2SD1423/2SD1423A [ETC]
2SD1423. 2SD1423A - NPN Transistor ; 2SD1423 。 2SD1423A - NPN晶体管\n
| 型号： | 2SD1423/2SD1423A |
| 厂家： | 
ETC |
| 描述： | 2SD1423. 2SD1423A - NPN Transistor
|
| 文件： | 总3页 (文件大小：50K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transistor
2SD1423, 2SD1423A
Silicon NPN epitaxial planer type
For low-frequency amplification
Unit: mm
Complementary to 2SB1030 and 2SB1030A
4.0±0.2
Features
Optimum for high-density mounting.
■
●
●
Allowing supply with the radial taping.
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Symbol
Ratings
Unit
marking
Collector to
2SD1423
2SD1423A
2SD1423
30
VCBO
V
1
2
3
base voltage
Collector to
60
25
VCEO
V
1.27 1.27
emitter voltage 2SD1423A
Emitter to base voltage
Peak collector current
Collector current
50
2.54±0.15
VEBO
ICP
IC
7
V
A
1
0.5
1:Emitter
2:Collector
3:Base
A
EIAJ:SC–72
New S Type Package
Collector power dissipation
Junction temperature
Storage temperature
PC
300
mW
˚C
˚C
Tj
150
Tstg
–55 ~ +150
Electrical Characteristics (Ta=25˚C)
■
Parameter
Symbol
ICBO
Conditions
min
typ
max
0.1
1
Unit
µA
VCB = 20V, IE = 0
Collector cutoff current
ICEO
VCE = 20V, IB = 0
µA
Collector to base
voltage
2SD1423
2SD1423A
30
60
25
50
7
VCBO
IC = 10µA, IE = 0
V
Collector to emitter 2SD1423
VCEO
VEBO
IC = 2mA, IB = 0
V
V
voltage
2SD1423A
Emitter to base voltage
IE = 10µA, IC = 0
*1
hFE1
hFE2
VCE = 10V, IC = 150mA*2
VCE = 10V, IC = 500mA*2
IC = 300mA, IB = 30mA*2
85
40
340
0.6
15
Forward current transfer ratio
Collector to emitter saturation voltage VCE(sat)
V
MHz
pF
Transition frequency
fT
VCB = 10V, IE = –50mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
200
6
Collector output capacitance
Cob
*2 Pulse measurement
*1
h
Rank classification
FE1
Rank
hFE1
Q
R
S
85 ~ 170
120 ~ 240
170 ~ 340
1
Transistor
2SD1423, 2SD1423A
PC — Ta
IC — VCE
VCE(sat) — IC
500
400
300
200
100
0
1200
1000
800
600
400
200
0
100
IC/IB=10
Ta=25˚C
IB=10mA
30
10
3
1
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
Ta=75˚C
25˚C
0.3
0.1
–25˚C
0.03
0.01
1mA
0
20 40 60 80 100 120 140 160
0
2
4
6
8
10
12
0.01 0.03
0.1
0.3
1
3
10
(
)
(
V
)
( )
Collector current IC A
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
VBE(sat) — IC
hFE — IC
fT — IE
100
300
160
140
120
100
80
IC/IB=10
VCB=10V
Ta=25˚C
VCE=10V
30
10
250
200
150
100
50
Ta=75˚C
25˚C
3
1
25˚C
75˚C
–25˚C
Ta=–25˚C
60
0.3
0.1
40
20
0.03
0.01
0
0
0.01 0.03
0.1
0.3
1
3
10
0.01 0.03
0.1
0.3
1
3
10
– 0.1 – 0.3
–1
–3
–10 –30 –100
(
A
)
(
A
)
(
)
Collector current IC
Collector current IC
Emitter current IE mA
Cob — VCB
10
8
IE=0
f=1MHz
Ta=25˚C
6
4
2
0
1
3
10
30
100
(
V
)
Collector to base voltage VCB
2
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2001 MAR
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