2SK2760-01R [ETC]
STD MOSFET ; STD MOSFET\n
| 型号： | 2SK2760-01R |
| 厂家： | 
ETC |
| 描述： | STD MOSFET
|
| 文件： | 总2页 (文件大小：302K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
N-channel MOS-FET
FAP-IIS Series
600V 1,2W
9A
60W
> Features
> Outline Drawing
- High Speed Switching
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- High Voltage
- VGS = ± 30V Guarantee
- Repetitive Avalanche Rated
> Applications
- Switching Regulators
- UPS
- DC-DC converters
- General Purpose Power Amplifier
> Maximum Ratings and Characteristics
> Equivalent Circuit
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item
Symbol
Rating
Unit
V
Drain-Source-Voltage
V
600
DS
Continous Drain Current
Pulsed Drain Current
I
9
A
D
I
32
A
D(puls)
Gate-Source-Voltage
V
±30
V
GS
I
9
117,6
A
Repetitive or Non-Repetitive (Tch £ 150°C)
Avalanche Energy
AR
E
mJ
W
°C
°C
AS
Max. Power Dissipation
Operating and Storage Temperature Range
P
60
D
T
150
ch
T
-55 ~ +150
stg
Electrical Characteristics (TC=25°C), unless otherwise specified
-
Item
Symbol
Test conditions
Min.
600
Typ.
4,0
Max.
Unit
V
ID=1mA
ID=1mA
VDS=600V
VGS=0V
VGS=±30V
ID=4A
VGS=0V
Drain-Source Breakdown-Voltage
Gate Threshhold Voltage
Zero Gate Voltage Drain Current
V
(BR)DSS
VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
V
3,5
4,5
500
1,0
V
GS(th)
I
10
0,2
10
µA
mA
nA
W
DSS
Gate Source Leakage Current
Drain Source On-State Resistance
Forward Transconductance
Input Capacitance
I
100
1,2
GSS
VGS=10V
VDS=25V
R
1,0
5
DS(on)
ID=4A
g
2,5
S
fs
VDS=25V
C
900
150
70
1400
230
110
40
pF
pF
pF
ns
ns
ns
ns
A
iss
VGS=0V
f=1MHz
VCC=300V
ID=9A
Output Capacitance
C
oss
Reverse Transfer Capacitance
Turn-On-Time ton (ton=td(on)+tr)
C
rss
t
25
d(on)
t
70
110
90
r
Turn-Off-Time toff (ton=td(off)+tf)
VGS=10V
RGS=10 W
t
60
d(off)
t
35
60
f
Tch=25°C
Avalanche Capability
I
L = 100µH
9
AV
IF=2xIDR VGS=0V Tch=25°C
IF=IDR VGS=0V
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
1,0
550
7,0
1,50
V
SD
t
ns
µC
rr
-dIF/dt=100A/µs Tch=25°C
Q
rr
-
Thermal Characteristics
Item
Symbol
Test conditions
channel to air
Min.
Typ.
Max.
30
Unit
°C/W
°C/W
Thermal Resistance
R
th(ch-a)
R
channel to case
2,08
th(ch-c)
FUJI ELECTRIC GmbH; Lyoner Straße 26; D-60528 Frankfurt; Tel: 069-66 90 29-0; Fax: 069-66 90 29-56
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com
N-channel MOS-FET
2SK2760-01
600V
1,2W
9A
60W
FAP-IIS Series
> Characteristics
Typical Output Characteristics
Drain-Source On-State Resistance vs. Tch
Typical Transfer Characteristics
ID=f(VDS); 80µs pulse test; TC=25°C
RDS(on) = f(Tch); ID=4A; VGS=10V
ID=f(VGS); 80µs pulse test; VDS=25V; Tch=25°C
•
•
•
VDS [V] ®
Tch [°C] ®
VGS [V] ®
Typical Drain-Source On-State-Resistance vs. ID
Typical Forward Transconductance vs. ID
Gate Threshold Voltage vs. Tch
RDS(on)=f(ID); 80µs pulse test; TC=25°C
gfs=f(ID); 80µs pulse test; VDS=25V; Tch=25°C
VGS(th)=f(Tch); ID=1mA; VDS=VGS
•
•
•
ID [A] ®
ID [A] ®
Tch [°C] ®
Typical Capacitances vs. VDS
Typical Gate Charge Characteristic
Forward Characteristics of Reverse Diode
C=f(VDS); VGS=0V; f=1MHz
VGS=f(Qg); ID=9A; Tc=25°C
IF=f(VSD); 80µs pulse test; VGS=0V
•
•
•
•
VDS [V] ®
Qg [nC] ®
VSD [V] ®
Avalanche Energy Derating
Eas=f(starting Tch); VCC=60V; IAV=9A
Safe Operation Area
ID=f(VDS): D=0,01, Tc=25°C
•
Transient Thermal impedance
Zthch=f(t) parameter:D=t/T
•
•
Starting Tch [°C]
®
VDS [V] ®
t [s] ®
This specification is subject to change without notice!
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