2SD1616AK [ETC]

TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 1A I(C) | TO-92 ; 晶体管| BJT | NPN | 60V V（ BR ） CEO | 1A I（C ） | TO- 92


型号：	2SD1616AK
厂家：	ETC
描述：	TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 1A I(C) \| TO-92 晶体管\| BJT \| NPN \| 60V V（ BR ） CEO \| 1A I（C ） \| TO- 92 晶体晶体管
文件：	总3页 (文件大小：119K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Ordering number:1784B

PNP/NPN Epitaxial Planar Silicon Transistors

2SB1118/2SD1618

Low-Voltage High-Current Amplifier,

Muting Applications

Features

Package Dimensions

unit:mm

· Low collector-to-emitter saturation voltage.

· Very small size making it easy to provide high-

density, small-sized hybrid IC’s.

2038

[2SB1118/2SD1618]

E : Emitter

C : Collector

B : Base

( ) : 2SB1118

SANYO : PCP

(Bottom view)

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Parameter

Collector-to-Base Voltage

Symbol

Conditions

Ratings

Unit

(–)20

(–)15

(–)5

CBO

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

CEO

EBO

(–)0.7

(–)1.5

500

Collector Current (Pulse)

Collector Dissipation

˚C

Mounted on ceramic board (250mm²×0.8mm)

1.3

Junction Temperature

Storage Temperature

150

Tstg

–55 to +150

Electrical Characteristics at Ta = 25˚C

Ratings

typ

Parameter

Symbol

Conditions

Unit

min

max

Collector Cutoff Current

=(–)15V, I =0

(–)0.1

560*

µA

CBO

Emitter Cutoff Current

DC Current Gain

=(–)4V, I =0

EBO

=(–)2V, I =(–)50mA

=(–)2V, I =(–)500mA

=(–)10V, I =(–)50mA

140*

Gain-Bandwidth Product

250

MHz

* ; The 2SB1118/2SD1618 are classified by 50mA h as follows :

Marking 2SB1118 : BA

2SD1618 : DA

rank : S, T, U

140

280

200

400

280

560

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

92098HA (KT)/4017KI/0216AT/2065MY, TS No.1784–1/3

2SB1118/2SD1618

Ratings

typ

Parameter

Symbol

Conditions

Unit

min

max

Collector-to-Emitter Saturation Voltage

=(–)5mA, I =(–)0.5mA

CE(sat)

(–15)

(–35)

=(–)100mA, I =(–)10mA

CE(sat)

(–60) (–120)

Base-to-Emitter Saturation Voltage

Collector-to-Base Breakdown Voltage

Collector-to-Emitter Breakdown Voltage

Emitter-to-Base Breakdown Voltage

Output Capacitance

=(–)100mA, I =(–)10mA

(–)0.8

(–)1.2

BE(sat)

=(–)10µA, I =0

(–)20

(–)15

(–)5

(BR)CBO

(BR)CEO

(BR)EBO

=(–)1mA, R =∞

=(–)10µA, I =0

=(–)10V, f=1MHz

(13)

No.1784–2/3

2SB1118/2SD1618

Specifications of any and all SANYO products described or contained herein stipulate the performance,

characteristics, and functions of the described products in the independent state, and are not guarantees

of the performance, characteristics, and functions of the described products as mounted in the customer’s

products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,

the customer should always evaluate and test devices mounted in the customer’s products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all

semiconductor products fail with some probability. It is possible that these probabilistic failures could

give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,

or that could cause damage to other property. When designing equipment, adopt safety measures so

that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective

circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any and all SANYO products described or contained herein fall under strategic

products (including services) controlled under the Foreign Exchange and Foreign Trade Control Law of

Japan, such products must not be exported without obtaining export license from the Ministry of

International Trade and Industry in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or

mechanical, including photocopying and recording, or any information storage or retrieval system,

or otherwise, without the prior written permission of SANYO Electric Co., Ltd.

Any and all information described or contained herein are subject to change without notice due to

product/technology improvement, etc. When designing equipment, refer to the “Delivery Specification”

for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not

guaranteed for volume production. SANYO believes information herein is accurate and reliable, but

no guarantees are made or implied regarding its use or any infringements of intellectual property rights

or other rights of third parties.

This catalog provides information as of September, 1998. Specifications and information herein are

subject to change without notice.

PS No.1784–3/3

2SD1616AK [ETC]

相关型号：

2SD1616AK-G

2SD1616AK-T

2SD1616AL

2SD1616AL-G

2SD1616AL-G-AB3-B

2SD1616AL-G-AB3-K

2SD1616AL-G-AB3-R

2SD1616AL-G-AB3-T

2SD1616AL-G-G03-B

2SD1616AL-G-G03-K

2SD1616AL-G-G03-R

2SD1616AL-G-G03-T