2SK3491TP [ETC]

TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 1A I(D) | TO-251VAR ; 晶体管| MOSFET | N沟道| 600V V( BR ) DSS | 1A I( D) | TO- 251VAR\n
2SK3491TP
型号: 2SK3491TP
厂家: ETC    ETC
描述:

TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 1A I(D) | TO-251VAR
晶体管| MOSFET | N沟道| 600V V( BR ) DSS | 1A I( D) | TO- 251VAR\n

晶体 晶体管 开关
文件: 总4页 (文件大小:35K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Ordering number : ENN6959  
N-Channel Silicon MOSFET  
2SK3491  
Ultrahigh-Speed Switching Applications  
Features  
Package Dimensions  
unit : mm  
Low ON-resistance.  
Low Qg.  
2083B  
[2SK3491]  
6.5  
5.0  
4
2.3  
0.5  
0.85  
0.7  
1.2  
0.6  
0.5  
1 : Gate  
1
2
3
2 : Drain  
3 : Source  
4 : Drain  
2.3  
2.3  
SANYO : TP  
Package Dimensions  
unit : mm  
2092B  
[2SK3491]  
6.5  
2.3  
5.0  
4
0.5  
0.5  
0.85  
1
2
3
1 : Gate  
0.6  
1.2  
0 to 0.2  
2 : Drain  
3 : Source  
4 : Drain  
2.3  
2.3  
SANYO : TP-FA  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft's  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Sem iconductor Com pany  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
52101 TS IM TA-3255 No.6959-1/4  
2SK3491  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Drain-to-Source Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
V
V
600  
±30  
1.0  
4.0  
1.0  
20  
DSS  
Gate-to-Source Voltage  
Drain Current (DC)  
V
GSS  
I
D
A
Drain Current (Pulse)  
I
PW10µs, duty cycle1%  
Tc=25°C  
A
DP  
W
W
°C  
°C  
Allowable Power Dissipation  
P
D
Channel Temperature  
Storage Temperature  
Tch  
150  
Tstg  
--55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
600  
max  
Drain-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Sourse Leakage Current  
Cutoff Voltage  
V
I
=1mA, V =0  
V
µA  
nA  
V
(BR)DSS  
D GS  
I
V
V
V
V
V
V
V
V
V
=600V, V =0  
GS  
100  
DSS  
DS  
GS  
DS  
DS  
DS  
DS  
DS  
DS  
DS  
I
=±30V, V =0  
DS  
±100  
GSS  
V
(off)  
GS  
=10V, I =1mA  
2.5  
3.5  
D
Forward Transfer Admittance  
Static Drain-to-Source On-State Resistance  
Input Capacitance  
yfs  
(on)  
=10V, I =0.5A  
430  
850  
mS  
D
R
=10V, I =0.5A  
D
8.5  
135  
40  
20  
6
11  
DS  
Ciss  
Coss  
Crss  
Qg  
=20V, f=1MHz  
=20V, f=1MHz  
=20V, f=1MHz  
pF  
pF  
pF  
nC  
ns  
ns  
ns  
ns  
V
Output Capacitance  
Reverse Transfer Capacitance  
Total Gate Charge  
=200V, V =10V, I =1.0A  
GS  
D
Turn-ON Delay Time  
t (on)  
d
See specified Test Circuit  
See specified Test Circuit  
See specified Test Circuit  
See specified Test Circuit  
8
Rise Time  
t
r
7
Turn-OFF Delay Time  
Fall Time  
t (off)  
d
17  
30  
0.83  
t
f
Diode Forward Voltage  
Marking : K3491  
V
SD  
I =1.0A, V =0  
S GS  
1.2  
Switching Time Test Circuit  
V
=200V  
DD  
V
IN  
I
=0.5A  
L
D
10V  
0V  
R =400  
V
D
OUT  
V
IN  
G
PW=1µs  
D.C.0.5%  
R
GS  
50Ω  
P. G  
2SK3491  
S
I
-- V  
I
-- V  
GS  
D
DS  
D
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
V
=10V  
DS  
°C  
-25  
Tc= -  
C
25°  
5.5V  
5.0V  
75  
°C  
V
=4.5V  
GS  
0.2  
0
0.2  
0
0
5
10  
15  
20  
IT02865  
0
5
10  
15  
20  
IT02866  
Drain-to-Source Voltage, V  
DS  
-- V  
Gate-to-Source Voltage, V -- V  
GS  
No.6959-2/4  
2SK3491  
R
(on) -- V  
R
DS  
(on) -- Tc  
DS  
GS  
25  
20  
15  
10  
20  
18  
16  
14  
12  
10  
8
I =0.5A  
Tc=25°C  
D
0.1A 0.5A  
V =10V  
GS  
I
=1.0A  
D
6
5
0
4
2
0
0
2
4
6
8
10  
12  
14  
16  
18  
20  
125  
150  
--50  
--25  
0
25  
50  
75  
100  
Gate-to-Source Voltage, V  
GS  
-- V  
IT02867  
Case Temperature, Tc -- °C  
IT02868  
V
(off) -- Tc  
yfs -- I  
GS  
D
5
4
3
2
3
2
V =10V  
DS  
V
=10V  
=1mA  
DS  
I
D
1.0  
7
5
3
2
1
0
0.1  
7
0.1  
2
3
5
7
2
3
--50  
0
50  
100  
150  
1.0  
Case Temperature, Tc -- °C  
IT02869  
IT02870  
Drain Current, I -- A  
D
I
-- V  
SW Time -- I  
D
F
SD  
10  
1000  
7
5
V
=200V  
=10V  
V =0  
GS  
DD  
7
5
V
GS  
3
2
3
2
1.0  
7
5
100  
3
2
7
5
0.1  
7
5
3
2
3
2
t (on)  
d
10  
7
5
0.01  
7
5
3
2
3
2
0.001  
1.0  
0.1  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
IT02871  
2
3
5
7
2
3
1.0  
Diode Forward Voltage, V  
SD  
-- V  
Drain Current, I -- A  
D
IT02872  
Ciss, Coss, Crss -- V  
Forward Bias A S O  
DS  
1000  
10  
7
5
f=1MHz  
7
5
I =4A  
DP  
10µs  
3
2
3
2
Ciss  
I =1A  
D
100  
1.0  
7
5
7
5
3
2
3
2
10  
0.1  
7
5
7
5
Operation in this area  
is limited by R (on).  
DS  
3
2
3
2
Tc=25°C  
Single pulse  
1.0  
0.01  
1.0  
2
3
5
7
2
3
5
7
2
3
5 7  
1000  
0
5
10  
15  
20  
25  
30  
35  
IT02873  
10  
100  
Drain-to-Source Voltage, V  
SD  
-- V  
Drain-to-Source Voltage, V  
DS  
-- V  
IT02874  
No.6959-3/4  
2SK3491  
P
-- Ta  
P
-- Tc  
D
D
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
30  
25  
20  
15  
10  
5
0
0.2  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
0
20  
40  
60  
80  
100  
120  
140  
160  
Amibient Temperature, Ta -- °C  
IT02876  
Case Temperature, Tc -- °C  
IT02875  
Specifications of any and all SANYO products described or contained herein stipulate the performance,  
characteristics, and functions of the described products in the independent state, and are not guarantees  
of the performance, characteristics, and functions of the described products as mounted in the customer's  
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,  
the customer should always evaluate and test devices mounted in the customer's products or equipment.  
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all  
semiconductor products fail with some probability. It is possible that these probabilistic failures could  
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,  
or that could cause damage to other property. When designing equipment, adopt safety measures so  
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective  
circuits and error prevention circuits for safe design, redundant design, and structural design.  
In the event that any or all SANYO products(including technical data,services) described or  
contained herein are controlled under any of applicable local export control laws and regulations,  
such products must not be exported without obtaining the export license from the authorities  
concerned in accordance with the above law.  
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or  
mechanical, including photocopying and recording, or any information storage or retrieval system,  
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.  
Any and all information described or contained herein are subject to change without notice due to  
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"  
for the SANYO product that you intend to use.  
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not  
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but  
no guarantees are made or implied regarding its use or any infringements of intellectual property rights  
or other rights of third parties.  
This catalog provides information as of May, 2001. Specifications and information herein are subject  
to change without notice.  
PS No.6959-4/4  

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