2SD1824S [ETC]
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 20MA I(C) | TO-236VAR ; 晶体管| BJT | NPN | 100V V（ BR ） CEO | 20MA I（C ） | TO- 236VAR\n
| 型号： | 2SD1824S |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 20MA I(C) | TO-236VAR
|
| 文件： | 总3页 (文件大小：51K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transistor
2SD1824
Silicon NPN epitaxial planer type
For low-frequency amplification
Unit: mm
2.1±0.1
0.425
1.25±0.1
0.425
Features
High foward current transfer ratio hFE
■
●
.
1
●
●
●
Low collector to emitter saturation voltage VCE(sat)
.
High emitter to base voltage VEBO
.
3
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
2
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Symbol
VCBO
VCEO
VEBO
ICP
Ratings
Unit
V
0.2±0.1
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
100
100
V
1:Base
15
V
2:Emitter
3:Collector
EIAJ:SC–70
S–Mini Type Package
50
mA
mA
mW
˚C
IC
20
Marking symbol : 1V
Collector power dissipation
Junction temperature
Storage temperature
PC
150
Tj
150
Tstg
–55 ~ +150
˚C
Electrical Characteristics (Ta=25˚C)
■
Parameter
Symbol
ICBO
Conditions
min
typ
max
100
1
Unit
nA
µA
V
VCB = 60V, IE = 0
Collector cutoff current
ICEO
VCE = 60V, IB = 0
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
VCBO
VCEO
VEBO
IC = 10µA, IE = 0
100
100
15
IC = 1mA, IB = 0
V
IE = 10µA, IC = 0
V
*
Forward current transfer ratio
hFE
VCE = 10V, IC = 2mA
IC = 10mA, IB = 1mA
VCB = 10V, IE = –2mA, f = 200MHz
400
1200
0.2
Collector to emitter saturation voltage VCE(sat)
0.05
90
V
Transition frequency
fT
MHz
*hFE Rank classification
Rank
hFE
R
S
400 ~ 800 600 ~ 1200
1VR 1VS
Marking Symbol
1
Transistor
2SD1824
PC — Ta
IC — VCE
IC — VBE
240
200
160
120
80
80
70
60
50
40
30
20
10
0
60
50
40
30
20
10
0
VCE=10V
Ta=25˚C
25˚C
Ta=75˚C
–25˚C
IB=100µA
80µA
60µA
50µA
40µA
30µA
20µA
10µA
40
0
0
20 40 60 80 100 120 140 160
0
2
4
6
8
10
12
0
0.4
0.8
1.2
1.6
2.0
(
)
( )
V
( )
Base to emitter voltage VBE V
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
VCE(sat) — IC
hFE — IC
fT — IE
100
1800
200
160
120
80
VCB=10V
Ta=25˚C
IC/IB=10
VCE=10V
30
10
1500
1200
900
600
300
0
Ta=75˚C
25˚C
3
1
–25˚C
0.3
0.1
Ta=75˚C
25˚C
40
–25˚C
0.03
0.01
0
0.1
0.3
1
3
10
30
100
0.1
0.3
1
3
10
30
100
– 0.1 – 0.3
–1
–3
–10 –30 –100
(
)
(
)
(
)
Collector current IC mA
Collector current IC mA
Emitter current IE mA
Cob — VCB
NV — IC
NV — VCE
6
100
80
60
40
20
0
100
80
60
40
20
0
VCE=10V
GV=80dB
Function=FLAT
Ta=25˚C
IE=0
f=1MHz
Ta=25˚C
Rg=100kΩ
5
4
3
2
1
0
Rg=100kΩ
22kΩ
22kΩ
5kΩ
5kΩ
IC=1mA
GV=80dB
Function=FLAT
Ta=25˚C
1
3
10
30
100
0.01
003
0.1
0.3
1
1
3
10
30
100
(
V
)
(
)
( )
Collector to emitter voltage VCE V
Collector to base voltage VCB
Collector current IC mA
2
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2001 MAR
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