524H4 [ETC]

Infrared Emitting Diodes (IRED) ; 红外发光二极管( IRED )\n
524H4
型号: 524H4
厂家: ETC    ETC
描述:

Infrared Emitting Diodes (IRED)
红外发光二极管( IRED )\n

二极管
文件: 总2页 (文件大小:36K)
中文:  中文翻译
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GaAlAs HIGH POWER T-1 3/4 PACKAGE  
INFRARED EMITTING DIODE  
MIE-524H4  
Description  
Package Dimensions  
The MIE-524H4 is a GaAlAs infrared LED having  
a peak wavelength at 850 nm . It feature ultra-high  
power, high response speed and molded in water  
clear plastic package, the MIE-524H4 have greatly  
improved long-distance characteristics as well as  
as significantly increased its range of applicability.  
Unit: mm (inches)  
f 5.05  
(.200)  
5.47  
(.215)  
7.62  
(.300)  
5.90  
(.230)  
1.00  
(.040)  
SEE NOTE 2  
FLAT DENOTES CATHODE  
Features  
l Ultra-High radiant incidence  
l Ultra-high speed response  
l High modulation bandwidth  
l Standard T-1 3/4 ( f 5mm ) package  
l Radiation angle : 20°  
23.40 MIN  
(.920)  
0.50 TYP.  
(.020)  
1.00MIN.  
(.040)  
2.54NOM.  
(.100)  
l Peak wavelength l p = 850 nm  
SEE NOTE 3  
A
C
NOTES :  
Applications  
1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.  
2. Protruded resin under flange is 1.5 mm (.059") max.  
3. Lead spacing is measured where the leads emerge from the package.  
l Free air transmission systems with high -speed  
response  
l SIR  
Absolute Maximum Ratings  
'@ TA=25oC  
Parameter  
Power Dissipation  
Maximum Rating  
Unit  
mW  
A
120  
1
Peak Forward Current(300pps,10ms pulse)  
Continuos Forward Current  
Reverse Voltage  
100  
5
mA  
V
-55oC to +100oC  
-55oC to +100oC  
260oC for 5 seconds  
Operating Temperature Range  
Storage Temperature Range  
Lead Soldering Temperature  
Unity Opto Technology Co., Ltd.  
11/17/2000  
MIE-524H4  
Optical-Electrical Characteristics  
@ TA=25oC  
Parameter  
Radiant Intensity  
Forward Voltage  
Reverse Current  
Peak Wavelength  
Spectral Bandwidth  
Test Conditions  
Symbol  
Ie  
Min.  
Typ.  
6.5  
Max.  
Unit  
mW/sr  
V
IF=20mA  
IF=50mA  
VR=5V  
VF  
1.5  
1.8  
10  
mA  
IR  
l p  
IF=20mA  
IF=20mA  
850  
30  
nm  
Dl  
nm  
Half View Angle  
Rise Time  
IF=20mA  
IF=50mA  
IF=50mA  
2q1/2  
Tr  
20  
20  
30  
deg .  
nsec  
nsec  
Fall Time  
Tf  
Typical Optical-Electrical Characteristic Curves  
1
60  
50  
40  
30  
20  
10  
0
0.5  
0
750  
850  
950  
-55 -25  
0
25 50 75 100 125  
Ambient Temperature TA (oC )  
Wavelength (nm)  
FIG.1 SPECTRAL DISTRIBUTION  
FIG.2 FORWARD CURRENT VS.  
AMBIENT TEMPERATURE  
3
100  
80  
2.5  
2
60  
1.5  
1
40  
20  
0.5  
0
0
-40 -20  
0
20 40 60  
0.8 1.2 1.6 2.0 2.4 2.8  
Ambient Temperature TA (oC )  
Forward Voltage(V)  
FIG.3 FORWARD CURRENT VS.  
FORWARD VOLTAGE  
FIG.4 RELATIVE RADIANT INTENSITY  
VS. AMBIENT TEMPERATURE  
0° 10° 20°  
5
4
3
2
1
0
30°  
40°  
1.0  
0.9  
50°  
60°  
70°  
80°  
90°  
0.8  
0.5 0.3 0.1 0.2 0.4 0.6  
0
20  
40  
60  
80 100  
Forward Current (mA)  
FIG.6 RADIATION DIAGRAM  
FIG.5 RELATIVE RADIANT INTENSITY  
VS. FORWARD CURRENT  
11/17/2000  

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