2SK3033(TENTATIVE) [ETC]

2SK3033 (Tentative) - Silicon N-Channel Power F-MOS FET ; 2SK3033 （暂定） - 硅N沟道功率的F- MOS FET\n


型号：	2SK3033(TENTATIVE)
厂家：	ETC
描述：	2SK3033 (Tentative) - Silicon N-Channel Power F-MOS FET 2SK3033 （暂定） - 硅N沟道功率的F- MOS FET\n
文件：	总2页 (文件大小：37K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Power F-MOS FETs

2SK3033 (Tentative)

Silicon N-Channel Power F-MOS FET

■ Features

● Avalanche energy capacity guaranteed

● High-speed switching

● Low ON-resistance

unit: mm

● No secondary breakdown

● Low-voltage drive

● High electrostatic breakdown voltage

4.6±0.2

9.9±0.3

2.9±0.2

φ3.2±0.1

■ Applications

● Contactless relay

● Diving circuit for a solenoid

● Driving circuit for a motor

● Control equipment

2.6±0.1

1.2±0.15

0.7±0.1

1.45±0.15

● Switching power supply

0.75±0.1

■ Absolute Maximum Ratings (T_C= 25°C)

2.54±0.2

5.08±0.4

Parameter

Symbol

Ratings

Unit

Drain to Source breakdown voltage V_DSS

100

2 3

Gate to Source voltage

Pulse

Avalanche energy capacity

V_GSS

I_D

±20

1: Gate

2: Drain

3: Source

±40

Drain current

I_DP

±80

TO-220E Package

EAS^*

Internal Connection

Allowable power

dissipation

T_C= 25°C

Ta = 25°C

P_D

Channel temperature

Storage temperature

T_ch

150

°C

T_stg

−55 to +150

L = 0.1mH, I_L= 40A, 1 pulse

■ Electrical Characteristics (T_C= 25°C)

Parameter

Symbol

Conditions

min

typ

max

Unit

µA

Drain to Source cut-off current

Gate to Source leakage current

I_DSS

V_DS= 80V, V_GS= 0

V_GS= ±20V, V_DS= 0

_D= 1mA, V_GS= 0

V_DS= 10V, I_D= 1mA

R_DS(on)1V_GS= 10V, I_D= 20A

I_GSS

±10

Drain to Source breakdown voltage V_DSS

100

Gate threshold voltage

V_th

2.5

mΩ

Drain to Source ON-resistance

R_DS(on)2

| Y_fs|

V_GS= 4V, I_D= 20A

Forward transfer admittance

Diode forward voltage

V_DS= 10V, I_D= 20A

I_DR= 20A, V_GS= 0

V_DSF

−1.4

Input capacitance (Common Source) C_iss

Output capacitance (Common Source) C_oss

Reverse transfer capacitance (Common Source) C_rss

2400

530

220

V_DS= 10V, V_GS= 0, f = 1MHz

Turn-on time (delay time)

Rise time

t_d(on)

t_r

V_DD= 30V, I_D= 20A

Fall time

t_f

V_GS= 10V, R_L= 1.5Ω

120

600

Turn-off time (delay time)

Thermal resistance between channel and case

Thermal resistance between channel and atmosphere

t_d(off)

R_th(ch-c)

R_th(ch-a)

2.08

62.5

°C/W

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2001 MAR

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