2SD1937R [ETC]
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 500MA I(C) | TO-92 ; 晶体管| BJT | NPN | 120V V（ BR ） CEO | 500MA I（C ） | TO- 92\n
| 型号： | 2SD1937R |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 500MA I(C) | TO-92
|
| 文件： | 总3页 (文件大小：51K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transistor
2SD1937
Silicon NPN epitaxial planer type
For low-frequency amplification
Complementary to 2SB1297
Unit: mm
5.0±0.2
4.0±0.2
Features
High collector to emitter voltage VCEO
■
●
.
●
Optimum for the driver-stage of a low-frequency and 40 to 60W
output amplifier.
●
Allowing supply with the radial taping.
0.7±0.1
Absolute Maximum Ratings (Ta=25˚C)
■
0.45+–00..115
1.27
0.45+–00..115
Parameter
Symbol
VCBO
VCEO
VEBO
ICP
Ratings
Unit
V
1.27
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
120
120
V
1:Emitter
2:Collector
3:Base
TO–92NL Package
5
V
1
2 3
2.54±0.15
1
A
IC
0.5
1
A
Collector power dissipation
Junction temperature
Storage temperature
PC
W
˚C
˚C
Tj
150
Tstg
–55 ~ +150
Electrical Characteristics (Ta=25˚C)
■
Parameter
Symbol
VCEO
Conditions
min
120
5
typ
max
Unit
V
Collector to emitter voltage
Emitter to base voltage
IC = 0.1mA, IB = 0
VEBO
IE = 10µA, IC = 0
V
*
hFE1
VCE = 10V, IC = 150mA
VCE = 5V, IC = 500mA
130
50
330
Forward current transfer ratio
hFE2
Collector to emitter saturation voltage VCE(sat)
Base to emitter saturation voltage VBE(sat)
IC = 300mA, IB = 30mA
IC = 300mA, IB = 30mA
VCB = 10V, IE = –50mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
1
V
V
1.2
Transition frequency
fT
200
MHz
pF
Collector output capacitance
Cob
20
*hFE1 Rank classification
Rank
hFE1
R
S
130 ~ 220
185 ~ 330
1
Transistor
2SD1937
PC — Ta
IC — VCE
VCE(sat) — IC
1.2
1.0
0.8
0.6
0.4
0.2
0
200
160
120
80
100
IC/IB=10
Ta=25˚C
30
10
IB=1.0mA
0.9mA
3
1
0.8mA
0.7mA
0.6mA
Ta=75˚C
–25˚C
0.5mA
0.4mA
0.3mA
0.3
0.1
25˚C
40
0.2mA
0.1mA
0.03
0.01
0
0
20 40 60 80 100 120 140 160
0
2
4
6
8
10
12
0.01 0.03
0.1
0.3
1
3
10
(
)
( )
V
( )
A
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
Collector current IC
VBE(sat) — IC
hFE — IC
fT — IE
100
600
400
350
300
250
200
150
100
50
IC/IB=10
VCB=10V
Ta=25˚C
IC/IB=10
30
10
500
400
300
200
100
0
3
1
25˚C
75˚C
Ta=–25˚C
Ta=75˚C
25˚C
0.3
0.1
–25˚C
0.03
0.01
0
–1
0.01 0.03
0.1
0.3
1
3
10
0.01 0.03
0.1
0.3
1
3
10
–3
–10
–30
–100
( )
A
( )
A
(
)
Collector current IC
Collector current IC
Emitter current IE mA
Cob — VCB
Area of safe operation (ASO)
80
70
60
50
40
30
20
10
0
10
Single pulse
Ta=25˚C
IE=0
f=1MHz
Ta=25˚C
3
1
ICP
t=10ms
IC
t=1s
0.3
0.1
0.03
0.01
0.003
0.001
1
3
10
30
100
1
3
10
30
100 300 1000
( )
V
( )
V
Collector to base voltage VCB
Collector to emitter voltage VCE
2
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2001 MAR
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