2SD1511Q [ETC]
BJT ; BJT\n
ETC 
Transistor
2SD1511
Silicon NPN epitaxial planer type darlington
Unit: mm
For low-frequency output amplification
1.5±0.1
4.5±0.1
1.6±0.2
Features
■
●
Forward current transfer ratio hFE is designed high, which is ap-
propriate to the driver circuit of motors and printer bammer: hFE
= 4000 to 2000.
45°
●
A shunt resistor is omitted from the driver.
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
0.4±0.08
0.4±0.04
●
0.5±0.08
1.5±0.1
3.0±0.15
3
2
1
Absolute Maximum Ratings (Ta=25˚C)
■
marking
Parameter
Symbol
VCBO
VCEO
VEBO
ICP
Ratings
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
100
80
V
1:Base
2:Collector
3:Emitter
EIAJ:SC–62
Mini Power Type Package
5
V
1.5
A
Marking symbol : P
Internal Connection
IC
1
A
*
Collector power dissipation
Junction temperature
Storage temperature
PC
1
W
˚C
˚C
Tj
150
C
E
Tstg
–55 ~ +150
*
Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
B
Electrical Characteristics (Ta=25˚C)
■
Parameter
Symbol
ICBO
Conditions
VCB = 25V, IE = 0
min
typ
max
100
100
Unit
nA
nA
V
Collector cutoff current
Emitter cutoff current
IEBO
VEB = 4V, IC = 0
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
VCBO
VCEO
VEBO
IC = 100µA, IE = 0
100
80
IC = 1mA, IB = 0
V
IE = 100µA, IC = 0
5
V
hFE
VCE = 10V, IC = 1A*2
IC = 1.0A, IB = 1.0mA*2
IC = 1.0A, IB = 1.0mA*2
VCB = 10V, IE = –50mA, f = 200MHz
4000
40000
1.8
*1
Collector to emitter saturation voltage VCE(sat)
Base to emitter saturation voltage VBE(sat)
V
V
2.2
Transition frequency
fT
150
MHz
*2 Pulse measurement
*1
h
Rank classification
FE
Rank
hFE
Q
R
S
4000 ~ 10000 8000 ~ 20000 16000 ~ 40000
PQ PR PS
Marking Symbol
1
Transistor
2SD1511
PC — Ta
IC — VCE
VCE(sat) — IC
1.2
2.4
2.0
1.6
1.2
0.8
0.4
0
100
IC/IB=1000
Ta=25˚C
Printed circut board: Copper
foil area of 1cm2 or more, and
the board thickness of 1.7mm
for the collector portion.
30
10
1.0
0.8
0.6
0.4
0.2
0
180µA
160µA
3
1
IB=200µA
140µA
25˚C
120µA
Ta=–25˚C
75˚C
100µA
0.3
0.1
80µA
60µA
40µA
0.03
0.01
0
40
80
120
160
200
)
0
2
4
6
8
10
0.01 0.03
0.1
0.3
1
3
10
(
( )
V
( )
Collector current IC A
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
VBE(sat) — IC
hFE — IC
Cob — VCB
100
105
30
25
20
15
10
5
IC/IB=1000
VCE=10V
Ta=75˚C
IE=0
f=1MHz
Ta=25˚C
30
10
25˚C
104
103
102
10
25˚C
3
1
–25˚C
Ta=–25˚C
75˚C
0.3
0.1
0.03
0.01
0
0.01 0.03
0.1
0.3
1
3
10
0.01 0.03
0.1
0.3
1
3
10
1
3
10
30
100
(
A
)
( )
A
( )
Collector to base voltage VCB V
Collector current IC
Collector current IC
2
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Consult our sales staff in advance for information on the following applications:
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2001 MAR
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