4N28FR2VM [ETC]
OPTOCOUPLER TRANSITOR O/P ; 光电耦合器TRANSITOR O / P\n
| 型号： | 4N28FR2VM |
| 厂家： | 
ETC |
| 描述： | OPTOCOUPLER TRANSITOR O/P
|
| 文件： | 总7页 (文件大小：104K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
4N25
4N26
4N27
4N28
GlobalOptoisolator
The 4N25, 4N26, 4N27 and 4N28 devices consist of a gallium arsenide
infrared emitting diode optically coupled to a monolithic silicon phototransistor
detector.
•
•
•
Most Economical Optoisolator Choice for Medium Speed, Switching Applications
Meets or Exceeds All JEDEC Registered Specifications
To order devices that are tested and marked per VDE 0884 requirements, the
suffix ”V” must be included at end of part number. VDE 0884 is a test option.
Applications
•
•
•
•
General Purpose Switching Circuits
Interfacing and coupling systems of different potentials and impedances
I/O Interfacing
6
1
Solid State Relays
STANDARD THRU HOLE
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Rating
Symbol
Value
Unit
INPUT LED
Reverse Voltage
V
3
Volts
mA
R
SCHEMATIC
Forward Current — Continuous
I
F
60
LED Power Dissipation @ T = 25°C
with Negligible Power in Output Detector
P
D
120
mW
A
1
2
3
6
Derate above 25°C
1.41
mW/°C
OUTPUT TRANSISTOR
Collector–Emitter Voltage
Emitter–Collector Voltage
Collector–Base Voltage
5
4
V
V
V
30
7
Volts
Volts
Volts
mA
CEO
ECO
CBO
PIN 1. LED ANODE
2. LED CATHODE
3. N.C.
70
Collector Current — Continuous
I
C
150
150
4. EMITTER
5. COLLECTOR
6. BASE
Detector Power Dissipation @ T = 25°C
with Negligible Power in Input LED
Derate above 25°C
P
D
mW
A
1.76
mW/°C
TOTAL DEVICE
(1)
Isolation Surge Voltage
(Peak ac Voltage, 60 Hz, 1 sec Duration)
V
ISO
7500
Vac(pk)
Total Device Power Dissipation @ T = 25°C
Derate above 25°C
P
D
250
2.94
mW
mW/°C
A
Ambient Operating Temperature Range
Storage Temperature Range
T
–55 to +100
–55 to +150
260
°C
°C
°C
A
T
stg
Soldering Temperature (10 sec, 1/16″ from case)
T
L
1. Isolation surge voltage is an internal device dielectric breakdown rating.
1. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
4N25 4N26 4N27 4N28
(1)
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
(1)
Typ
Characteristic
INPUT LED
Symbol
Min
Max
Unit
V
F
Forward Voltage (I = 10 mA)
T
= 25°C
= –55°C
= 100°C
—
—
—
1.15
1.3
1.05
1.5
—
—
Volts
F
A
T
A
T
A
Reverse Leakage Current (V = 3 V)
R
I
—
—
—
100
µA
R
Capacitance (V = 0 V, f = 1 MHz)
C
18
—
pF
J
OUTPUT TRANSISTOR
Collector–Emitter Dark Current
4N25,26,27
4N28
I
—
—
1
1
50
100
nA
CEO
(V
CE
= 10 V, T = 25°C
A
(V
= 10 V, T = 100°C)
All Devices
I
I
—
—
30
70
7
1
0.2
45
100
7.8
500
7
—
—
—
—
—
—
—
—
—
µA
nA
CE
A
CEO
Collector–Base Dark Current (V
= 10 V)
Collector–Emitter Breakdown Voltage (I = 1 mA)
CB
CBO
V
V
V
Volts
Volts
Volts
—
C
(BR)CEO
(BR)CBO
(BR)ECO
Collector–Base Breakdown Voltage (I = 100 µA)
C
Emitter–Collector Breakdown Voltage (I = 100 µA)
E
DC Current Gain (I = 2 mA, V
CE
= 5 V)
h
C
C
—
—
—
—
C
FE
CE
CB
Collector–Emitter Capacitance (f = 1 MHz, V
= 0)
= 0)
pF
CE
Collector–Base Capacitance (f = 1 MHz, V
CB
19
9
pF
Emitter–Base Capacitance (f = 1 MHz, V
= 0)
C
pF
EB
EB
COUPLED
(2)
I (CTR)
C
Output Collector Current (I = 10 mA, V
CE
= 10 V)
mA (%)
F
4N25,26
4N27,28
2 (20)
1 (10)
7 (70)
5 (50)
—
—
Collector–Emitter Saturation Voltage (I = 2 mA, I = 50 mA)
V
CE(sat)
—
—
0.15
2.8
4.5
1.2
1.3
—
0.5
—
—
—
—
—
—
—
Volts
µs
C
F
(3)
Turn–On Time (I = 10 mA, V
= 10 V, R = 100 Ω)
t
F
CC
L
on
off
(3)
Turn–Off Time (I = 10 mA, V
= 10 V, R = 100 Ω)
t
—
µs
F
CC
L
(3)
Rise Time (I = 10 mA, V
CC
= 10 V, R = 100 Ω)
t
r
—
µs
F
L
(3)
Fall Time (I = 10 mA, V
CC
= 10 V, R = 100 Ω)
t
f
—
µs
F
L
(4)
Isolation Voltage (f = 60 Hz, t = 1 sec)
V
ISO
R
ISO
C
ISO
7500
Vac(pk)
Ω
(4)
11
10
Isolation Resistance (V = 500 V)
Isolation Capacitance (V = 0 V, f = 1 MHz)
—
(4)
—
0.2
pF
1. Always design to the specified minimum/maximum electrical limits (where applicable).
2. Current Transfer Ratio (CTR) = I /I x 100%.
C F
3. For test circuit setup and waveforms, refer to Figure 11.
4. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
4N25 4N26 4N27 4N28
TYPICAL CHARACTERISTICS
2
10
PULSE ONLY
PULSE OR DC
NORMALIZED TO:
= 10 mA
1.8
I
F
1
1.6
1.4
1.2
1
0.1
T
= –55
°
C
C
A
25°
100°
C
1
10
100
1000
0.01
0.5
1
2
5
10
20
50
I , LED FORWARD CURRENT (mA)
I , LED INPUT CURRENT (mA)
F
F
Figure 1. LED Forward Voltage versus Forward Current
Figure 2. Output Current versus Input Current
10
28
7
5
24
I
= 10 mA
5 mA
F
NORMALIZED TO T = 25°C
A
20
16
12
8
2
1
0.7
0.5
2 mA
1 mA
0.2
0.1
4
0
0
1
2
3
4
5
6
7
8
9
10
–60
–40 –20
0
20
40
60
80
100
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
T , AMBIENT TEMPERATURE (°C)
CE
A
Figure 3. Collector Current versus
Figure 4. Output Current versus Ambient Temperature
Collector–Emitter Voltage
100
50
NORMALIZED TO:
V
= 10 V
CC
V
T
= 10 V
CE
= 25°C
100
10
A
20
10
5
t
f
R
= 1000
L
{
V
= 30 V
CE
R
= 100
L
{
t
r
1
t
f
2
1
t
10 V
20
r
0.1
0
40
60
80
100
0.1
0.2
0.5
1
2
5
10
20
50
100
T , AMBIENT TEMPERATURE (
°C)
I , LED INPUT CURRENT (mA)
A
F
Figure 5. Dark Current versus Ambient Temperature
Figure 6. Rise and Fall Times
(Typical Values)
4N25 4N26 4N27 4N28
100
70
50
100
70
50
V
= 10 V
V
= 10 V
CC
CC
R
= 1000
L
20
20
10
R
= 1000
L
10
7
100
10
7
5
100
10
5
2
1
2
1
0.1
0.2
0.5 0.7
1
2
5
7
10
20
50 70 100
0.1
0.2
0.5 0.7
1
2
5
7
10
20
50 70100
I , LED INPUT CURRENT (mA)
I , LED INPUT CURRENT (mA)
F
F
Figure 7. Turn–On Switching Times
Figure 8. Turn–Off Switching Times
(Typical Values)
(Typical Values)
20
18
4
I
= 7 µA
I
= 0
C
B
F
LED
f = 1 MHz
16
6 µA
C
3
2
1
CB
14
12
5
µ
A
A
10
8
4
µ
C
EB
3
2
1
µA
µA
µA
6
C
CE
4
2
0
0.05 0.1
0.2
0.5
1
2
5
10
20
50
0
2
4
6
8
10
12
14
16
18
20
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
CE
Figure 9. DC Current Gain (Detector Only)
Figure 10. Capacitances versus Voltage
TEST CIRCUIT
WAVEFORMS
INPUT PULSE
V
= 10 V
CC
I
= 10 mA
INPUT
F
R
= 100 Ω
L
10%
OUTPUT PULSE
OUTPUT
90%
t
t
f
r
t
t
on
off
Figure 11. Switching Time Test Circuit and Waveforms
4N25 4N26 4N27 4N28
PACKAGE DIMENSIONS
–A–
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEAD WHEN
FORMED PARALLEL.
6
4
3
–B–
1
INCHES
MILLIMETERS
DIM
A
B
C
D
E
MIN
MAX
0.350
0.260
0.200
0.020
0.070
0.014
MIN
8.13
6.10
2.93
0.41
1.02
0.25
MAX
8.89
6.60
5.08
0.50
1.77
0.36
C
F 4 PL
L
0.320
0.240
0.115
0.016
0.040
0.010
N
F
–T–
SEATING
PLANE
K
G
J
K
L
M
N
0.100 BSC
2.54 BSC
0.008
0.100
0.012
0.150
0.21
2.54
0.30
3.81
J 6 PL
G
0.300 BSC
7.62 BSC
M
M
M
0.13 (0.005)
T
B
A
M
0
15
0
15
E 6 PL
0.015
0.100
0.38
2.54
D 6 PL
M
M
M
0.13 (0.005)
T
A
B
STYLE 1:
PIN 1. ANODE
2. CATHODE
3. NC
4. EMITTER
5. COLLECTOR
6. BASE
THRU HOLE
–A–
6
4
3
NOTES:
–B–
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
1
INCHES
MILLIMETERS
DIM
A
B
C
D
E
MIN
MAX
0.350
0.260
0.200
0.020
0.070
0.014
MIN
8.13
6.10
2.93
0.41
1.02
0.25
MAX
8.89
6.60
5.08
0.50
1.77
0.36
L
F 4 PL
0.320
0.240
0.115
0.016
0.040
0.010
H
C
F
–T–
SEATING
PLANE
G
H
J
K
L
0.100 BSC
2.54 BSC
G
J
0.020
0.008
0.006
0.320 BSC
0.332
0.025
0.012
0.035
0.51
0.20
0.16
8.13 BSC
8.43
0.63
0.30
0.88
K 6 PL
0.13 (0.005)
M
E 6 PL
M
M
M
T
B
A
D 6 PL
S
0.390
9.90
M
M
0.13 (0.005)
T
A
B
SURFACE MOUNT
4N25 4N26 4N27 4N28
NOTES:
–A–
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEAD WHEN
FORMED PARALLEL.
6
4
3
–B–
INCHES
MILLIMETERS
1
DIM
A
B
C
D
E
MIN
MAX
0.350
0.260
0.200
0.020
0.070
0.014
MIN
8.13
6.10
2.93
0.41
1.02
0.25
MAX
8.89
6.60
5.08
0.50
1.77
0.36
0.320
0.240
0.115
0.016
0.040
0.010
L
N
F 4 PL
F
C
G
J
K
L
0.100 BSC
2.54 BSC
0.008
0.100
0.400
0.015
0.012
0.150
0.425
0.040
0.21
2.54
0.30
3.81
–T–
SEATING
PLANE
10.16
0.38
10.80
1.02
N
G
J
K
D 6 PL
0.13 (0.005)
E 6 PL
M
M
M
T
A
B
0.4" LEAD SPACING
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, and (c) whose failure to
perform when properly used in accordance with
instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of the
user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
www.fairchildsemi.com
© 2000 Fairchild Semiconductor Corporation
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