2SK2122 [ETC]
;
| 型号： | 2SK2122 |
| 厂家： | 
ETC |
| 描述： |
|
| 文件： | 总2页 (文件大小：39K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Power F-MOS FETs
2SK2122
Silicon N-Channel Power F-MOS FET
■ Features
● Avalanche energy capacity guaranteed: EAS > 3.2mJ
● High-speed switching: tf = 50ns
● No secondary breakdown
unit: mm
4.6±0.2
9.9±0.3
2.9±0.2
φ3.2±0.1
■ Applications
● Contactless relay
● Diving circuit for a solenoid
● Driving circuit for a motor
● Control equipment
2.6±0.1
1.2±0.15
0.7±0.1
1.45±0.15
● Switching power supply
0.75±0.1
■ Absolute Maximum Ratings (TC = 25°C)
2.54±0.2
5.08±0.4
Parameter
Symbol
Ratings
Unit
V
Drain to Source breakdown voltage VDSS
250
1
2 3
7
Gate to Source voltage
DC
Pulse
Avalanche energy capacity
VGSS
ID
±20
V
1: Gate
2: Drain
3: Source
±8
A
Drain current
TO-220E Package
IDP
±16
A
EAS*
3.2
mJ
Allowable power
dissipation
TC = 25°C
Ta = 25°C
40
PD
W
2
Channel temperature
Storage temperature
Tch
150
°C
°C
Tstg
−55 to +150
*
L = 0.1mH, IL = 8A, VDD = 50V, 1 pulse
■ Electrical Characteristics (TC = 25°C)
Parameter
Symbol
IDSS
Conditions
VDS = 200V, VGS = 0
VGS = ±20V, VDS = 0
ID = 1mA, VGS = 0
min
typ
max
Unit
mA
µA
V
Drain to Source cut-off current
Gate to Source leakage current
0.1
±1
IGSS
Drain to Source breakdown voltage VDSS
250
2
Gate threshold voltage
Vth
VDS = 10V, ID = 1mA
5
V
Drain to Source ON-resistance
Forward transfer admittance
Diode forward voltage
RDS(on)
| Yfs |
VDSF
VGS = 10V, ID = 5A
VDS = 10V, ID = 5A
0.4
4.7
0.6
Ω
2.7
S
IDR = 8A, VGS = 0
−1.7
V
Input capacitance (Common Source) Ciss
Output capacitance (Common Source) Coss
Reverse transfer capacitance (Common Source) Crss
1100
200
60
pF
pF
pF
ns
VDS = 10V, VGS = 0, f = 1MHz
Turn-on time (delay time)
Rise time
td(on)
tr
20
VGS = 10V, ID = 5A
20
ns
Fall time
tf
VDD = 100V, RL = 20Ω
30
ns
Turn-off time (delay time)
Thermal resistance between channel and case
td(off)
Rth(ch-c)
130
ns
3.125
°C/W
1
Power F-MOS FETs
2SK2122
Area of safe operation (ASO)
PD
Ta
ID
VDS
100
50
40
30
20
10
0
16
14
12
10
8
Non repetitive pulse
TC=25˚C
(1) TC=Ta
(2) Without heat sink
(PD=2W)
TC=25˚C
30
VGS=15V
IDP
10V
ID
10
t=100µs
3
1
(1)
7.5V
7V
1ms
10ms
100ms
6
0.3
0.1
DC
6.5V
4
6V
40W
2
0.03
0.01
5.5V
5V
(2)
20 40 60 80 100 120 140 160
0
1
3
10
30
100 300 1000
0
0
0
0
5
10
15
20
( )
(
)
(
)
Drain to source voltage VDS
V
Ambient temperature Ta ˚C
Drain to source voltage VDS
V
ID
VGS
VGS
TC
Vth
TC
10
8
6.6
6.4
6.2
6.0
5.8
5.6
5.4
5.2
5.0
6
5
4
3
2
1
0
TC=0˚C
VDS=10V
ID=3A
125˚C
150˚C
VDS=10V
VDS=25V
ID=1mA
25˚C
75˚C
6
4
2
0
0
2
4
6
8
10
12
25
50
75
100 125 150
0
25
50
75
100 125 150
( )
V
(
)
(
)
Gate to source voltage VGS
Case temperature TC ˚C
Case temperature TC ˚C
RDS(on)
ID
| Yfs | ID
Ciss, Coss, Crss
VDS
10000
0.6
0.5
0.4
0.3
0.2
0.1
0
8
7
6
5
4
3
2
1
0
VDS=10V
TC=25˚C
f=1MHz
TC=25˚C
TC=25˚C
3000
1000
Ciss
VGS=10V
15V
300
100
Coss
Crss
30
10
3
1
0
40
80
120
160
200
0
2
4
6
8
10
2
4
6
8
10 12 14 16
( )
V
( )
A
( )
A
Drain to source voltage VDS
Drain current ID
Drain current ID
2
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