 2,
3
IOS
Short Circuit
Current
VCC=5.5V, VINL=0.0V, VM=0.0V,
VINH=5.5V
-150
-1.2
17.0
18.0
2.0
mA
V
1, 2,
3
VCD
Input Clamp Diode VCC=4.5V, IM=-18mA, VINH=5.5V
Voltage
1, 2,
3
ICCH
ICCL
VT+
Supply Current
VCC=5.5V, VINL=0.0V
VCC=5.5V, VINH=5.5V
VCC=5.0V
1, 3 VCC
mA
mA
V
1, 2,
3
Supply Current
1, 3 VCC
1, 2,
3
Positive Going
Threshold
1, 3 INPUTS 1.45
1, 3 INPUTS 0.7
1, 3 OUTPUTS
1, 2,
3
VT-
Negative Going
Threshold
VCC=5.0V
1.05
250
V
1, 2,
3
ICEX
Output HIGH
Leakage Current
VCC=5.0V, VINL=0.0V, VM=5.5V,
VINH=5.5V
uA
1, 2,
3
AC PARAMETER
(The following conditions apply to all the following parameters, unless otherwise specified.)
AC: CL=50pf, RL=500 OHMS, TR=2.5ns, TF=2.5ns SEE AC FIGS
tpLH
Propagation Delay VCC=5.0V @25C, VCC=4.5V & 5.5V
@-55/125C
2, 4 An/Bn
to On
4.0
2.0
4.5
4.5
11.0
13.0
12.5
16.0
ns
ns
ns
ns
9
2, 4 An/Bn
to On
10, 11
9
tpHL
Propagation Delay VCC=5.0V @25C, VCC=4.5V & 5.5V
@-55/125C
2, 4 An/Bn
to On
2, 4 An/Bn
to On
10, 11
Note 1: Screen tested 100% on each device at +25C, +125C & -55C temperature, subgroups A1, 2,
3, 7 & 8.
Note 2: Screen tested 100% on each device at +25C temperature only, subgroup A9.
Note 3: Sample tested (Method 5005, Table 1) on each MFG. lot at +25C, +125C & -55C
temperature, subgroups A1, 2, 3, 7 & 8.
Note 4: Sample tested (Method 5005, Table 1) on each MFG. lot at +25C subgroup A9, and
periodically at +125C & -55C temperature, subgroups 10 & 11.
4
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